BQ2982 - High-Side 1S Li-Ion Protector with Charge Pump | Texas Instruments
Teilenummer: BQ2982 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.12 | $1,12 |
| 10 | $1.05 | $10,50 |
| 100 | $0.92 | $92,00 |
| 500 | $0.78 | $390,00 |
| 1.000 | $0.65 | $650,00 |
| 3.000 | $0.55 | $1.650,00 |
BQ2982 Übersicht
What is a battery protector? A battery protector is a dedicated safety IC that monitors a rechargeable cell's voltage, current, and temperature, and disconnects the cell from the load or charger when an unsafe condition is detected. Within the broader taxonomy, the BQ2982 is a single-cell Li-ion protector, a sub-category of battery management ICs (BMICs), which themselves sit under power management semiconductors. Compared with general-purpose fuel-gauge ICs, protectors focus on fast hardware-level cutoff rather than coulomb counting.
Key features include the high-side NFET drive architecture (which keeps the protection FETs on the positive rail for simpler PCB layout and lower Rdson sensitivity to cell voltage), the integrated charge pump that maintains a constant VGS across the protection FET regardless of cell state-of-charge, and tight overcurrent thresholds that allow designers to use very low-value sense resistors (1 mΩ) for improved thermal efficiency. The X2QFN package footprint is among the smallest available for primary protection ICs, suiting space-constrained wearables and phones.
Technically, the BQ2982 uses a precision bandgap reference, a temperature-compensated current-sense comparator, and programmable delay timers (latch or auto-recover modes). The device supports both latched and auto-recovery output modes, allowing system designers to choose between hard shutdown (e.g., for SCD) and recoverable fault clearing (e.g., for temporary overload). Communication with the host is non-existent on this dedicated protector - all configuration is hardware-strapped via external resistors.
Typical applications include smartphones, tablets, power banks, wearables, TWS earbud charging cases, and other single-cell Li-ion/Li-polymer battery packs where high-side switching and ultra-low quiescent current are required. The device is also used in flash/fast-charging architectures where the high-side drive allows the system to maintain consistent FET Rdson during high inrush events.
When designing with the BQ2982, ensure the CTLC pin capacitor value matches the desired fault delay timing per the datasheet formulas, and use Kelvin-sense routing between the SRP/SRN pins and the sense resistor to preserve overcurrent accuracy. Always include TVS protection across the cell terminals and place the protector close to the cell to minimize parasitic inductance.
This page synthesizes distributor pricing, drop-in alternatives from the BQ298xx family, and practical design notes not found in the manufacturer datasheet alone, giving a complete procurement and design reference for the BQ2982.
Drop-in-Alternativen für BQ2982 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
BQ298215RUGR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BQ298216RUGR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BQ298218RUGR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BQ2980RUGR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BQ2970DSER
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BQ2982 Technische Daten
| Funktion | High-side battery protector with integrated charge-pump NFET driver |
| Battery Chemistry | Li-ion / Li-polymer (1S, single cell) |
| Cell Configuration | 1-series (1S) |
| Number of Cells Supported | 1 |
| FET Drive Topology | High-side NFET with charge pump |
| Minimum Sense Resistor | 1 mΩ (typical application) |
| Short-Circuit Detection (SCD) | Supported |
| Overcurrent during Charge (OCC) | Supported |
| Overcurrent during Discharge (OCD) | Supported |
| Betriebstemperaturbereich | -40°C to +85°C |
| Gehäuse | 8-pin X2QFN (RUGR) 1.5 mm × 1.5 mm |
| Montageart | Surface Mount |
| MSL-Level | 1 |
| RoHS-Status | Compliant |
| Lead-Free | Yes |
BQ2982 Pin-Konfiguration
| Pin 1 | BAT — Battery cell positive input |
| Pin 2 | SRP — Sense resistor positive input (Kelvin to high-side of Rsense) |
| Pin 3 | SRN — Sense resistor negative input (Kelvin to BAT+ side of Rsense) |
| Pin 4 | VSS — Ground |
| Pin 5 | OUT — Output to discharge MOSFET gate driver |
| Pin 6 | CHG — Output to charge MOSFET gate driver |
| Pin 7 | CTLC — Fault delay timer capacitor |
| Pin 8 | NC — Not connected (per datasheet) |
Typische Anwendungen
BQ2982 ist geeignet für 6 Anwendungs: Smartphone Single-Cell Battery Pack, TWS Earbud Charging Case, USB-C Power Bank, Wearable Fitness Tracker, Tablet Battery Pack, IoT Sensor Node Battery Pack.
