MHT1004GNR3 - 280W RF Power LDMOS, 2.45GHz | NXP Semiconductors
Teilenummer: MHT1004GNR3 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $132.5 | $1.325,00 |
| 100 | $118 | $11.800,00 |
| 250 | $110 | $27.500,00 |
| 500 | $102 | $51.000,00 |
MHT1004GNR3 Übersicht
An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized RF power MOSFET architecture that combines high power density, excellent gain, and good thermal performance with relatively low cost. RF power transistors sit within the power MOSFET family and are engineered specifically for high-frequency, high-power amplification — most often serving as the final stage in a transmit chain for radar, communications base stations, industrial/scientific/medical (ISM) equipment, and microwave heating systems.
Key features of the MHT1004GNR3 include 300 W CW output power in the 2.45 GHz ISM band, 15.2 dB typical gain at 2450 MHz, a 65 V maximum drain-source voltage rating, and a rugged construction optimized for sustained high-CW operation. The high gain reduces the required driver-stage count, while the high power density simplifies thermal management when mounted to an appropriate heatsink.
Architecturally, the MHT1004N/MHT1004GN family uses an N-channel enhancement-mode LDMOS structure optimized for high-efficiency Class-AB or Class-C operation. The combination of low parasitic capacitance and high breakdown voltage allows the part to be used in narrowband or broadband matching networks for industrial heating and microwave-oven magnetrons replacement designs.
Typical applications include solid-state replacement of magnetrons in microwave ovens, industrial RF heating/drying equipment, plasma generation, and 2.45 GHz ISM-band scientific equipment. The 2450 MHz operating point is the globally allocated industrial/scientific/medical band, making the part a natural fit for any continuous-wave RF heating application.
When designing with this part, ensure the heatsink thermal resistance is sized to keep the junction below the manufacturer's derating curve, and that the matching network presents the published load impedance at the fundamental and harmonic frequencies. Input matching should be optimized for maximum gain while output matching should target maximum efficiency at the desired output power, not necessarily maximum gain.
This page synthesizes distributor pricing, parametric comparisons, and practical design notes for the MHT1004GNR3 not found together in any single manufacturer datasheet or distributor listing.
Drop-in-Alternativen für MHT1004GNR3 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MHT1004N
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MHT1004GN
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MHT1004GNR3 Grenzwerte & elektrische Eigenschaften
| Transistortyp | LDMOS, N-Channel (RF Power) |
| Frequency | 2450 MHz (ISM band) |
| Typical Power Output | 280 W CW |
| P1dB/Psat Rated Power | 300 W CW |
| Typical Gain | 15.2 dB at 2450 MHz |
| Drain-Source Voltage (Vds) Max | 65 V |
| Test Voltage | 32 V |
| Test Current | 100 mA |
| Current Rating | 10 uA (leakage) |
| Gehäuse / Bauform | OM-780-2 Gull-wing ceramic |
| Montageart | Surface Mount / Flange |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | 3 |
| Terminal Finish | Tin (Sn) per JESD-609 e3 |
| Peak Reflow Temperature | 260 C (max 40 s) |
| RoHS-Status | Compliant (per distributor listings) |
| Application | Consumer/commercial cooking, ISM heating at 2.45 GHz |
| Manufacturer | NXP USA Inc. (formerly Freescale Semiconductor) |
MHT1004GNR3 Pin-Konfiguration
| Pin 1 | GATE — RF input / gate bias; DC bias and RF drive signal input |
| Pin 2 | DRAIN — RF output / drain bias; DC supply (typically 32 V) and modulated RF output |
| Pin FLANGE | SOURCE — Source / thermal mounting surface; metal flange provides source connection and heatsink attachment |
MHT1004GNR3 Sicherer Arbeitsbereich (DC)
Typische Anwendungen
MHT1004GNR3 ist geeignet für 6 Anwendungs: Solid-State Microwave Oven Replacement, Industrial RF Heating and Drying Equipment, Plasma Generation and Excitation, 2.45 GHz ISM-Band Scientific Equipment, RF Energy for Food Processing and Sterilization, Transmitter Final Stage for ISM-Link Data Systems.
Solid-State Microwave Oven Replacement
The MHT1004GNR3 is ideally suited as a solid-state replacement for magnetrons in consumer and commercial microwave ovens operating at 2450 MHz, per the NXP datasheet. Its 280-300 W CW output power and 15.2 dB gain deliver equivalent heating performance to a magnetron while enabling precise amplitude and pulse control impossible with vacuum-tube sources. The OM-780-2 Gull-wing ceramic package provides reliable flange-mount heatsinking for the continuous-duty cooking duty cycle. Unlike magnetrons, the MHT1004GNR3 supports instant on/off, phase-controlled heating, and frequency-agile operation for next-generation smart cooking appliances.
Empfohlen
Industrial RF Heating and Drying Equipment
In industrial RF heating, drying, and material-processing systems, the MHT1004GNR3 provides 300 W CW at 2450 MHz per the NXP datasheet, with high efficiency Class-AB operation that minimizes heat waste in 24/7 production environments. The LDMOS architecture's high gain (15.2 dB) eliminates intermediate driver stages, simplifying the bill of materials. Thermal management is straightforward via the OM-780-2 flange bolted to a chassis-mount heatsink. The 65 V maximum VDS rating provides comfortable margin for the 32 V operating point, ensuring long-term reliability under industrial continuous-duty conditions.
