K6X1008C2D-BF70 - 128Kx8 70ns Low Power CMOS SRAM | Samsung
Teilenummer: K6X1008C2D-BF70 ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.4 | $24,00 |
| 100 | $1.92 | $192,00 |
| 500 | $1.55 | $775,00 |
| 1.000 | $1.28 | $1.280,00 |
K6X1008C2D-BF70 Übersicht
An SRAM (Static Random Access Memory) is a type of volatile semiconductor memory that stores each data bit in a bistable flip-flop cell made of cross-coupled CMOS inverters. Unlike DRAM, SRAM does not require periodic refresh, which simplifies system design and yields deterministic, very low-latency read/write cycles. SRAM is hierarchically positioned as volatile memory, sibling to DRAM and flip-flop based register files, and is typically used for caches, look-up tables, FIFOs, and boot/parameter storage in embedded systems.
Key features of the K6X1008C2D-BF70 include 70 ns access time, fully static operation (no clock or refresh required), TTL-compatible I/O, low standby current, and three-state outputs for bus-sharing. The BF70 suffix denotes the 70 ns speed grade in the 32-SOP-525 commercial package with lead-free finish. Operating current (ICC) and CMOS standby current (ICC2) are characterized per the Samsung datasheet revision history.
The device uses a six-transistor CMOS memory cell array with conventional address-decoded word-line drivers and sense amplifiers. The asynchronous interface provides a Chip Enable (CE), Write Enable (WE), and Output Enable (OE) control set, allowing the part to drop into industry-standard 128Kx8 SRAM sockets with no firmware changes.
Typical applications include data storage in industrial controllers, firmware/parameter boot storage in embedded modules, data logging buffers, computing subsystems, replacement sourcing for legacy 128Kx8 SRAM, and telecommunications equipment. The 32-SOP footprint is convenient for board-level upgrades and last-time-buys.
When designing with this part, derate access time budget for temperature and supply variation; place a 0.1 uF decoupling capacitor close to VCC and consider a bulk 1 uF to support read/write peaks. Confirm pinout against the BF70 variant SOP outline (32-SOP-525) rather than the TSOP1 reverse option, because the SOP and TSOP1 pin assignments are not identical.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in a single manufacturer datasheet view.
Drop-in-Alternativen für K6X1008C2D-BF70 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K6X1008C2D-BF70 (gleiche Bauform und Footprint) – abweichend in Memory Type, Access Time, Memory Organization, Package, Process Technology.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K6X1008C2D-BF55
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$1.18 / Stück
Datenblatt ansehen →K6X1008C2D-BF55L
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
K6X1008C2D-GF70
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$1.3 / Stück
Datenblatt ansehen →K6X1008C2D-BF70 Grenzwerte & elektrische Eigenschaften
| Speichertyp | Volatile SRAM (asynchronous, static) |
| Memory Organization | 128K x 8 (1 Mbit total) |
| Number of Words | 131,072 |
| Bits per Word | 8 |
| Access Time | 70 ns |
| Schnittstellentyp | Parallel, asynchronous |
| I/O Compatibility | TTL-compatible |
| Operating Mode | Fully static (no clock, no refresh) |
| Package Type | 32-SOP-525 (PDSO32) |
| Speed Grade Suffix | BF70 (= 70 ns) |
| Output Enable (OE) Pin | Yes (three-state outputs) |
| Write Enable (WE) Pin | Yes |
| Chip Enable (CE) Pin | Yes |
| Lead-Free Finish | Yes (per datasheet revision history) |
| Montageart | Surface Mount |
| Process Technology | Low-power CMOS |
K6X1008C2D-BF70 Pin-Konfiguration
| Pin 1 | A14 — Address input 14 |
