M29F800FB55N3E2 vs M29F800FT55N3E2 Vergleich
Detaillierter Direktvergleich von M29F800FB55N3E2 von Micron Technology und M29F800FT55N3E2 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29F800FB55N3E2 | M29F800FT55N3E2 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | EEPROM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,83 | $4,98 |
| Speichergröße | 8 Mbit (1 M x 8 / 512 K x 16) | — |
| Speichertyp | NOR Flash, SLC, Parallel | NOR Flash |
| Access Time | 55 ns | 55 ns |
| Supply Voltage Min | 4.5 V | — |
| Supply Voltage Max | 5.5 V | — |
| Schnittstelle | Parallel | Parallel |
| Speicherorganisation | Bottom boot (B suffix) | — |
| Datenbusbreite | 8-bit or 16-bit (BYTE# selectable) | — |
| Gehäuse | 48-pin TSOP Type I (N suffix) | 48-TSOP I |
| Montageart | Surface Mount (SMD/SMT) | Surface Mount |
| Betriebstemperatur | Up to +125 C (Auto Grade 3 suffix) | -40C to +125C |
| Packing | Tray (blank suffix) | — |
| RoHS-Status | Compliant (E suffix) | Compliant (E suffix = lead-free/RoHS) |
| Programming Operations | READ, ERASE, PROGRAM via command set | — |
| Write Protection | Block protection with lockable boot block | — |
| Status Output | RB# (Ready/Busy) | — |
| Memory Organization | — | 512K x 16 (8 Mbit) |
| Density | — | 8389 kbits |
| Versorgungsspannung | — | 5 V |
| Boot Block Architecture | — | Top Boot Block |
| Word/Byte Configuration | — | BYTE# pin selectable (16-bit / 8-bit) |
| Hardware Reset / Power-Down | — | RP# pin |
| Embedded Program/Erase Controller | — | Yes (byte/word program, block erase) |
| Program/Erase Endurance | — | 100,000 cycles per block (typical for family) |
| Data Retention | — | >20 years (typical for family) |
| Ready/Busy Output | — | Yes |