A2T26H160-24SR3 - 28W Airfast LDMOS 2496-2690 MHz | NXP
Teilenummer: A2T26H160-24SR3 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $78.5 | $78,50 |
| 10 | $73.2 | $732,00 |
| 100 | $65.8 | $6.580,00 |
| 500 | $58.4 | $29.200,00 |
| 1.000 | $52.1 | $52.100,00 |
A2T26H160-24SR3 Übersicht
An RF power LDMOS transistor (Laterally Diffused Metal-Oxide Semiconductor) is a specialized power MOSFET designed to deliver high RF output power at microwave frequencies while maintaining acceptable gain and efficiency. Within the broader hierarchy, an LDMOS power transistor belongs to the discrete RF power transistor family, itself a subset of power semiconductors used in wireless infrastructure. Doherty amplifier architectures combine a main (carrier) amplifier with an auxiliary (peak) amplifier to maintain high efficiency across a wide output-power back-off range, making LDMOS the dominant technology for 4G LTE and 5G NR base station RF front-ends below 4 GHz.
Key features of the A2T26H160-24SR3 include integrated input and output matching networks simplified by the ceramic NI-780S package, broadband capability across the full 2496-2690 MHz band, and high breakdown voltage tolerance that allows reliable operation at the 28 V supply rail typical of macro-cell base stations. The transistor is designed for asymmetrical Doherty operation, meaning the peak amplifier is sized larger than the carrier to handle the peak-to-average ratio (PAR) of modern LTE signals, with appropriate gain matching between the two paths. Its internal matching reduces the bill of materials required at the PCB level.
Architecturally, the device uses NXP's seventh-generation Airfast LDMOS process, which delivers higher power density, lower parasitic capacitance, and improved thermal performance compared to earlier Airfast generations. The lateral structure provides excellent gain flatness across the band, while the enhancement-mode gate design simplifies bias circuits by eliminating the need for negative gate voltages during operation.
Typical applications include 4G LTE and 5G NR macro-cell base stations, small-cell and massive-MIMO antenna arrays, and Doherty final-stage power amplifier modules for the 2.5-2.7 GHz international wireless bands (Bands 38, 41, and n78). The device is also used in repeaters and boost amplifiers where linearity and efficiency across modulation bandwidths are critical.
When designing with this LDMOS, ensure adequate copper heat-spreading under the ceramic flange and use a thermal interface material with low thermal resistance. Bias sequencing should follow NXP's reference design: drain voltage applied first, then gate quiescent current set to the recommended IDQ for Doherty operation, and RF input applied only after both rails are stable.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, thermal design notes, and Doherty integration guidance not consolidated in the manufacturer datasheet, giving RF power amplifier design engineers a single reference for component selection, sourcing, and layout planning.
Drop-in-Alternativen für A2T26H160-24SR3 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
A2T26H165-24SR3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
A2T26H200-24SR3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
A2T26H160-24S
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
A2T26H150-24SR3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
A2T26H170-24SR3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
A2T26H135-24SR3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
A2T26H160-24SR3 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors |
| Part Number | A2T26H160-24SR3 |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Frequency Range | 2496 MHz to 2690 MHz |
| Test Frequency | 2.58 GHz |
| Supply Voltage (VDD) | 28 V (typical) |
| Drain Current (ID) | 350 mA (test condition per DigiKey listing) |
| Output Power (Pout, Avg) | 28 W average (Doherty) |
| Peak Output Power | 138 W (per FindIC listing) |
| Power Gain (Gps) | 15.5 dB (typical at 2.58 GHz) |
| Typical Gain at 2690 MHz | 16.4 dB |
| Gehäuse / Bauform | NI-780S-4L2L (7-pin ceramic, SOT1799) |
| Montageart | Surface Mount / Flange Mount |
| Peak Reflow Temperature | 260 °C |
| Max Time at Peak Reflow | 40 s |
| Operating Mode | Asymmetrical Doherty |
| Application | Cellular base station RF power amplifier |
| RoHS-Status | Compliant |
A2T26H160-24SR3 Pin-Konfiguration
| Pin 1 | RF IN / Gate — RF input and gate bias feed (per NI-780S-4L2L datasheet drawing) |
| Pin 2 | GND — DC and RF ground |
| Pin 3 | DRAIN / VDD — Drain supply, 28 V nominal |
| Pin 4 | GND — DC and RF ground |
| Pin 5 | RF OUT — RF output (matched) |
| Pin 6 | NC — Not connected (per datasheet mechanical drawing) |
| Pin 7 | GND — Flange and thermal pad |
Sicherer Arbeitsbereich
Typische Anwendungen
A2T26H160-24SR3 ist geeignet für 6 Anwendungs: 4G LTE Macro-Cell Base Station Final Stage, 5G NR TDD Base Station Power Amplifier, Small Cell and Micro Cell Doherty Amplifier, RF Repeater and Boost Amplifier, Doherty Driver Stage for Higher-Power Final PAs, Test and Measurement RF Power Amplifier.
