UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
Teilenummer: UCC21550BDWR ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.26 | $1,26 |
| 10 | $1.18 | $11,80 |
| 100 | $1.05 | $105,00 |
| 500 | $0.95 | $475,00 |
| 1.000 | $0.88 | $880,00 |
UCC21550BDWR Übersicht
An isolated gate driver is a power-management IC that transfers a logic-level PWM signal across a galvanic isolation barrier to drive the gate of a power transistor such as a MOSFET, SiC MOSFET, GaN FET, or IGBT sitting on a high-voltage or floating potential. It sits in the signal chain between the PWM controller or microcontroller and the power stage, forming the critical interface in any isolated power conversion system.
Key features include universal configuration as two low-side drivers, two high-side drivers, or one half-bridge driver; programmable dead time for shoot-through protection; a disable function; VDD output supply up to 25 V for direct drive of wide-bandgap devices; and a junction temperature range of -40 C to +150 C for demanding thermal environments. The capacitive coupling isolation technology provides a minimum isolation withstand of 5000 Vrms.
Architecturally, the input side is isolated from the two output drivers by a silicon-dioxide capacitive isolation barrier, which rejects the extremely fast dv/dt transients generated by SiC and GaN power stages. The 8 V UVLO threshold ensures outputs are held low until the driver supply is stable, preventing half-bridge shoot-through during startup.
Typical applications include solar inverters, motor drives, server and telecom power supplies, on-board chargers, and industrial half-bridge power stages using SiC or IGBT switches.
Design-wise, place a low-ESR decoupling capacitor close to VDD/VSS on both sides of the barrier, and use the programmable dead-time pins to match the switching characteristics of the selected power transistor.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für UCC21550BDWR – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit UCC21550BDWR (gleiche Bauform und Footprint) – abweichend in Package, Disable Function, Isolation Technology, Configuration, Dead Time.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
UCC21550ADWR
✅ Drop-In✓ Auf Lager
$1.19 / Stück
Datenblatt ansehen →UCC21550BQDWRQ1
✅ Drop-In✓ Auf Lager
$2.45 / Stück
Datenblatt ansehen →UCC21550AQDWKRQ1
✅ Drop-In✓ Auf Lager
$2.2 / Stück
Datenblatt ansehen →UCC21540DW
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
UCC21520DW
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
UCC21550BDWR Grenzwerte & elektrische Eigenschaften
| Ausgangskonfiguration | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| Peak Source Current | 4 A |
| Peak Sink Current | 6 A |
| Isolation Type | Capacitive coupling, reinforced isolation |
| Isolation Voltage | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns |
| VDD Output Supply Range | Up to 25 V |
| UVLO Threshold | 8 V (VDD UVLO) |
| Programmable Dead Time | Yes |
| Disable Function | Yes |
| Junction Temperature Range | -40 C to +150 C |
| Gehäuse | 16-SOIC (DW) |
| Montageart | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
UCC21550BDWR 16-soic (dw) Pinbelegungsleitfaden
Pinbelegung für UCC21550BDWR (16-soic (dw)-Gehäuse). Dieses Leistungsbauteil verfügt über Gate-, Drain- und Source-Anschlüsse. Bei nicht gepolten Gehäusen entnehmen Sie die genaue Ausrichtung von Pin 1 und Footprint-Details dem Herstellerdatenblatt. Typische Anwendungen sind Netzteilentwurf, Motoransteuerung und Lastschaltung.
Keine detaillierten Pinbelegungsdaten verfügbar für UCC21550BDWR.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
UCC21550BDWR ist geeignet für 6 Anwendungs: Solar String and Micro Inverters, Industrial Motor Drives, Server and Telecom Power Supplies, EV On-Board Chargers and DC-DC Converters, GaN-Based High-Frequency Power Stages, UPS and Energy Storage Systems.
Solar String and Micro Inverters
In solar inverters, the UCC21550BDWR drives the SiC or IGBT half-bridge switches of the DC-DC boost and DC-AC inverter stages, where its 5000 Vrms reinforced isolation separates the low-voltage control electronics from the high-voltage PV bus. The CMTI above 125 V/ns keeps outputs stable during the fast switching edges typical of SiC stages switching hundreds of volts, and the programmable dead time prevents cross-conduction losses that would otherwise erode conversion efficiency. Configured as a half-bridge driver, a single UCC21550 device drives both the high-side and low-side switches of one bridge leg, reducing BOM count. Placing the device close to the gate resistors with dedicated VDD decoupling minimizes gate-loop inductance and switching ringing, improving EMI performance at the 16-50 kHz switching frequencies common in string inverters.
Empfohlen
Industrial Motor Drives
Three-phase industrial motor drives use six power switches organized as three half-bridge legs, and the UCC21550BDWR serves as the isolated interface between the motor-control MCU and each leg's IGBT or SiC modules. Its dual-channel architecture covers one complete leg per device, and the 6 A peak sink current ensures fast, clean IGBT turn-off, reducing tail-current switching losses at inverter switching frequencies of 5-20 kHz. The 8 V VDD UVLO holds the gates low during bias startup, protecting the power stage from partial-drive operation that would cause device failure. The wide -40 C to +150 C junction range accommodates the elevated ambient temperatures inside sealed drive enclosures. Using the disable pin allows safe fault shutdown when overcurrent or overtemperature events are detected by the system controller.
