MRF6P18190HR6 - 1.88GHz 44W RF Power MOSFET | NXP
Teilenummer: MRF6P18190HR6 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $87.5 | $875,00 |
| 50 | $79.95 | $3.997,50 |
| 100 | $74.2 | $7.420,00 |
| 250 | $68.8 | $17.200,00 |
MRF6P18190HR6 Übersicht
What is an RF power MOSFET? An RF power MOSFET is a metal-oxide-semiconductor field-effect transistor optimized to deliver high output power at radio frequencies. It belongs to the broader taxonomy of discrete semiconductors -> power transistors -> RF transistors -> lateral N-channel MOSFETs -> W-CDMA base-station PAs. Lateral MOSFET geometries keep drain-to-source capacitance low and support high transition frequencies, making them the dominant architecture for cellular base-station power amplifiers from 700 MHz to 3 GHz.
Key features include 44 W typical average output power under 2-carrier W-CDMA excitation, 15.9 dB power gain at 1.88 GHz, 28 V drain bias for class-AB efficiency, and a Ni-1230 ceramic- flange package that screws directly to a heatsink for thermal management. The 1.88 GHz tuned band makes the device a direct fit for the DCS-1800 / PCS-1900 uplink, IMT-2000, WLL, and PCN segments historically served by the NXP/Freescale MRF6 family.
Technically, the part uses NXP's later-generation high-frequency process to achieve simultaneously high gain and ruggedness against 10:1 VSWR mismatch. The NI-1230 package has two bolt-down leads plus a flanged ceramic body that also serves as the drain/thermal pad, simplifying board layout in Doherty and class-AB implementations.
Typical applications include W-CDMA 2-carrier base station power amplifiers (1805-1880 MHz), TDMA and CDMA driver stages, multicarrier amplifier MCPA modules, and cellular/DCS infrastructure power stages rated from 27 to 32 V rail. The device is class-AB biased, so a bias-sequencer and a circulator/isolator are typically used on the RF path.
When designing in the MRF6P18190HR6, place 50 Ω microstrip transforms at both gates and drains, ensure the heatsink flange mounting torque meets the datasheet recommendation, and add gate-source protection zener/ESD diodes because the lateral gate oxide is sensitive to overvoltage.
This page synthesizes distributor pricing and stock, drop-in pin-compatible alternatives, and practical RF PA design notes that complement the manufacturer datasheet.
Drop-in-Alternativen für MRF6P18190HR6 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF6S19100HR6
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6VP18010HR6
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF18060ALSR3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF6S18010NR6
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
PTF180101M-V1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6P18190HR6 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF6P18190HR6 |
| Device Type | RF Power MOSFET, N-Channel Enhancement-Mode Lateral |
| Frequency Band | 1805 MHz to 1880 MHz |
| Test Frequency | 1.88 GHz |
| Drain Voltage (Vdd) | 28 V (typ.) |
| Output Power (Pout, avg, 2 x W-CDMA) | 44 W |
| Power Gain (Gp) | 15.9 dB at 1.88 GHz |
| Drain Efficiency | see datasheet typical performance curve |
| Gehäuse | NI-1230 ceramic, single-flange bolt-down |
| Montageart | Chassis / heatsink mount (screw-down) |
| Bias Configuration | Class AB, gate-biased |
| Configuration | Single-ended, single transistor |
| MSL-Level | Not applicable (leaded ceramic chassis-mount part) |
| Distributor Stock (Heisener) | 12,072 pieces (as of 2026-10-16) |
MRF6P18190HR6 Pin-Konfiguration
| Pin 1 | Gate (Input) — RF input / gate bias lead; bolt-down lead on one side of the NI-1230 ceramic body |
| Pin 2 | Drain (Output) — RF output / drain bias lead on the opposite side of the NI-1230 ceramic body |
| Pin 3 | Flange / Drain Tab — Chassis-mount flange that doubles as the thermal pad and primary drain connection; bolted to heatsink |
| Pin 4 | Source — Source bond (internally bonded to flange in most versions); connect to RF ground on the PCB microstrip transform |
Typische Anwendungen
MRF6P18190HR6 ist geeignet für 7 Anwendungs: W-CDMA 2-Carrier Base Station PA Final Stage, Doherty PA for 1.88 GHz Cellular Infrastructure, Multi-Carrier Power Amplifier (MCPA) Module, Cellular Repeater / BTS Driver Amplifier, Industrial RF Heating / Plasma Generator Driver, WLL (Wireless Local Loop) Transmitter, PCN/PCS Cellular Infrastructure Power Stage.
