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Samsung Electronics

K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung

MPN: K6X1008C2D-TF55 βœ— End of Life
In Stock Ships in 1-3 business days
4.5 V to 5.5 V Vdss 35 mA Id 32-TSOP REVERSE Package 55 ns, 70 ns Speed SRAM - Asynchronous Memory
From $2.35 USD / Unit
MOQ: 1 |
Price updated: 2026-09-01
Volume Pricing
Qty Unit Price Extended
1 $3.2 $3.20
10 $2.95 $29.50
100 $2.75 $275.00
500 $2.5 $1,250.00
1,000 $2.35 $2,350.00
ℹ️ All prices are in USD

Drop-in alternatives for K6X1008C2D-TF55 β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

K6X1008C2D-GF55

βœ… Drop-In
πŸ“¦ 32-TSOP
same die, same 128Kx8/55ns/5V ratings; package/temperature suffix variant (G vs T)

πŸ“‹ Reference alternative (not in catalog)

K6X1008C2D-TF70

βœ… Drop-In ⚠️ 参数待ιͺŒθ―
πŸ“¦ 32-TSOP REVERSE
access time 70 ns vs 55 ns (+27% slower tAA); same footprint and organization

πŸ“‹ Reference alternative (not in catalog)

K6X1008C2D-TB55

βœ… Drop-In
πŸ“¦ 32-TSOP
same die and timing; different temperature/package suffix; BSI listed as functional-equivalent manufacturer

πŸ“‹ Reference alternative (not in catalog)

M5M51008DVP-55HI

βœ… Drop-In
πŸ“¦ 32-TSOP
cross-brand: same 128Kx8, 55 ns, 5 V async SRAM class; pinout must be verified pin-to-pin

πŸ“‹ Reference alternative (not in catalog)

K6X0808C1D-BF55

βœ… Drop-In
Samsung Electronics
πŸ“¦ 32-TSOP
Asynchronous SRAM Β· 256 Kbit Β· 32K x 8 Β· 55 ns Β· Parallel Β· 5 V Β· CMOS Β· 28-SOP

βœ“ In Stock

$1.85 / Unit

View Datasheet β†’

K6X1008C2D-TF55 Maximum Ratings & Electrical Characteristics

Memory Type SRAM - Asynchronous
Memory Size 1 Mbit
Organization 128K x 8
Access Time (tAA) 55 ns
Interface Parallel
Supply Voltage (Vcc) 4.5 V to 5.5 V
Operating Current 35 mA
Technology Low Power Full CMOS
Package 32-TSOP REVERSE
Mounting Type Surface Mount
Speed Options 55 ns, 70 ns
Memory Format Volatile (SRAM)
Clock Frequency N/A (asynchronous)
RoHS Status RoHS: Yes (per distributor listing)

K6X1008C2D-TF55 32-tsop reverse Pin Configuration Guide

Complete pinout information for K6X1008C2D-TF55 (32-tsop reverse package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

32-tsop reverse package pinout diagram for K6X1008C2D-TF55

No detailed pinout data available for K6X1008C2D-TF55.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for K6X1008C2D-TF55 Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K6X1008C2D-TF55 is suitable for 6 applications: Industrial PLC Memory Expansion, Legacy Telecom Line Cards, Test and Measurement Instrument Repair, Networking Equipment Service Parts, Battery-Backed Data Logging, Aerospace Ground Support & Legacy Avionics Maintenance.

🏭

Industrial PLC Memory Expansion

The K6X1008C2D-TF55 fits industrial programmable logic controllers that still run 5 V CPU boards with external parallel memory buses. Its 55 ns tAA keeps zero-wait-state access for 8-bit microprocessors clocked in the tens of MHz, and the 35 mA operating current stays within the budget of shared industrial 5 V rails. The byte-wide 128K x 8 organization maps one chip directly to a 1 Mbit parameter-table or ladder-logic storage region using only CE/OE/WE glue logic. Because the part is asynchronous, it needs no clock domain and simplifies EMC design in electrically noisy factory environments. When repairing legacy PLCs, the identical-footprint K6X1008C2D-GF55 variant allows drop-in substitution without PCB changes.

