MRF19045LSR5 - 9.5W RF Power MOSFET, 1930 MHz, NI-400S-240 | NXP
Teilenummer: MRF19045LSR5 ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $48.75 | $48,75 |
| 10 | $42.3 | $423,00 |
| 100 | $36.85 | $3.685,00 |
| 500 | $31.2 | $15.600,00 |
| 1.000 | $27.45 | $27.450,00 |
MRF19045LSR5 Übersicht
An LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) RF power transistor is a specialized MOSFET architecture in which the drift region is laterally diffused to support high breakdown voltage, high RF output power, and excellent thermal performance in a single die. RF power transistors sit within the broader hierarchy of power management semiconductors, and LDMOS is the dominant technology in macro-cell base-station power amplifiers up to approximately 3.8 GHz thanks to its high gain, high efficiency, and stable long-term RF performance.
Key specifications of the MRF19045LSR5 include a drain-source voltage rating of 65 V, an output power of 9.5 W at the rated test condition, 14.5 dB minimum gain, and operation across 1900 MHz to 2000 MHz. The lateral MOSFET structure provides high input impedance and ease of broadband matching, while the air-cavity ceramic NI-400S-240 package offers low thermal resistance suitable for continuous-wave (CW) and modulated RF operation.
Typical applications for the MRF19045LSR5 include TDMA and CDMA driver or final-stage amplifiers in 1.9 GHz to 2.0 GHz base stations, multicarrier amplifier (MCPA) lineups, and PCS/PCN repeater systems. The part functions as a Class AB push-pull or single-ended gain block, biased from a 26 V to 28 V DC supply and matched externally with microstrip or lumped elements.
When designing with this device, ensure the bias sequence supplies gate voltage before drain voltage, provides adequate heat-sinking through the flanged ceramic body, and confirms RF load-pull matching for the chosen modulation format. This page synthesizes distributor pricing, drop-in alternatives, and practical RF design notes not collected together in any single datasheet or catalog page.
Drop-in-Alternativen für MRF19045LSR5 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF19045LSR3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF19045LR5
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF19045LSR5 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP USA Inc. (formerly Freescale) |
| Part Number | MRF19045LSR5 |
| Transistortyp | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency | 1.93 GHz (operating range 1900-2000 MHz) |
| Gain | 14.5 dB (minimum, at rated test condition) |
| Test Voltage (Drain) | 26 V |
| Test Current (Quiescent) | 550 mA |
| Output Power (Pout) | 9.5 W |
| Rated Drain-Source Voltage | 65 V |
| Gehäuse / Bauform | NI-400S-240 (ceramic air-cavity flanged) |
| Supplier Device Package | NI-400S-240 |
| Montageart | Chassis / Flange Mount |
| Operating Mode | Class AB (typical) |
| Target Applications | PCN and PCS base station TDMA, CDMA, multicarrier amplifiers |
| Part Status | Obsolete (per datasheets.com) |
MRF19045LSR5 Pin-Konfiguration
| Pin 1 | Gate — RF gate input / DC gate bias terminal |
| Pin 2 | Drain — RF drain output / DC drain bias terminal |
| Pin Flange | Source / Ground — Metal flange mounting surface, used as source and thermal ground |
MRF19045LSR5 DC Sicherer Arbeitsbereich
Typische Anwendungen
MRF19045LSR5 ist geeignet für 6 Anwendungs: PCS Base Station Final-Stage Power Amplifier, PCS/PCN Multicarrier Power Amplifier (MCPA), 1900 MHz Cellular Repeater / Booster, CDMA Driver Amplifier in Macro-Cell Radios, Test & Measurement RF Test Amplifier, Defense / Aerospace Band-Specific PA.
PCS Base Station Final-Stage Power Amplifier
The MRF19045LSR5's 9.5 W output power and 14.5 dB minimum gain at 1.93 GHz make it a natural fit as the final stage in a 1900 MHz to 2000 MHz PCS base-station PA. Driven from a preceding LDMOS driver such as the NXP MRF19030 and biased at 26 V / 550 mA, the device delivers the linear power margin required for TDMA and CDMA modulation while remaining thermally manageable on the NI-400S-240 flange. Unlike smaller SMD parts, the ceramic flanged package simplifies board-level thermal design at the backplane of macro-cell radios.
Empfohlen
PCS/PCN Multicarrier Power Amplifier (MCPA)
Multicarrier amplifier lineups demand high linearity and thermal headroom so that intermodulation products stay out of the adjacent channel. The MRF19045LSR5's lateral LDMOS structure and 65 V drain rating give the bias headroom needed to handle the instantaneous envelope peaks of two or three summed carriers in the 1930 MHz to 1990 MHz block. In an MCPA, it is typically used in a balanced push-pull configuration with a 3 dB hybrid and preceded by a digital predistortion (DPD) loop that linearises the device across signal envelope variations.
