UCC21540QDWKRQ1 vs UCC21710QDWRQ1 Vergleich

Detaillierter Direktvergleich von UCC21540QDWKRQ1 von Texas Instruments und UCC21710QDWRQ1 von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC21710QDWRQ1 UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive

UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive

UCC21710QDWRQ1 ✓ Aktiv

Spezifikationsvergleich

Parameter UCC21540QDWKRQ1 UCC21710QDWRQ1
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,21 $2,74
Number of Channels 2 —
Isolation Type Reinforced, capacitive coupling —
Isolation Voltage 5700 VRMS —
Peak Source Current 4 A +10 A
Peak Sink Current 6 A -10 A
Channel-to-Channel Spacing 3.3 mm minimum (DWK package) —
Dead Time Programmable (external resistor) —
Target Transistors Power MOSFET, IGBT, GaN —
Configuration Options Dual low-side, dual high-side, or half-bridge —
UVLO 8 V (secondary side) —
Automotive Qualification AEC-Q100 AEC-Q100
Gehäuse 14-SOIC (DWK) 16-SOIC (DW) wide-body
Montageart Surface Mount Surface Mount
Betriebstemperatur Wide temperature range (automotive) —
RoHS-Status Compliant —
Funktion — Single-channel isolated gate driver
Isolation Technology — SiO2 capacitive coupling
Isolation Rating (rms) — 5.7 kVrms (reinforced)
Working Voltage (rms) — 1.5 kVrms
Target Switches — SiC MOSFETs up to 1700 V, IGBTs
Propagation Delay (typ.) — 60 ns
CMTI (min.) — 100 V/ns
Output Supply Voltage (VCC2/VEE2) — 12.8 V to 18 V
Input Supply Voltage (VDD/VCCI) — 3 V to 5.5 V
Protection Features — DESAT, Miller clamp, UVLO, FLT, soft turn-off
Betriebstemperaturbereich — -40 C to +150 C
RoHS — Compliant

Datenblätter & Ressourcen

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