UCC21550BDWR vs UCC21521ADWR Сравнение
Подробное сравнение бок о бок UCC21550BDWR от Texas Instruments и UCC21521ADWR от Texas Instruments. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ АктивенСравнение характеристик
| Параметр | UCC21550BDWR | UCC21521ADWR |
|---|---|---|
| Бренд | Texas Instruments | Texas Instruments |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,88 | $2,41 |
| Выходная конфигурация | Dual-channel (dual low-side, dual high-side, or half-bridge) | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling, reinforced isolation | — |
| Isolation Voltage | 5000 Vrms | — |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns | — |
| VDD Output Supply Range | Up to 25 V | — |
| UVLO Threshold | 8 V (VDD UVLO) | — |
| Programmable Dead Time | Yes | — |
| Disable Function | Yes | — |
| Junction Temperature Range | -40 C to +150 C | — |
| Корпус | 16-SOIC (DW) | 16-SOIC (DW) |
| Тип монтажа | Surface Mount | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| Статус RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Product Type | — | Isolated dual-channel gate driver |
| Каналы | — | 2 |
| Isolation Rating | — | 5700 Vrms (reinforced) |
| Isolation Technology | — | Capacitive coupling |
| UVLO Threshold Option | — | 8 V |
| Вывод разрешения | — | Yes |
| Input Configuration | — | Dual input, inverting / non-inverting |
| Driver Configuration | — | Dual low-side, dual high-side, or half-bridge |
| Dead Time Control | — | Programmable |
| Рабочая температура | — | [DATA_NEEDED: operating temperature range] |
| Marking Code | — | UCC21521A |