UCC21521ADWR vs UCC21550BDWR Vergleich

Detaillierter Direktvergleich von UCC21521ADWR von Texas Instruments und UCC21550BDWR von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC21521ADWR UCC21521ADWR - 5.7kVrms 4A/6A Isolated Gate Driver | TI

UCC21521ADWR - 5.7kVrms 4A/6A Isolated Gate Driver | TI

UCC21521ADWR ✓ Aktiv

Spezifikationsvergleich

Parameter UCC21521ADWR UCC21550BDWR
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,41 $0,88
Product Type Isolated dual-channel gate driver —
Kanäle 2 —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Rating 5700 Vrms (reinforced) —
Isolation Technology Capacitive coupling —
UVLO Threshold Option 8 V —
Enable-Pin Yes —
Input Configuration Dual input, inverting / non-inverting —
Driver Configuration Dual low-side, dual high-side, or half-bridge —
Dead Time Control Programmable —
Gehäuse 16-SOIC (DW) 16-SOIC (DW)
Montageart Surface Mount Surface Mount
Betriebstemperatur [DATA_NEEDED: operating temperature range] —
RoHS-Status Compliant [DATA_NEEDED: RoHS status]
Marking Code UCC21521A —
Ausgangskonfiguration — Dual-channel (dual low-side, dual high-side, or half-bridge)
Isolation Type — Capacitive coupling, reinforced isolation
Isolation Voltage — 5000 Vrms
CMTI (Common-Mode Transient Immunity) — > 125 V/ns
VDD Output Supply Range — Up to 25 V
UVLO Threshold — 8 V (VDD UVLO)
Programmable Dead Time — Yes
Disable Function — Yes
Junction Temperature Range — -40 C to +150 C
Driven Devices — Power MOSFET, SiC MOSFET, GaN FET, IGBT

Datenblätter & Ressourcen

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