Empfohlen
Server and Telecom Power Supplies
High-density server and telecom AC-DC power supplies operating from 400 V PFC buses rely on the UCC21550BDWR to drive the boost and LLC half-bridge power stages with reinforced isolation to SELV outputs. The driver's low propagation delay and tight channel-to-channel matching help maintain symmetrical duty cycles in the LLC converter, which directly affects output ripple and regulation accuracy. Because these supplies switch at hundreds of kilohertz with SiC or superjunction MOSFETs, the > 125 V/ns CMTI prevents common-mode glitches from the fast-switching power node from corrupting driver outputs. The compact 16-SOIC package fits the constrained board area of power modules, and the programmable dead time lets designers tune the LLC dead time to achieve zero-voltage switching across the load range, maximizing efficiency toward 80 PLUS Titanium targets.
Empfohlen
EV On-Board Chargers and DC-DC Converters
Electric-vehicle on-board chargers (OBC) and auxiliary DC-DC converters bridge the 400-800 V traction battery to the 12 V low-voltage system, requiring reinforced isolated gate drivers with automotive-grade reliability. The UCC21550BQDWRQ1, the automotive-qualified member of the same family in the same 16-SOIC footprint, is selected for these designs while allowing a common layout with the commercial UCC21550BDWR for industrial derivatives. The driver's 4 A/6 A output stage handles the large gate charges of 1200 V SiC MOSFETs used in totem-pole PFC and CLLC resonant stages, and the programmable dead time supports the synchronous rectification schemes these topologies demand. The -40 C to +150 C junction range covers underhood and underbody temperature environments, and the disable function supports system-level functional-safety shutdown paths.
Empfohlen
GaN-Based High-Frequency Power Stages
GaN FET power stages switching at 500 kHz to 2 MHz impose the most demanding requirements on gate drivers: sub-10 ns propagation delays, strong sink current for fast turn-off, and extreme CMTI because switching nodes slew at several hundred volts per nanosecond. The UCC21550BDWR's > 125 V/ns CMTI rating and 6 A peak sink current directly address these needs, while its VDD supply range up to 25 V accommodates the 5-6 V gate-drive windows of e-mode GaN devices with appropriate external regulation, including split-rail biasing for negative off-state gate voltage. Configured as a dual low-side driver, one package drives both switches of a bridge leg in applications such as Class-D audio amplifiers, LiDAR pulse drivers, and high-frequency LLC converters where GaN's low switching losses justify the system complexity.
Empfohlen
UPS and Energy Storage Systems
Uninterruptible power supplies and battery energy storage systems combine bidirectional DC-AC conversion with high-voltage battery buses, and the UCC21550BDWR provides the reinforced isolated drive for their IGBT and SiC bridge stages. The 5000 Vrms isolation rating supports the creepage and clearance requirements between the battery domain and the AC grid domain, and the capacitive isolation barrier offers long-term reliability with isolation lifetime exceeding 40 years per TI material data cited by distributors. The programmable dead time is essential during bidirectional mode transitions, preventing shoot-through when the power flow direction changes rapidly. The disable pin integrates with the UPS supervisory controller to isolate the power stage within microseconds during grid faults, and the wide junction temperature range tolerates the thermally cyclic environments typical of backup power installations.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für UCC21550BDWR – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | UCC21550ADWR | UCC21550BQDWRQ1 | UCC21540DW | UCC21520DW |
|---|---|---|---|---|---|
| Package | 16-SOIC (DW) | 16-SOIC (DW) - same | 16-SOIC (DW) - same | 16-SOIC (DW) - same | 16-SOIC (DW) - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
Wichtigste Unterscheidungsmerkmale
- Programmable dead time on-chip (vs. UCC21540DW)
- Reinforced isolation grade (B) (vs. UCC21550ADWR)
- 6 A peak sink current for fast turn-off (vs. UCC21520DW)
Designhinweise
Place a low-ESR ceramic decoupling capacitor (typically 1 uF plus 0.1 uF) directly across VDDA/VSSA and VDDB/VSSB on the output side, and a local bypass on VCCI on the input side. Keep the gate-drive loop (driver output, gate resistor, MOSFET gate, source return) as small as possible to limit parasitic inductance; every nH of loop inductance adds ringing proportional to di/dt. Route the INA/INB traces away from the high-dv/dt switching node and reference them to the isolated input-side ground to preserve signal integrity across the barrier.
Estimated: gate-drive power per channel is Qg * fsw * VDD; for a SiC MOSFET with Qg = 60 nC, fsw = 100 kHz, and VDD = 18 V, the driver must supply approximately 108 mW per channel plus its own quiescent consumption. Size the isolated bias supply (e.g., a fly-buck or push-pull auxiliary) with margin for both channels and verify the VDD UVLO (8 V) never trips during transient loads. Use separate bootstrap or isolated rails per channel in half-bridge configuration and confirm bootstrap refresh at minimum duty cycles.
Do not leave the disable (DIS) pin floating - tie it to its inactive level per the datasheet to avoid undefined driver states. When using the programmable dead-time function, set the dead time longer than the worst-case switching time of the power device (including turn-off delay and current tail in IGBTs) to guarantee shoot-through immunity across temperature. In SiC applications, always verify the effective CMTI at your actual bus voltage; the > 125 V/ns rating is a minimum and system-level dv/dt with fast gate resistors can exceed expected values.
Compliance-Informationen
Compliance status not present in retrieved data; verify RoHS/REACH status on the TI product page for UCC21550BDWR. The automotive Q1 variant (UCC21550BQDWRQ1) covers automotive qualification needs.