🌐

Legacy Telecom Line Cards

Telecom line cards designed in the 1990s commonly used 5 V asynchronous SRAM for call-state tables and firmware scratch memory, and the K6X1008C2D-TF55 matches those sockets exactly. The 4.5 V to 5.5 V supply band tolerates the voltage sag typical of backplane distribution, while 55 ns access time meets the timing of classic NPU/CPU chipsets on these cards. Full CMOS technology minimizes standby drain on always-powered rack equipment, an important thermal consideration when dozens of cards share one shelf. The 32-TSOP REVERSE package provides the compact surface-mount footprint these high-density cards require. Service organizations can keep racks alive by swapping in verified date-code stock or pin-compatible family variants.

πŸ”§

Test and Measurement Instrument Repair

Bench multimeters, oscilloscope front-ends, and data loggers from the 5 V era store calibration constants and setup state in byte-wide SRAM, and the K6X1008C2D-TF55 is a common OEM choice. Its deterministic asynchronous timing means calibration routines written decades ago behave identically after replacement, with no controller or driver changes. The 35 mA operating current and CMOS standby suit battery-backed memory domains where a supercapacitor or lithium cell preserves contents during power-off. When refurbishing instruments, engineers should verify the REVERSE TSOP orientation against the original footprint, since standard and reverse pinout variants of 32-pin TSOP SRAMs were both used in this industry. Stocking 70 ns TF70 units as spares adds timing margin at identical footprint.

πŸ–₯️

Networking Equipment Service Parts

Routers, switches, and CSU/DSU units from the 5 V generation used 1 Mbit asynchronous SRAM for routing tables and buffers, making the K6X1008C2D-TF55 a standard service replacement. The 55 ns access time supports the memory-cycle timing of legacy Motorola and Intel bus microprocessors common in that equipment, and the parallel interface requires no configuration - drop the chip in and the unit boots. Full CMOS construction keeps standby power low on equipment that runs 24/7, and the 4.5 V to 5.5 V tolerance absorbs midplane supply variation. Field engineers should qualify broker stock by date code and sample-test access timing, because EOL SRAM sourced from excess inventory occasionally shows degraded retention or speed bins.

🧩

Battery-Backed Data Logging

In data-logging and metering products, the K6X1008C2D-TF55 stores logged samples in a battery-backed domain, using its CMOS standby mode to stretch backup-cell life for months or years. The 128K x 8 organization gives 131,072 sample bytes of directly addressable storage, enough for substantial event histories without external addressing logic. Write protection is achieved simply by gating CE or WE with a power-fail signal, an approach compatible with the asynchronous interface and 5 V supervisor ICs already present in these designs. The 55 ns write-cycle timing comfortably handles burst logging from slow serial sensors. Because REVERSE TSOP orientation mistakes are destructive, layouts should include pin-1 polarity checks in ICT before battery connection.

✈️

Aerospace Ground Support & Legacy Avionics Maintenance

Ground-support equipment and maintained legacy avionics line-replaceable units frequently specify 5 V CMOS SRAM such as the K6X1008C2D-TF55 for non-flight-critical storage. Maintenance depots value the part's simple asynchronous interface, which allows verification with basic memory-test fixtures - write/read full patterns at 55 ns timing with no configuration step. The wide 4.5 V to 5.5 V input band tolerates generator-driven supply variation common in hangar power. Because this market cannot redesign certified hardware, EOL-management services and broker stock (e.g., the 3,855 units listed by excess channels) are the practical supply path, and documentation of date codes and lot traceability is expected. Cross-brand equivalents require formal change approval before use.

