MMRF1006HR5 - 1000W 50V RF Power MOSFET 10-500 MHz | NXP
Teilenummer: MMRF1006HR5 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $198.5 | $198,50 |
| 10 | $178.2 | $1.782,00 |
| 100 | $158 | $15.800,00 |
| 250 | $144.75 | $36.187,50 |
| 500 | $132.5 | $66.250,00 |
| 1.000 | $121.3 | $121.300,00 |
MMRF1006HR5 Übersicht
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that excels at high-current, high-frequency switching. RF power MOSFETs, like the MMRF1006HR5, are specifically engineered with lateral geometries to deliver high gain, high efficiency, and broadband operation in the high-frequency (HF), very-high-frequency (VHF), and ultra-high-frequency (UHF) bands. They sit at the top of the power management hierarchy alongside IGBTs and GaN HEMTs, but dominate pulsed/CW sub-gigahertz broadband amplifier designs due to their ruggedness, ease of impedance matching, and stable thermal performance.
Key features include 1000 W typical output power, 50 V drain-source breakdown voltage, 20 dB typical power gain at 450 MHz, and broadband matching from 10-500 MHz. The device is enhancement-mode and is specified for both CW and pulse operation, giving RF designers a single part for diverse duty-cycle requirements. The unmatched input and output allow flexible matching-network design across multiple frequency bands.
The MMRF1006HR5 uses NXP's high-voltage lateral MOSFET process, optimized for high peak-current handling and low parasitic capacitance. Its common-source dual-element topology enables push-pull or balanced amplifier configurations, while the rugged silicon die construction supports high VSWR (Voltage Standing Wave Ratio) load-mismatch tolerance - critical for radar and industrial heating applications where reflected power can damage lesser devices.
Typical applications include broadband HF/VHF/UHF communications amplifiers, pulsed avionics and military radar transmitters, industrial RF heating and drying equipment (27 MHz, 40 MHz, 81.36 MHz ISM bands), and Class C/D/E CW amplifier stages. The combination of broadband response and high power makes it suitable as a driver for higher-power devices in multi-stage transmitter chains.
Key design considerations include adequate thermal management via the metal-flanged NI-1230H ceramic package, careful board-level impedance matching for the broadband RF path, and consideration of the device's gate-drive requirements. Designers should also evaluate safe operating area (SOA) limits when operating at high VSWR. According to the NXP datasheet, the device is specified for operation at 50 V VDD with suitable heatsinking.
This page synthesizes distributor pricing across DigiKey, Mouser, Octopart, Xecor, and Nantian, plus drop-in alternatives and practical RF amplifier design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für MMRF1006HR5 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MMRF1006HSR5
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MMRF1008HR5
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MMRF1006HR5 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MMRF1006HR5 |
| Transistortyp | N-Channel Lateral MOSFET, Enhancement Mode |
| Configuration | Common Source, 2 Elements (Dual) |
| Drain-Source Voltage (VDS) | 50 V |
| Typical Output Power (Pout) | 1000 W |
| Frequency Range | 10 MHz to 500 MHz |
| Power Gain (Gp) at 450 MHz | 20 dB (typical) |
| Operating Mode | Pulsed and CW (continuous wave) |
| Gehäuse / Bauform | NI-1230H-4S (NI-1230-4H), ceramic with metal flange |
| Montageart | Surface Mount (SMT) with bolt-down flange |
| Package Outline | NI-1230-4H / NI-1230H-4S, AC-section variant |
| Input Matching | Unmatched (requires external matching network) |
| Output Matching | Unmatched (requires external matching network) |
| Technology | Silicon, Lateral N-Channel MOSFET |
| Terminal Position | Dual |
MMRF1006HR5 Pin-Konfiguration
| Pin 1 | DRAIN / RF OUT — Drain (RF output) terminal of dual-element MOSFET |
| Pin 2 | GATE / RF IN — Gate (RF input) terminal |
| Pin 3 | SOURCE — Source terminal (grounded through flange) |
| Pin 4 | FLANGE — Metal mounting flange (electrical source and thermal pad for bolt-down heatsink) |
Sicherer Arbeitsbereich - DC
Typische Anwendungen
MMRF1006HR5 ist geeignet für 6 Anwendungs: Broadband HF/VHF/UHF Communications Amplifier, Pulsed Radar Transmitter Final Stage, Industrial RF Heating and Drying, Class C/D/E CW RF Power Amplifier, Driver Stage for Higher-Power RF Amplifiers, Medical RF Ablation and Diathermy.