Empfohlen
Plasma Generation and Excitation
The MHT1004GNR3 is well-matched to plasma-generation systems used in semiconductor processing, lighting, and materials research at 2450 MHz, per the NXP datasheet frequency specification. Its 280-300 W CW output provides the energy density needed for plasma ignition and sustain, while the 15.2 dB gain allows a low-power signal source to drive the plasma chamber directly. The 65 V VDS rating gives robustness against VSWR transients caused by plasma ignition and extinction events. The OM-780-2 ceramic flange package withstands the elevated ambient temperatures near plasma chambers.
Empfohlen
2.45 GHz ISM-Band Scientific Equipment
Scientific and laboratory equipment operating in the 2.4 GHz ISM band benefits from the MHT1004GNR3's specified 2450 MHz performance per the NXP datasheet, including research instruments for chemistry, biology, and physics experiments requiring controlled RF heating or excitation. The narrowband nature of the part (optimized for 2.45 GHz) is well-suited to fixed-frequency lab applications where broadband performance is unnecessary. Stable DC characteristics (32 V operation, 100 mA bias) make the part repeatable across laboratory measurement protocols. The ceramic package provides stable RF performance across laboratory temperature ranges.
Empfohlen
RF Energy for Food Processing and Sterilization
Industrial food processing lines use 2450 MHz RF energy for pasteurization, sterilization, and tempering applications. The MHT1004GNR3's 280-300 W CW output (per the NXP datasheet) supplies the continuous energy density required for these throughput-limited industrial processes. Compared to legacy magnetron sources, the MHT1004GNR3's solid-state reliability and precise power control reduce unplanned line stoppages and enable recipe-controlled heating profiles. The 65 V VDS rating accommodates the variable-load impedance of food products with changing moisture content during processing.
Empfohlen
Transmitter Final Stage for ISM-Link Data Systems
Although optimized for CW heating, the MHT1004GNR3 can serve as the final RF amplifier stage in 2.45 GHz ISM-band communication transmitters for industrial telemetry and short-range data links per the NXP datasheet 2450 MHz frequency specification. Its 15.2 dB gain reduces transmitter chain complexity, and the 65 V VDS rating provides the headroom for OFDM and other high-PAPR modulation schemes. Designers should note that the part is characterized for CW operation; pulsed modulation may require additional characterization beyond the datasheet figures. A circulator or isolator is recommended to protect against antenna mismatch transients.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MHT1004GNR3 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MHT1004N | MHT1004GN |
|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | OM-780-2 Gull-wing ceramic | OM-780-2 Gull-wing ceramic - same | OM-780-2 Gull-wing ceramic - same |
| Output Power (CW) | 280 W typical / 300 W rated | 280 W typical / 300 W rated | 280 W typical / 300 W rated |
| Operating Frequency | 2450 MHz | 2450 MHz | 2450 MHz |
| Typical Gain (2450 MHz) | 15.2 dB | 15.2 dB | 15.2 dB |
| Test Voltage | 32 V | 32 V | 32 V |
| Vds Maximum Rating | 65 V | 65 V | 65 V |
| Packaging Format | Tape & Reel (R3 suffix) | Tray | Tape & Reel (alternate orientation) |
Wichtigste Unterscheidungsmerkmale
- Tape-and-reel packaging variant for high-volume OEM assembly (vs. MHT1004N)
- Specific reel orientation (R3) for matching pick-and-place tooling (vs. MHT1004GN)
- Same-family LDMOS technology — proven across all variants (vs. MHT1000N (lower-power family member))
Designhinweise
Estimated: At 280 W CW output with 32 V supply and ~50% drain efficiency, the part dissipates approximately 280 W internally. The OM-780-2 ceramic flange package requires a chassis-mounted heatsink sized to keep junction temperature within the manufacturer's derating curve. A thermal compound (e.g., a high-performance silicone or indium-based interface) must be applied between the flange and heatsink to minimize thermal resistance. Forced-air cooling is typically required for continuous CW operation at full rated power.
Use a low-loss RF substrate (e.g., Rogers RO4003C or RO4350B) for the input and output matching networks. Keep gate and drain traces as short as possible to minimize parasitic inductance. The OM-780-2 package's leads sit above the PCB plane; ensure through-hole or surface-mount lead connections are designed for the specific lead geometry shown in the datasheet. Decoupling capacitors must be placed within 3 mm of the drain bias feed to prevent parasitic oscillation.
Do not exceed the 65 V maximum VDS rating — even brief transients from load mismatch or supply transients can cause permanent device failure. Always include a circulator or isolator between the MHT1004GNR3 and its load (especially with a plasma or variable-impedance heating load) to protect against reflected power. Gate bias must be sequenced properly (gate bias applied before drain bias) to avoid parametric oscillation during power-up. Refer to the NXP datasheet's bias sequencing guidelines.
Place the gate (input) and drain (output) matching networks on opposite sides of the package to maximize isolation between input and output. Use via-fencing (a row of grounded vias) along the input/output traces to suppress spurious coupling and prevent package-level oscillation. The flange source connection must be low-inductance; star-ground the source through the heatsink mounting bolts to the chassis. Harmonic filtering should be added at the output to meet regulatory emissions limits for ISM-band equipment.
Compliance-Informationen
RoHS compliant and lead-free per distributor listings (JESD-609 e3 tin finish). MSL 3 rating per JEDEC J-STD-020. Not AEC-Q100 qualified — this is an industrial RF power device, not automotive grade. REACH status not explicitly stated in the provided data; marked as unknown.
