M321R3GA3PB0-CWM - 24GB DDR5-5600 ECC RDIMM | Samsung
Teilenummer: M321R3GA3PB0-CWM ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
M321R3GA3PB0-CWM Übersicht
A Registered DIMM (RDIMM) is an enterprise-class memory module that buffers address and command signals through a register IC before they reach the DRAM, reducing electrical loading and enabling higher memory capacities per channel than unbuffered UDIMMs. RDIMMs sit within the memory module hierarchy: DRAM chip -> rank -> DIMM -> server memory subsystem. ECC (Error Correcting Code) plus DDR5 on-die ECC and on-module power management (PMIC) deliver the reliability required in data center environments. Note that RDIMMs are not compatible with consumer PCs or laptops.
Key features include the DDR5 transfer rate of 5600 Mbps with CL46 latency, 1.1V operation for roughly 30% lower power versus DDR4 equivalents, ECC Registered buffering for stable multi-DIMC operation, and 24GB capacity per module in a space-saving 1Rx8 population. The module follows the JEDEC-standard 288-pin DDR5 RDIMM outline with sideband SPD configuration logic.
Architecturally, the module integrates DDR5 DRAM devices with a registering clock driver, an on-module power management IC that converts the 12V system rail to the 1.1V DRAM rail, and SPD EEPROM that enumerates timing profiles to the BIOS at boot. This offloads power delivery and timing negotiation from the memory controller, improving signal integrity and system-level robustness.
Typical applications include 5th/4th Gen Intel Xeon Scalable and AMD EPYC 9004-series servers, virtualization and cloud infrastructure hosts, and HPC compute nodes where validated Lenovo ThinkSystem SR630 V3 / SR650 V3 / SR650 V4 and SD650 V3 platforms match this module through vendor cross-references.
Design consideration: populate memory channels in matched sets per the server vendor population rules; mixing single-rank 24GB modules with dual-rank 32GB/48GB modules is supported on most DDR5 platforms but may change achievable speed tiers per-channel.
This page synthesizes distributor stock data, drop-in RDIMM alternatives, and platform compatibility notes not found in the Samsung datasheet.
Drop-in-Alternativen für M321R3GA3PB0-CWM – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit M321R3GA3PB0-CWM (gleiche Bauform und Footprint) – abweichend in Module Type, Capacity, Compatible Platforms, ECC, Form Factor.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
M321R2GA3PB0-CWM
✅ Drop-In✓ Auf Lager
$37.5 / Stück
Datenblatt ansehen →M321R4GA3PB0-CWM
✅ Drop-In✓ Auf Lager
$1033.5938 / Stück
Datenblatt ansehen →M321R6GA3PB0-CWM
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
M324R4GA3PB0-CWM
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
M321R4GA0PB0-CWM
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
M321R4GA3PB0-CWM-Q1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
NEMIX RAM M321R3GA3PB0-CWM-COMPATIBLE 24GB DDR5-5600 RDIMM
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
M321R3GA3PB0-CWM Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR5 SDRAM |
| Module Type | 288-Pin ECC Registered DIMM (RDIMM) |
| Capacity | 24 GB |
| Speicherorganisation | 3Gx72 |
| Rank | Single Rank (1Rx8) |
| Transfer Rate | 5600 Mbps (PC5-44800) |
| CAS-Latenz | CL46 |
| Operating Voltage | 1.1 V |
| DRAM Configuration | 10 x FBGA 3Gx8 DDR5 DRAM |
| ECC Support | Yes (ECC Registered) |
| Pins | 288 |
| Buffered | Yes (Registered/Buffered) |
| Compatible Platforms | Lenovo ThinkSystem SR630 V3, SR650 V3, SR650 V4, SD650 V3 (vendor cross-refs verified) |
| Application | Server / Data Center |
| Consumer PC Compatibility | No (server memory only) |
| Lebenszyklusstatus | Mass Production |
M321R3GA3PB0-CWM standard Pinbelegungsleitfaden
Pinbelegung für M321R3GA3PB0-CWM (standard-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für M321R3GA3PB0-CWM.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
M321R3GA3PB0-CWM ist geeignet für 6 Anwendungs: Enterprise Rack Servers, Virtualization and Cloud Infrastructure, High-Performance Computing (HPC) Nodes, Data Center Memory Expansion and Upgrades, Storage and Database Appliances, Edge and Telecommunications Servers.