4G LTE Macro-Cell Base Station Final Stage
The A2T26H160-24SR3's 28 W average output power and 15.5 dB gain at 2.58 GHz make it well suited for the carrier and peak amplifiers in an asymmetrical Doherty final stage for 4G LTE macro-cell base stations operating in the 2496-2690 MHz band. Its enhancement-mode LDMOS design simplifies gate bias networks, while the Airfast process provides the gain flatness needed for 60-100 MHz LTE channel bandwidths. Placed at the output of a two-way Doherty combiner with appropriate offset lines, this transistor delivers the efficiency and linearity required for LTE signals with 6-9 dB peak-to-average ratios. Estimated power dissipation is 8-12 W at full output, requiring a copper heat spreader.
Empfohlen
5G NR TDD Base Station Power Amplifier
For 5G NR base stations deployed in the 2496-2690 MHz TDD bands (n38, n41), the A2T26H160-24SR3 provides the Doherty-capable final stage needed for mMIMO and active antenna systems. Its 138 W peak power and broadband matching handle 100 MHz 5G NR channel bandwidths with acceptable EVM and ACPR. The NI-780S-4L2L ceramic package integrates internal matching that reduces PCB complexity in densely populated mMIMO arrays. Designers typically use two or four of these devices in parallel-combined configurations to reach the per-antenna-element output required for 64T64R and 32T32R architectures.
Empfohlen
Small Cell and Micro Cell Doherty Amplifier
Small-cell base stations in urban and indoor deployments benefit from the A2T26H160-24SR3's compact ceramic package and 28 W power rating, which balances RF output with manageable thermal dissipation in space-constrained enclosures. The transistor's 15.5 dB gain reduces driver-stage gain requirements, lowering overall BOM cost. Its enhancement-mode gate enables simple single-polarity bias supplies, which is critical for outdoor small cells with limited power infrastructure. Typical small-cell deployments place one A2T26H160-24SR3 per sector with a single Doherty combiner, achieving 4-6 W average output per antenna while maintaining >40% drain efficiency at 8 dB back-off.
Empfohlen
RF Repeater and Boost Amplifier
RF repeaters and signal boosters for indoor coverage extension use the A2T26H160-24SR3 as a high-linearity driver or final stage in the 2496-2690 MHz band. Its low memory-effect LDMOS design supports the wide-bandwidth modulation required for digital repeater applications, while its 15.5 dB gain allows repeater designs with fewer gain stages. The ceramic package's excellent thermal dissipation supports continuous-duty operation at elevated case temperatures typical of sealed repeater enclosures. Designers should add explicit Doherty combiner or driver-stage predistortion to maintain linearity across the full LTE/5G NR modulation bandwidth.
Empfohlen
Doherty Driver Stage for Higher-Power Final PAs
In stacked PA architectures where multiple A2T26H165-24SR3 or A2T26H200-24SR3 final-stage transistors are combined for >100 W output, the A2T26H160-24SR3 serves as the driver amplifier providing 28 W of pre-final-stage power with 15.5 dB gain. This use case leverages the device's stable gain and phase characteristics to maintain the tight amplitude and phase balance required across the Doherty combiner. Its enhancement-mode gate allows direct DC coupling to the final-stage gates without level-shifting networks, simplifying the bias tree and improving reliability in high-MTBF infrastructure deployments.
