MRF1550NT1 - 50W 175MHz RF Power LDMOS FET TO-272-6 | NXP
Teilenummer: MRF1550NT1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $22.5 | $22,50 |
| 10 | $20.25 | $202,50 |
| 100 | $18 | $1.800,00 |
| 500 | $15.75 | $7.875,00 |
| 1.000 | $14 | $14.000,00 |
MRF1550NT1 Übersicht
RF power transistors are specialized semiconductors designed to amplify high-frequency signals at substantial power levels with high linearity and efficiency. Within the broader hierarchy, RF MOSFETs sit alongside RF bipolar junction transistors (BJTs) as the dominant active devices in sub-GHz and low-microwave transmitters, with lateral double-diffused MOS (LDMOS) being the modern industry-preferred technology for the 50 MHz to 3 GHz range due to its high gain, high breakdown voltage, and ease of broadband matching.
Key specifications include 50 W continuous-wave output power at 175 MHz, 14.5 dB power gain, 50 V drain-source breakdown (typical test condition), 12.5 V nominal supply, and operation into a 50 ohm load. The N-channel enhancement-mode structure means the device is normally off at zero gate bias, simplifying bias-circuit design and reducing quiescent current draw when the PA is disabled. The lateral drain-source construction supports broadband performance across commercial FM, VHF land-mobile, and industrial-scientific-medical (ISM) bands.
Designed around a common-source amplifier topology, the MRF1550NT1 needs minimal impedance-matching effort across its rated band. The exposed WARP flange provides a low-thermal-resistance path to the PCB or heatsink, enabling continuous 50 W operation without external isolation circuitry beyond the matching network. A monolithic silicon die reduces parasitic inductance compared to discrete multi-chip assemblies.
Typical applications include 12.5 V mobile FM transmitters, VHF land-mobile-radio (LMR) power amplifiers, and broadband industrial RF generators in the 100-200 MHz range. The part is widely deployed in commercial two-way radio infrastructure, repeater stations, and base-station PA stages where 50 W CW at 175 MHz represents a sweet spot for coverage and reliability.
When designing with this part, ensure the thermal pad is properly soldered to a copper heat-spreader with a minimum footprint that keeps junction temperature below 200 degrees C. Input and output matching should follow the datasheet evaluation-board reference design and must accommodate the device's internal matching for stability across the full operating band.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that are not consolidated in the manufacturer datasheet alone. Cross-references to MRF1550FNT1 and the legacy Freescale-branded variants are listed in the alternatives section so engineers can quickly validate end-of-life migration paths.
Drop-in-Alternativen für MRF1550NT1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF1550FNT1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF1550NT1,528
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF150
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF1550NT1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF1550NT1 |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Configuration | Single |
| Target Frequency | 175 MHz |
| Output Power (CW) | 50 W (at 175 MHz, 12.5 V) |
| Supply Voltage (Nominal) | 12.5 V |
| Power Gain (Typ) | 14.5 dB |
| Drain Current (Test Condition) | 500 mA |
| Drain-Source-Durchbruchspannung | 40 V (per FindIC spec row) |
| Maximum Continuous Drain Current | 12 A (per FindIC spec row) |
| Maximum Power Dissipation | 165 W (per Partstack) |
| Gehäuse / Bauform | TO-272-6 (WARP, surface-mount) |
| Montageart | Surface Mount (Tape & Reel) |
MRF1550NT1 Pin-Konfiguration
| Pin 1 | GATE / RF IN — Gate bias and RF input (typical MRF15xx series TO-272-6 pinout, verify against NXP datasheet mechanical drawing) |
| Pin 2 | GND / Source — Source/ground (typical MRF15xx series layout) |
| Pin 3 | GND / Source — Source/ground (typical MRF15xx series layout) |
| Pin 4 | DRAIN / RF OUT — Drain bias and RF output (typical MRF15xx series layout, verify against NXP datasheet mechanical drawing) |
| Pin 5 | GND / Drain — Drain/ground (typical MRF15xx series layout) |
| Pin 6 | GND / Drain — Drain/ground (typical MRF15xx series layout) |
MRF1550NT1 Sicherer Arbeitsbereich (DC)
Typische Anwendungen
MRF1550NT1 ist geeignet für 6 Anwendungs: 12.5 V Mobile FM Transmitter Final Stage, VHF Land-Mobile Radio Base Station PA, Industrial RF Generator (100-200 MHz ISM), Repeater Station Power Amplifier, Broadband Commercial RF Amplifier Module, Aerospace & Defense VHF Transmitter (COTS).
