IKB30N65EH5ATMA1 - 650V 30A TRENCHSTOP 5 IGBT, D2Pak | Infineon
Teilenummer: IKB30N65EH5ATMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $3.45 | $3,45 |
| 10 | $3.1 | $31,00 |
| 100 | $2.75 | $275,00 |
| 500 | $2.42 | $1.210,00 |
| 1.000 | $2.18 | $2.180,00 |
IKB30N65EH5ATMA1 Übersicht
What is an IGBT? An Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor that combines the high input impedance and fast switching of a MOSFET with the low conduction loss of a bipolar transistor. It belongs to the power semiconductor family, sitting between MOSFETs (used at lower voltages and higher frequencies) and thyristors (used at very high currents). IGBTs are the workhorse devices in modern power electronics for voltages from 600 V to 6.5 kV, bridging the MOSFET and thyristor hypernyms and forming part of the broader semiconductor taxonomy.
Key features of the IKB30N65EH5ATMA1 include low VCE(sat) for reduced conduction loss, soft switching behavior that minimizes EMI, integrated anti-parallel diode for half-bridge simplicity, and a wide operating temperature range of -40C to +175C. The TRENCHSTOP 5 thin-wafer technology reduces both turn-on and turn-off losses, enabling higher switching frequencies and smaller magnetics in the overall converter design.
Architecturally, the device uses Infineon's fifth-generation trench field-stop cell with an optimized emitter structure, providing a tight trade-off between VCE(sat) and Eoff. The co-packaged RAPID 1 diode eliminates the need for an external anti-parallel diode in half-bridge and inverter legs, simplifying PCB layout and reducing parasitic inductance that can otherwise cause voltage overshoot during diode reverse recovery.
Typical applications include uninterruptible power supplies (UPS), solar inverters, welding equipment, industrial motor drives, and power factor correction (PFC) stages. The 650 V blocking voltage comfortably supports 400 V rectified mains and 480 V industrial bus systems with adequate derating margin.
When designing with this part, ensure the gate driver can supply the recommended +15 V / -8 V gate drive and that the PCB layout minimizes stray inductance in the power loop to avoid over-voltage spikes during switching. Thermal management must account for up to 188 W dissipation in the D2Pak package, which typically requires a substantial copper pad area or external heatsink.
Drop-in-Alternativen für IKB30N65EH5ATMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
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IKB30N65EH5ATMA1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies |
| Technology | TRENCHSTOP 5 Trench Field Stop IGBT |
| Collector-Emitter Voltage (VCES) | 650 V |
| Continuous Collector Current (IC, TC=25C) | 55 A |
| Maximum Power Dissipation (Ptot) | 188 W |
| Gate-Emitter Voltage (VGES) | +/-20 V |
| Anti-Parallel Diode | Yes - RAPID 1 co-packed |
| Betriebstemperaturbereich | -40C to +175C |
| Gehäuse | PG-TO263-3 (D2Pak) |
| Montageart | Surface Mount |
| Switching Speed | High speed switching |
| RoHS-Status | Compliant |
IKB30N65EH5ATMA1 Pin-Konfiguration
| Pin 1 | Gate — Gate control input (drives the IGBT channel) |
| Pin 2 | Collector — Main current terminal (also connected to the metal tab) |
| Pin 3 | Emitter — Return terminal for collector current and gate drive reference |
| Pin Tab | Collector — Collector tab - electrically common with Pin 2, also serves as thermal pad |
Forward Bias Sicherer Arbeitsbereich
Typische Anwendungen
IKB30N65EH5ATMA1 ist geeignet für 6 Anwendungs: Uninterruptible Power Supplies (UPS), Solar Inverters, Industrial Motor Drives, Power Factor Correction (PFC) Stages, Welding Equipment, Induction Heating Cooktops.
Uninterruptible Power Supplies (UPS)
The IKB30N65EH5ATMA1 fits UPS inverter stages where 650 V blocking comfortably supports 400 V rectified mains with margin. Its TRENCHSTOP 5 trench field-stop technology delivers VCE(sat) around 1.45 V at 30 A, reducing conduction loss in continuous inverter operation. The co-packed RAPID 1 diode simplifies the half-bridge layout and keeps reverse-recovery losses low at switching frequencies of 15-25 kHz typical for double-conversion UPS topologies. The D2Pak package's exposed thermal pad allows direct PCB copper heatsinking, which is critical in the compact 1U-2U form factors common in modern online UPS systems.
Empfohlen
Solar Inverters
In string and central solar inverters, the IKB30N65EH5ATMA1's 650 V rating handles 600 V DC input buses with safety margin for transient over-voltages. The 188 W power dissipation capability supports continuous 30 A operation in the IGBT inverter stage, while the high-speed switching characteristic enables 16-20 kHz PWM operation that keeps output filter inductors small. The integrated RAPID 1 diode eliminates the need for an external diode in the half-bridge leg, reducing BOM cost and PCB area in residential and small-commercial inverter designs where compactness is a selling point.
Empfohlen
Industrial Motor Drives
Variable-frequency drives for 3-phase induction and PMSM motors benefit from the IKB30N65EH5ATMA1's 650 V VCES and 30 A continuous current rating, which covers motors up to approximately 7.5 kW at 400 V. The TRENCHSTOP 5 cell structure provides low Eoff losses that reduce switching loss at 8-15 kHz PWM, the typical operating frequency for industrial drives. The co-packaged diode handles the freewheeling current during motor regeneration, and the D2Pak package's surface-mount construction supports automated assembly for high-volume drive production.
