M29F800FB55N3E2 - 8Mb 5V 55ns NOR Flash TSOP-48 | Micron
Teilenummer: M29F800FB55N3E2 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $5.9 | $5,90 |
| 10 | $5.31 | $53,10 |
| 100 | $4.72 | $472,00 |
| 500 | $4.25 | $2.125,00 |
| 1.000 | $3.83 | $3.830,00 |
M29F800FB55N3E2 Übersicht
Parallel NOR Flash is a nonvolatile memory technology that stores code and data in NOR-type cells addressed through a parallel address bus, allowing a microprocessor to execute code directly from the array (execute-in-place, XIP). In the memory hierarchy, NOR Flash sits alongside SRAM, DRAM, and EEPROM as a memory IC, and it remains the standard choice for firmware boot storage in embedded systems because of its deterministic random access and high reliability.
Key features include a wide 4.5 V to 5.5 V single supply range, 55 ns access time suitable for zero-wait-state 16-bit buses, a flexible x8/x16 (BYTE# pin) data-bus configuration, and block-protected architecture with a boot block that can be hardware-locked to prevent accidental corruption of boot code. The device supports READ, ERASE, and PROGRAM operations with command-set style programming commands.
Technically, the M29F800FB55N3E2 uses a bottom-boot (B-suffix) block organization: the boot blocks are located at the bottom of the address map, so reset vectors for MCUs such as 68K, PowerPC, and ARM devices reside at the lowest addresses. The '3' grade suffix denotes the extended 125 C operating temperature class (Auto Grade), and 'E2' marks the RoHS-compliant, halogen-free package revision.
Typical applications include firmware boot storage in automotive ECUs, industrial control boards, telecom/networking line cards, and legacy 5 V embedded systems that require field-updatable code retention without a battery.
Designers should note that the 48-pin TSOP requires careful address-bus and BYTE#-pin layout;BYTE# must be tied to VCC for x16-only operation.
This page adds distributor pricing, drop-in alternatives, and practical design notes synthesized from multiple sources beyond the manufacturer datasheet.
Drop-in-Alternativen für M29F800FB55N3E2 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit M29F800FB55N3E2 (gleiche Bauform und Footprint) – abweichend in RoHS Status, Organization, Package, Access Time, Mounting Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
M29F800FB5AN6E2
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
M29F800FB55N3F2
✅ Drop-In✓ Auf Lager
$2.47 / Stück
Datenblatt ansehen →M29F800DB70N6E
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
M29F800GB55N3E2
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
M29F800FT55N3E2
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$4.98 / Stück
Datenblatt ansehen →M29F800FB55N3E2 Technische Daten
| Speichergröße | 8 Mbit (1 M x 8 / 512 K x 16) |
| Speichertyp | NOR Flash, SLC, Parallel |
| Access Time | 55 ns |
| Supply Voltage Min | 4.5 V |
| Supply Voltage Max | 5.5 V |
| Schnittstelle | Parallel |
| Speicherorganisation | Bottom boot (B suffix) |
| Datenbusbreite | 8-bit or 16-bit (BYTE# selectable) |
| Gehäuse | 48-pin TSOP Type I (N suffix) |
| Montageart | Surface Mount (SMD/SMT) |
| Betriebstemperatur | Up to +125 C (Auto Grade 3 suffix) |
| Packing | Tray (blank suffix) |
| RoHS-Status | Compliant (E suffix) |
| Programming Operations | READ, ERASE, PROGRAM via command set |
| Write Protection | Block protection with lockable boot block |
| Status Output | RB# (Ready/Busy) |
M29F800FB55N3E2 48-pin tsop type i (n suffix) Pinbelegungsleitfaden
Pinbelegung für M29F800FB55N3E2 (48-pin tsop type i (n suffix)-Gehäuse). Pin-Nummerierung, Funktionen und Anschlussdiagramme sind im Herstellerdatenblatt definiert. Entnehmen Sie diesem den genauen Footprint und Lötrichtlinien.
