UCC21710QDWRQ1 vs UCC21540QDWKRQ1 Comparación
Comparación detallada lado a lado de UCC21710QDWRQ1 por Texas Instruments y UCC21540QDWKRQ1 por Texas Instruments. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Texas Instruments
UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive
UCC21710QDWRQ1 ✓ ActivoTexas Instruments
UCC21540QDWKRQ1 - 5.7kVRMS Isolated Dual Gate Driver | Texas Instruments
UCC21540QDWKRQ1 ✓ ActivoComparación de especificaciones
| Parámetro | UCC21710QDWRQ1 | UCC21540QDWKRQ1 |
|---|---|---|
| Marca | Texas Instruments | Texas Instruments |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,74 | $2,21 |
| Función | Single-channel isolated gate driver | — |
| Isolation Technology | SiO2 capacitive coupling | — |
| Isolation Rating (rms) | 5.7 kVrms (reinforced) | — |
| Working Voltage (rms) | 1.5 kVrms | — |
| Peak Source Current | +10 A | 4 A |
| Peak Sink Current | -10 A | 6 A |
| Target Switches | SiC MOSFETs up to 1700 V, IGBTs | — |
| Propagation Delay (typ.) | 60 ns | — |
| CMTI (min.) | 100 V/ns | — |
| Output Supply Voltage (VCC2/VEE2) | 12.8 V to 18 V | — |
| Input Supply Voltage (VDD/VCCI) | 3 V to 5.5 V | — |
| Protection Features | DESAT, Miller clamp, UVLO, FLT, soft turn-off | — |
| Encapsulado | 16-SOIC (DW) wide-body | 14-SOIC (DWK) |
| Rango de temperatura de funcionamiento | -40 C to +150 C | — |
| Automotive Qualification | AEC-Q100 | AEC-Q100 |
| Tipo de montaje | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| Number of Channels | — | 2 |
| Isolation Type | — | Reinforced, capacitive coupling |
| Isolation Voltage | — | 5700 VRMS |
| Channel-to-Channel Spacing | — | 3.3 mm minimum (DWK package) |
| Dead Time | — | Programmable (external resistor) |
| Target Transistors | — | Power MOSFET, IGBT, GaN |
| Configuration Options | — | Dual low-side, dual high-side, or half-bridge |
| UVLO | — | 8 V (secondary side) |
| Temperatura de funcionamiento | — | Wide temperature range (automotive) |
| Estado RoHS | — | Compliant |