STW45NM60-H - 600V 45A MDmesh N-Channel Power MOSFET | STMicroelectronics
Teilenummer: STW45NM60-H ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $6.2 | $6,20 |
| 10 | $5.55 | $55,50 |
| 100 | $4.92 | $492,00 |
| 500 | $4.3 | $2.150,00 |
| 1.000 | $3.78 | $3.780,00 |
STW45NM60-H Übersicht
Key specifications include a 600 V drain-source breakdown voltage (650 V at TJMAX), 45 A continuous drain current at 25 °C case, and 417 W total power dissipation. The device offers a typical on-resistance of 0.09 Ω at VGS = 10 V, gate threshold of 4 V, and 100% avalanche-tested ruggedness. The TO-247-3 through-hole package delivers superior thermal dissipation for high-current switching topologies.
What is a MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for power conversion. Within the MOSFET family, power MOSFETs are classified into categories such as planar MOSFETs, trench MOSFETs, and super-junction (charge-balance) MOSFETs. The MDmesh family - where this STW45NM60-H belongs - is a super-junction N-channel MOSFET optimized for high-voltage (>500 V) switching applications. The STW45NM60-H is a discrete power transistor used in power management and conversion circuits.
Architecture-wise, the MDmesh cell combines a multi-drain vertical structure with horizontal PowerMESH metallization, producing a higher power density than competing planar MOSFETs while lowering conduction losses. The strip-layout technique minimizes dynamic drain-source capacitance, reducing switching losses in hard-switched converters such as PFC stages and half-bridge converters.
Typical applications include switched-mode power supplies (SMPS) with PFC, high-voltage DC-DC converters, industrial motor drives, uninterruptible power supplies (UPS), welding equipment, and induction-heating inverter stages operating from rectified 230 V or 400 V mains.
When designing with this device, ensure adequate heat-sinking - the 417 W dissipation rating is only attainable with a substantial thermal interface. For high-frequency hard-switching topologies, gate-drive resistors in the 10-47 Ω range limit ringing, while a small RC snubber across the drain-source terminals mitigates voltage spikes caused by transformer leakage inductance.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that are not available in the manufacturer datasheet alone, giving design engineers a complete parametric view for sourcing decisions.
Drop-in-Alternativen für STW45NM60-H – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit STW45NM60-H (gleiche Bauform und Footprint) – abweichend in Operating Temperature Range, Technology, Package, Configuration, dv/dt Capability.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
STW45NM60
✅ Drop-In✓ Auf Lager
$4.78 / Stück
Datenblatt ansehen →STW30NM60N
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
STW38NM60N
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STW42NM60N
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
SPW47N60C3
✅ Drop-In✓ Auf Lager
$6.1 / Stück
Datenblatt ansehen →IXKH47N60C
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
STW45NM60-H Grenzwerte & elektrische Eigenschaften
| FET Type | N-Channel |
| Technology | MDmesh (super-junction) |
| Drain-Source Voltage (VDS) | 600 V (650 V at TJMAX) |
| Continuous Drain Current (ID) | 45 A at Tc = 25 °C |
| Power Dissipation (PD) | 417 W at Tc = 25 °C |
| On-Resistance (RDS(on)) | 0.09 Ω typical at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th)) | 4 V typical |
| Betriebstemperaturbereich | -55 °C to +150 °C (TJ) |
| Gehäuse | TO-247-3 (through-hole) |
| Montageart | Through Hole |
| Avalanche Rating | 100% avalanche tested |
| dv/dt Capability | High |
| RoHS-Status | Compliant |
STW45NM60-H Pin-Konfiguration
| Pin 1 | Gate — Gate input - drive with 10-15 V relative to Source |
| Pin 2 | Drain — Drain output - connected to TO-247 tab for thermal dissipation |
| Pin 3 | Source — Source reference - connect to gate-drive return |
Sicherer Arbeitsbereich (DC)
Typische Anwendungen
STW45NM60-H ist geeignet für 6 Anwendungs: PFC Boost Converter Front-End, Switched-Mode Power Supply (SMPS), Industrial Motor Drive (VFD), Uninterruptible Power Supply (UPS), Induction Heating Inverter, Solar Inverter DC-DC Stage.
