UCC21550BDWR vs UCC21521ADWR 비교
다음의 상세 나란히 비교: UCC21550BDWR 제조: Texas Instruments 및 UCC21521ADWR 제조: Texas Instruments. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ 활성사양 비교
| 파라미터 | UCC21550BDWR | UCC21521ADWR |
|---|---|---|
| 브랜드 | Texas Instruments | Texas Instruments |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.88 | $2.41 |
| 출력 구성 | Dual-channel (dual low-side, dual high-side, or half-bridge) | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling, reinforced isolation | — |
| Isolation Voltage | 5000 Vrms | — |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns | — |
| VDD Output Supply Range | Up to 25 V | — |
| UVLO Threshold | 8 V (VDD UVLO) | — |
| Programmable Dead Time | Yes | — |
| Disable Function | Yes | — |
| Junction Temperature Range | -40 C to +150 C | — |
| 패키지 | 16-SOIC (DW) | 16-SOIC (DW) |
| 실장 유형 | Surface Mount | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | Compliant |
| Product Type | — | Isolated dual-channel gate driver |
| 채널 수 | — | 2 |
| Isolation Rating | — | 5700 Vrms (reinforced) |
| Isolation Technology | — | Capacitive coupling |
| UVLO Threshold Option | — | 8 V |
| 인에이블 핀 | — | Yes |
| Input Configuration | — | Dual input, inverting / non-inverting |
| Driver Configuration | — | Dual low-side, dual high-side, or half-bridge |
| Dead Time Control | — | Programmable |
| 동작 온도 | — | [DATA_NEEDED: operating temperature range] |
| Marking Code | — | UCC21521A |