| Pin 2 | A12 — Address input 12 |
| Pin 3 | A7 — Address input 7 |
| Pin 4 | A6 — Address input 6 |
| Pin 5 | A5 — Address input 5 |
| Pin 6 | A4 — Address input 4 |
| Pin 7 | A3 — Address input 3 |
| Pin 8 | A2 — Address input 2 |
| Pin 9 | A1 — Address input 1 |
| Pin 10 | A0 — Address input 0 |
| Pin 11 | I/O1 — Data input/output 1 |
| Pin 12 | I/O2 — Data input/output 2 |
| Pin 13 | I/O3 — Data input/output 3 |
| Pin 14 | VSS — Ground |
| Pin 15 | I/O4 — Data input/output 4 |
| Pin 16 | I/O5 — Data input/output 5 |
| Pin 17 | I/O6 — Data input/output 6 |
| Pin 18 | I/O7 — Data input/output 7 |
| Pin 19 | I/O8 — Data input/output 8 |
| Pin 20 | CE — Chip Enable (active low) |
| Pin 21 | A10 — Address input 10 |
| Pin 22 | OE — Output Enable (active low) |
| Pin 23 | A11 — Address input 11 |
| Pin 24 | A9 — Address input 9 |
| Pin 25 | A8 — Address input 8 |
| Pin 26 | A13 — Address input 13 |
| Pin 27 | WE — Write Enable (active low) |
| Pin 28 | VCC — Power supply (+5 V) |
| Pin 29 | A16 — Address input 16 |
| Pin 30 | A15 — Address input 15 |
| Pin 31 | NC — Not connected (per datasheet) |
| Pin 32 | NC — Not connected (per datasheet) |
Typische Anwendungen
K6X1008C2D-BF70 ist geeignet für 7 Anwendungs: Industrial Controller Parameter Storage, Embedded Boot / Firmware Shadow Memory, Data Acquisition FIFO Buffer, Telecommunications Equipment Memory, Automotive Electronics Aftermarket / Repair, Legacy Computing Module Replacement, Test & Measurement Calibration Tables.
Industrial Controller Parameter Storage
The K6X1008C2D-BF70's 128Kx8 organization and 70 ns access time fit industrial PLCs and controllers that need non-volatile-shadow parameter storage backed by SRAM. With a 32-SOP footprint, it drops onto legacy 5 V PLC peripheral boards without rework, while its asynchronous, fully-static interface avoids the refresh controller required by DRAM and simplifies the MCU bus logic.
Empfohlen
Embedded Boot / Firmware Shadow Memory
Use the K6X1008C2D-BF70 as a 5 V boot or shadow memory for 8-bit and 16-bit microcontrollers that lack internal flash or need cached execution from SRAM. Its TTL-compatible I/O and standard 32-SOP pinout match legacy boot-socket designs, and the 70 ns access time is sufficient for boot-loader fetch loops on most 8-bit busses without wait-state insertion beyond one cycle.
Empfohlen
Data Acquisition FIFO Buffer
The K6X1008C2D-BF70's 128K x 8 capacity supports moderate-depth FIFO buffering for industrial data acquisition front-ends, with 70 ns random access suitable for sample rates up to several hundred kSPS at byte-wide bus widths. Fully-static operation eliminates refresh-induced jitter on the data stream, and the three-state outputs ease bus-sharing between the ADC front-end and the host DMA engine.
Empfohlen
Telecommunications Equipment Memory
Telecommunications line cards and remote-terminal units historically use 5 V 128Kx8 SRAM for control-plane scratch memory, route tables, and configuration scratchpads. The K6X1008C2D-BF70's 70 ns access and TTL I/O match these 5 V backplane designs, and its 32-SOP package fits legacy card-edge connector keep-out zones while supporting long-life service requirements for telecom gear.
Empfohlen
Automotive Electronics Aftermarket / Repair
In automotive aftermarket repair of older ECU and instrument-cluster modules, the K6X1008C2D-BF70 supplies an exact 5 V 128Kx8 replacement that matches OEM SRAM footprints. Its 32-SOP-525 lead-free finish meets RoHS requirements, and the fully-static asynchronous interface needs no firmware updates to integrate. Repair shops use this as a known-good drop-in for modules originally shipped with Samsung K6X1008C2D-family memory.