Keine detaillierten Pinbelegungsdaten verfügbar für M29F800FB55N3E2.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
M29F800FB55N3E2 ist geeignet für 6 Anwendungs: Automotive ECU Firmware Storage, Industrial Control Boot Storage, Telecom and Networking Line Cards, Legacy 5V Embedded System Maintenance, Automotive Aftermarket and Tuning Modules, Test and Measurement Instrument Firmware.
Automotive ECU Firmware Storage
The M29F800FB55N3E2 fits automotive ECU boot-code storage because its Auto Grade 3 suffix qualifies operation up to +125 C, covering under-hood temperature environments. The bottom boot block with hardware protection keeps reset vectors and bootloader code safe from accidental erase during field firmware updates, while the 55 ns access time allows the microcontroller to execute code directly from Flash (XIP) over the parallel bus without wait states. Used between the MCU address/data bus and the 5 V rail with RB# polled for program/erase completion, it provides deterministic read latency that serial Flash cannot match. The trade-off is a larger 48-pin TSOP footprint versus SPI NOR, acceptable in space-unconstrained automotive modules.
Empfohlen
Industrial Control Boot Storage
Industrial PLC and motor-control boards using 5 V logic benefit from the M29F800FB55N3E2's 4.5 V to 5.5 V single-supply operation, which eliminates a separate 3 V rail for code storage. Its 8 Mbit capacity accommodates a full bootloader plus application image for 16-bit MCUs, and the BYTE# pin lets one BOM position serve both 8-bit and 16-bit bus designs, consolidating inventory. Program and erase commands follow the industry-standard M29F command set, so field firmware update routines written for the ST/Numonyx M29F family port directly. Designers should budget erase latency (block erase takes tens of milliseconds typical) and use the RB# output to handshake with the MCU during updates.
Empfohlen
Telecom and Networking Line Cards
Telecom line cards and legacy network equipment often standardize on 5 V parallel NOR for code storage because it survives noisy backplane environments and powers up reading immediately. The M29F800FB55N3E2's 55 ns access time supports zero-wait-state fetch from 16-bit bus masters, and its hardware block protection lets service teams lock the bootloader partition while leaving the application partition field-updatable via TFTP-style image downloads. The TSOP-48 surface-mount package withstands wave-soldering adjacent processes and delivers reliable operation in rack equipment with elevated ambient temperatures. Its addressability across A0-A18 maps cleanly onto common microprocessor chip-select windows.
Empfohlen
Legacy 5V Embedded System Maintenance
Maintaining aging 5 V embedded designs - test instruments, medical devices, avionics LRU boxes - requires a code-storage device that matches the original 5 V bus without level shifters. The M29F800FB55N3E2 provides exactly this drop-in behavior for boards originally designed around the ST M29F800, since Micron continued the family with identical command sets and footprints. Its RoHS-compliant E2 package revision meets current environmental regulations for repair and remanufacture, addressing the common conflict between leaded legacy BOMs and modern compliance requirements. Availability through DigiKey, Mouser, and Arrow as of 2026-09-02 makes it a practical service-life extension component.
Empfohlen
Automotive Aftermarket and Tuning Modules
Performance tuning modules and aftermarket ECUs frequently re-flash engine maps stored in parallel NOR. The M29F800FB55N3E2 suits this market because its 8 Mbit capacity holds multiple calibration maps, its bottom boot block preserves the bootloader across re-flashes, and the 5 V interface connects directly to classic engine-management MCUs without translation logic. The RB# ready/busy output simplifies polling in update routines executed on-vehicle, and the 125 C rating tolerates engine-bay mounting of plug-in modules. Compared with re-engineering a board for 3 V SPI Flash, qualifying this pin-compatible family variant avoids hardware changes and preserves service documentation.