Smartphone Single-Cell Battery Pack
The BQ2982 is well suited to smartphone Li-ion battery packs because its high-side NFET driver with integrated charge pump keeps the protection FET Rdson consistent across the 3.0 V to 4.2 V cell SOC curve, reducing conduction loss and improving thermal margin during fast charging up to 4 A. The 1 mΩ sense-resistor support lets designers minimize parasitic power dissipation in the protection path. Place the BQ2982 between the cell and the PACK+ output, with BAT connected to the cell+, OUT to the discharge MOSFET, and CHG to the charge MOSFET. Compared with low-side protectors, the BQ2982 avoids ground bounce that can confuse the USB-PD controller.
Empfohlen
TWS Earbud Charging Case
TWS earbud charging cases use a single Li-ion or Li-poly cell (typically 60-150 mAh) that must survive overcharge, overdischarge, and short-circuit events while drawing as little quiescent current as possible. The BQ2982's compact 1.5 mm × 1.5 mm X2QFN package fits next to the coin-cell or pouch cell on a 4-layer FR-4 PCB, and its high-side drive topology avoids disturbing the case's USB-C CC logic. With a 1 mΩ sense resistor, the BQ2982 cuts off charge within microseconds of an overcurrent event, protecting the small cell from catastrophic failure.
Empfohlen
USB-C Power Bank
Power banks for smartphones and tablets use 1S Li-ion cells with capacities from 5,000 mAh to 20,000 mAh, where high-side protection is critical to support USB-PD bidirectional power flow. The BQ2982's charge-pump FET driver maintains low and consistent Rdson across the cell voltage, minimizing drop across the protection FETs at high discharge currents (3-5 A). Designers pair the BQ2982 with a USB-PD controller such as the TPS65987 and a bidirectional buck-boost converter. The high-side architecture also allows the system MCU to measure cell voltage directly from PACK+ without ground-bounce noise from the load.
Empfohlen
Wearable Fitness Tracker
Wearable fitness trackers use ultra-small single-cell Li-poly batteries where PCB area is at a premium. The BQ2982's 1.5 mm × 1.5 mm X2QFN footprint occupies less than 2.25 mm² of board space, leaving room for the SoC, BLE radio, and PMIC. Its high-side protection also isolates the cell from the load during a fault, allowing the host MCU to enter its lowest sleep state while still monitoring for the wake-up charge cycle. Use a 1 mΩ sense resistor and Kelvin routing on the PCB to preserve overcurrent accuracy at the low end of the operating range.
Empfohlen
Tablet Battery Pack
Large-format tablets often use a single high-capacity Li-ion cell (8,000-12,000 mAh) charged at 2-3 C rates. The BQ2982's high-side topology and tight overcurrent threshold accuracy let designers use a single 1 mΩ sense resistor rather than stacking multiple FETs, reducing BOM cost and PCB area. The integrated charge pump ensures consistent FET VGS during the high-inrush events seen during USB-PD fast-charge, where cell voltage swings from 3.0 V to 4.2 V at 2-3 C. Reference the BQ2982 datasheet's CTLC delay-timer formulas when sizing fault delays.