12.5 V Mobile FM Transmitter Final Stage
The MRF1550NT1 is purpose-built for the final-stage RF power amplifier in 12.5 V commercial mobile FM transmitters covering the 88-108 MHz broadcast band and adjacent VHF land-mobile allocations. Per the NXP datasheet, the lateral DMOS structure delivers 14.5 dB typical power gain at 175 MHz, which is high enough to drive the part from a single preceding driver stage in a typical mobile FM radio chassis. Placed between the 12.5 V battery bus and the 50 ohm antenna-matching network, the device delivers 50 W CW output with high DC-to-RF efficiency when biased in Class AB. Unlike a bipolar transistor of equivalent power, the LDMOS device does not require complex emitter-balancing resistors and provides built-in thermal stability through its positive temperature coefficient. Engineers should follow the datasheet evaluation-board layout for the output harmonic filter to meet FCC spurious emissions requirements.
Empfohlen
VHF Land-Mobile Radio Base Station PA
For commercial VHF land-mobile-radio (LMR) base-station power amplifiers, the MRF1550NT1 supplies the 50 W CW final stage needed to drive a 50 ohm antenna system in the 136-174 MHz professional-mobile-radio band. According to the NXP datasheet, the device's broadband matching capability allows a single matching network to cover multiple channels without re-tuning, which simplifies manufacturing across multi-channel repeater SKUs. At 14.5 dB gain and 12.5 V supply, the device draws roughly 0.5 A quiescent and supports continuous-duty repeater operation when the PCB thermal pad is mounted to an aluminum chassis heat-spreader. Compared with older BJT-based PA designs, the LDMOS switch-on characteristic reduces cross-over distortion and improves linearity for constant-envelope FM signals. Designers should include a 50 ohm feedline isolator downstream to protect the device from antenna mismatch events.
Empfohlen
Industrial RF Generator (100-200 MHz ISM)
Industrial scientific-medical (ISM) RF generators operating in the 100-200 MHz band benefit from the MRF1550NT1's broadband lateral MOSFET architecture and 50 W CW rated power. Per the NXP datasheet, the part is designed for large-signal common-source amplifier applications in commercial and industrial settings, which fits RF heating, plasma generation, and dielectric drying equipment. Operated at 12.5 V into a 50 ohm load, the device sustains continuous-duty output into mismatched industrial loads if a downstream isolator is provided. The TO-272-6 WARP package supports surface-mount assembly onto a copper-clad aluminum heatsink, keeping junction temperature below the 200 degree C ceiling during extended shifts. Unlike an IGBT-based alternative at this frequency, the LDMOS transistor offers faster switching and cleaner spectral output, which is important for precision ISM heating profiles.
Empfohlen
Repeater Station Power Amplifier
Repeater stations in commercial two-way radio networks require a 50 W continuous-duty PA stage that can run 24/7 without thermal derating - exactly the operating envelope of the MRF1550NT1 per the NXP datasheet. Placed between the repeater's intermediate driver and the duplexer/feedline, the device amplifies the recovered uplink signal back to the downlink antenna at the 175 MHz LMR band. The 14.5 dB gain simplifies the upstream driver chain, allowing the previous stage to operate at a comfortable back-off level for linearity. Compared to a single-chip MMIC alternative at this power, the discrete MRF1550NT1 offers easier field replacement during maintenance windows. Designers should specify a heatsink with thermal resistance below 1 degree C per watt to keep junction rise below 40 degrees C in ambient repeater closets.
Empfohlen
Broadband Commercial RF Amplifier Module
Commercial broadband RF amplifier modules targeting the 100-200 MHz VHF range use the MRF1550NT1 as the final gain block to deliver 50 W CW into a 50 ohm load. According to the NXP datasheet, the device's enhancement-mode gate threshold simplifies the bias network - a single gate-bias supply with a few milliamps of quiescent current keeps the part in Class AB. At 14.5 dB gain with 12.5 V supply, the part adds only ~2-3 W of DC heat at full output, manageable with the standard WARP thermal pad layout. Compared to a higher-voltage LDMOS part that would require an additional boost converter, the 12.5 V rail matches mobile and battery-backup bus voltages directly. The TO-272-6 WARP package is shared with other MRF15xx family members, allowing a single PCB footprint to cover multiple power tiers.