Empfohlen
Test and Measurement Instrument Firmware
Bench instruments and handheld meters built on 5 V microprocessor architectures use the M29F800FB55N3E2 to store instrument firmware and calibration constants. The 55 ns access time keeps the main loop responsive for front-panel and display tasks, while block-level hardware protection secures the factory calibration partition against corruption during field upgrades - critical because losing calibration data invalidates measurement accuracy. The device's deterministic parallel interface avoids the sector-erase-before-read latency complications of NAND alternatives. Its tray packing supports low-volume instrument builds, and multi-source availability across Micron family suffixes provides a supply chain hedge for long product service lives typical of T&M equipment.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für M29F800FB55N3E2 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | M29F800FB5AN6E2 | M29F800FB55N3F2 | M29F800DB70N6E | M29F800GB55N3E2 | M29F800FT55N3E2 |
|---|---|---|---|---|---|---|
| Package | 48-pin TSOP Type I | 48-pin TSOP Type I - same | 48-pin TSOP Type I - same | 48-pin TSOP Type I - same | 48-pin TSOP Type I - same | 48-pin TSOP Type I - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density | 8 Mbit | 8 Mbit | 8 Mbit | 8 Mbit | 8 Mbit | 8 Mbit |
| Access Time | 55 ns | 55 ns | 55 ns | 70 ns | 55 ns | 55 ns |
| Supply Voltage | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 4.5 V to 5.5 V |
| Boot Block Location | Bottom boot (B) | Bottom boot | Bottom boot | Dual boot (DB) | Top boot (G) | Top boot (T) |
| Temperature Grade | Auto Grade 3, up to +125 C | Grade 6, standard | Grade 3, up to +125 C | Grade 6, standard | Grade 3, up to +125 C | Grade 3, up to +125 C |
| RoHS Compliance | Compliant (E suffix) | Compliant (E suffix) | Compliant (F2 suffix) | Compliant (E suffix) | Compliant (E suffix) | Compliant (E suffix) |
Wichtigste Unterscheidungsmerkmale
- Automotive 125 C grade with bottom boot protection (vs. M29F800DB70N6E)
- Identical electricals to the F2 revision (vs. M29F800FB55N3F2)
- Faster access time in same footprint (vs. M29F800DB70N6E)
Designhinweise
The BYTE# pin defines bus width and is a frequent source of bring-up failures. Tie BYTE# to VCC (or leave driven high) for x16-only operation; when BYTE# is low, DQ15 acts as address A-1 and the device appears as 1 M x 8. If the MCU initializes before the Flash supply stabilizes, ensure RP# is fully high (VIH) before issuing any command - RP# low resets the device and holds outputs high-Z. Always verify the boot-block location (bottom for FB) matches the linker's vector placement before first programming.
Decouple VCC and VCCQ (if used on the family variant) with 0.1 uF ceramic capacitors placed within 5 mm of the TSOP-48 power pins, plus one 4.7 uF bulk capacitor per device. Program and erase operations draw current pulses that can collapse a weak 5 V rail; a solid ground plane under the device reduces ground bounce on the address bus during 55 ns accesses. Keep address-line stubs under 50 mm to avoid ringing at full bus speed, and route the RB# line away from address lines since it toggles during write operations.
The device operates from a 4.5 V to 5.5 V single supply. Estimate: during program/erase the family draws peak currents on the order of tens of milliamps per the M29F datasheet current tables, so size the 5 V regulator with headroom for simultaneous program operations. Ensure the supply ramps monotonically; power-ramp anomalies can leave the state machine in an undefined command state, which the datasheet resolves via a reset (RP# pulse) or dummy read cycles. Do not hot-plug the device in-circuit without asserting RP# low first.
The 48-pin TSOP Type I in tray packing is rated for the Auto Grade 3 environment up to +125 C ambient for this suffix. Estimated: with typical read-mode dissipation well below 200 mW, junction rise above ambient is minimal (<10 C at 40 C/W package theta-JA order of magnitude), so no heatsinking is needed. However, verify board-level temperature at the device location in sealed enclosures, where self-heating from nearby regulators can add 20 C or more to local ambient.
Compliance-Informationen
E suffix denotes RoHS-compliant package per Micron part nomenclature (digchip datasheet breakdown). Grade 3 suffix denotes Auto Grade 125 C parts. REACH/halogen-free/conflict-minerals status not stated in provided data.