Broadband HF/VHF/UHF Communications Amplifier
The MMRF1006HR5's 1000 W output rating and 10-500 MHz broadband response make it a strong final-stage device for HF/VHF/UHF communications amplifiers used in tactical radios, base-station transmitters, and software-defined radio (SDR) transmitters. Placed at the PA output after a driver stage and broadband matching network, it delivers clean CW amplification across all sub-gigahertz communications bands with 20 dB typical gain at 450 MHz. Unlike narrowband RF power transistors tuned to a single frequency, the MMRF1006HR5's lateral MOSFET construction enables wideband impedance matching with a single part, cutting BOM cost. Per the NXP datasheet, the device is specified for both CW and pulse operation, simplifying amplifier design for multi-mode SDR platforms covering HF through UHF in a single hardware layout.
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Pulsed Radar Transmitter Final Stage
Pulsed avionics, weather, and military radar transmitters in the 10-500 MHz band use the MMRF1006HR5 as a final PA or driver stage because of its high peak power capability, broadband response, and rugged mismatch tolerance. Set up with 50 V drain bias and a broadband pulse-forming network, it generates the high-energy RF pulses needed for long-range target detection while surviving antenna VSWR excursions. According to the NXP datasheet, the device's lateral MOSFET process delivers excellent pulse fidelity and stable thermal performance under high duty-cycle radar PRF profiles. This makes it functionally similar to dedicated radar transistors while sharing the same family die used in communications PA chains, simplifying multi-mode radar/communications platform design.
Empfohlen
Industrial RF Heating and Drying
Industrial RF dielectric heating systems operating at the 13.56 MHz, 27.12 MHz, and 40.68 MHz ISM bands use the MMRF1006HR5 as the final high-power stage. Its 1000 W CW rating and broadband 10-500 MHz capability support continuous-material processing of plastics, textiles, wood, and food where the high VSWR of variable product loads would destroy less rugged devices. Paired with an external broadband matching network, it delivers stable CW power into dynamic loads - the NXP datasheet highlights high load-mismatch tolerance as a key design advantage. This makes the part attractive for RF welding, plasma generation, and industrial drying systems where downtime from device failure is the dominant operating cost.
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Class C/D/E CW RF Power Amplifier
The MMRF1006HR5 is well suited to high-efficiency switched-mode RF amplifier classes C, D, and E used in CW broadcast, particle accelerator driver, and AM transmitter applications. Operating at 50 V VDD with appropriate gate-bias and harmonic-filter networks, it can deliver close to 1000 W of CW output with efficiency levels that thermal-budget designer can manage via the metal NI-1230 flange. Compared to vacuum tubes historically used in HF broadcast, lateral MOSFETs like the MMRF1006HR5 offer smaller footprint, lower-voltage operation, and far simpler drive circuits, with broadband response covering multiple broadcast bands from a single matched design. Consult the NXP datasheet for Class C/D bias and thermal curves when designing.
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Driver Stage for Higher-Power RF Amplifiers
In multi-stage 1 kW-plus transmitter chains, the MMRF1006HR5 functions effectively as a driver stage for higher-power vacuum tubes or later-generation GaN-on-SiC final PAs. Its 20 dB typical gain at 450 MHz means a modest 50 W input signal can drive the device to its 1000 W output, providing convenient gain staging between low-level exciters and high-power finals. Used with a broadband inter-stage matching network, it preserves signal fidelity across 10-500 MHz - critical for software-defined exciters and agile-frequency transmitters. Per the NXP datasheet, the device's unmatched dual-element topology also enables push-pull and balanced amplifier configurations where high common-mode rejection is needed in defense and instrumentation chains.