Enterprise Rack Servers
The M321R3GA3PB0-CWM is a primary fit for 1U/2U enterprise rack servers built on 5th/4th Gen Intel Xeon Scalable and AMD EPYC 9004-series CPUs, which expose 8-12 DDR5 memory channels per socket at up to 5600 MT/s. Its single-rank 1Rx8 24GB organization keeps per-channel electrical loading low, allowing all channels to run at full DDR5-5600 speed in validated platforms such as Lenovo ThinkSystem SR630 V3 and SR650 V3/V4. The ECC Registered interface plus DDR5 on-die ECC sustains 24/7 virtualization and database workloads, while the 1.1V rail reduces memory-subsystem power versus DDR4 RDIMMs. Populate matched modules per channel for optimal bandwidth.
Empfohlen
Virtualization and Cloud Infrastructure
Hypervisor hosts benefit directly from the M321R3GA3PB0-CWM's 24GB per-DIMM density and DDR5-5600 bandwidth: consolidating dozens of VMs per node is memory-bound, and the PC5-44800 transfer rate with CL46 latency raises effective per-core memory throughput versus DDR4-4800 RDIMMs. The ECC Registered architecture corrects single-bit errors transparently, preventing silent data corruption in multi-tenant environments. Because it is a JEDEC-standard 288-pin RDIMM, the module qualifies across mainstream OEM platforms, enabling mixed-vendor fleets to standardize on one 24GB SKU. Its 1.1V operation also trims data center energy cost at fleet scale.
Empfohlen
High-Performance Computing (HPC) Nodes
HPC clusters running CFD, molecular dynamics, and weather modeling are sensitive to sustained memory bandwidth. The M321R3GA3PB0-CWM delivers DDR5-5600 with two independent 32-bit sub-channels per DIMM, a DDR5 architectural improvement over DDR4's single 64-bit channel that improves effective concurrency. Single-rank modules reduce rank-switching overhead in bandwidth-bound kernels and allow full-channel speed on all populated slots. Ten FBGA 3Gx8 DRAMs per module with on-module PMIC provide stable power delivery under bursty HPC load profiles. Mix 24GB single-rank with 48GB dual-rank SKUs to match per-node memory budgets.
Empfohlen
Data Center Memory Expansion and Upgrades
The M321R3GA3PB0-CWM serves as the standard upgrade SKU for refreshing installed DDR5 server bases: it is validated via vendor cross-references such as Lenovo 4X77A95267 in ThinkSystem SD650 V3, SR630 V3, SR650 V3, and SR650 V4, so IT teams can order by vendor part number without platform requalification. With 20,000+ pcs of distributor stock as of August 2026, spares and phased rollouts are well supplied. Because the module is JEDEC-compliant 1.1V 288-pin RDIMM, it hot-fits any DDR5-5600-capable slot; firmware enumerates SPD profiles automatically at POST for 5600, 5200, or 4800 MT/s operation depending on CPU support.
Empfohlen
Storage and Database Appliances
In-memory databases, NVMe caching tiers, and scale-out storage controllers demand both capacity and bandwidth per socket. The M321R3GA3PB0-CWM's 3Gx72 organization provides the 64-bit data path plus 8 ECC bits required by server memory controllers, and its registered buffering sustains signal integrity on heavily populated boards with two DIMMs per channel. CL46 latency at 5600 Mbps keeps transactional database response times predictable, while ECC Registered protection ensures the buffer pools and WAL logs in memory survive single-bit events without node failure. Server OEMs qualify this exact Samsung SKU in their storage reference configurations.
