M25PE16-VMW6TG - 16Mbit SPI NOR Flash 75MHz SOIC-8 | Micron
Teilenummer: M25PE16-VMW6TG ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.38 | $138,00 |
| 500 | $1.21 | $605,00 |
| 1.000 | $1.05 | $1.050,00 |
| 3.000 | $0.92 | $2.760,00 |
M25PE16-VMW6TG Übersicht
A Serial NOR Flash is a non-volatile memory device that combines the density of traditional parallel flash with the pin-efficiency of a serial peripheral interface. NOR Flash (named after the NOR gate logic mapping of its cell array) supports random read access and execute-in-place (XIP) operation, allowing microcontrollers to fetch code directly from flash without first copying it into RAM. Within the memory hierarchy, NOR Flash sits above EEPROM and below SRAM/DRAM in the storage hierarchy: slower than RAM but non-volatile, and faster than NAND Flash with byte-level read granularity.
Key specifications include 75 MHz maximum SPI clock, 50 MHz or 75 MHz variant (per datasheet publication), 256-byte page size for programming, 4 to 64 Kbyte sector/sub-sector erase granularity, JEDEC-standard 3-byte identification (SFDP optional on some revisions), and a wide operating voltage range suitable for 2.5 V and 3.3 V system rails. The device supports standard SPI mode 0 and mode 3, with optional dual/quad I/O on related part numbers.
The architecture combines a uniform 64-Kbyte main block erase granularity with finer 4-Kbyte sub-sector erase capability, enabling flexible firmware storage and bootloader protection schemes. Byte-alterability allows individual bytes to be reprogrammed without first erasing an entire sector (a feature distinguishing the M25PE family from traditional NOR Flash that requires block erase before rewrite).
Typical applications include firmware storage for IoT devices, data logging in industrial sensors, configuration parameter storage in networking equipment, code shadowing for microcontroller boot ROMs, and automotive infotainment boot memory. The page-erasable architecture makes it well suited for applications requiring frequent small-block updates.
When designing with this part, observe the JEDEC-standard SPI timing requirements and provide adequate VCC decoupling close to the IC. The Write Enable (WREN) command must precede any program/erase operation; failure to issue WREN causes the command to be ignored silently.
This page synthesises distributor pricing, drop-in alternatives (including ST-Microelectronics-sourced equivalents and Adesto/Renesas cross-reference candidates) and practical design notes not found in the standalone manufacturer datasheet.
Drop-in-Alternativen für M25PE16-VMW6TG – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
M25PE16-VMW6G
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
M25PE16-VMN6P
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
M25PE16-VMP6G
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
W25Q16VSSIG
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
AT25DF161-SHF-T
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
M25PE16-VMW6TG Grenzwerte & elektrische Eigenschaften
| Speichertyp | FLASH - NOR |
| Speichergröße | 16 Mbit (2 Mb x 8) |
| Density | 16,777 kbit |
| Number of Words | 2 Mwords |
| Bits per Word | 8 bit |
| Schnittstelle | SPI (Serial) |
| Maximum SPI Clock Frequency | 75 MHz |
| Gehäuse / Bauform | 8-SOIC (0.209 in / 5.30 mm wide-body) |
| Montageart | Surface Mount |
| Betriebstemperaturbereich | -40 C to +85 C |
| Page Size | 256 byte |
| Sector Erase Size | 4 Kbyte to 64 Kbyte (sub-sector / sector) |
| Versorgungsspannung | 2.7 V to 3.6 V (typical 3.3 V application) |
| Programming Model | Byte-alterable, page-program |
| RoHS-Status | RoHS compliant |
| MSL-Level | 3 (per JEDEC J-STD-020) |
M25PE16-VMW6TG Pin-Konfiguration
| Pin 1 | CS# — Chip Select (active low). Pulling CS# high deselects the device and SO pin enters high-impedance. |
| Pin 2 | SO — Serial Data Output (MISO). Drives data to the SPI master during read operations. |
| Pin 3 | WP# — Write Protect (active low). When asserted, the Status Register block protect bits BP0/BP1 lock the array against program/erase. |
| Pin 4 | GND — Ground reference. |
| Pin 5 | SI — Serial Data Input (MOSI). Receives commands, addresses and data from the SPI master. |
| Pin 6 | SCK — Serial Clock. Drives the SPI bus; supports mode 0 and mode 3 up to 75 MHz. |
| Pin 7 | HOLD# / RESET# — Hold / Reset (active low). Pauses serial communication without deselecting the device (dual-purpose pin, configuration non-volatile). |
| Pin 8 | VCC — Power supply (2.7 V to 3.6 V typical). |
Typische Anwendungen
M25PE16-VMW6TG ist geeignet für 6 Anwendungs: IoT Sensor Firmware Storage, Industrial Data Logging Module, Networking Equipment Configuration Memory, Consumer Audio Bootloader Storage, Automotive Infotainment Boot Memory, Medical Device Data Storage.
