UCC21550BDWR vs UCC21550AQDWKRQ1 Vergleich

Detaillierter Direktvergleich von UCC21550BDWR von Texas Instruments und UCC21550AQDWKRQ1 von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC21550AQDWKRQ1 UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI

UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI

UCC21550AQDWKRQ1 ✓ Aktiv

Spezifikationsvergleich

Parameter UCC21550BDWR UCC21550AQDWKRQ1
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,88 $2,20
Ausgangskonfiguration Dual-channel (dual low-side, dual high-side, or half-bridge) —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Type Capacitive coupling, reinforced isolation —
Isolation Voltage 5000 Vrms 5000 Vrms
CMTI (Common-Mode Transient Immunity) > 125 V/ns —
VDD Output Supply Range Up to 25 V —
UVLO Threshold 8 V (VDD UVLO) —
Programmable Dead Time Yes —
Disable Function Yes Yes (DIS pin)
Junction Temperature Range -40 C to +150 C —
Gehäuse 16-SOIC (DW) 14-SOIC (DWK)
Montageart Surface Mount Surface Mount
Driven Devices Power MOSFET, SiC MOSFET, GaN FET, IGBT —
RoHS-Status [DATA_NEEDED: RoHS status] —
Product Type — Reinforced isolated dual-channel gate driver
Number of Channels — 2
Isolation Technology — Capacitive coupling
Configuration — Two low-side, two high-side, or half-bridge
Dead Time — Programmable via DT pin
Input Threshold Logic — TTL and CMOS compatible
Target Switch Types — Power MOSFET, SiC, GaN, IGBT
Qualification — Automotive (Q1)
Part Marking — 21550AQ
Betriebstemperaturbereich — [DATA_NEEDED: Operating Temperature Range]
Supply Voltage Range (VDD) — [DATA_NEEDED: Supply Voltage Range]

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