SPP80P06PHXKSA1 vs IPB35N10S3L26ATMA1 Vergleich

Detaillierter Direktvergleich von SPP80P06PHXKSA1 von Infineon und IPB35N10S3L26ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter SPP80P06PHXKSA1 IPB35N10S3L26ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,95 $1,15
Polarity P-Channel —
Drain-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) at TC=25C -80 A —
Maximum Power Dissipation (PD) at TC=25C 340 W —
Gehäuse PG-TO220-3-1 (TO-220-3, through-hole) —
Montageart Through Hole Surface Mount
Betriebs-Sperrschichttemperatur -55 C to +175 C —
Technology OptiMOS P-channel trench MOSFET —
Anzahl der Pins 3 —
Gate Threshold VGS(th) type [DATA_NEEDED: VGS(th) typical value] —
On-State Resistance RDS(on) [DATA_NEEDED: RDS(on) max in mOhm] —
Total Gate Charge Qg [DATA_NEEDED: Qg in nC] —
Avalanche Energy Rated [DATA_NEEDED: EAS rating] —
RoHS-Status Compliant [DATA_NEEDED: RoHS status]
Standard Package Quantity (Tube) 50 —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-T
Channel Type — N-Channel
Maximum Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC — 35 A
Power Dissipation (PD) at TC — 71 W
Package Type — PG-TO263-3 (D2PAK-2)
Pin-Anzahl — 3 (Gate, Drain, Source)
Channel Mode — Enhancement
RDS(on) (typical per Infineon product page) — 26.3 mΩ
Typical Gate Charge Qg @ Vgs — 80 nC
Maximum Drain-Source Resistance Rds — 1.7 mΩ (per RS Components listing)
Minimum Operating Temperature — -55 C
Maximum Power Dissipation Pd — 81 W (per RS Components listing)
AEC-Q101 Qualification — [DATA_NEEDED: AEC-Q101 qualification status]

Datenblätter & Ressourcen

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