W-CDMA 2-Carrier Base Station PA Final Stage
The MRF6P18190HR6 is designed specifically as a 44 W average-output final stage for 2-carrier W-CDMA base-station power amplifiers. Its 28 V class-AB bias and 15.9 dB gain at 1.88 GHz mean a single device can reach the rated 44 W Pout from a sub-1 W driver, simplifying the PA lineup. Its wideband matching support for 2-carrier signals makes it tolerant of multi-carrier composite power across the 1805-1880 MHz band. Recommended companion parts: NXP MRF18060 (driver), NXP MRF6P18190HR6 (final, this device), microstrip quadrature coupler (Anaren).
Empfohlen
Doherty PA for 1.88 GHz Cellular Infrastructure
In a Doherty configuration, the MRF6P18190HR6 serves as the main (carrier) amplifier with a peak amplifier drawn from the same MRF6 family, allowing 6-9 dB efficiency back-off savings at moderate drive. Its 28 V rail eases integration with existing W-CDMA base-station power supplies, and its NI-1230 package shares a common thermal pattern with sibling devices, simplifying the carrier/peak combiner layout. The combination is a high-efficiency upgrade path for legacy class-AB 1.88 GHz stations.
Empfohlen
Multi-Carrier Power Amplifier (MCPA) Module
The MRF6P18190HR6 is rated for multi-carrier amplifier (MCPA) lineups where two or more modulated carriers sum to a composite signal whose peak-to-average ratio stresses the final stage. Its 1805-1880 MHz coverage and 44 W CW class-AB output make it a strong choice for 4-carrier TDMA/CDMA amplifiers targeting DCS/PCS uplink. Recommended companions: Anaren power combiner, MACOM coupler, crystek TCXO reference.
Empfohlen
Cellular Repeater / BTS Driver Amplifier
Repeater and small-cell BTS lineups at DCS-1800/PCS-1900 frequencies leverage the MRF6P18190HR6 as a final or driver stage. At 44 W it can drive a 50 W-rated antenna combining network with margin, while still fitting compact chassis thanks to its NI-1230 bolt-down package and well-documented thermal behavior. The 15.9 dB gain headroom allows a single-stage repeater design with minimal driver overhead.
Empfohlen
Industrial RF Heating / Plasma Generator Driver
Industrial RF heating at 1805-1880 MHz industrial-scientific-medical (ISM) frequencies can use the MRF6P18190HR6 as a 44 W driver or final stage. Its lateral MOSFET ruggedness tolerates mismatched loads common in heating loads; the 28 V bias is compatible with standard industrial DC rails. Designers should add a circulator/isolator at the output to protect the device from reflected power.
Empfohlen
WLL (Wireless Local Loop) Transmitter
Wireless Local Loop base-station transmitters in the 1805-1880 MHz band can use the MRF6P18190HR6 as their final PA, feeding a directional antenna or sector. Its 44 W output covers typical WLL link-budget requirements and its 28 V compatibility with telecom-grade −48 V / 28 V DC-DC converter rails makes system integration straightforward. A circulator plus harmonic filter is recommended in the RF chain.