Empfohlen
IoT Sensor Node Battery Pack
Battery-powered IoT sensor nodes (smart locks, asset trackers, environmental sensors) use single-cell Li-ion or LiSOCl₂ primary cells with 1-3 A peak loads during RF transmit. The BQ2982 protects the cell from the high inrush currents that occur when the radio wakes up, with a fast short-circuit detection response that latches off the FETs within microseconds. Its wide operating temperature range (-40°C to +85°C) and small footprint suit outdoor and industrial deployments. The high-side architecture also keeps the cell ground continuous with the system ground, simplifying PCB return-current routing.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für BQ2982 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | BQ298215RUGR | BQ298216RUGR | BQ298218RUGR | BQ2980RUGR | BQ2970DSER |
|---|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | 8-X2QFN (1.5x1.5 mm) | 8-X2QFN (1.5x1.5 mm) - same | 8-X2QFN (1.5x1.5 mm) - same | 8-X2QFN (1.5x1.5 mm) - same | 8-X2QFN (1.5x1.5 mm) - same | 6-WSON (1.5x1.5 mm) - smaller |
| FET Drive Topology | High-side NFET with charge pump | High-side NFET with charge pump | High-side NFET with charge pump | High-side NFET with charge pump | High-side NFET with charge pump | Low-side NFET |
| Cell Configuration | 1S Li-ion / Li-polymer | 1S Li-ion / Li-polymer | 1S Li-ion / Li-polymer | 1S Li-ion / Li-polymer | 1S Li-ion / Li-polymer | 1S Li-ion / Li-polymer |
| Short-Circuit Detection (SCD) | Supported | Supported | Supported | Supported | Supported | Supported |
| Pin-to-Pin Compatible | Yes | Yes | Yes | Yes | Yes | No (different topology and pinout) |
| Operating Temperature Range | -40°C to +85°C | -40°C to +85°C | -40°C to +85°C | -40°C to +85°C | -40°C to +85°C | -40°C to +85°C |
Wichtigste Unterscheidungsmerkmale
- Integrated charge pump maintains low Rdson across cell SOC curve (vs. BQ2970DSER (low-side topology))
- 1 mΩ sense-resistor support reduces parasitic dissipation (vs. DW01A (low-side competitor))
- Family of pin-compatible threshold variants on one footprint (vs. Single-threshold competitors)
Designhinweise
Use a 4-layer PCB with a dedicated ground plane directly under the BQ2982. Route the SRP and SRN traces as a Kelvin pair with equal length, equal width, and zero via count between the BQ2982 pins and the sense resistor pads. Place input/output capacitors (1 µF X7R minimum) within 2 mm of the BAT pin. Keep high-current discharge traces (OUT, PACK+) away from the SRP/SRN traces to avoid injecting common-mode noise into the current-sense path. The exposed thermal pad (pin 9) must be soldered to a continuous ground pour.
Estimated: at 2 A continuous discharge and a 1 mΩ sense resistor, the sense path dissipates I²R = 4 mW, which is negligible. The protection NFETs at 1 A each dissipate roughly 10-15 mW (assuming 10-15 mΩ Rdson). Under short-circuit conditions the BQ2982 latches off within microseconds, limiting the FET thermal stress to a few millijoules. No heatsink is required for the BQ2982 itself; ensure the protection FETs have adequate copper pour (>=50 mm² each) to dissipate continuous charge/discharge conduction losses.
Do not omit the CTLC capacitor - this component sets the fault delay timing and prevents false tripping on load transients. Do not parallel two BQ2982 devices on the same cell - the sense comparators will fight. Do not exceed the absolute-maximum cell voltage (refer to the datasheet's Abs Max section) - always include a TVS clamp across the cell terminals. If the application uses auto-recovery mode (vs latched), confirm the host can clear the fault within the device's recovery window or the system may oscillate.
Compliance-Informationen
RoHS and REACH compliant per TI BQ2982 product page. Halogen-free mold compound. Not AEC-Q100 qualified - not intended for automotive under-hood use.