Empfohlen
Edge and Telecommunications Servers
5G core, MEC (multi-access edge computing), and network-appliance servers use compact 1U platforms where the M321R3GA3PB0-CWM's single-rank, 1.1V design delivers a strong performance-per-watt profile. DDR5's on-module PMIC moves power conversion onto the DIMM, simplifying edge server board design and improving rail accuracy for the ten DRAM devices. ECC Registered reliability addresses the unattended operating model of edge sites where physical service visits are costly. With 24GB per module, a typical two-socket edge node reaches 192-384GB in a shallow chassis, sufficient for vRAN and containerized network functions.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für M321R3GA3PB0-CWM – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | M321R2GA3PB0-CWM | M321R4GA3PB0-CWM | M321R6GA3PB0-CWM | M324R4GA3PB0-CWM | NEMIX RAM 24GB DDR5-5600 RDIMM |
|---|---|---|---|---|---|---|
| Package | 288-Pin DDR5 RDIMM | 288-Pin DDR5 RDIMM - same | 288-Pin DDR5 RDIMM - same | 288-Pin DDR5 RDIMM - same | 288-Pin DDR5 RDIMM - same | 288-Pin DDR5 RDIMM - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | NEMIX RAM |
| Memory Size | 24 GB | 16 GB | 32 GB | 48 GB | 32 GB | 24 GB |
| Transfer Rate | 5600 Mbps (PC5-44800) | 5600 Mbps (PC5-44800) | 5600 Mbps (PC5-44800) | 5600 Mbps (PC5-44800) | 5600 Mbps | 5600 Mbps (PC5-44800) |
| Rank Configuration | 1Rx8 (Single Rank) | 1Rx8 (Single Rank) | 2Rx8 (Dual Rank) | 2Rx8 (Dual Rank) | Dual Rank | 1Rx8 (Single Rank) |
| Operating Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| ECC / Buffering | ECC Registered | ECC Registered | ECC Registered | ECC Registered | ECC Registered | ECC Registered |
Wichtigste Unterscheidungsmerkmale
- Single-rank 1Rx8 topology at 24GB (vs. M321R4GA3PB0-CWM)
- Lower cost per module for slot-rich servers (vs. M321R6GA3PB0-CWM)
- Same-speed 5600 Mbps alternative to 4800 MT/s parts (vs. M324R4GA3BB0-CQK)
- Native Samsung silicon with OEM validation (vs. NEMIX RAM 24GB DDR5-5600 RDIMM)
Designhinweise
Do not install the M321R3GA3PB0-CWM in consumer desktops, workstations with UDIMM-only boards, or laptops - it is a 288-pin ECC Registered server module and will not boot in unbuffered slots. Also never mix RDIMMs with LRDIMMs or UDIMMs in the same channel. Mixing this 24GB single-rank module with 32GB/48GB dual-rank modules on one channel is permitted on most DDR5 platforms but may force the channel to a lower speed tier; consult the server vendor population rules.
The module runs at 1.1V and generates its DRAM core rail from the 12V slot input via the on-module PMIC, so per-module power is modest relative to DDR4 RDIMMs. For dense configurations (24+ DIMMs per 2U node), estimate total memory-subsystem power as approximately 3-5 W per 24GB module under typical load (estimate; consult the Samsung datasheet IDD figures for exact budgeting) and verify chassis airflow over the DIMM slots, since DDR5 modules omit the DDR3-era heatspreaders on many server SKUs.
Handle RDIMMs by the edges and use an ESD wrist strap - the exposed gold edge contacts carry the 12V input and DDR5 bus. When populating a server with multiple M321R3GA3PB0-CWM modules, follow the white-slot-first population sequence printed on the motherboard, filling channels evenly (one DIMM per channel before adding a second per channel) to preserve the 5600 MT/s speed grade. Update BIOS/firmware to the latest revision so SPD profiles for this Samsung SKU enumerate correctly.
Compliance-Informationen
Compliance data not present in the provided web sources. Samsung mass-production DDR5 RDIMMs are typically RoHS compliant, but this must be confirmed from the official Samsung datasheet or product page before claiming compliance.