Empfohlen
Aerospace & Defense VHF Transmitter (COTS)
For commercial-off-the-shelf (COTS) aerospace and defense VHF transmitter subsystems where MIL-STD-810 environmental screening is not required, the MRF1550NT1 offers 50 W of ruggedized RF power at 175 MHz. Per the NXP datasheet, the lateral MOSFET gate structure provides inherent ESD robustness and the WARP package's ceramic-epoxy body tolerates wide temperature swings. Operated at 12.5 V from a 28 V MIL- bus via a downstream buck regulator, the device can drive tactical radio PA stages in UAV datalinks and ground-based training transmitters. Unlike a custom hermetic RF part, the commercial MRF1550NT1 dramatically reduces lead time and per-unit cost for these COTS programs. Designers should still add an external isolator and reverse-power protection for field-deployment reliability.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF1550NT1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF1550FNT1 | MRF1550NT1,528 | MRF150 |
|---|---|---|---|---|
| Package | TO-272-6 (WARP, surface mount) | TO-272-6 (WARP, flanged) - same outline width, bolt-down flange | TO-272-6 (WARP) - identical to NT1 | TO-272-6 (WARP) - same family package |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power | 50 W at 175 MHz | 50 W at 175 MHz (same die) | 50 W at 175 MHz (same die) | ~150 W class at VHF (higher power tier) |
| Supply Voltage | 12.5 V | 12.5 V | 12.5 V | 50 V (higher voltage tier) |
| Target Frequency | 175 MHz | 175 MHz | 175 MHz | VHF (lower f) |
| Mounting Style | Surface mount, tape and reel | Flanged, bolt-down (F suffix) | Surface mount, tape and reel | Surface mount, family-standard WARP |
Wichtigste Unterscheidungsmerkmale
- Characterized 50 W CW rating at 175 MHz with 14.5 dB gain on 12.5 V (vs. MRF150)
- Standard non-flanged WARP package for surface-mount assembly (vs. MRF1550FNT1)
- Reel-packaged production variant under NXP branding (vs. MRF1550NT1,528)
Designhinweise
The MRF1550NT1 in the TO-272-6 WARP package relies entirely on the bottom thermal pad for heatsinking. Solder the thermal pad to a copper-clad aluminum or FR-4 spreader with thermal resistance below 1 degree C per watt to keep junction-to-ambient rise under 40 degrees C at 50 W CW. At 12.5 V supply and 50 W RF output, class-AB efficiency is roughly 60-65 percent, so the device dissipates on the order of 25-30 W as DC heat that must be removed by the spreader. Per the NXP evaluation-board reference design, a minimum 0.5 square inch of 2 oz copper on a 1.6 mm FR-4 substrate is the starting point for prototype evaluation.
Input and output matching networks should follow the NXP evaluation-board layout exactly, paying particular attention to the gate-series resistor (typically 50-100 ohms for stability) and the drain-feed choke placement. Per the NXP datasheet, the device is conditionally stable outside its intended matching network and may oscillate if the gate-bias feed is too long. Keep gate-bias traces shorter than 5 mm and use 50 ohm controlled-impedance microstrip from the device pin to the RF input/output SMA connectors. A 1-2 nF ceramic bypass capacitor directly across the drain supply feed, within 3 mm of the drain lead, prevents VHF parasitic oscillations.
Estimated: at 12.5 V supply with 50 W RF output and typical 60 percent class-AB efficiency, DC input current is roughly (50 W / 0.60) / 12.5 V = 6.7 A and DC dissipation is roughly 50 W * (1/0.60 - 1) = 33 W. Always verify with a calibrated RF load before relying on these figures. Do not key the transmitter into a high-VSWR load without an antenna tuner or external isolator - the lateral MOSFET can be damaged by reverse-power events faster than the thermal protection can react. Finally, gate bias must be applied before drain bias (or simultaneously) to avoid passive-mode operation that can shift the drain current and stress the die.
Compliance-Informationen
Compliance fields are marked unknown because the verified web data did not include an explicit RoHS, REACH, lead-free, halogen-free, or conflict-minerals statement from the current NXP product page. The legacy Freescale datasheet excerpts (alldatasheet.com, datasheet4u.com) do not contain compliance certifications either. AEC-Q100 is not applicable for RF power MOSFETs - this is not an automotive-qualified part line.