PFC Boost Converter Front-End
The STW45NM60-H is a strong fit for continuous-conduction-mode (CCM) power-factor-correction (PFC) boost converters operating from rectified 230 V single-phase or 400 V three-phase mains. The 600 V V(BR)DSS gives ~200 V margin above the peak rectified 400 V line, the 0.09 Ω RDS(on) keeps full-load conduction loss low, and the MDmesh cell's low dynamic drain capacitance cuts switching loss at 65-100 kHz switching frequencies. In a typical 3 kW PFC stage, the part handles the boost switch position with adequate thermal margin on a properly sized heatsink; two STW45NM60-H MOSFETs in parallel further reduce conduction loss and share thermal load, with the standard gate-drive arrangement of 10-47 Ω gate resistors and a small RC snubber across D-S.
Empfohlen
Switched-Mode Power Supply (SMPS)
In hard-switched half-bridge and full-bridge SMPS topologies from 1 kW to 5 kW, the STW45NM60-H serves as the primary-side high-side or low-side switch with strong performance. The 600 V rating suits 390 VDC bus operation from rectified 230 V mains, and the 100% avalanche-tested ruggedness provides additional margin against transformer leakage-induced voltage spikes - a common failure mode in poorly clamped SMPS designs. Compared to planar 600 V MOSFETs of the same die size, the MDmesh architecture delivers noticeably lower switching loss, enabling either higher switching frequency (smaller magnetics) or higher efficiency at the same frequency. Typical gate-drive uses a 12-15 V UCC gate-driver with 10 Ω external gate resistance to control dv/dt and EMI.
Empfohlen
Industrial Motor Drive (VFD)
Variable-frequency drives (VFDs) for industrial three-phase induction motors up to 7.5 kW commonly use 600 V MOSFETs or IGBTs in the inverter stage. The STW45NM60-H is suitable for VFD inverters with switching frequencies of 8-20 kHz, where MDmesh conduction and switching losses balance well. In a typical 5 kW VFD, six STW45NM60-H MOSFETs (three high-side + three low-side) drive the motor phases from a 540 VDC bus produced by a three-phase PFC front-end. The TO-247-3 package simplifies heatsink mounting and isolation, and the part's avalanche ruggedness tolerates the back-EMF transients that occur when the motor's inductance commutates currents during PWM dead-time events.
Empfohlen
Uninterruptible Power Supply (UPS)
Double-conversion online UPS systems in the 3-10 kVA range use the STW45NM60-H in the battery-to-AC inverter stage, where the device switches a 384 VDC battery bus into a low-frequency step-up transformer for AC output. The 600 V breakdown gives comfortable margin above the 384 VDC bus, and the 45 A continuous current capability matches typical 5 kVA inverter ratings with adequate thermal margin. The avalanche ruggedness is particularly valuable during load-step transients, where the transformer leakage inductance can briefly overshoot the bus voltage. In redundant (N+1) UPS architectures, paralleled STW45NM60-H pairs also share current during overload conditions before transfer to bypass.
Empfohlen
Induction Heating Inverter
Resonant inverters for induction-heating cooktops and industrial induction heaters use 600 V MOSFETs in class-D or class-E topologies switching at 20-100 kHz into an LC resonant tank formed by the heating coil. The STW45NM60-H's MDmesh technology delivers low dynamic drain capacitance - a critical parameter for zero-voltage-switching (ZVS) resonant designs that minimize switching loss. The 45 A continuous rating supports 3-5 kW single-burner cooktop inverters, and the avalanche rating tolerates the reflected-load transients that occur when a ferrous pan is removed during heating. The TO-247-3 package mounts easily to the cooktop's aluminum heatsink or chassis plate, providing both electrical grounding path and thermal dissipation.