What is the K6X1008C2D-TF55?
The K6X1008C2D-TF55 is a Samsung 1 Mbit low-power full CMOS asynchronous static RAM (SRAM) organized as 128K x 8 bits. It operates from a 4.5 V to 5.5 V supply, provides a 55 ns address access time (tAA), draws about 35 mA operating current, and comes in a 32-TSOP REVERSE surface-mount package. According to the Samsung datasheet, the family is built on advanced CMOS process technology for low standby power.
What is the access time of K6X1008C2D-TF55?
The K6X1008C2D-TF55 has a 55 ns address access time (tAA), which is indicated by the 55 suffix in the part number. According to the Samsung datasheet, the K6X1008C2D family is also offered in a 70 ns speed grade (suffix 70), so designs needing only 70 ns timing can often save cost. For 5 V legacy buses, 55 ns comfortably supports mid-range microprocessor external memory cycles.
Where can I buy K6X1008C2D-TF55 and what does it cost?
The K6X1008C2D-TF55 is available through XAIPART and marketplaces such as DigiKey Marketplace. As of 2026-09-01, XAIPART pricing starts at $3.20 for 1 unit, $2.75 at 100 units, $2.50 at 500 units, and $2.35 at 1000 units. Third-party brokers such as radhardic.com listed 1055 units in inventory at $2.75 per 100-piece lot, so availability from excess stock is realistic but varies by lot date code.
Is K6X1008C2D-TF55 still in production?
The K6X1008C2D-TF55 is treated as end-of-life/obsolete by most distributors; Samsung stopped active promotion of this 5 V asynchronous SRAM family years ago, and listings today come from broker and excess inventory channels. New designs should consider modern 3.3 V SRAM alternatives, while service and repair programs can still source K6X1008C2D-TF55 from stock. Always request date codes and verify authenticity when buying EOL memory from brokers.
What is the difference between K6X1008C2D-TF55 and K6X1008C2D-GF55?
The K6X1008C2D-GF55 and K6X1008C2D-TF55 share the same die, organization (128K x 8), 5 V supply, and 55 ns speed; the difference is the package/temperature suffix variant. Both come in 32-pin TSOP-II style packaging, and broker sources describe the GF55 as a pin-compatible drop-in replacement for industrial controllers. Verify the exact package marking orientation (standard vs REVERSE TSOP) on your specific lot before reflow, since the family spans both pinout conventions.
What is the best drop-in replacement for K6X1008C2D-TF55?
The closest drop-in replacements are other K6X1008C2D variants such as the K6X1008C2D-GF55 (same die, pin-compatible TSOP) and the 70 ns K6X1008C2D-TF70, which uses the identical footprint with relaxed timing. On the cross-brand side, FindIC lists a parametric comparison against the Renesas M5M51008DVP-55HI (1 Mbit, 128K x 8, 55 ns SRAM), but cross-brand TSOP pinouts must be verified pin-to-pin against your footprint before qualifying a swap.
Is the K6X1008C2D-TF55 the same as M5M51008DVP-55HI?
No, they are different manufacturers' parts: the K6X1008C2D-TF55 is Samsung's 128K x 8, 55 ns, 5 V asynchronous SRAM, while the M5M51008DVP-55HI is Renesas' parametrically similar 1 Mbit SRAM. FindIC publishes a direct comparison page for these two MPNs because key specifications (organization, access time, supply) align. However, 'parametrically similar' does not guarantee pin-to-pin TSOP compatibility, so compare both datasheet pinouts against your PCB footprint before substituting.
What package does the K6X1008C2D-TF55 use?
The K6X1008C2D-TF55 uses a 32-pin TSOP package with the REVERSE pinout convention, listed by DigiKey as '32-TSOP REVERSE'. Reverse TSOP means the pin-1 location and pin numbering are mirrored compared with a standard TSOP-II 32, so a footprint drawn for a standard TSOP1-0820 part will not work. Note the Samsung datasheet revision history explicitly mentions deleting the 32-TSOP1-0820R package type entry, confirming the pinout convention changed during the family's life.
Where can I download the K6X1008C2D-TF55 datasheet PDF?
The Samsung K6X1008C2D-TF55 datasheet PDF (128K x 8 bit Low Power CMOS Static RAM, 10 pages) is available from archives such as alldatasheet.com and datasheetbank.com, and XAIPART links the datasheet from its product page. The document covers organization, DC/AC characteristics, timing diagrams for the 55 ns and 70 ns grades, and package drawings. Because the part is EOL, Samsung's own site may no longer host it, so archive copies are the practical source.
