IRF1010NSTRLPBF - 55V 85A N-Channel MOSFET D2PAK | Infineon
Teilenummer: IRF1010NSTRLPBF ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.74 | $0,74 |
| 10 | $0.66 | $6,60 |
| 100 | $0.56 | $56,00 |
| 500 | $0.48 | $240,00 |
| 1.000 | $0.42 | $420,00 |
IRF1010NSTRLPBF Übersicht
A power MOSFET is a voltage-controlled semiconductor switch used inside power management systems to regulate, convert, and route electrical energy. Within the component hierarchy, the IRF1010NSTRLPBF belongs to the discrete transistor family, specifically the single N-channel MOSFET group under discrete semiconductors, and serves as the switching or rectifying element in DC-DC converters, motor drives, and load-switch circuits.
Key features include the 55 V Vdss rating suitable for 12 V and 24 V bus systems, the very low 11 mOhm rDS(on) that minimizes conduction losses at high current, and a 175 C maximum junction temperature rating that supports demanding thermal environments. The device offers fast switching speed, low gate charge typical of the IRF1010 family (approximately 80 nC), and avalanche energy capability for robust operation in inductive switching circuits.
Technically, the device uses the HEXFET cell architecture with an advanced process that reduces on-resistance per silicon area, allowing a D2PAK footprint to handle tens of amperes when the drain tab is soldered to a adequately sized copper pour. Gate drive at 10 V achieves full enhancement; logic-level drive is not specified, so a proper gate driver or totem-pole stage is recommended for PWM converters.
Typical applications include synchronous rectification in high-output server and telecom DC-DC converters, motor control bridges in power tools and robotics, battery protection and load switches in 12 V and 24 V industrial systems, and switching regulators in welding and lighting equipment.
Design consideration: at high continuous currents, conduction loss (I^2 x rDS(on)) dominates; for example, estimated dissipation at 30 A is about 9.9 W, so PCB thermal design with generous drain-tab copper is essential.
This page synthesizes distributor pricing, drop-in alternatives, pinout data, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für IRF1010NSTRLPBF – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IRF1010NS
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRF1010NSTRLPBF-Q
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IRFZ44NSPBF
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IRF1010NSTRLPBF Grenzwerte & elektrische Eigenschaften
| Transistor Polarity | N-Channel |
| Operating Mode | Enhancement |
| Drain-Source Voltage Vdss | 55 V |
| Continuous Drain Current Id | 85 A (Tc) |
| Power Dissipation Pd | 180 W (Tc) |
| Drain-Source On-Resistance rDS(on) max | 0.011 ohm (11 mOhm) |
| rDS(on) at 10 V (alternate listing) | 0.014 ohm |
| Gate-Source Voltage Vgs max | ±20 V |
| Total Gate Charge Qg | 80 nC (typical, family data) |
| Maximum Junction Temperature | 175 C |
| Gehäuse | D2PAK (TO-263AB), 3-pin (2+tab), Surface Mount |
| Montageart | Surface Mount |
| Number of Units | 1 |
| Packaging | Tape & Reel (TR) |
| RoHS-Status | Compliant (PBF = Pb-free) |
| Technology | Advanced Process Technology (HEXFET) |
| Configuration | Single MOSFET |
IRF1010NSTRLPBF Pin-Konfiguration
| Pin 1 | Gate — Gate control input |
| Pin 2 | Drain — Drain, connected to metal tab for heat dissipation |
| Pin 3 | Source — Source terminal |
Sicherer Arbeitsbereich (D2PAK, Tc = 25 C)
Typische Anwendungen
IRF1010NSTRLPBF ist geeignet für 6 Anwendungs: Synchronous Rectification in DC-DC Converters, Motor Control and H-Bridge Drives, Battery Protection and Load Switching, Switching Power Supplies and Inverters, LED Lighting and Lighting Ballast Drivers, Welding and Industrial Heating Equipment.
Synchronous Rectification in DC-DC Converters
The IRF1010NSTRLPBF's 11 mOhm rDS(on) and 85 A (Tc) current rating make it well suited as the synchronous rectifier in high-output server and telecom DC-DC converters operating from 12 V intermediate buses. Its 55 V breakdown provides robust margin against switching-node voltage spikes caused by transformer leakage inductance. In this role, the MOSFET replaces a Schottky diode, and conduction loss scales with I^2 x rDS(on), so the low on-resistance directly raises converter efficiency at tens of amperes output. With a 10 V gate drive the channel is fully enhanced, and the approximately 80 nC typical gate charge supports PWM switching in the 100 to 300 kHz range typical of brick converters. The D2PAK drain tab must be soldered to a substantial copper pour; estimated dissipation at 30 A is about 9.9 W, so thermal vias and inner-plane copper are mandatory to hold junction temperature below the 175 C maximum.
Empfohlen
Motor Control and H-Bridge Drives
In DC motor drives, power tools, robotics, and small vehicle controllers running from 12 V or 24 V batteries, the IRF1010NSTRLPBF serves as the switching element in half-bridge and H-bridge topologies. Its 55 V rating covers battery transients and inductive kickback when combined with freewheeling paths, while the 11 mOhm on-resistance limits conduction heating during stalled-rotor or high-torque conditions where currents can exceed 40 A. The device's avalanche capability adds robustness against unclamped inductive switching events from motor windings. Because PWM motor drives switch at 20 kHz or above, gate-drive design matters: use a dedicated gate driver to supply the charge for the approximately 80 nC gate quickly, minimizing switching loss. The surface-mount D2PAK suits automated assembly of controller boards, with the drain tab doubling as the bridge supply node on a copper pour for heat extraction.