Empfohlen
Power Factor Correction (PFC) Stages
The IKB30N65EH5ATMA1 is well-suited for bridgeless PFC topologies where two switching positions replace the diode bridge plus boost switch. Its 650 V breakdown and 30 A continuous current match the typical current stress in a 3-5 kW PFC stage operating from 230 V AC mains. The integrated anti-parallel diode eliminates the need for an external diode in totem-pole PFC designs, which is the key simplification that bridgeless PFC offers over conventional boost PFC. Low VCE(sat) at 30 A keeps conduction losses manageable even at the high-line input where duty cycle compresses.
Empfohlen
Welding Equipment
Inverter-based welding machines, the IKB30N65EH5ATMA1's 650 V rating and 30 A continuous current support the primary-side switching of the welding transformer in 200-300 A class MMA/MIG welders. The high peak current handling and 188 W dissipation are critical for the demanding thermal cycling of welding inverters. The integrated RAPID 1 diode simplifies the full-bridge or push-pull primary configuration, while the surface-mount D2Pak package reduces mechanical stress from vibration compared to through-hole alternatives in portable welding equipment.
Empfohlen
Induction Heating Cooktops
Resonant half-bridge induction cooktop designs operating at 20-50 kHz benefit from the IKB30N65EH5ATMA1's high-speed switching and integrated freewheeling diode. The 650 V VCES safely handles the resonant tank overshoot common in quasi-resonant ZVS topologies, while the 30 A continuous rating covers cooktops up to approximately 3.5 kW. The D2Pak package's compact footprint and exposed thermal pad enable the slim cooktop form factor required by modern kitchen appliance designs, where board height under the glass surface is severely constrained.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IKB30N65EH5ATMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IKB30N65EH5 | IKW30N65EH5 | IKB40N65EH5 | STGB30M65DF2 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics |
| Package | PG-TO263-3 (D2Pak) | PG-TO263-3 (D2Pak) - same | TO-247 (different mount) | PG-TO263-3 (D2Pak) - same | PG-TO263-3 (D2Pak) - same |
| Collector-Emitter Voltage (VCES) | 650 V | 650 V | 650 V | 650 V | 650 V |
| Continuous Collector Current | 30 A | 30 A | 30 A | 40 A | 30 A |
| Anti-Parallel Diode | Yes - RAPID 1 | Yes - RAPID 1 | Yes - RAPID 1 | Yes - RAPID 1 | Yes |
| Technology Generation | TRENCHSTOP 5 | TRENCHSTOP 5 | TRENCHSTOP 5 | TRENCHSTOP 5 | STMicro MDmesh |
| Operating Temperature | -40C to +175C | -40C to +175C | -40C to +175C | -40C to +175C | -55C to +175C |
| Mounting Type | Surface Mount | Surface Mount | Through-Hole | Surface Mount | Surface Mount |
Wichtigste Unterscheidungsmerkmale
- TRENCHSTOP 5 thin-wafer technology delivers best-in-class VCE(sat)/Eoff trade-off (vs. STGB30M65DF2)
- Higher continuous current rating within same D2Pak footprint (vs. IKB30N65EH5)
- Co-packaged RAPID 1 anti-parallel diode eliminates external diode BOM (vs. Discrete IGBT plus external diode solution)
Designhinweise
Estimated: with VCE(sat) ~1.45 V at 30 A, conduction loss is approximately 43.5 W per IGBT at full continuous load. With switching losses adding 10-15 W at 20 kHz, total dissipation reaches 55-60 W per device in a half-bridge. The D2Pak package thermal resistance is approximately 0.6 C/W junction-to-case, so the heatsink must keep case temperature below 100 C to maintain junction below 150 C with adequate margin.
Recommended: place the IKB30N65EH5ATMA1 on a minimum 1 square inch (645 mm^2) of 2 oz copper on a multilayer PCB to achieve the rated 188 W power dissipation. Use multiple thermal vias (0.3 mm drill, 0.1 mm plating) directly under the D2Pak tab to connect top copper to inner copper planes. Gate-drive traces must be kept short (< 30 mm) and routed away from the drain/collector switching node to minimize Miller coupling.
Critical: the IKB30N65EH5ATMA1 must be driven with negative gate voltage (-8 V to -15 V) during turn-off in half-bridge configurations to prevent Miller-effect induced parasitic turn-on, which can cause shoot-through and catastrophic failure. Single-supply gate drivers with 0 V off are NOT recommended for this part. Additionally, ensure the DC-link bus voltage never exceeds 650 V including switching overshoot - add a snubber or TVS clamp if the bus can transient above 600 V under load steps.
Recommended: minimize the commutation loop inductance between the IGBT, the co-packed diode, and the DC-link capacitors. Use a Kelvin connection for the gate-emitter drive, bringing the emitter return trace directly from the IGBT emitter pin to the gate driver ground rather than sharing the power path. This reduces ringing on Vge during switching transitions and prevents gate-voltage overshoot that can exceed the +/-20 V VGE maximum rating.
Compliance-Informationen
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified (industrial-grade IGBT, automotive variants available as IKB30N65EH5ATMA1-AQD or similar). Lead-free reflow compatible with MSL2 moisture sensitivity.
