MRF6P9220HR5 - 880MHz 47W RF Power MOSFET | NXP Semiconductors
Teilenummer: MRF6P9220HR5 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $115 | $115,00 |
| 10 | $108.5 | $1.085,00 |
| 50 | $102 | $5.100,00 |
| 100 | $96.75 | $9.675,00 |
| 250 | $91.2 | $22.800,00 |
MRF6P9220HR5 Übersicht
An RF power MOSFET is a discrete transistor optimized for radio-frequency amplification rather than switching or low-frequency linear operation. These devices sit within the broader hierarchy of power transistors -> RF transistors -> RF power MOSFETs -> discrete semiconductors. The MRF6P9220HR5 belongs to NXP's MRF6P series of laterally diffused MOSFETs (LDMOS), the dominant technology for cellular base-station and broadcast RF power amplifiers since the early 2000s.
Key electrical strengths include 47 W CW output power at 880 MHz, 20 dB power gain which reduces driver-stage requirements, high drain efficiency for reduced heat-sinking mass, and ruggedness against load mismatch with VSWR up to 10:1 (per manufacturer). The 28 V supply rail keeps drain current moderate while delivering high RF energy, and the broadband matching networks commonly used with this family simplify multi-band designs.
Internally, the MRF6P9220HR5 employs a silicon LDMOS architecture with a planar gate and ceramic NI-860C3 flange package featuring a through-hole lead format. The ceramic body offers a low thermal resistance path from junction to heatsink, with bolt-down mounting enabling direct attachment to external copper or aluminum heat spreaders.
Typical applications include cellular base-station final-stage amplifiers at 800-900 MHz, broadcast FM transmitter drivers, industrial RF heating generators, and aerospace telemetry transmitters. It is also used as a driver or pre-driver for higher-power MRF6P9220 / MRF6P9220H single-ended or push-pull amplifier chains.
Design tip: This device requires a tuned matching network on input and output, a low-inductance ground return, and a properly biased gate supply (typically a few volts positive on Vgs). Provide adequate heatsinking - the ceramic package dissipates significant heat at 47 W CW. Designers should also implement over-temperature protection via a thermistor and avoid operating outside the 28 V specified rail to prevent parametric shift.
This page synthesizes distributor pricing, drop-in cross-references, and practical design notes that go beyond the manufacturer datasheet headlines.
Drop-in-Alternativen für MRF6P9220HR5 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF6P9220HR5 (gleiche Bauform und Footprint) – abweichend in Configuration, Mounting Type, Technology, Transistor Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF6P9220HR3
✅ Drop-In✓ Auf Lager
$58.4 / Stück
Datenblatt ansehen →MRF6P9220H
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6P9220HSR5
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6P9220HR5 Grenzwerte & elektrische Eigenschaften
| Transistortyp | N-Channel RF Power MOSFET |
| Technology | LDMOS (Laterally Diffused MOS) |
| Drain-Source Voltage (Vdss) | 68 V |
| Continuous Drain Current (Id) | 1.6 A |
| Typical Operating Voltage | 28 V |
| Operating Frequency | 880 MHz |
| Output Power (Pout) | 47 W (CW) |
| Power Gain (Gps) | 20 dB |
| Gehäuse / Bauform | NI-860C3 (5-pin ceramic, flange mount) |
| Montageart | Through-Hole / Bolt-Down |
| Configuration | Single, Flanged |
| Betriebstemperatur | -40C to +150C (TJ) |
| Polarization | N-Channel |
MRF6P9220HR5 Pin-Konfiguration
| Pin 1 | DRAIN1 — RF output / drain connection 1 |
| Pin 2 | DRAIN2 — RF output / drain connection 2 |
| Pin 3 | GATE1 — RF input / gate connection 1 |
| Pin 4 | GATE2 — RF input / gate connection 2 |
| Pin 5 | SOURCE / FLANGE — Source and chassis ground via mounting flange (bolt-down) |
Sicherer Arbeitsbereich - MRF6P9220HR5
Typische Anwendungen
MRF6P9220HR5 ist geeignet für 6 Anwendungs: Cellular Base Station Power Amplifier, Broadcast FM Transmitter Driver, Industrial RF Heating Generator, Aerospace and Telemetry Transmitter, Multi-Carrier GSM/CDMA Power Amplifier, Public Safety / Land Mobile Radio Repeater.
Cellular Base Station Power Amplifier
The MRF6P9220HR5 drives the final-stage RF amplifier in 800-900 MHz cellular base stations, including GSM and early LTE band deployments. At 880 MHz with 47 W CW output and 20 dB gain, it enables a -7 to -5 dBm driver signal to fully excite a sector amplifier delivering typical macro-cell downlink power. Compared to bipolar transistors, the LDMOS architecture offers higher gain per stage and superior ruggedness against lightning-induced VSWR transients; trade-off is slightly lower efficiency than GaN but at a lower cost structure for sub-1 GHz. The device is typically mounted to a copper spreader integrated into the heatsink tray of the radio unit, with DC supply filtering and bias sequencing managed by the basestation's RF front-end control board.
Empfohlen
Broadcast FM Transmitter Driver
For commercial FM broadcast transmitters at 88-108 MHz (with the 880 MHz capability extending into L-band), the MRF6P9220HR5 serves as a stable driver or low-power final stage. The 20 dB gain means a 1 W exciter can drive the MRF6P9220HR5 to its full 47 W output, which is then fed into a higher-power combiner. The 28 V supply rail is broadcast-industry standard and matches existing transmitter power supply designs, reducing retrofit complexity. Compared to vacuum tubes historically used in this role, this LDMOS part eliminates warm-up time and offers longer MTBF, dramatically reducing transmitter maintenance intervals for broadcast operators.
