MRF5S21090HR5 - 19W LDMOS RF Power Transistor, 2.11GHz | NXP
Teilenummer: MRF5S21090HR5 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $34.2 | $342,00 |
| 100 | $29.75 | $2.975,00 |
| 500 | $25.4 | $12.700,00 |
| 1.000 | $21.95 | $21.950,00 |
MRF5S21090HR5 Übersicht
An LDMOS RF power transistor is a specialized power MOSFET structure optimized for RF amplification rather than switching. The lateral drain structure and thick gate oxide give LDMOS high breakdown voltage, high gain at RF frequencies, and excellent thermal stability, which is why LDMOS dominates the base-station RF power amplifier (PA) market from 1 GHz to 4 GHz. Within the hierarchy, MRF5S21090HR5 belongs to RF power transistor -> RF MOSFET -> discrete semiconductor -> power amplifier building block.
Key differentiating features include 14.5 dB small-signal gain at 2.11 GHz under NXP-specified test conditions, a 28 V typical drain bias aligned with standard wireless base-station rails, and the NI-780H-2L flange-mount ceramic package that provides low thermal resistance to the system heatsink. The device is part of NXP's HV5 LDMOS family, which is widely deployed in W-CDMA, LTE, and WiMAX pico-cell and micro-cell PAs where linearity and ruggedness are required. The high drain-to-source breakdown and built-in drain ESD protection support robust Class AB operation.
Typical applications include 2.1 GHz UMTS/W-CDMA and LTE small-cell base-station power amplifiers, 2.11 GHz industrial-scientific-medical (ISM) band amplifiers, driver stages for higher-power macro-cell PAs, and avionics/aerospace telemetry links operating near 2.1 GHz. The 19 W P1dB-class output makes it suitable for final-stage or driver use in pico-cell transmitters.
When designing with this part, engineers should observe the drain bias sequencing rules of LDMOS (apply gate voltage before drain voltage to avoid parametric drift), maintain the heatsink flatness and torque specified by NXP, and ensure the input/output matching networks target 50 ohms at 2.11 GHz. The flange-mount package requires screw-down mounting with proper thermal interface material for rated power dissipation.
This page consolidates NXP datasheet specifications, distributor pricing, drop-in same-package alternatives, and PCB-level design considerations not found in the standalone datasheet.
Drop-in-Alternativen für MRF5S21090HR5 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF5S21090HR3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF5S19090HR3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF5S21090HR5 Grenzwerte & elektrische Eigenschaften
| Transistortyp | LDMOS, N-Channel |
| Technology | Laterally Diffused MOS (LDMOS) |
| Drain-Source Voltage (Vdss) Rated | 65 V |
| Operating Drain Voltage (Typical) | 28 V |
| Drain Current Rating | 10 uA (leakage) |
| Frequency of Operation | 2.11 GHz |
| Small-Signal Gain | 14.5 dB at 2.11 GHz |
| Output Power (Pout) | 19 W |
| Gehäuse | NI-780H-2L (SOT-957A) ceramic, flange-mount |
| Montageart | Chassis / Flange Mount with screws |
| Input Impedance (typical) | 50 ohm (matched) |
| Output Impedance (typical) | 50 ohm (matched) |
| Test Conditions | 28 V, 2.11 GHz, CW or pulsed per NXP datasheet |
MRF5S21090HR5 Pin-Konfiguration
| Pin 1 | GATE (Input) — RF input / gate bias, 50-ohm matched at 2.11 GHz |
| Pin 2 | DRAIN (Output) — RF output / drain bias (typically 28 V), 50-ohm matched at 2.11 GHz |
| Pin FLANGE | SOURCE / GROUND — Source connection and main thermal path; mount to heatsink |
DC Sicherer Arbeitsbereich
Typische Anwendungen
MRF5S21090HR5 ist geeignet für 6 Anwendungs: 2.11 GHz UMTS/W-CDMA Small-Cell Base-Station PA, 2.1 GHz LTE Pico-Cell Power Amplifier Driver, 2.1 GHz Industrial/Scientific/Medical (ISM) Amplifier, Aerospace Telemetry / UAV Downlink PA, Driver Stage for Higher-Power Macro-Cell PAs, 2.1 GHz RF Test Equipment Power Stage.
2.11 GHz UMTS/W-CDMA Small-Cell Base-Station PA
The MRF5S21090HR5's 19 W output power at 2.11 GHz with 14.5 dB gain and 28 V bias makes it directly suited as a final-stage LDMOS PA for UMTS and LTE small-cell base stations operating in the 2.11 GHz downlink. Placed between the driver stage and the duplexer, it delivers the linearity and ruggedness required for Class AB operation with WCDMA modulation. Compared with GaN alternatives, the LDMOS part keeps BOM cost low while still meeting 3GPP spectral emission masks. Heatsink flatness and screw torque must follow NXP's NI-780H-2L guidelines to maintain rated junction temperature.
Empfohlen
2.1 GHz LTE Pico-Cell Power Amplifier Driver
In LTE pico-cell designs, the MRF5S21090HR5 can serve as a high-power driver stage feeding a final GaN or LDMOS amplifier. Its 14.5 dB gain at 2.11 GHz with 28 V supply delivers sufficient drive level to push the final stage into compression while preserving linearity. The NI-780H-2L flange-mount package enables chassis-level cooling and simplifies mechanical integration into compact pico-cell enclosures. Designers should target 50-ohm input and output matching at 2.11 GHz and observe NXP's bias sequencing (gate first, drain second) to avoid long-term drift.