Empfohlen
Battery Protection and Load Switching
For 12 V and 24 V battery systems in industrial equipment, inverters, and uninterruptible power supplies, the IRF1010NSTRLPBF works as a series load switch or reverse-polarity protection element. The 55 V Vdss tolerates load-dump-style transients common in vehicle and telecom battery rails, and the 11 mOhm rDS(on) keeps the voltage drop low: estimated at 20 A the drop is only 0.22 V, dissipating about 4.4 W. Low drop is essential in battery-powered systems to preserve runtime and prevent switch overheating. The enhancement-mode N-channel structure is placed in the low side or as a high-side switch with a driver; body-diode orientation must be checked for reverse-current blocking applications. Surface-mount D2PAK construction supports automated assembly of protection boards, and the 175 C junction rating tolerates hot enclosures, provided PCB copper around the drain tab is sized for continuous load current.
Empfohlen
Switching Power Supplies and Inverters
General-purpose switching power supplies, welding equipment, and low-frequency inverters benefit from the IRF1010NSTRLPBF's combination of 55 V blocking voltage, high current capability, and fast switching. In push-pull and forward converter primary sides fed from rectified 24 V or 28 V rails, the 55 V rating provides the required margin for reflected voltages and ringing. The Advanced Process Technology die switches quickly, keeping transition losses low when the gate is driven from a proper driver with adequate peak current. The approximately 80 nC gate charge is moderate, permitting switching frequencies up to a few hundred kilohertz with acceptable drive loss (Qg x Vgs x f). Designers should minimize gate-loop inductance and add a small gate resistor to control ringing, and must ensure the drain tab copper can remove conduction heat during continuous full-load operation, using thermal vias to spread heat into inner PCB layers.
Empfohlen
LED Lighting and Lighting Ballast Drivers
High-current LED lighting systems, HID ballasts, and industrial luminaires driven from 12 V or 24 V supplies use the IRF1010NSTRLPBF as the PWM dimming or current-chopping switch. LED strings at tens of amperes demand very low switch drop to preserve efficiency; the 11 mOhm rDS(on) yields an estimated 0.44 V drop at 40 A, dissipating about 17.6 W, so parallel operation or pulsed PWM duty cycles below 100% are common thermal strategies. The device's fast switching enables PWM dimming at several kilohertz without visible flicker, and its 55 V rating covers inductive wiring transients from long cable runs. In ballast topologies the 175 C junction rating and avalanche robustness tolerate repeated inductive switching. Board designers should place the MOSFET drain tab on a dedicated thermal pour and verify dimming-frequency switching loss stays within the D2PAK's PCB-dependent power handling capability.
Empfohlen
Welding and Industrial Heating Equipment
Inverter-based welding machines, induction heaters, and resistance-heating controllers switch large currents through MOSFET arrays, and the IRF1010NSTRLPBF is a proven choice for the low-voltage secondary stages of these machines. Multiple D2PAK devices in parallel share current; the positive temperature coefficient of rDS(on) aids current balancing between paralleled dice. The 55 V rating suits rectified single-phase or 48 V bus-fed secondary bridges, while the 11 mOhm on-resistance keeps duty-cycle-average conduction loss manageable: at a 100 A shared stage across six devices (about 16.7 A each), estimated per-device dissipation is roughly 3 W at 100% duty. Robust avalanche energy capability absorbs transformer leakage spikes, and the 175 C junction rating accommodates the harsh thermal environments typical of welding enclosures. Strict gate-drive symmetry and individual gate resistors are essential when paralleling to prevent high-frequency oscillation.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IRF1010NSTRLPBF – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IRF1010NS | IRF1010NSTRLPBF-Q | IRFZ44NSPBF |
|---|---|---|---|---|
| Package | D2PAK (TO-263AB) | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Vdss | 55 V | 55 V | 55 V | 55 V |
| Continuous Drain Current | 85 A (Tc) | 84 A | 85 A (Tc) | 47 A (Tc) |
Wichtigste Unterscheidungsmerkmale
- Highest current grade in the 55 V IRF10xx family (vs. IRFZ44NSPBF)
- Surface-mount D2PAK enables automated assembly (vs. IRF1010N (TO-220AB))
- Trade-off: not logic-level (vs. IRFZ44NSPBF)
Designhinweise
The D2PAK package relies entirely on PCB copper for cooling. Estimated: at 30 A continuous with 11 mOhm rDS(on), dissipation is about 9.9 W, so allocate at least 1 square inch of 2 oz copper under the drain tab and add an array of thermal vias to inner planes. Compute junction temperature as Tj = Ta + P x (theta_JC + theta_pcb); theta_JC for D2PAK is typically well under 1 C/W, but the PCB path dominates. Confirm final theta_JA against the manufacturer datasheet thermal table for your board stack-up.
Gate-loop inductance causes ringing and potential spurious turn-on in high-current switching. Place the gate driver close to the gate pin, use a dedicated gate resistor (typically 5 to 20 ohm) for damping, and route the gate track away from the drain node to reduce Miller coupling. In parallel arrays, give each MOSFET its own gate resistor to suppress parasitic oscillation between gates. Keep the source-kelvin return path separate from the power source path where layout allows.
Do not exceed the ±20 V gate-source rating during driver transients; clamp or select drivers with regulated gate output. Note that this is not a logic-level part - drive with 10 V for the specified 11 mOhm rDS(on); at reduced Vgs the resistance rises significantly. Confirm the full MPN includes 'PBF' for lead-free stock, and derate current with case temperature above 25 C per the datasheet transfer curve. The tab is at drain potential - respect creepage to grounded heatsinks.
Compliance-Informationen
The PBF suffix indicates a lead-free, RoHS-compliant product per Infineon/International Rectifier green-product policy. REACH, halogen-free, and conflict-minerals status not stated in provided data.
