UCC21710QDWRQ1 vs UCC21540QDWKRQ1 Vergleich

Detaillierter Direktvergleich von UCC21710QDWRQ1 von Texas Instruments und UCC21540QDWKRQ1 von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC21710QDWRQ1 UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive

UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive

UCC21710QDWRQ1 ✓ Aktiv

Spezifikationsvergleich

Parameter UCC21710QDWRQ1 UCC21540QDWKRQ1
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,74 $2,21
Funktion Single-channel isolated gate driver —
Isolation Technology SiO2 capacitive coupling —
Isolation Rating (rms) 5.7 kVrms (reinforced) —
Working Voltage (rms) 1.5 kVrms —
Peak Source Current +10 A 4 A
Peak Sink Current -10 A 6 A
Target Switches SiC MOSFETs up to 1700 V, IGBTs —
Propagation Delay (typ.) 60 ns —
CMTI (min.) 100 V/ns —
Output Supply Voltage (VCC2/VEE2) 12.8 V to 18 V —
Input Supply Voltage (VDD/VCCI) 3 V to 5.5 V —
Protection Features DESAT, Miller clamp, UVLO, FLT, soft turn-off —
Gehäuse 16-SOIC (DW) wide-body 14-SOIC (DWK)
Betriebstemperaturbereich -40 C to +150 C —
Automotive Qualification AEC-Q100 AEC-Q100
Montageart Surface Mount Surface Mount
RoHS Compliant —
Number of Channels — 2
Isolation Type — Reinforced, capacitive coupling
Isolation Voltage — 5700 VRMS
Channel-to-Channel Spacing — 3.3 mm minimum (DWK package)
Dead Time — Programmable (external resistor)
Target Transistors — Power MOSFET, IGBT, GaN
Configuration Options — Dual low-side, dual high-side, or half-bridge
UVLO — 8 V (secondary side)
Betriebstemperatur — Wide temperature range (automotive)
RoHS-Status — Compliant

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