UCC21550BDWR vs UCC21521ADWR Vergleich
Detaillierter Direktvergleich von UCC21550BDWR von Texas Instruments und UCC21521ADWR von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ AktivSpezifikationsvergleich
| Parameter | UCC21550BDWR | UCC21521ADWR |
|---|---|---|
| Marke | Texas Instruments | Texas Instruments |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,88 | $2,41 |
| Ausgangskonfiguration | Dual-channel (dual low-side, dual high-side, or half-bridge) | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling, reinforced isolation | — |
| Isolation Voltage | 5000 Vrms | — |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns | — |
| VDD Output Supply Range | Up to 25 V | — |
| UVLO Threshold | 8 V (VDD UVLO) | — |
| Programmable Dead Time | Yes | — |
| Disable Function | Yes | — |
| Junction Temperature Range | -40 C to +150 C | — |
| Gehäuse | 16-SOIC (DW) | 16-SOIC (DW) |
| Montageart | Surface Mount | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| Product Type | — | Isolated dual-channel gate driver |
| Kanäle | — | 2 |
| Isolation Rating | — | 5700 Vrms (reinforced) |
| Isolation Technology | — | Capacitive coupling |
| UVLO Threshold Option | — | 8 V |
| Enable-Pin | — | Yes |
| Input Configuration | — | Dual input, inverting / non-inverting |
| Driver Configuration | — | Dual low-side, dual high-side, or half-bridge |
| Dead Time Control | — | Programmable |
| Betriebstemperatur | — | [DATA_NEEDED: operating temperature range] |
| Marking Code | — | UCC21521A |