UCC21550Q-Q1 vs UCC21540QDWKRQ1 Vergleich

Detaillierter Direktvergleich von UCC21550Q-Q1 von Texas Instruments und UCC21540QDWKRQ1 von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC21550Q-Q1 UCC21550Q-Q1 - 4A/6A Isolated Dual Gate Driver | TI

UCC21550Q-Q1 - 4A/6A Isolated Dual Gate Driver | TI

UCC21550Q-Q1 ✓ Aktiv

Spezifikationsvergleich

Parameter UCC21550Q-Q1 UCC21540QDWKRQ1
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,10 $2,21
Product Type Reinforced isolated dual-channel gate driver —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Number of Channels 2 2
Isolation Rating 5000 Vrms (reinforced) —
Isolation Technology Capacitive coupling —
Configurations Dual low-side, dual high-side, or half-bridge —
Programmable Dead Time Yes (single resistor) —
Target Transistors Power MOSFET, SiC, GaN, IGBT Power MOSFET, IGBT, GaN
Betriebstemperatur -40C to +150C Wide temperature range (automotive)
Gehäuse 16-SOIC (DW) 14-SOIC (DWK)
Montageart Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified (Q1) AEC-Q100
Disable Function Yes —
RoHS-Status Compliant Compliant
Versorgungsspannung [DATA_NEEDED: VDD range] —
Isolation Type — Reinforced, capacitive coupling
Isolation Voltage — 5700 VRMS
Channel-to-Channel Spacing — 3.3 mm minimum (DWK package)
Dead Time — Programmable (external resistor)
Configuration Options — Dual low-side, dual high-side, or half-bridge
UVLO — 8 V (secondary side)

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern