FQP50N06 - 60V 50A N-Channel MOSFET TO-220 | onsemi
Teilenummer: FQP50N06 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.25 | $1,25 |
| 10 | $1.05 | $10,50 |
| 100 | $0.85 | $85,00 |
| 500 | $0.7 | $350,00 |
| 1.000 | $0.58 | $580,00 |
FQP50N06 Übersicht
An N-Channel MOSFET is a voltage-controlled semiconductor switch that turns on when a positive voltage is applied to the gate relative to the source. It sits within the broader taxonomy: MOSFET -> field-effect transistor -> discrete semiconductor -> power semiconductor. N-Channel devices are preferred over P-Channel in most high-current applications because they offer lower Rds(on) per unit silicon area, lower conduction losses, and higher transconductance for the same die size, making them the default choice for low-side switches, synchronous rectifiers, and motor drivers.
Key features include a 60V drain-source breakdown voltage (V(BR)DSS), 50A continuous drain current at Tc, 120W maximum power dissipation, fast switching speed, and avalanche energy rating. The TO-220-3 package provides excellent thermal dissipation with a tab that can be bolted to a heatsink for high-current applications, while the through-hole leads provide mechanical robustness for demanding environments.
The FQP50N06 utilizes DMOS (Double-Diffused Metal-Oxide Semiconductor) technology with a planar stripe cell layout, achieving an excellent trade-off between low on-resistance, high avalanche ruggedness, and fast switching. Its low gate charge (Qg typically 32 nC) and low input capacitance enable efficient high-frequency operation in switching power supply and motor drive topologies. The body diode supports inductive load switching.
Typical applications include DC-DC converters, motor drive circuits (H-bridge, half-bridge), solenoid and relay drivers, LED lighting drivers, power inverters, UPS systems, and audio amplifiers. In switching power supplies it is used as the main switching element or synchronous rectifier; in automotive applications it drives fuel injectors, lamps, and small motors; in audio amplifiers it serves as the output stage of Class D amplifiers and as a switch in protection circuits.
When designing with this device, ensure the gate drive voltage reaches at least 10V for full enhancement and minimum Rds(on). Add a gate-source pull-down resistor (10-100 kohm) to prevent inadvertent turn-on from dv/dt-induced gate charge. For switching frequencies above 50 kHz, use a dedicated gate driver IC rather than driving the gate directly from a logic output, and always include a snubber or TVS across the drain-source for inductive loads.
This page synthesizes distributor pricing, drop-in alternatives, application notes, and PCB design guidance that goes beyond the manufacturer datasheet to accelerate design-in decisions.
Drop-in-Alternativen für FQP50N06 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit FQP50N06 (gleiche Bauform und Footprint) – abweichend in Technology, Mounting Type, Package, Operating Temperature Range, Total Gate Charge (Qg).
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
RFP50N06
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
FQP50N06L
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRFZ44NSTRLPBF
✅ Drop-In✓ Auf Lager
$0.93 / Stück
Datenblatt ansehen →STP55NF06
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRF1010ESTRLPBF
✅ Drop-In✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →HUF75345P3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
FQP50N06 Grenzwerte & elektrische Eigenschaften
| Manufacturer | onsemi (formerly Fairchild Semiconductor) |
| Part Number | FQP50N06 |
| Transistortyp | N-Channel MOSFET |
| Technology | Planar Stripe DMOS |
| Drain-Source Voltage (V(BR)DSS) | 60 V |
| Continuous Drain Current (ID) at Tc | 50 A |
| Maximum Power Dissipation (PD) at Tc | 120 W |
| On-Resistance Rds(on) typical at VGS=10V | 0.022 ohm |
| Betriebstemperaturbereich | -55C to +175C (junction) |
| Gehäuse | TO-220-3 (through-hole) |
| Montageart | Through Hole |
| Channel Mode | Enhancement |
| RoHS-Status | Compliant |
| Lead-Free | Yes |
FQP50N06 Pin-Konfiguration
| Pin 1 | Gate — Gate control input (10V for full enhancement) |
| Pin 2 | Drain — Drain connection (also tied to metal tab) |
| Pin 3 | Source — Source connection |
Sicherer Arbeitsbereich (DC)
Typische Anwendungen
FQP50N06 ist geeignet für 6 Anwendungs: 24V/36V DC-DC Converter Switching Element, DC Motor Drive (H-Bridge / Half-Bridge), Automotive Load Switch (Lighting, Solenoid, Injector), Class D Audio Amplifier Output Stage, Solar Charge Controller / MPPT Switch, Uninterruptible Power Supply (UPS) Battery Switch.
24V/36V DC-DC Converter Switching Element
The FQP50N06 is widely deployed as the main high-side or low-side switch in 24V and 36V bus DC-DC converters, including buck, boost, and buck-boost topologies. Its 60V V(BR)DSS provides comfortable headroom for 36V rectified bus systems, while the 0.022 ohm typical Rds(on) at VGS=10V keeps conduction losses under 2W at 30A load (P=I^2*R=900*0.022=19.8W at 30A). The 50A continuous current rating supports 600-1500W converter designs, and its low gate charge enables efficient switching at 100-300 kHz when driven by a dedicated gate driver such as the UCC27211. The TO-220-3 package with bolted heatsink handles the typical 20-40W dissipation in continuous conduction mode without thermal shutdown. Compared to a 100V-rated MOSFET, the FQP50N06 offers ~30% lower Rds(on) per dollar at the cost of reduced voltage margin.
Empfohlen
DC Motor Drive (H-Bridge / Half-Bridge)
In brushed DC motor drive circuits, the FQP50N06 serves as the low-side switch in half-bridge configurations or as all four switches in H-bridge bidirectional drives. Its 50A continuous current rating supports motors up to ~3HP at 24V, and its low Rds(on) minimizes conduction losses that would otherwise heat the bridge. The TO-220-3 package makes it easy to mount four devices on a single aluminum heatsink, with proper isolation washers for the high-side transistors. The body diode provides a freewheeling path for inductive kickback, though adding external Schottky diodes reduces switching losses in PWM applications above 10 kHz. Gate drive can be provided directly from a 10V logic-level MCU pin or via a dedicated driver like the IR2104 for higher switching frequencies.
Empfohlen
Automotive Load Switch (Lighting, Solenoid, Injector)
The FQP50N06 is well suited for switching automotive 12V and 24V loads including headlamps, fog lights, solenoids, fuel injectors, and HVAC blower motors. Its 60V breakdown comfortably absorbs automotive load-dump transients (typically 35-40V peak), and the 50A rating covers most lighting and motor loads. The TO-220-3 package with bolted heatsink handles the thermal dissipation of continuous high-current loads (e.g., 100W headlamp = 8.3A continuous). For PWM dimming at 100-500 Hz, the fast switching speed of DMOS technology eliminates audible flicker. Note that AEC-Q101 automotive qualification is NOT standard for this part - for OEM automotive designs requiring full automotive qualification, use the NVMFS series or other AEC-Q101 qualified MOSFETs.
Empfohlen
Class D Audio Amplifier Output Stage
The FQP50N06 is commonly used in the output stage of Class D audio amplifiers and as a switch in subwoofer plate amplifiers. Its low Rds(on) of 0.022 ohm minimizes the I^2*R losses in the PWM output stage, directly improving amplifier efficiency and reducing heatsink size. The fast switching speed (turn-off times in the 30-50 ns range) supports 250-500 kHz PWM carrier frequencies typical of modern Class D designs. The 60V breakdown handles +/- 25V supply rails for amplifiers delivering 200-500W into 4 ohm loads. The TO-220-3 package is easy to mount on the chassis as a heatsink. The body diode is acceptable for audio frequencies; for higher efficiency add external Schottky diodes in parallel.
Empfohlen
Solar Charge Controller / MPPT Switch
In solar charge controller circuits (PWM and MPPT topologies), the FQP50N06 functions as the main buck switch or synchronous rectifier handling 30A to 50A of panel current. Its 60V rating covers 24V nominal panel open-circuit voltages (Voc up to 44V for 24V systems) with safety margin. The low Rds(on) reduces conduction losses that would otherwise waste harvested solar energy. In MPPT buck topologies, the FQP50N06 can switch at 50-100 kHz when driven by a controller like the LT3741 or SPV1020. The TO-220-3 package is convenient for hand-built or low-volume solar charge controllers. For PWM-only controllers, a single FQP50N06 with heatsink handles 30-40A panel current reliably.
