AT45DB041E-SHN2B-T - 4Mbit 1.65V SPI DataFlash 85MHz | Renesas
Teilenummer: AT45DB041E-SHN2B-T ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.28 | $128,00 |
| 500 | $1.05 | $525,00 |
| 1.000 | $0.92 | $920,00 |
AT45DB041E-SHN2B-T Übersicht
A DataFlash is a type of NOR flash memory that combines a serial SPI interface with a dual SRAM buffer architecture. The hierarchy is: NOR flash -> serial flash -> DataFlash. DataFlash devices fill the niche between small EEPROMs and larger parallel NOR flashes, optimizing for low pin count, low voltage, and byte/ page granular access. The AT45DB041E family is widely used for code shadowing, parameter storage, and data logging in battery-powered and embedded systems.
The AT45DB041E features dual SRAM buffers (256/264 bytes per page, configurable), a 4-Mbit main memory organized as 2048 pages of 256 bytes (or 2112 pages x 264 bytes), hardware and software write protection, sector erase, page program, and deep power-down with typically under 5 uA standby current. Per the manufacturer datasheet, the SPI clock can reach 85 MHz in standard mode and the device supports Page Erase, Block Erase (4 KB), and Sector Erase (64 KB) commands.
Architecturally the AT45DB041E integrates an SPI controller, command decoder, write state machine, and high-voltage generation circuits on a single die, with built-in ECC on each page. The continuous read mode enables sequential access without page boundary delays, simplifying firmware code-shadow implementations where the host copies flash content into RAM at boot.
Typical applications include firmware storage in IoT sensors, data logging in industrial metering, voice recorders, image storage in low-cost camera peripherals, and consumer wearables requiring small, low-power non-volatile storage. The wide 1.65 V to 3.6 V range supports both Li-ion and 3.3 V systems.
When designing with this part, ensure the CS signal is properly controlled to avoid partial writes, and consider adding a small decoupling capacitor (100 nF) close to VCC. The SOIC-8 EIAJ 208mil footprint has different pin spacing than a standard 150mil SOIC-8 - verify your PCB land pattern before placing the part.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing an engineer-focused decision aid for selecting the AT45DB041E in new designs.
Drop-in-Alternativen für AT45DB041E-SHN2B-T – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit AT45DB041E-SHN2B-T (gleiche Bauform und Footprint) – abweichend in Memory Type, Operating Temperature, Package, Maximum Clock Frequency, Interface Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
AT45DB041E-SSHN2B-T
✅ Drop-In✓ Auf Lager
$1.4 / Stück
Datenblatt ansehen →AT45DB041E-SHN-T
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
AT45DB041B-SHN-T
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
AT25DF041A-SH-B
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
AT25DF081A-SH-B
✅ Drop-In✓ Auf Lager
$0.58 / Stück
Datenblatt ansehen →AT45DB041E-SHN2B-T Grenzwerte & elektrische Eigenschaften
| Speichertyp | NOR Flash (DataFlash, SPI) |
| Speichergröße | 4 Mbit (512K x 8) plus 128 kbits extra |
| Speicherorganisation | 2048 pages x 256 bytes (or 2112 x 264 bytes) |
| Supply Voltage (VCC) | 1.65 V to 3.6 V |
| Schnittstellentyp | SPI (3-wire: SI, SO, SCK + CS) |
| Maximale Taktfrequenz | 85 MHz |
| Page Size | 256 bytes (or 264 bytes binary page mode) |
| SRAM Buffer | Dual, 256/264 bytes |
| Betriebstemperatur | -40C to +85C (industrial) |
| Gehäuse | 8-SOIC (EIAJ 208mil, 5.23 mm body width) |
| Montageart | Surface Mount |
| Packaging | Tape & Reel |
| RoHS-Status | Compliant |
| Sector Erase Size | 64 KB (4 KB block, 256-byte page erase) |
AT45DB041E-SHN2B-T Pin-Konfiguration
| Pin 1 | CS — Chip Select, active low |
| Pin 2 | SO — Serial Output (data from MOSI to host) |
| Pin 3 | WP — Write Protect, active low |
| Pin 4 | GND — Ground |
| Pin 5 | SI — Serial Input (data from host to MOSI) |
| Pin 6 | SCK — Serial Clock |
| Pin 7 | HOLD — Hold, active low |
| Pin 8 | VCC — Power supply, 1.65 V to 3.6 V |
Typische Anwendungen
AT45DB041E-SHN2B-T ist geeignet für 6 Anwendungs: IoT Sensor Data Logging, Industrial Metering and Logging, Consumer Wearable Firmware and Logs, Voice Recording and Audio Buffer, Code Shadowing in Embedded Systems, Image Storage for Low-Cost Camera Modules.
