M321R3GA3PB0-CWM - 24GB DDR5-5600 ECC RDIMM | Samsung
MPN: M321R3GA3PB0-CWM β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for M321R3GA3PB0-CWM β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
M321R2GA3PB0-CWM
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View Datasheet βM321R4GA3PB0-CWM
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View Datasheet βM321R6GA3PB0-CWM
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M324R4GA3PB0-CWM
β Drop-Inπ Reference alternative (not in catalog)
M321R4GA0PB0-CWM
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M321R4GA3PB0-CWM-Q1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
NEMIX RAM M321R3GA3PB0-CWM-COMPATIBLE 24GB DDR5-5600 RDIMM
β Drop-Inπ Reference alternative (not in catalog)
M321R3GA3PB0-CWM Maximum Ratings & Electrical Characteristics
| Memory Type | DDR5 SDRAM |
| Module Type | 288-Pin ECC Registered DIMM (RDIMM) |
| Capacity | 24 GB |
| Organization | 3Gx72 |
| Rank | Single Rank (1Rx8) |
| Transfer Rate | 5600 Mbps (PC5-44800) |
| CAS Latency | CL46 |
| Operating Voltage | 1.1 V |
| DRAM Configuration | 10 x FBGA 3Gx8 DDR5 DRAM |
| ECC Support | Yes (ECC Registered) |
| Pins | 288 |
| Buffered | Yes (Registered/Buffered) |
| Compatible Platforms | Lenovo ThinkSystem SR630 V3, SR650 V3, SR650 V4, SD650 V3 (vendor cross-refs verified) |
| Application | Server / Data Center |
| Consumer PC Compatibility | No (server memory only) |
| Lifecycle Status | Mass Production |
M321R3GA3PB0-CWM standard Pin Configuration Guide
Complete pinout information for M321R3GA3PB0-CWM (standard package) with 288 pins. This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for M321R3GA3PB0-CWM.
Refer to the datasheet for full pin configuration.
Estimated pin count: 288 pins (digital package)
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
M321R3GA3PB0-CWM is suitable for 6 applications: Enterprise Rack Servers, Virtualization and Cloud Infrastructure, High-Performance Computing (HPC) Nodes, Data Center Memory Expansion and Upgrades, Storage and Database Appliances, Edge and Telecommunications Servers.
Enterprise Rack Servers
The M321R3GA3PB0-CWM is a primary fit for 1U/2U enterprise rack servers built on 5th/4th Gen Intel Xeon Scalable and AMD EPYC 9004-series CPUs, which expose 8-12 DDR5 memory channels per socket at up to 5600 MT/s. Its single-rank 1Rx8 24GB organization keeps per-channel electrical loading low, allowing all channels to run at full DDR5-5600 speed in validated platforms such as Lenovo ThinkSystem SR630 V3 and SR650 V3/V4. The ECC Registered interface plus DDR5 on-die ECC sustains 24/7 virtualization and database workloads, while the 1.1V rail reduces memory-subsystem power versus DDR4 RDIMMs. Populate matched modules per channel for optimal bandwidth.
Recommended
Virtualization and Cloud Infrastructure
Hypervisor hosts benefit directly from the M321R3GA3PB0-CWM's 24GB per-DIMM density and DDR5-5600 bandwidth: consolidating dozens of VMs per node is memory-bound, and the PC5-44800 transfer rate with CL46 latency raises effective per-core memory throughput versus DDR4-4800 RDIMMs. The ECC Registered architecture corrects single-bit errors transparently, preventing silent data corruption in multi-tenant environments. Because it is a JEDEC-standard 288-pin RDIMM, the module qualifies across mainstream OEM platforms, enabling mixed-vendor fleets to standardize on one 24GB SKU. Its 1.1V operation also trims data center energy cost at fleet scale.
Recommended
High-Performance Computing (HPC) Nodes
HPC clusters running CFD, molecular dynamics, and weather modeling are sensitive to sustained memory bandwidth. The M321R3GA3PB0-CWM delivers DDR5-5600 with two independent 32-bit sub-channels per DIMM, a DDR5 architectural improvement over DDR4's single 64-bit channel that improves effective concurrency. Single-rank modules reduce rank-switching overhead in bandwidth-bound kernels and allow full-channel speed on all populated slots. Ten FBGA 3Gx8 DRAMs per module with on-module PMIC provide stable power delivery under bursty HPC load profiles. Mix 24GB single-rank with 48GB dual-rank SKUs to match per-node memory budgets.
Recommended
Data Center Memory Expansion and Upgrades
The M321R3GA3PB0-CWM serves as the standard upgrade SKU for refreshing installed DDR5 server bases: it is validated via vendor cross-references such as Lenovo 4X77A95267 in ThinkSystem SD650 V3, SR630 V3, SR650 V3, and SR650 V4, so IT teams can order by vendor part number without platform requalification. With 20,000+ pcs of distributor stock as of August 2026, spares and phased rollouts are well supplied. Because the module is JEDEC-compliant 1.1V 288-pin RDIMM, it hot-fits any DDR5-5600-capable slot; firmware enumerates SPD profiles automatically at POST for 5600, 5200, or 4800 MT/s operation depending on CPU support.