Empfohlen
1900 MHz Cellular Repeater / Booster
In-building and outdoor repeaters for the 1900 MHz band require a compact, reliable final-stage RF transistor with predictable gain and thermal behaviour. The MRF19045LSR5 in its NI-400S-240 ceramic flange offers 14.5 dB gain at 1.93 GHz, which simplifies the gain budgeting of a single-band 1900 MHz repeater. Its bolt-down flange allows direct mounting to the repeater chassis, removing the need for an additional thermal interface material that smaller SMD parts would require.
Empfohlen
CDMA Driver Amplifier in Macro-Cell Radios
CDMA macro-cell radios require careful gain staging to maintain the carrier-to-noise ratio and ACPR budget across the 1.25 MHz bandwidth. The MRF19045LSR5 can serve as the driver stage in such radios, providing 14.5 dB gain and 9.5 W output at the 26 V bias point to push the final LDMOS into compression only at the top of the modulation envelope. The same NI-400S-240 flange used across the MRF19045 family lets the driver and final stages share a single heatsink machining pattern.
Empfohlen
Test & Measurement RF Test Amplifier
Engineers building ATE-grade 1.9 GHz RF stimulus chains can use the MRF19045LSR5 as a low-distortion power block to exercise device-under-test receivers and filters. Its 9.5 W output level is sufficient to characterise PCS duplexers and SAW filters with realistic power levels, while its narrow-band gain response at 1.93 GHz keeps harmonics and out-of-band noise at manageable levels. The ceramic package provides repeatable RF performance lot to lot, which is important when test results need to be correlated across systems.
Empfohlen
Defense / Aerospace Band-Specific PA
Defense and aerospace sub-systems in the 1900 MHz to 2000 MHz band, including tactical radios and electronic-warfare jammers, often require the high reliability of a ceramic air-cavity LDMOS. The MRF19045LSR5's hermetic NI-400S-240 package, 65 V breakdown, and predictable 14.5 dB gain at 1.93 GHz make it suitable as a matched final stage in custom MIL-spec amplifier assemblies. Designers should perform additional qualification (vibration, thermal cycling) beyond the commercial datasheet envelope when targeting these end markets.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF19045LSR5 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF19045LSR3 | MRF19045LR5 |
|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-400S-240 | NI-400S-240 | NI-400S-240 |
| Frequency | 1.93 GHz (1900-2000 MHz) | 1.93 GHz (1900-2000 MHz) | 1.93 GHz (1900-2000 MHz) |
| Output Power | 9.5 W | 9.5 W | 9.5 W |
| Gain (min) | 14.5 dB | 14.5 dB | 14.5 dB |
| Test Voltage | 26 V | 26 V | 26 V |
| Drain-Source Voltage Rating | 65 V | 65 V | 65 V |
| Quiescent Test Current | 550 mA | 550 mA | 550 mA |
| Packaging Code | SR5 (tape & reel, 250/reel) | SR3 (smaller reel quantity) | R5 (tray / non-S suffix) |
Wichtigste Unterscheidungsmerkmale
- Ceramic air-cavity flange with proven base-station reliability (vs. A2I09VD030N)
- Same family, identical electrical specs (vs. MRF19045LSR3)
- Optimised for 1900-2000 MHz PCS/PCN band (vs. Generic LDMOS)
Designhinweise
The NI-400S-240 ceramic flange should be bolted directly to a copper or aluminium heat spreader with a recommended torque of approximately 0.5 to 0.8 N.m. Thermal compound (e.g. CGX or comparable) between the flange and the heatsink lowers the junction-to-case thermal resistance and prevents localised hot spots. Estimated: at 26 V bias, 550 mA quiescent current, and 9.5 W RF output with roughly 50% drain efficiency, internal dissipation is on the order of 9-10 W. Without adequate cooling, junction temperature can exceed 200 C and trigger thermal shutdown or permanent degradation.
Always apply gate bias before applying drain voltage; the MRF19045LSR5 will self-oscillate if the drain is energised while the gate is at 0 V, which can destroy the device. Use a sequencing controller or a gate-pull-down resistor to keep the part off during power-up. Also ensure the drain supply includes a fast-acting overcurrent clamp sized below the Id-mas rating printed on the datasheet.
Layout the input and output matching networks as close to the package leads as possible using 50 ohm microstrip on a low-loss RF substrate (e.g. Rogers RO4350). Keep the gate and drain traces electrically isolated to prevent feedback and spurious oscillations. The NI-400S-240 flange pocket should provide a continuous ground seam around the ceramic body, and source bond-wires are not user-accessible because grounding is via the flange.
Compliance-Informationen
RoHS and lead-free status not provided in the verified web data; the value is flagged [DATA_NEEDED: RoHS compliance status] in the specifications section. The MRF19045LSR5 is a ceramic air-cavity RF power device, not an automotive-qualified part, so AEC-Q100 does not apply.