Empfohlen
Industrial RF Heating Generator
In industrial RF heating systems for plastics welding, food processing, or dielectric heating at sub-1 GHz ISM allocations, the MRF6P9220HR5 provides reliable 47 W CW into reactive loads. The LDMOS ruggedness against VSWR mismatch is critical here, as industrial loads vary with material properties and moisture content. Per NXP test data, the device tolerates 10:1 VSWR at rated output without damage, enabling simplified load monitoring and removing the need for fast external circulators. The 28 V supply integrates with industrial 24-32 V bus systems common in factory automation. Cooling is typically via a forced-air heatsink mounted in the RF generator cabinet.
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Aerospace and Telemetry Transmitter
Aerospace L-band telemetry and unmanned aerial vehicle (UAV) data-link transmitters at 800-900 MHz use the MRF6P9220HR5 as the final RF amplifier stage. The 47 W output enables long-range datalinks, while the wide -40C to +150C junction temperature rating supports the harsh thermal and altitude environments of airborne platforms. The NI-860C3 ceramic package withstands vibration and thermal cycling better than plastic-packaged parts, making it suitable for avionics bay mounting. Trade-off vs. smaller SMD parts is the heavier ceramic flange requiring secure mechanical mounting in airframe vibration zones.
Empfohlen
Multi-Carrier GSM/CDMA Power Amplifier
For pre-LTE multi-carrier GSM and CDMA base stations operating with multiple modulated carriers simultaneously, the MRF6P9220HR5 provides the linearity and peak-to-average handling at 880 MHz. The 20 dB gain with high linearity reduces the number of gain stages needed, easing the amplifier chain's overall composite ACPR (Adjacent Channel Power Ratio) budget. The 28 V rail enables the higher peak voltages encountered in multi-carrier operation while keeping transistor junction temperatures in safe ranges. Designers typically add a digital predistortion (DPD) loop around the MRF6P9220HR5 for 3G/4G linearity correction.
Empfohlen
Public Safety / Land Mobile Radio Repeater
Mission-critical public safety repeaters at 800-900 MHz (e.g., P25, TETRA in sub-1 GHz allocations) leverage the MRF6P9220HR5's reliability and 47 W output to cover wide geographic areas. Its LDMOS architecture supports continuous-duty operation required for always-on repeater service, with thermal design margins accommodating the higher duty cycles of voice vs. data traffic. The 28 V supply rail simplifies integration with battery-backed repeater site DC plants common in public safety infrastructure.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF6P9220HR5 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF6P9220HR3 | MRF6P9220H | MRF6P9220HSR5 |
|---|---|---|---|---|
| Package | NI-860C3 (5-pin ceramic flanged) | NI-860C3 - same | NI-860C3 - same | NI-860C3 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Operating Frequency | 880 MHz | 880 MHz | 880 MHz | 880 MHz |
| Output Power | 47 W CW | 47 W CW | 47 W CW | 47 W CW |
| Power Gain | 20 dB | 20 dB | 20 dB | 20 dB |
| Operating Voltage | 28 V | 28 V | 28 V | 28 V |
| Maximum Vdss | 68 V | 68 V | 68 V | 68 V |
| Packaging Format | Tape & Reel (HR5 suffix) | Tray/Tube (HR3) | Bulk (H suffix) | Tape & Reel (HSR5) |
Wichtigste Unterscheidungsmerkmale
- Highest-volume tape-and-reel format in MRF6P9220 family (vs. MRF6P9220HR3)
- Established production status and continuous supply (vs. MRF6P9220H (alternative suffix variant))
- Ni-860C3 ceramic flange for direct bolt-down heatsink mounting (vs. Generic plastic-packaged RF MOSFETs)
Designhinweise
Estimated: At 47 W RF output and typical 50% drain efficiency, total DC input is ~94 W and dissipated power is ~47 W as heat. With proper bolt-down to a copper spreader plus forced-air cooling, junction-to-ambient thermal resistance of approximately 0.5 C/W is achievable, limiting Tj rise to roughly 24C above ambient at full CW output. Without adequate cooling, junction temperature will exceed 150C rating within seconds at full power. Mounting torque per NXP datasheet recommendations must be followed to avoid thermal interface gap formation.
Estimated: The NI-860C3 ceramic flange must be mounted to a clean, flat heatsink surface with thermal compound (e.g., Wakefield Thermalcote or equivalent). Use brass or stainless-steel mounting hardware per NXP datasheet. The flange itself is the source (ground) terminal - low-inductance grounding is essential to prevent RF instability. Microstrip traces from gate and drain should be kept short and impedance-matched to 50 ohms at the operating frequency.
Exceeding 28 V drain bias significantly can reduce MTBF and trigger thermal shutdown; staying at or below 28 V preserves long-term reliability. Per NXP datasheet, gate bias should be set precisely for the desired quiescent current (typically Class AB bias). Never operate the device without proper DC blocking on input/output - DC leakage into adjacent stages can destroy earlier-stage components. Avoid load VSWR exceeding 10:1 sustained - the device is rugged but not indestructible.
Compliance-Informationen
AEC-Q100 not applicable - this is a discrete RF power MOSFET for infrastructure/aerospace, not automotive. Compliance data for RoHS/REACH/lead-free/halogen-free was not present in the Verified Web Data and is marked [DATA_NEEDED].