Where can I find the K6X1008C2D-TF55 pinout?
The K6X1008C2D-TF55 pinout is shown in the package drawing section of the Samsung 128K x 8 Low Power CMOS SRAM datasheet, which archives such as alldatasheet.com host as a 10-page PDF. Because the device ships in a 32-TSOP REVERSE package, the pin-1 marker and numbering order are mirrored versus standard TSOP-II, and mistaking the convention is the most common cause of damage at first power-up. Verify pin 1 against your footprint silkscreen before placement.
What supply voltage does K6X1008C2D-TF55 require?
The K6X1008C2D-TF55 requires a 5 V nominal supply, with the datasheet specifying Vcc from 4.5 V to 5.5 V. It is a true 5 V CMOS memory and is not 3.3 V tolerant on any input, so it suits legacy TTL/CMOS 5 V buses only. When interfacing to 3.3 V controllers, use level shifters or 5 V-tolerant bus transceivers on address, data, and control lines to prevent latch-up or degradation.
How much current does the K6X1008C2D-TF55 consume?
The K6X1008C2D-TF55 draws approximately 35 mA of operating current according to the Samsung datasheet summary (Operating Current = 35 mA). As a full CMOS asynchronous SRAM, its standby current is far lower than operating current, though the exact standby figure should be read from the datasheet DC characteristics table for your temperature grade. A 35 mA operating budget is modest and typically manageable on shared 5 V industrial rails.
When should I choose the K6X1008C2D-TF55 over a modern SRAM?
Choose the K6X1008C2D-TF55 only when you must maintain or repair an existing 5 V design whose footprint and timing were designed around this exact Samsung part. For all new designs, a 3.3 V asynchronous SRAM or a modern low-power SRAM from Renesas, Cypress/Infineon, or Alliance Memory offers active lifecycle status, lower power, and better availability. Using an EOL Samsung 5 V part in a new build creates a supply risk you cannot mitigate once broker stock is exhausted.
Is K6X1008C2D-TF55 RoHS compliant and lead-free?
Distributor listings for the K6X1008C2D-TF55 report RoHS status 'Yes', and radhardic.com lists the part in tray packaging with RoHS indicated. Because the part is EOL, official Samsung environmental pages no longer carry a certificate for this MPN, so treat RoHS compliance as reported by the distributor channel rather than from a current Samsung declaration. For regulated markets, request the original material declaration from your broker as part of incoming inspection.
What are the key specifications of K6X1008C2D-TF55 that engineers should know?
Engineers should know these core K6X1008C2D-TF55 facts: it is a 1 Mbit asynchronous SRAM organized 128K x 8, fabricated in low-power full CMOS; it runs from 4.5 V to 5.5 V; address access time tAA is 55 ns (70 ns grade also exists); operating current is 35 mA; and it is packaged in a 32-TSOP REVERSE surface-mount body. The part is EOL, sourced today from broker stock, and its REVERSE pinout convention is the top layout pitfall.
Hey Google, what can replace a K6X1008C2D-TF55 SRAM?
You can replace a K6X1008C2D-TF55 with another Samsung K6X1008C2D family variant such as the K6X1008C2D-GF55 or the 70 ns K6X1008C2D-TF70, both pin-compatible in the 32-TSOP package. The Renesas M5M51008DVP-55HI is a parametric equivalent (128K x 8, 55 ns, 5 V SRAM) but requires pinout verification. BSI is also listed as a functional-equivalent manufacturer for the related K6X1008C2D-TB55 in cross-reference databases.
What is the Samsung equivalent for K6X1008C2D-TF55 from another brand?
The most-cited cross-brand equivalent for the K6X1008C2D-TF55 is the Renesas M5M51008DVP-55HI, a 1 Mbit, 128K x 8, 55 ns, 5 V asynchronous CMOS SRAM; FindIC maintains a dedicated K6X1008C2D-TF55 vs M5M51008DVP-55HI comparison page. Cross-reference databases also list BSI as a functional-equivalent source for the family (e.g., K6X1008C2D-TB55). Always confirm package pinout order and timing margins against both datasheets before committing a substitution to production.