IoT Sensor Firmware Storage
The M25PE16-VMW6TG is well suited for IoT sensor nodes that need 16-Mbit of non-volatile code storage at low cost. With its 75 MHz SPI bus and byte-alterable page architecture, the device can store bootloader, application image, and over-the-air update payloads in a single chip. The 256-byte page size matches common ARM Cortex-M flash-sector layouts, enabling efficient in-place firmware updates. Combined with sub-sector erase granularity of 4 Kbyte, the part allows partial updates without disturbing other firmware regions. Power consumption during read is low, supporting battery-operated wireless sensor networks.
Empfohlen
Industrial Data Logging Module
In industrial data loggers, the M25PE16-VMW6TG serves as the primary non-volatile store for sensor samples and event records. The 16-Mbit capacity supports extended recording intervals between host retrievals, while the byte-alterable architecture simplifies wear-levelling algorithms by allowing single-byte writes. Operating from -40 C to +85 C and at 2.7 V to 3.6 V, the part satisfies typical industrial 24 V-rail-derived 3.3 V supply chains. SPI mode 0/3 compatibility ensures clean integration with most industrial MCUs and PLCs.
Empfohlen
Networking Equipment Configuration Memory
Routers, switches and access points commonly use the M25PE16-VMW6TG to store boot images, configuration profiles, and MAC-address lookup tables. The 75 MHz SPI bus allows fast boot-time code retrieval, minimising router startup latency. Byte-alterable writes enable runtime configuration updates without erasing adjacent data. Standard 8-SOIC wide-body packaging simplifies PCB layout and supports both reflow and hand-prototyping assembly. The part's small footprint also fits inside compact CPE devices where board area is constrained.
Empfohlen
Consumer Audio Bootloader Storage
Smart speakers, sound bars and headphone amplifiers use the M25PE16-VMW6TG to store firmware and DSP coefficient tables. The page-erasable architecture allows audio DSP parameters to be tuned in small increments without erasing the entire audio firmware. SPI compatibility with standard audio DSPs (such as the Analog Devices SigmaDSP family) makes integration straightforward. The 8-SOIC package is well suited to high-volume consumer assembly lines with standard pick-and-place equipment.
Empfohlen
Automotive Infotainment Boot Memory
Although not AEC-Q100 qualified, the M25PE16-VMW6TG has historically been used in non-safety automotive infotainment systems as boot code storage for head-unit and rear-seat entertainment controllers. The wide-body SOIC-8 package withstands automotive thermal cycling better than smaller QFN alternatives. For new designs, automotive-qualified W25Q16JW or S25FL116K parts are preferred. The legacy M25PE16 remains in service fleets where replacement or repair is required.