IoT Sensor Data Logging
The AT45DB041E-SHN2B-T fits IoT sensor data logging with its 4-Mbit capacity storing weeks of telemetry, dual SRAM buffers enabling receive-while-write without host pauses, and 1.65-3.6V supply supporting Li-ion and coin-cell rails. Its 85 MHz SPI clock lets low-power MCUs offload burst writes quickly, then return to sleep. Per Renesas datasheet, deep power-down current is in the microamp range, preserving battery life. The 256-byte page matches typical sensor sample blocks, and hardware WP plus HOLD pins enable shared SPI bus designs with multiple peripherals. This combination makes the part ideal for remote environmental monitors, smart agriculture nodes, and asset trackers where the host MCU is too resource-limited to manage raw SPI NOR state machines.
Empfohlen
Industrial Metering and Logging
The AT45DB041E-SHN2B-T suits industrial metering where power meters, gas meters, and flow totalizers need reliable non-volatile storage with tamper resistance. Per the datasheet, the device supports hardware and software write protection, sector erase (64 KB), and 100K endurance cycles - sufficient for monthly profile storage over a 10-year deployment. The wide -40C to +85C industrial temperature range handles outdoor enclosures and factory floors. Its dual SRAM buffer enables metering events to be captured even during background maintenance operations. The EIAJ 208mil SOIC package is easy to handle for through-hole reflow profiles and has robust thermal cycling tolerance, important for utility metering applications.
Empfohlen
Consumer Wearable Firmware and Logs
The AT45DB041E-SHN2B-T works in consumer wearables for storing firmware updates, user activity logs, and configuration. Its 1.65-3.6V supply matches Li-ion battery voltages directly, eliminating level shifters in compact wearable designs. The 4-Mbit capacity holds both application firmware (~1 Mbit for BLE stacks) and weeks of step/heart-rate data. The dual SRAM buffer architecture lets a low-power BLE SoC continue logging while flash writes are in progress, avoiding sample loss. Per Renesas datasheet, page erase and program times are predictable, important for boot-time update sequences. The 8-SOIC EIAJ 208mil footprint fits wristband PCBs with adequate clearances for antenna routing.
Empfohlen
Voice Recording and Audio Buffer
The AT45DB041E-SHN2B-T serves voice recording applications such as doorbells, intercoms, and toy recorders where short audio clips are captured and played back. Per the datasheet, continuous read mode allows streaming playback without page-boundary software handling, simplifying audio codec integration. The 256-byte page and dual buffer architecture align with typical 8 kHz/16 kHz sample ADPCM frames. At 4 Mbit the device stores roughly 60 seconds of 8 kHz 16-bit PCM audio, suitable for voice memo and security applications. The wide voltage range supports both 3.3V codec rails and 1.8V DSP cores, while deep power-down minimizes idle current in battery-powered doorbells.
Empfohlen
Code Shadowing in Embedded Systems
The AT45DB041E-SHN2B-T serves as a code-shadow target where the host MCU copies firmware from external flash into internal RAM at boot. With continuous read mode across page boundaries, the host DMA streams the entire image without software intervention, reducing boot time. Per the Renesas datasheet, the 85 MHz SPI clock enables a 4-Mbit image to load in approximately 60 ms at full speed. The 1.65-3.6V supply matches modern Cortex-M0/M4 rails directly. Industrial temperature grade and 20-year data retention (typical) meet long-deployment embedded product requirements such as building controllers and industrial HMIs.