Engineering reference data for K6X1008C2D-TF55 β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the K6X1008C2D-TF55 when you must sustain or repair an existing 5 V board whose footprint, timing, and firmware were qualified around Samsung's 128K x 8, 55 ns asynchronous SRAM - no redesign or software change is needed. Choose the K6X1008C2D-TF70 if your bus timing allows 70 ns and you want wider sourcing; same footprint, same die family. Choose the K6X1008C2D-GF55 when your footprint follows the standard (non-REVERSE) TSOP pinout or you need a same-die second source for spares. Consider the Renesas M5M51008DVP-55HI only for diversified sourcing of a new build, since cross-brand pinout verification and re-qualification are required. Avoid this entire 5 V EOL family for new designs: modern 3.3 V SRAMs offer active lifecycle status, lower power, and guaranteed long-term supply. The honest trade-off of the K6X1008C2D-TF55 today is broker-stock risk versus zero-effort legacy compatibility.

Comparison with Alternatives

Parameter This Product K6X1008C2D-GF55 K6X1008C2D-TF70 K6X1008C2D-TB55 M5M51008DVP-55HI
Package 32-TSOP REVERSE 32-TSOP (same die) 32-TSOP REVERSE 32-TSOP 32-TSOP (verify pinout)
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics (BSI functional equiv. listed) Renesas Electronics
Organization 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8
Access Time (tAA) 55 ns 55 ns 70 ns 55 ns 55 ns
Supply Voltage 4.5 V to 5.5 V 4.5 V to 5.5 V 4.5 V to 5.5 V 4.5 V to 5.5 V [DATA_NEEDED]
Operating Current 35 mA 35 mA 35 mA 35 mA [DATA_NEEDED]
Memory Size 1 Mbit 1 Mbit 1 Mbit 1 Mbit 1 Mbit
Lifecycle Status EOL (broker stock) EOL (broker stock) EOL (broker stock) EOL (BSI functional equivalent listed) [DATA_NEEDED]

Key Differentiators

  • Fastest 5 V grade in the K6X1008C2D family (vs K6X1008C2D-TF70)
  • Full 1 Mbit density in a 5 V asynchronous interface (vs K6X0808C1D-BF55)
  • Same-die pin-compatible variants for repair stock (vs M5M51008DVP-55HI)

Design Notes

The K6X1008C2D-TF55 uses a 32-TSOP REVERSE pinout, which is mirrored versus a standard TSOP-II 32 footprint. Samsung's datasheet revision history explicitly deleted the 32-TSOP1-0820R package entry, showing the family shipped with more than one pinout convention during its life. Before reflow, print the footprint from your specific datasheet revision and verify pin 1 (CE location) against the board silkscreen. Placing a standard-TSOP die on a REVERSE footprint shorts Vcc to ground and destroys both the SRAM and often the CPU bus.

Power the device from a regulated 5 V rail held within 4.5 V to 5.5 V; no pin is 3.3 V tolerant. Estimated power dissipation is modest: 5 V x 35 mA = 175 mW during active access, so no thermal copper is required. For battery-backed designs, budget for CMOS standby current from the datasheet DC table and gate CE high during power-down; an incomplete CE level during brownout can corrupt data. Add a 0.1 uF ceramic decoupling capacitor within 3 mm of the Vcc pin plus 4.7 uF bulk per bank.

Because the part is EOL, broker stock may mix speed grades and date codes. Sample-test incoming lots by writing and reading full checkerboard patterns at your system's worst-case timing, and confirm the 55 ns grade (not 70 ns) if your design has no wait states. If using the K6X0808C1D half-density variant to fill sockets, tie the unused highest address pin appropriately - a floating A16 on a reduced-density footprint can alias addresses. Document substitutions with both datasheets attached for change-control.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Unknown

Distributor listings (DigiKey Marketplace, radhardic.com) report RoHS status Yes for this MPN. Because the part is EOL, no current Samsung environmental declaration page is available; REACH/halogen/conflict-minerals status set to unknown rather than assumed.

Data verified on: 2026-09-01 β€” data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Samsung Electronics Samsung Semiconductor K6X1008C2D-TF55 K6X1008C2D-GF55 K6X1008C2D-TF70 K6X1008C2D-TB55 M5M51008DVP-55HI Renesas Electronics SRAM asynchronous static random access memory low power full CMOS SRAM 128K x 8 1 Mbit 32-TSOP REVERSE TSOP-II RoHS Volatile memory tAA access time 5V TTL interface industrial PLC memory telecom line card battery-backed SRAM
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