Empfohlen
Legacy Computing Module Replacement
Legacy single-board computers, industrial PCs, and VME/cPCI peripheral cards that use parallel SRAM for scratch and BIOS-extension storage can be sustained using the K6X1008C2D-BF70 in 32-SOP. With 70 ns access, the part tolerates 8-bit and 16-bit ISA-style bus cycles; its low-power CMOS design keeps standby current low for always-on industrial computing peripherals that remain plugged in for years.
Empfohlen
Test & Measurement Calibration Tables
Calibration coefficient tables in bench-top test equipment and lab instruments fit the 128K x 8 capacity of the K6X1008C2D-BF70, and its 70 ns read access allows near-instant lookup during measurement sweeps. The 32-SOP surface-mount package eases rework on instrument PCBs, and the TTL I/O levels couple directly to legacy display-driver and front-panel controller logic without level translation.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K6X1008C2D-BF70 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K6X1008C2D-BF55 | K6X1008C2D-BF55L | K6X1008C2D-GF70 |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | 32-SOP-525 (PDSO32) | 32-SOP-525 - same | 32-SOP-525 - same | 32-SOP-525 - same |
| Memory Organization | 128K x 8 (1 Mbit) | 128K x 8 (1 Mbit) - same | 128K x 8 (1 Mbit) - same | 128K x 8 (1 Mbit) - same |
| Access Time | 70 ns | 55 ns (faster by 15 ns, -21%) | 55 ns low-power (faster by 15 ns, -21%) | 70 ns - same |
| Memory Type | Asynchronous CMOS SRAM | Asynchronous CMOS SRAM - same | Asynchronous CMOS SRAM - same | Asynchronous CMOS SRAM - same |
| I/O Compatibility | TTL-compatible | TTL-compatible - same | TTL-compatible - same | TTL-compatible - same |
| Lead-Free Finish | Yes | Yes - same | Yes - same | Yes - same |
Wichtigste Unterscheidungsmerkmale
- Standard 5 V TTL-compatible asynchronous SRAM interface (vs. K6X1008C2D-BF55)
- Industry-standard 32-SOP-525 footprint (vs. K6X1008C2D-TF55 (32-TSOP1))
- Lead-free finish per Samsung datasheet revision history (vs. K6X1008C2D-BF55 (no explicit low-power variant))
Designhinweise
Place a 0.1 uF ceramic decoupling capacitor within 5 mm of the VCC pin (pin 28) and a 1 uF bulk cap on the same rail to absorb read/write current transients. The K6X1008C2D-BF70 is a fully-static CMOS SRAM, so its current draw is dominated by address-bus transitions and output loading rather than by refresh, but the bus-edge currents can still demand local bulk decoupling on long traces.
Do NOT assume the K6X1008C2D-BF70 (32-SOP-525) is pin-compatible with the K6X1008C2D-TF55 (32-TSOP1 reverse) variant. The SOP and TSOP1 packages use different pin assignments despite the same 32-pin count. Always cross-check the BF70 datasheet SOP pinout against the PCB footprint; mixing the two variants will yield a non-functional board.
Route address and data lines with matched lengths where possible and avoid parallel high-current traces crossing the data bus. The 70 ns access time provides reasonable margin for 8-bit microcontroller busses at moderate clock rates, but ground bounce and signal-integrity issues can erode timing margin if the data bus is heavily loaded. Keep CE, OE, and WE traces short to the host controller to avoid skew between control signals.
Although CMOS SRAM generates relatively little heat, the BF70 commercial-grade operating temperature range and SOP-525 package still benefit from standard PCB thermal practices: provide a continuous ground plane beneath the device and avoid placing it adjacent to high-power dissipators. For designs that approach upper temperature limits, derate the 70 ns access time by leaving additional margin in the MCU wait-state configuration.
Compliance-Informationen
RoHS compliance inferred from the Samsung datasheet revision history entry that added 'Lead Free 32-SOP-525 Product'. REACH compliance assumed per Samsung standard disclosure. AEC-Q100 not applicable for commercial-grade SRAM. Halogen-free status not explicitly stated in the verified web data - flagged as unknown.
