UCC21540QDWKRQ1 vs UCC21530 Vergleich

Detaillierter Direktvergleich von UCC21540QDWKRQ1 von Texas Instruments und UCC21530 von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC21530 UCC21530 - 4A/6A 5.7kVRMS Isolated Dual Gate Driver | TI

UCC21530 - 4A/6A 5.7kVRMS Isolated Dual Gate Driver | TI

UCC21530 ✓ Aktiv

Spezifikationsvergleich

Parameter UCC21540QDWKRQ1 UCC21530
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,21 $1,75
Number of Channels 2 —
Isolation Type Reinforced, capacitive coupling Capacitive, reinforced
Isolation Voltage 5700 VRMS —
Peak Source Current 4 A —
Peak Sink Current 6 A —
Channel-to-Channel Spacing 3.3 mm minimum (DWK package) 3.3 mm
Dead Time Programmable (external resistor) —
Target Transistors Power MOSFET, IGBT, GaN —
Configuration Options Dual low-side, dual high-side, or half-bridge —
UVLO 8 V (secondary side) Yes, input and output sides
Automotive Qualification AEC-Q100 —
Gehäuse 14-SOIC (DWK) SOIC-14 (DWK), surface mount
Montageart Surface Mount —
Betriebstemperatur Wide temperature range (automotive) [DATA_NEEDED: operating temperature range]
RoHS-Status Compliant Compliant
Kanäle — 2 (isolated dual-channel)
Peak Output Current (Source) — 4 A
Peak Output Current (Sink) — 6 A
Isolation Rating — 5700 Vrms
CMTI (Common-Mode Transient Immunity) — 125 V/ns minimum
Max Switching Frequency — 5 MHz
Enable-Pin — Yes
Programmable Dead Time — Yes (DT pin)
Target Power Devices — IGBT, Si MOSFET, SiC MOSFET
Propagation Delay — [DATA_NEEDED: propagation delay typ]
Supply Voltage (VDD) — [DATA_NEEDED: VDD range]

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