Empfohlen
Solar Inverter DC-DC Stage
In string inverters for residential and small-commercial photovoltaic systems, the STW45NM60-H fits the boost or buck DC-DC converter that lifts the variable PV string voltage (typically 200-600 VDC open-circuit) to a fixed 600-800 VDC bus feeding the grid-tie AC stage. The MDmesh low RDS(on) of 0.09 Ω optimizes full-load efficiency, directly impacting CEC-weighted inverter efficiency - a key regulatory metric. For transformerless single-string inverters up to 5 kW, a single STW45NM60-H per switching position provides adequate current capability; for three-string or commercial inverters above 10 kW, multiple paralleled devices are used. The avalanche rating provides additional margin against PV array-induced voltage transients from nearby lightning events.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für STW45NM60-H – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | STW45NM60 | STW30NM60N | STW38NM60N | SPW47N60C3 | IXKH47N60C |
|---|---|---|---|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | IXYS |
| Package | TO-247-3 | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 650 V | 600 V |
| Continuous Drain Current | 45 A | 45 A | 30 A | 38 A | 47 A | 47 A |
| On-Resistance (RDS(on)) | 0.090 Ω | 0.090 Ω | 0.110 Ω | 0.095 Ω | 0.070 Ω | 0.085 Ω |
| Power Dissipation | 417 W | 417 W | ~250 W | ~370 W | ~415 W | ~400 W |
| Technology | MDmesh (super-junction) | MDmesh | MDmesh | MDmesh | CoolMOS C3 | CoolMOS-class |
| Avalanche Rated | Yes (100% tested) | Yes | Yes | Yes | Yes | Yes |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- Industry-leading 0.09 Ω RDS(on) in MDmesh TO-247-3 family (vs. STW30NM60N)
- ST's proprietary MDmesh super-junction technology (vs. SPW47N60C3 (Infineon CoolMOS C3))
- 100% avalanche-tested ruggedness (vs. IXKH47N60C)
Designhinweise
Estimated: at full-load operation (45 A continuous, RDS(on) = 0.09 Ω), the STW45NM60-H dissipates roughly 182 W as conduction loss alone (P = I² × R = 45² × 0.09). Combined with switching loss, total dissipation typically reaches 200-250 W in a hard-switched PFC stage. Use RθJC of approximately 0.30 °C/W (TO-247 datasheet figure) and choose a heatsink with RθSA ≤ 0.20 °C/W to keep junction temperature below 125 °C at 50 °C ambient. Apply thermal interface material (TIM) with conductivity ≥ 3 W/m·K; torquing the TO-247 mounting hardware to 0.6-0.8 N·m ensures uniform TIM thickness.
Keep the gate-drive loop (gate-drive IC output → gate resistor → MOSFET gate → source lead → gate-drive IC return) physically small, ideally under 20 mm of total loop length, to minimize parasitic inductance that causes gate-oscillation and dv/dt-induced shoot-through. Place a 10 kΩ gate-source pull-down resistor on each MOSFET to hold the device off during controller start-up or fault conditions. For half-bridge layouts, place the high-side and low-side gate-drive returns directly at the respective Source pins, not at a shared ground plane that carries commutating currents.
Do not exceed the Safe Operating Area (SOA) at low VDS - the part can deliver high current only above roughly 5-10 V VDS. Sustained operation in the linear region (e.g., during soft-start or short-circuit) must be limited to the SOA envelope, which typically allows only a few amps below 5 V VDS. Adding a small RC snubber (R = 5-20 Ω, C = 0.5-2 nF, high-voltage film or ceramic) across drain-source suppresses voltage spikes from transformer leakage inductance and reduces dv/dt stress on the MOSFET and downstream rectifier.
The fast switching edges of an MDmesh MOSFET can produce EMI above EN 55022 Class B limits without filtering. A 10-47 Ω gate resistor slows the turn-on/turn-off dV/dt - larger values reduce EMI at the cost of higher switching loss. A small ferrite bead on the gate lead damps high-frequency gate-loop ringing. For input EMI filtering, add a common-mode choke and X/Y safety capacitors on the AC input side; for DC-side conducted emissions, a small LC π-filter between the rectifier and the PFC stage attenuates ripple conducted noise.
Compliance-Informationen
RoHS and REACH compliant per STMicroelectronics product compliance statement for STW45NM60 / STW45NM60-H. AEC-Q100 not applicable - this is a through-hole discrete power MOSFET designed for industrial/consumer applications. Conflict-mineral reporting (3TG) maintained by ST.