Empfohlen
Uninterruptible Power Supply (UPS) Battery Switch
The FQP50N06 is deployed as the battery disconnect switch and inverter switch in low-to-medium power UPS systems (300VA to 1500VA). In battery disconnect circuits, its 60V rating covers 48V battery stacks, and the 50A rating handles 1500W inverter loads with safety margin. The low Rds(on) reduces voltage drop across the disconnect switch, preserving battery run-time during power outages. In the inverter stage, multiple FQP50N06 devices in a full-bridge configuration generate 120V/230V AC from 12V/24V/48V DC bus. Fast switching enables 50-60 Hz sine wave PWM generation with low harmonic distortion. The TO-220-3 package allows reliable heatsink mounting for the continuous conduction duty cycle of UPS inverters.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für FQP50N06 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | RFP50N06 | FQP50N06L | IRFZ44N | STP55NF06 | IRF1010ESTRLPBF | HUF75345P3 |
|---|---|---|---|---|---|---|---|
| Brand | onsemi (formerly Fairchild) | onsemi | onsemi | Infineon | STMicroelectronics | Infineon | onsemi |
| Package | TO-220-3 | TO-220-3 (same) | TO-220-3 (same) | TO-220-3 (same) | TO-220-3 (same) | TO-220-3 (same) | TO-220-3 (same) |
| Drain-Source Voltage (V(BR)DSS) | 60 V | 60 V | 60 V | 55 V | 60 V | 60 V | 55 V |
| Continuous Drain Current (ID) | 50 A | 50 A | 50 A | 49 A | 50 A | 84 A | 75 A |
| Rds(on) typical at VGS=10V | 0.022 ohm | 0.022 ohm | 0.022 ohm | 0.0175 ohm | 0.018 ohm | 0.012 ohm | 0.007 ohm |
| Power Dissipation (PD) at Tc | 120 W | 120 W | 120 W | 94 W | 120 W | 130 W | 200 W |
| Technology | Planar Stripe DMOS | DMOS | DMOS | HEXFET | STripFET | HEXFET | UltraFET |
| Pinout (TO-220 G-D-S) | Yes (standard) | Yes | Yes | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- Industry-standard TO-220-3 with broadest cross-brand compatibility (vs. IRFZ44N)
- Lower conduction loss vs lower-current alternatives (vs. IRFZ44N)
- Lower cost per ampere vs higher-current alternatives (vs. IRF1010ESTRLPBF)
Designhinweise
The FQP50N06 in TO-220-3 has a junction-to-case thermal resistance (theta_JC) of approximately 1.0 C/W and junction-to-ambient (theta_JA) of 62 C/W without heatsink. At 50A continuous with 0.022 ohm Rds(on) the conduction loss is 55W, requiring substantial heatsinking. Estimated: with 1 square inch of copper PCB area as heatsink, theta_JA drops to ~40 C/W; junction temperature rise above 25C ambient at 55W dissipation is 55W * 40 C/W = 2200C - well above the 175C maximum. A proper extruded aluminum heatsink with thermal resistance below 2 C/W is mandatory for full 50A continuous operation. Always use thermal interface material (thermal pad or paste) between the TO-220 tab and the heatsink.
For switching applications above 50 kHz, minimize parasitic inductance in the high-current loop by keeping the drain and source traces short and wide. Place the gate drive resistor (typically 10-100 ohm) close to the gate pin to dampen ringing caused by gate-source capacitance and trace inductance. Use a star-ground topology where the source lead returns directly to the power supply ground rather than sharing a path with the gate drive circuit. A 10 kohm pull-down resistor between gate and source prevents inadvertent turn-on from dv/dt-induced gate charge during drain transitions, which is critical in half-bridge and H-bridge configurations.
Do not exceed the gate-source voltage rating (typically +/- 20V for the FQP50N06); over-voltage on the gate destroys the thin gate oxide. Add a 12V Zener diode between gate and source for protection against gate driver faults or ESD. For inductive loads (relays, solenoids, motors), always include a flyback diode or TVS across the drain-source, or use the body diode with a snubber. Do not operate the device in linear mode (partially enhanced) for extended periods - the high Rds(on) in the linear region can quickly exceed thermal limits. Verify SOA before paralleling multiple FQP50N06 devices; matched Rds(on) and shared heatsink are required for balanced current sharing.
Compliance-Informationen
RoHS compliant and lead-free per onsemi product page. Not AEC-Q100/AEC-Q101 qualified; for automotive OEM designs use AEC-Q101 qualified alternatives such as NVMFS5C612NL.
