BSS84-7-F-W - P-Ch 50V 130mA SOT-23 MOSFET | Diodes Inc
Teilenummer: BSS84-7-F-W ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.09 | $0,09 |
| 10 | $0.07 | $0,70 |
| 100 | $0.05 | $5,00 |
| 500 | $0.04 | $20,00 |
| 1.000 | $0.03 | $30,00 |
| 3.000 | $0.025 | $75,00 |
BSS84-7-F-W Übersicht
A P-channel enhancement-mode MOSFET is a voltage-controlled semiconductor switch that conducts when the gate is pulled below the source potential. Within the power management hierarchy, it belongs to the small-signal MOSFET family, which sits under discrete transistors and general-purpose power semiconductors. Unlike N-channel devices, P-channel MOSFETs such as the BSS84 are naturally suited to high-side switching, where the load connects to ground and the switch sits between the positive supply and the load.
Key features include the 50 V drain-source breakdown rating, which provides generous margin on 12 V and 24 V rails; a low threshold voltage that allows direct drive from microcontroller GPIO pins in many low-voltage designs; and the matte-tin-plated, lead-free terminal finish compliant with solderability requirements. The device is designed to minimize RDS(ON) while maintaining superior switching performance, per the manufacturer datasheet.
Technologically, the BSS84 family uses a high-cell-density DMOS structure that reduces on-state resistance and enables fast switching transitions with low gate charge. The -W suffix denotes Diodes Incorporated tape-and-reel packaging at 3000 units per reel for automated pick-and-place assembly.
Typical applications include high-side load switches in battery-powered portable equipment, power-rail sequencing in microcontroller systems, low-power relay and LED driving, and signal-level switching in industrial control boards.
A key design consideration is thermal budget: at 300 mW maximum dissipation in free air, the effective RDS(ON) at low gate drive can dominate conduction losses, so verify actual gate-source voltage in the application.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für BSS84-7-F-W – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit BSS84-7-F-W (gleiche Bauform und Footprint) – abweichend in Package, Technology, Terminal Finish.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
BSS84-7-F
✅ Drop-In✓ Auf Lager
$0.019 / Stück
Datenblatt ansehen →BSS84-7
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BSS84LT1G
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BSS84PH6327XTSA2
✅ Drop-In✓ Auf Lager
$0.1 / Stück
Datenblatt ansehen →BSS84-7-F-W Grenzwerte & elektrische Eigenschaften
| Transistor Polarity | P-Channel |
| Channel Type | Enhancement Mode |
| Drain-Source Voltage (Vdss) | 50 V |
| Continuous Drain Current (Id) | 130 mA (Ta) |
| Power Dissipation (Pd) | 300 mW (Ta) |
| On-State Resistance RDS(on) | 10 Ohm (max, per Future Electronics listing) |
| Number of Channels | 1 |
| Gehäuse | SOT-23-3 |
| Montageart | Surface Mount |
| Terminal Finish | Matte Tin plated, solderable per MIL-STD-202 |
| Packaging | Tape & Reel (3K per reel, -W suffix) |
| RoHS-Status | Compliant |
| Technology | Si (silicon DMOS) |
BSS84-7-F-W Pin-Konfiguration
| Pin 1 | G — Gate - control terminal; pulling below source turns device on |
| Pin 2 | S — Source - connects to positive supply in high-side configurations |
| Pin 3 | D — Drain - connects to load in high-side configurations |
Typische Anwendungen
BSS84-7-F-W ist geeignet für 6 Anwendungs: High-Side Load Switching in Battery-Powered Devices, Power Rail Sequencing in Microcontroller Systems, Low-Power Relay and Actuator Driving, LED String and Indicator Driving, IoT Node and Sensor Power Gating, Automotive and Industrial 24 V Signal Switching.
High-Side Load Switching in Battery-Powered Devices
The BSS84-7-F-W excels as a high-side switch in battery-powered portable equipment because its P-channel polarity allows the source to sit directly on the battery rail while the gate is pulled low to enable power. With a 50 V drain-source rating, it tolerates inductive kick and transient overshoot on 3.7 V Li-ion, 9 V, and 12 V battery inputs with wide margin. The 130 mA continuous rating covers typical load currents for sensor nodes, wireless modules, and display backlights. Placed with the gate driven by an open-drain GPIO or a small NPN level shifter, the SOT-23-3 package minimizes board area. Its low threshold voltage ensures full enhancement even from 3.3 V logic rails, keeping conduction loss near 10 Ohm RDS(on) times load current squared.
Empfohlen
Power Rail Sequencing in Microcontroller Systems
In multi-rail embedded systems, the BSS84-7-F-W sequences power domains by gating I/O or core rails after the main supply stabilizes. Because it is a P-channel device, a simple resistor divider or RC delay on the gate creates a soft, delayed turn-on without an additional controller IC. The 50 V rating comfortably covers 24 V industrial rails used in PLC and factory automation boards, while the 130 mA capacity suits the light I/O banks of MCUs. The SOT-23-3 footprint allows one sequencer per rail at negligible cost, and tape-and-reel packaging supports high-volume automated assembly. Designers should size the gate resistor to control inrush and verify turn-on time against rail supervision requirements.
Empfohlen
Low-Power Relay and Actuator Driving
The BSS84-7-F-W drives small signal relays, solenoids, and dampers drawing under 130 mA from 12 V or 24 V supplies. As a high-side P-channel switch it keeps one relay terminal at ground potential, simplifying chassis-referenced load wiring in industrial control panels. The 50 V drain-source rating absorbs the inductive flyback when the relay coil de-energizes, though a freewheeling diode such as a BAS16-class device is still recommended for long-term reliability. The enhancement-mode DMOS structure provides fast switching with minimal gate charge, so direct logic-level control from a transistor or optocoupler output works well. Verify coil holding current stays within the 300 mW dissipation budget at the ambient temperature of the enclosure.
Empfohlen
LED String and Indicator Driving
The BSS84-7-F-W serves as a high-side switch for LED indicator strings and small backlight arrays on 12 V and 24 V systems. Its P-channel topology places the LED string between drain and ground, so the return path stays grounded and PWM dimming control references clean logic levels at the gate. The 130 mA current rating matches typical indicator and short backlight strings, and the 50 V rating tolerates the overshoot that PWM ringing can impose on long wiring runs. In SOT-23-3, one switch per LED channel enables per-channel dimming in status panels, appliance UIs, and machine indicators. Estimated: at 100 mA and 10 Ohm RDS(on), conduction dissipation is only about 0.1 W, well within the 300 mW limit.
Empfohlen
IoT Node and Sensor Power Gating
Battery-operated IoT sensor nodes use the BSS84-7-F-W to power-gate sensors and radios between measurement cycles, cutting standby current to microamp levels. The P-channel high-side placement fully disconnects the load from the battery, unlike low-side N-channel switching which leaves the load floating. The low gate threshold allows direct control from 1.8 V to 3.3 V microcontroller GPIOs through a pull-up to the battery rail. A large gate series resistor plus the gate capacitance creates a gentle RC ramp that limits inrush into sensor bulk capacitors. The SOT-23-3 package keeps the switching element within the node's tight board area, and the 50 V rating adds robustness against battery transients.
Empfohlen
Automotive and Industrial 24 V Signal Switching
On 24 V industrial buses, the BSS84-7-F-W switches low-current sensor excitation and status lines where its 50 V drain-source rating absorbs load-dump style transients that would destroy lower-voltage MOSFETs. Typical uses include switching 4-20 mA loop excitation, proximity sensor supply lines, and interlock signal routing in machine control. The matte-tin lead finish provides reliable solder joints in industrial assembly processes, and the tape-and-reel packaging suits automated production of control boards. Because gate drive levels of 12 V to 24 V fully enhance the channel, RDS(on) reaches its datasheet minimum, minimizing voltage drop in the signal path. Engineers should verify continuous current stays below 130 mA and derate dissipation inside sealed enclosures.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für BSS84-7-F-W – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | BSS84-7-F | BSS84-7 | BSS84LT1G | BSS84 |
|---|---|---|---|---|---|
| Package | SOT-23-3 | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | onsemi | onsemi |
| Drain-Source Voltage | 50 V | 50 V | 50 V | 50 V | 50 V |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Pinout (SOT-23) | G-S-D (1-2-3) | G-S-D (1-2-3) | G-S-D (1-2-3) | G-S-D (1-2-3) | G-S-D (1-2-3) |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant |
Wichtigste Unterscheidungsmerkmale
- Identical die with broader sourcing flexibility (vs. BSS84-7-F)
- Cross-brand second source with same pinout (vs. BSS84LT1G (onsemi))
- Single channel vs dual array trade-off (vs. BSS84DW-7-F)
Designhinweise
Estimated: at the full 130 mA continuous current and 10 Ohm maximum RDS(on), conduction dissipation is I^2 x R = 0.169 W, which is 56% of the 300 mW free-air limit and leaves modest margin. Above about 100 mA of continuous load, verify ambient temperature derating for the SOT-23-3 package, especially in sealed or high-ambient enclosures. If the gate is driven at only 2.5-3.3 V, actual RDS(on) will be higher than the fully-enhanced value, so recheck dissipation at your real Vgs.
Place a 100k to 1M pull-up resistor from gate to source so the BSS84-7-F-W defaults to OFF during microcontroller reset or floating-GPIO conditions - this prevents uncontrolled power-up of the switched rail. Keep the gate trace short to limit susceptibility to coupling, and add a small series resistor (100R to 1k) if the gate is driven from a logic pin with slow edges to damp ringing. The SOT-23-3 land pattern requires minimal copper, but connecting the drain and source pads to wider traces improves conduction cooling.
The most common error is assuming the BSS84 pinout matches other SOT-23 MOSFETs - it is Gate(1)-Source(2)-Drain(3); some families swap gate and drain. Second, remember that this is a P-channel device: it turns ON when the gate is pulled BELOW the source, the opposite logic of N-channel parts. Third, for inductive loads (relays, solenoids), always fit a flyback diode; the 50 V rating absorbs moderate kick but repeated avalanches degrade long-term reliability. Finally, verify Vgs max before connecting gate directly to higher-voltage rails.
Compliance-Informationen
RoHS compliant with matte-tin lead finish per MIL-STD-202 solderability standard per Diodes Incorporated and distributor data. REACH, halogen-free, and conflict minerals status not stated in provided data.