Empfohlen
2.1 GHz Industrial/Scientific/Medical (ISM) Amplifier
Industrial-scientific-medical (ISM) and telemetry links operating near 2.1 GHz benefit from the MRF5S21090HR5's 19 W continuous-wave rating and 28 V bias. The N-channel LDMOS structure tolerates high VSWR, which is important for ISM applications with variable antenna loads. Used in CW or pulsed modes, the part delivers stable gain and ruggedness at 2.11 GHz. The flange-mount ceramic package allows direct attachment to chassis heatsinks common in industrial RF cabinets and outdoor enclosures.
Empfohlen
Aerospace Telemetry / UAV Downlink PA
Unmanned aerial vehicle (UAV) and aerospace telemetry links operating near 2.1 GHz can use the MRF5S21090HR5 as the final PA stage for medium-range downlink transmitters. The 19 W output supports link budgets of several kilometers at 2.11 GHz with a modest patch or helical antenna. The ceramic flange-mount package provides vibration tolerance and thermal stability required in airborne and UAV environments. Designers should evaluate MIL-STD-810 vibration profiles and apply additional mechanical staking per NXP aerospace guidelines.
Empfohlen
Driver Stage for Higher-Power Macro-Cell PAs
For macro-cell base stations that need more than 19 W at 2.11 GHz, the MRF5S21090HR5 is well suited as a driver stage feeding 60 W to 100 W final LDMOS or GaN PAs. Its 14.5 dB gain and 19 W saturated output provide sufficient drive to push the final stage into Class AB compression while preserving linearity for LTE and WCDMA signals. The same NI-780H-2L package family as the higher-power NXP MRF7S-series devices simplifies mechanical design and heatsink reuse across the driver-to-final chain.
Empfohlen
2.1 GHz RF Test Equipment Power Stage
Laboratory and production RF test equipment operating at 2.11 GHz can use the MRF5S21090HR5 as a stable, repeatable 19 W power stage for ATE stimulus paths and EMC test amplifiers. The N-channel LDMOS device offers consistent gain versus temperature and frequency, which simplifies calibration routines. The flange-mount package supports direct integration into bench-top amplifier enclosures with standard thermal interface materials. Designers should add circulator or isolator protection at the output to handle load mismatch during automated test cycles.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF5S21090HR5 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF5S21090HR3 | MRF5S19090HR3 |
|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780H-2L (SOT-957A) | NI-780H-2L (SOT-957A) - same | NI-780H-2L (SOT-957A) - same |
| Frequency | 2.11 GHz | 2.11 GHz | 1.9 GHz |
| Output Power | 19 W | 19 W | 19 W |
| Drain Bias (Typ) | 28 V | 28 V | 28 V |
| Vdss Rated | 65 V | 65 V | 65 V |
| Technology | LDMOS N-Channel | LDMOS N-Channel | LDMOS N-Channel |
| Mounting | Flange-mount | Flange-mount - same | Flange-mount - same |
| Pin-Compatible (Drop-in) | Baseline | Yes (same die/package family) | Same package, different frequency retune |
Wichtigste Unterscheidungsmerkmale
- Optimized specifically for the 2.11 GHz UMTS/W-CDMA band (vs. MRF5S19090HR3 (1.9 GHz variant))
- NI-780H-2L (SOT-957A) flange-mount ceramic package (vs. Plastic-packaged RF MOSFETs in the same power class)
- NXP HV5 LDMOS family with proven 2.1 GHz reliability (vs. Generic 28 V RF MOSFETs from other vendors)
Designhinweise
The NI-780H-2L flange-mount package requires screw-down mounting to a flat heatsink with thermal interface material. Apply the torque specified in the NXP datasheet (typically 1.0-1.5 N-m) to avoid cracking the ceramic. Estimated: at 19 W RF output with 30 percent drain efficiency at 28 V, internal dissipation is roughly 9 W; without a heatsink of < 1 C/W thermal resistance, the junction will exceed 200 C. Use a copper or aluminum heatsink with at least 100 cm square of surface area in free air for 9 W continuous dissipation.
RF input and output traces must be 50-ohm microstrip or coplanar waveguide on the chosen PCB substrate, with the ground plane stitched densely around the RF leads. Place matching networks as close to the gate and drain leads as physically possible to minimize parasitic inductance. The flange ground must connect to the PCB ground with multiple vias around the package cutout. Use low-loss substrate such as Rogers RO4350B for 2.11 GHz work.
LDMOS RF transistors require gate voltage applied BEFORE drain voltage during turn-on, and removed AFTER drain voltage during turn-off, to prevent parametric drift and gate oxide stress. Exceeding the 65 V Vdss rating will permanently damage the device. Do not operate the MRF5S21090HR5 into an open or short circuit at the output without proper matching; use a circulator or isolator when driving unknown loads. Always sequence gate bias first, then drain bias, with appropriate timing.
At 2.11 GHz with 28 V drain and 19 W RF output, the typical quiescent drain current for Class AB bias is 100-200 mA, with peak drain current reaching 3-4 A at full RF drive. Use a low-inductance drain feed network with adequate RF bypass capacitance (typically 100 pF, 1 nF, 10 uF in parallel) close to the drain lead. The gate bias network should be heavily filtered to prevent RF leakage into the bias supply, which would modulate the gain and degrade linearity.
Compliance-Informationen
Compliance status not explicitly stated in the provided web data for MRF5S21090HR5; verify against the NXP product page or PCN documents before placing volume orders. AEC-Q100 not applicable as this is an RF power transistor, not an automotive-qualified IC.