Recommended
Storage and Database Appliances
In-memory databases, NVMe caching tiers, and scale-out storage controllers demand both capacity and bandwidth per socket. The M321R3GA3PB0-CWM's 3Gx72 organization provides the 64-bit data path plus 8 ECC bits required by server memory controllers, and its registered buffering sustains signal integrity on heavily populated boards with two DIMMs per channel. CL46 latency at 5600 Mbps keeps transactional database response times predictable, while ECC Registered protection ensures the buffer pools and WAL logs in memory survive single-bit events without node failure. Server OEMs qualify this exact Samsung SKU in their storage reference configurations.
Recommended
Edge and Telecommunications Servers
5G core, MEC (multi-access edge computing), and network-appliance servers use compact 1U platforms where the M321R3GA3PB0-CWM's single-rank, 1.1V design delivers a strong performance-per-watt profile. DDR5's on-module PMIC moves power conversion onto the DIMM, simplifying edge server board design and improving rail accuracy for the ten DRAM devices. ECC Registered reliability addresses the unattended operating model of edge sites where physical service visits are costly. With 24GB per module, a typical two-socket edge node reaches 192-384GB in a shallow chassis, sufficient for vRAN and containerized network functions.
Recommended
Recommended Products Summary
Engineering reference data for M321R3GA3PB0-CWM β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | M321R2GA3PB0-CWM | M321R4GA3PB0-CWM | M321R6GA3PB0-CWM | M324R4GA3PB0-CWM | NEMIX RAM 24GB DDR5-5600 RDIMM |
|---|---|---|---|---|---|---|
| Package | 288-Pin DDR5 RDIMM | 288-Pin DDR5 RDIMM - same | 288-Pin DDR5 RDIMM - same | 288-Pin DDR5 RDIMM - same | 288-Pin DDR5 RDIMM - same | 288-Pin DDR5 RDIMM - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | NEMIX RAM |
| Memory Size | 24 GB | 16 GB | 32 GB | 48 GB | 32 GB | 24 GB |
| Transfer Rate | 5600 Mbps (PC5-44800) | 5600 Mbps (PC5-44800) | 5600 Mbps (PC5-44800) | 5600 Mbps (PC5-44800) | 5600 Mbps | 5600 Mbps (PC5-44800) |
| Rank Configuration | 1Rx8 (Single Rank) | 1Rx8 (Single Rank) | 2Rx8 (Dual Rank) | 2Rx8 (Dual Rank) | Dual Rank | 1Rx8 (Single Rank) |
| Operating Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| CAS Latency | CL46 | CL46 | CL46 | CL46 | [DATA_NEEDED] | CL46 |
| ECC / Buffering | ECC Registered | ECC Registered | ECC Registered | ECC Registered | ECC Registered | ECC Registered |
| Lifecycle Status | Mass Production | [DATA_NEEDED] | [DATA_NEEDED] | Mass Production | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Single-rank 1Rx8 topology at 24GB (vs M321R4GA3PB0-CWM)
- Lower cost per module for slot-rich servers (vs M321R6GA3PB0-CWM)
- Same-speed 5600 Mbps alternative to 4800 MT/s parts (vs M324R4GA3BB0-CQK)
- Native Samsung silicon with OEM validation (vs NEMIX RAM 24GB DDR5-5600 RDIMM)
Design Notes
Do not install the M321R3GA3PB0-CWM in consumer desktops, workstations with UDIMM-only boards, or laptops - it is a 288-pin ECC Registered server module and will not boot in unbuffered slots. Also never mix RDIMMs with LRDIMMs or UDIMMs in the same channel. Mixing this 24GB single-rank module with 32GB/48GB dual-rank modules on one channel is permitted on most DDR5 platforms but may force the channel to a lower speed tier; consult the server vendor population rules.
The module runs at 1.1V and generates its DRAM core rail from the 12V slot input via the on-module PMIC, so per-module power is modest relative to DDR4 RDIMMs. For dense configurations (24+ DIMMs per 2U node), estimate total memory-subsystem power as approximately 3-5 W per 24GB module under typical load (estimate; consult the Samsung datasheet IDD figures for exact budgeting) and verify chassis airflow over the DIMM slots, since DDR5 modules omit the DDR3-era heatspreaders on many server SKUs.
Handle RDIMMs by the edges and use an ESD wrist strap - the exposed gold edge contacts carry the 12V input and DDR5 bus. When populating a server with multiple M321R3GA3PB0-CWM modules, follow the white-slot-first population sequence printed on the motherboard, filling channels evenly (one DIMM per channel before adding a second per channel) to preserve the 5600 MT/s speed grade. Update BIOS/firmware to the latest revision so SPD profiles for this Samsung SKU enumerate correctly.
Compliance Information
Compliance data not present in the provided web sources. Samsung mass-production DDR5 RDIMMs are typically RoHS compliant, but this must be confirmed from the official Samsung datasheet or product page before claiming compliance.