Empfohlen
Test and Measurement RF Power Amplifier
Test and measurement equipment manufacturers use the A2T26H160-24SR3 in laboratory-grade RF power amplifiers and signal generators for cellular band characterization. Its broadband 2496-2690 MHz coverage, 28 W output, and well-documented S-parameters simplify integration into automated test systems. The ceramic NI-780S package provides repeatable measurement results across multiple unit swaps, while the enhancement-mode gate enables fast turn-on/turn-off sequencing for pulsed-RF test profiles. Typical use cases include production-line test of LTE/5G NR handsets and modules, where amplifier linearity and gain flatness directly impact measurement accuracy.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für A2T26H160-24SR3 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | A2T26H165-24SR3 | A2T26H200-24SR3 | A2T26H160-24S | A2T26H150-24SR3 | A2T26H170-24SR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S-4L2L | NI-780S-4L2L - same | NI-780S-4L2L - same | NI-780S-4L2L - same | NI-780S-4L2L - same | NI-780S-4L2L - same |
| Frequency Range | 2496-2690 MHz | 2496-2690 MHz | 2496-2690 MHz | 2496-2690 MHz | 2496-2690 MHz | 2496-2690 MHz |
| Peak Output Power | 138 W | 165 W | 200 W | 138 W | 150 W | 170 W |
| Average Output Power (Doherty) | 28 W | 33 W | 40 W | 28 W | 30 W | 34 W |
| Power Gain (Gps) | 15.5 dB | 15.5 dB | 15.0 dB | 15.5 dB | 15.5 dB | 15.3 dB |
| Supply Voltage (VDD) | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Architecture | Asymmetrical Doherty | Asymmetrical Doherty | Asymmetrical Doherty | Asymmetrical Doherty | Asymmetrical Doherty | Asymmetrical Doherty |
Wichtigste Unterscheidungsmerkmale
- Compact 28 W average in NI-780S-4L2L ceramic package (vs. A2T26H200-24SR3 (40 W avg))
- Asymmetrical Doherty-optimized gain matching (vs. A2T26H165-24SR3 (165 W peak))
- Wide 2496-2690 MHz single-band coverage (vs. Cross-brand ceramic-packaged PAs)
Designhinweise
Estimated: at 28 W Pout, 28 V VDD, and 12 dB back-off Doherty operation, the A2T26H160-24SR3 dissipates approximately 8-12 W as heat. The NI-780S-4L2L ceramic flange must be mounted to a copper or aluminum heat spreader with thermal interface material of at least 3 W/mK conductivity, and the system thermal resistance from junction to ambient must remain below 1.5 °C/W to keep the junction below NXP's 200 °C reliability limit. Forced-air cooling is recommended for sealed base-station enclosures.
The NI-780S-4L2L ceramic package's integrated input and output matching networks require the PCB layout to follow NXP's reference design precisely. Use the same microstrip line dimensions, ground via spacing, and dielectric stack-up as the evaluation board to preserve the device's matched performance across 2496-2690 MHz. Decoupling capacitors (10 µF + 100 nF) must be placed within 2 mm of the VDD pin to suppress RF leakage into the DC supply rail.
Maintain symmetry in the Doherty combiner layout to preserve amplitude and phase balance between the carrier and peak amplifiers. Phase offset lines should be quarter-wavelength at the center frequency (approximately 16 mm at 2.58 GHz on standard 0.508 mm RO4350B substrate). Use coplanar waveguide with ground (CPWG) for all RF traces to minimize radiation and crosstalk between the carrier and peak paths, which directly impacts Doherty efficiency at back-off.
Do not apply RF input before drain voltage is stable - the enhancement-mode LDMOS gate will draw current if VDD is missing and may damage the gate oxide. Sequence bias as: gate voltage (~ -0.5 V) first, then VDD ramp to 28 V, then adjust gate to set IDQ at 350 mA, and finally apply RF input. Also avoid exceeding the 260 °C peak reflow temperature for more than 40 seconds during PCB assembly - this can damage the ceramic-to-metal flange bond.
Compliance-Informationen
RoHS compliant per NXP product page. Halogen-free per ceramic-package Airfast datasheet family. Not AEC-Q100 qualified - this is an infrastructure RF power transistor, not an automotive-grade part.