Empfohlen
Image Storage for Low-Cost Camera Modules
The AT45DB041E-SHN2B-T stores JPEG snapshots from low-cost camera modules in doorbells, toys, and inspection tools. Its 4-Mbit capacity holds roughly 30-50 typical VGA JPEG frames depending on compression, with the dual SRAM buffer enabling capture-while-flush operation. Per Renesas datasheet, page program time of approximately 1.5 ms is fast enough for sequential snapshot scenarios at 1-2 fps. Hardware WP and HOLD pins simplify shared-bus designs where the camera MCU also drives an LCD preview. The wide voltage range accommodates single-cell battery-powered cameras, and the EIAJ 208mil SOIC withstands hand-soldering for prototype builds.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für AT45DB041E-SHN2B-T – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | AT45DB041E-SSHN2B-T | AT45DB041E-SHN-T | AT45DB041B-SHN-T | AT25DF041A-SH-B | AT25DF081A-SH-B |
|---|---|---|---|---|---|---|
| Brand | Renesas Electronics | Renesas Electronics | Renesas Electronics | Renesas Electronics | Renesas Electronics | Renesas Electronics |
| Package | 8-SOIC (EIAJ 208mil) | 8-SOIC (EIAJ 208mil) - same | 8-SOIC (EIAJ 208mil) - same | 8-SOIC (EIAJ 208mil) - same | 8-SOIC (EIAJ 208mil) - same | 8-SOIC (EIAJ 208mil) - same |
| Memory Density | 4 Mbit | 4 Mbit | 4 Mbit | 4 Mbit | 4 Mbit | 8 Mbit (+100%) |
| Memory Architecture | DataFlow (dual SRAM buffer) | DataFlow (dual SRAM buffer) | DataFlow (dual SRAM buffer) | DataFlow (dual SRAM buffer) | Standard SPI NOR | Standard SPI NOR |
| Supply Voltage | 1.65 V to 3.6 V | 1.65 V to 3.6 V | 1.65 V to 3.6 V | 2.5 V to 3.6 V | 2.5 V to 3.6 V | 2.5 V to 3.6 V |
| Max SPI Clock | 85 MHz | 85 MHz | 85 MHz | 70 MHz (-18%) | 100 MHz (+18%) | 100 MHz (+18%) |
| Page Size | 256 bytes (264 binary) | 256 bytes (264 binary) | 256 bytes (264 binary) | 256 bytes (264 binary) | 256 bytes | 256 bytes |
| Continuous Read | Yes (page-spanning) | Yes | Yes | Yes | No (page-boundary) | No (page-boundary) |
Wichtigste Unterscheidungsmerkmale
- Dual SRAM buffer enables receive-while-write without host pause (vs. AT25DF041A-SH-B)
- Continuous read mode across page boundaries (vs. AT25DF041A-SH-B)
- Wide 1.65 V minimum for single-bit vs dual-supply (vs. AT25DF041A-SH-B)
Designhinweise
Decouple the AT45DB041E-SHN2B-T VCC pin with a 100 nF X7R ceramic capacitor placed within 3 mm of the package, plus a 4.7 uF bulk capacitor on the same rail. The supply range 1.65-3.6 V permits direct connection to Li-ion and 3.3 V rails without level shifters. Estimated: at 85 MHz SCK with continuous read, average VCC current is approximately 15 mA; deep power-down drops below 5 uA typical per the datasheet.
The AT45DB041E-SHN2B-T uses an EIAJ 208mil SOIC-8 footprint, which is wider than the JEDEC 150mil SOIC-8. Do NOT reuse a 150mil land pattern - the pins will not sit on the pads. Route SCK as a short, matched-length trace and keep SI/SO traces away from noisy switching rails to avoid coupling. Place a guard ground via fence around the SCK trace for EMI-sensitive designs.
The CS signal must be deasserted (driven high) at the end of every command sequence; failure to do so may leave the device in an indeterminate state and cause the next read to return unexpected data. When sharing CS across multiple SPI devices, ensure only one CS is active at once - the AT45DB041E does not tri-state SO while CS is high, which can back-drive a shared bus. Use external bus switches if shared-bus operation is required.
Compliance-Informationen
RoHS compliant per Renesas product page. Halogen-free status not explicitly stated in the verified web data; consult Renesas for confirmation. Not AEC-Q100 qualified - this is a commercial/industrial grade part.