Empfohlen
Medical Device Data Storage
Portable medical monitors use the M25PE16-VMW6TG to log patient measurements and device calibration data. The 16-Mbit capacity supports weeks of continuous operation between data offloads. SPI connectivity simplifies interface to medical-grade MCUs. The wide-body SOIC-8 footprint eases hand-soldering during medical-device prototyping and certification builds. Note that medical IEC 60601-1 designs must perform their own risk assessment and may require redundancy beyond a single flash IC.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für M25PE16-VMW6TG – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | M25PE16-VMW6G | M25PE16-VMN6P | M25PE16-VMP6G | W25Q16VSSIG | AT25DF161-SHF-T |
|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Winbond | Renesas (Adesto) |
| Package | 8-SOIC (0.209 in wide-body) | 8-SOIC (0.209 in wide-body) - same | 8-SO narrow-body (0.150 in) | 8-SOIC wide-body - same | 8-SOIC (150 mil standard) | 8-SOIC (0.208 in wide-body) - same |
| Density | 16 Mbit | 16 Mbit | 16 Mbit | 16 Mbit | 16 Mbit | 16 Mbit |
| Max SPI Clock | 75 MHz | 75 MHz | 75 MHz | 75 MHz | 104 MHz | 85 MHz |
| Interface | Standard SPI (mode 0/3) | Standard SPI | Standard SPI | Standard SPI | Standard SPI + Dual/Quad SPI | Standard SPI |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.5 V to 3.6 V |
| Operating Temperature | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C |
| Lifecycle Status | Obsolete (Micron EOL) | Obsolete | Obsolete | Obsolete | Active | Active (Renesas/Adesto) |
Wichtigste Unterscheidungsmerkmale
- Byte-alterable page erase architecture (no block-erase precondition required) (vs. W25Q16VSSIG)
- Wide-body SOIC-8 (208 mil / 5.30 mm) for hand-prototyping ease (vs. W25Q16VSSIG (150 mil SOIC))
- Direct Micron legacy design compatibility for existing firmware stacks (vs. AT25DF161-SHF-T)
Designhinweise
Estimated: At VCC=3.3 V, active read current is approximately 15 mA at 75 MHz and standby current is around 50 uA. Place a 100 nF decoupling capacitor within 3 mm of the VCC pin and a 10 uF bulk capacitor near the supply rail. Hold current (CS# low, SCK idle) can reach 25 mA; ensure CS# is pulled high when the part is not selected to minimise system power. Bulk capacitor sizing was estimated assuming typical SPI Flash transient current of 30 mA peak; verify against the actual datasheet figure.
Route the SPI signals (SCK, SI, SO, CS#) as a tightly-coupled bus with characteristic impedance of 50 ohm. Keep trace lengths under 50 mm to avoid ringing at 75 MHz. Place the part away from switching DC-DC converters to prevent conducted noise from corrupting non-volatile writes. Use a 4-layer stack-up with a solid ground plane under the IC to provide a low-impedance return path for SCK edges. Series resistors (22-33 ohm) on SCK, SI and SO reduce ringing on long traces.
Failure to assert CS# correctly is the most common SPI flash bug: CS# must go high between commands and stay low for the entire command sequence. The Write Enable (WREN, 0x06) command MUST precede any Page Program, Sector Erase or Bulk Erase; without WREN the part silently ignores the operation. Hold# pin should be tied to VCC through a 10 kohm pull-up if unused. WP# pin must be tied high (de-asserted) for normal write operations. Use the Read Status Register (0x05) command to poll BUSY bit before issuing further commands.
Wide-body SOIC-8 thermal pad is not present on this package; the part dissipates very little power and no thermal copper pour is required. Maintain at least 0.5 mm clearance between the SOIC-8 leads and adjacent components for hand-soldering rework. Provide a 0.1 uF bypass capacitor on each VCC pin pair. If the design is migrating to quad-SPI on the W25Q16VSSIG, reserve PCB space for an additional 3 GPIO lines (IO2/WPn, IO3/HOLDn) by routing these signals even if unused on the M25PE16-VMW6TG design.
Compliance-Informationen
RoHS-compliant SOIC-8 wide-body. Not AEC-Q100 qualified; choose W25Q16JW or S25FL116K for automotive. Discontinued by Micron; consult Renesas 'Conversion Guide Micron EOL M25PE Products' for replacement.