Empfohlen
PCN/PCS Cellular Infrastructure Power Stage
The MRF6P18190HR6 is rated for PCN/PCS/cellular radio infrastructure power stages, where its 28 V class-AB bias and 44 W output conveniently cover both DCS-1800 and the lower PCS-1900 PA slots. Designers targeting 3G/UMTS service in the 1805-1880 MHz uplink benefit from its multi-carrier tolerance and ruggedness against 10:1 VSWR. Recommended companions: NXP MRF6-series driver, AVX ATC capacitor bank for matching networks.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF6P18190HR6 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF6S19100HR6 | MRF6VP18010HR6 | MRF18060ALSR3 | MRF6S18010NR6 | PTF180101M-V1 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Infineon |
| Package | NI-1230 ceramic single-flange | NI-880 ceramic single-flange | NI-1230 ceramic single-flange | NI-360 ceramic single-flange | NI-400 ceramic single-flange | PG-VSON-4 single-flange ceramic |
| Frequency Band | 1805-1880 MHz | 1930-1990 MHz | 1800-1900 MHz | 1805-1880 MHz | 1800-2000 MHz | 1800-1900 MHz |
| Output Power (avg) | 44 W | 100 W | 10 W | 60 W | 10 W | 100 W |
| Drain Voltage | 28 V | 28 V | 28 V | 26 V | 28 V | 28 V |
| Technology | Lateral N-channel LDMOS, MOSFET | Lateral N-channel LDMOS | Lateral N-channel LDMOS | Lateral N-channel MOSFET | Lateral N-channel LDMOS | LDMOS (Infineon process) |
Wichtigste Unterscheidungsmerkmale
- Tight band-tuning for DCS-1800 / IMT-2000 W-CDMA (vs. MRF6S19100HR6)
- Higher power in a single 1.88 GHz device (vs. MRF6VP18010HR6)
- Newer NI-1230 packaging vs older driver footprints (vs. MRF18060ALSR3)
- NXP/Freescale original vs Infineon alternative (vs. PTF180101M-V1)
Designhinweise
Estimated: at 44 W avg output with ~33% efficiency under 2-carrier W-CDMA, the MRF6P18190HR6 dissipates roughly 90 W of heat into the NI-1230 flange. With the datasheet theta_JC of approximately 0.5 C/W, junction-to-flange rise is ~45 C, so the heatsink must keep the flange under 80 C to keep Tj below 125 C. Use a thermal-pad rated for low thermal resistance (Bergquist Sil-Pad or equivalent) and torque the mounting screws to the datasheet-recommended value - typically 1.5-2.0 N·m for NI-1230 - to avoid flange warping and thermal interface voids.
Use 50 Ω microstrip transforms (or stripline, if the chassis requires it) at both gate and drain leads of the MRF6P18190HR6. The microstrip substrate should be a low-loss RF laminate (Rogers RO4350B or similar) with controlled Z0 to within ±5% - the lateral MOSFET's gain flatness across 1805-1880 MHz is sensitive to matching. Place the gate-source zener protection diode as close to the gate lead as practical; a 9.1 V zener to ground is a typical choice for the MRF6 family. Decouple the drain bias with a 1 µF ceramic plus a 100 µF electrolytic at the bias feed to suppress low-frequency bias ringing.
Three common pitfalls with the MRF6P18190HR6: (1) operating above 28 V to chase more Pout - this accelerates thermal-failure modes and is not supported by the datasheet; (2) skipping a gate-source zener - the lateral gate oxide is much more sensitive to overvoltage than competing power BJTs; (3) building the heatsink with poor thermal interface material, leading to Tj(trip) on long talk bursts. Always bias the device into class-AB with a sequenced gate supply, and verify VSWR tolerance is at least 10:1 across all operating phases.
The MRF6P18190HR6 has ~15.9 dB of gain at 1.88 GHz, so any I/O isolator leakage or output-stage oscillation can drive the device into compression. Use a 50 Ω ferrite-loaded circulator on the output with at least 25 dB isolation across the 1805-1880 MHz band, and gate the drain bias with a slow-start RC network (~10 ms rise time) to suppress inrush oscillations. Add a harmonic lowpass filter after the circulator to meet FCC/ETSI spurious-emission limits; the 2nd and 3rd harmonics of 1.88 GHz fall in radar bands and require special attention.
Compliance-Informationen
RoHS/lead-free/halogen-free status was not present in the verified web data and is marked as [DATA_NEEDED] in the specs; AEC-Q100 is not_applicable because this is an infrastructure-grade RF power MOSFET, not an automotive-grade IC. Conflict-minerals compliance is recorded as compliant per NXP's corporate policy.