Empfohlen
Medical RF Ablation and Diathermy
Medical RF ablation devices, electrosurgical generators, and diathermy/therapy systems operating in the 300-500 MHz band benefit from the MMRF1006HR5's continuous-wave stability and broadband response. Used in the final PA, it produces the controlled CW energy required for tissue ablation or therapeutic heating while surviving the variable load impedance presented by different tissue types - exactly the kind of mismatch-tolerant operation the NXP datasheet highlights as a strength. While the part is not specifically medical-grade certified, its 1000 W class and broadband UHF capability enable multi-procedure RF generator designs without device-specific redesign. Designers must still validate biocompatibility, isolation, and IEC 60601 compliance at the system level for any medical end product.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MMRF1006HR5 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MMRF1006HSR5 | MMRF1008HR5 | MRFE6VP6300HR5 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-1230H-4S (NI-1230-4H, ceramic flange) | NI-1230S-4S (vertical AC-section) | NI-1230H-4S (per Xecor equivalence) | NI-780-4 (different package, NOT drop-in) |
| Drain-Source Voltage (VDS) | 50 V | 50 V | 50 V | 125 V |
| Operating Mode | Pulsed and CW | Pulsed and CW | Pulsed and CW | Pulsed and CW |
| Configuration | Common Source, Dual Element | Common Source, Dual Element | Common Source, Dual Element | Common Source, Single (per Utmel listing) |
| Technology | Lateral N-Channel MOSFET, Silicon | Lateral N-Channel MOSFET, Silicon | Lateral N-Channel MOSFET, Silicon | Lateral N-Channel MOSFET, Silicon |
Wichtigste Unterscheidungsmerkmale
- Horizontal AC-section ceramic flange with broad 10-500 MHz bandwidth (vs. MMRF1006HSR5)
- 1000 W output at 50 V in same-family higher-power escalation (vs. MMRF1008HR5)
- 50 V VDS optimized for sub-500 MHz CW/pulsed broadband amplifiers (vs. MRFE6VP6300HR5)
Designhinweise
Estimated: at 1000 W CW output with 70% drain efficiency, DC input power is ~1430 W, dissipating ~430 W as heat in the silicon die. The NI-1230H ceramic-metal flange should be bolted to a forced-air or liquid-cooled heatsink; thermal grease or indium-preform interface material is recommended to keep junction temperature below the datasheet Tj(max) limit. Designers should also verify SOA at max VDD = 50 V and worst-case VSWR = infinity to ensure the part survives load-mismatch transients common in industrial RF heating and radar applications.
The NI-1230H package combines a ceramic body with a metal mounting flange; the PCB-side connections are leads exiting the ceramic, while the flange itself is the grounded thermal pad. Use a low-impedance microstrip or stripline PCB substrate (Rogers RO4350B or similar) for the RF input/output traces, and keep the gate-bias decoupling network within a few millimeters of the gate lead. A short, wide ground via-fence around the RF trace area helps suppress common-mode leakage.
Do not operate the MMRF1006HR5 without proper RF load protection; high VSWR can cause instantaneous device destruction. The datasheet requires a circulator, isolator, or load-mismatch protection circuit on the RF output of any broadband PA. Also verify gate-drive swing is consistent with the Vgs(th) and do not exceed absolute maximum ratings; check the datasheet for Vgs(max) and gate-leakage limits before designing the gate-bias network. Finally, ensure drain-supply decoupling uses low-ESR ceramic capacitors placed adjacent to the drain lead to suppress parasitic oscillations.
Compliance-Informationen
Compliance data not present in verified web data as of 2026-10-16. The MMRF1006HR5 is a high-power industrial RF MOSFET used in communications/radar/heating - AEC-Q100 (automotive) qualification is not typical. Confirm RoHS/REACH/lead-free status directly with NXP environmental compliance documents or your distributor before designing into RoHS-restricted end products.
