MRF6S19100NBR1 - 22W RF Power MOSFET 1930-1990 MHz | NXP
Teilenummer: MRF6S19100NBR1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $78.5 | $78,50 |
| 10 | $71.2 | $712,00 |
| 100 | $64.95 | $6.495,00 |
| 500 | $58.4 | $29.200,00 |
| 1.000 | $52.75 | $52.750,00 |
MRF6S19100NBR1 Übersicht
An RF power MOSFET is a specialized lateral metal-oxide-semiconductor field-effect transistor optimized for radio-frequency power amplification rather than low-frequency switching. It sits within the hierarchy RF transistor -> power transistor -> discrete semiconductor -> active electronic component, and is engineered to deliver high gain, high efficiency, and rugged operation under mismatched load conditions typical of cellular base-station power amplifiers.
Key features include 22 W P1dB-class output power at 1.99 GHz, 14.5 dB typical power gain, 28 V drain supply, integrated ESD protection, and a built-in heat-spreading ceramic package. The device is designed for high linearity required by N-CDMA signals and incorporates internal matching that simplifies external circuitry. The TO-272 WB-4 form factor provides low thermal resistance for reliable CW and pulsed operation.
Architecturally the MRF6S19100NBR1 uses NXP's high-frequency laterally diffused MOS (LDMOS) process, which combines the high breakdown voltage of silicon with low parasitic capacitance for efficient switching at microwave frequencies. This LDMOS technology has become the dominant choice for cellular base-station power amplifiers from 900 MHz through 2.7 GHz due to its balance of gain, efficiency, and cost. Two such transistors can be combined in a push-pull configuration for Doherty or balanced amplifier topologies targeting modern LTE and 5G NR bands.
Typical applications include 1.9 GHz PCS/cellular base-station power amplifiers, WLL (wireless local loop) infrastructure, TDMA and CDMA multicarrier line-ups, and Class AB driver stages for higher-power Doherty final stages. Designers frequently cascade it with NXP MRF6S2100N or similar higher-power devices when more output power is required.
When designing with this part, ensure proper RF bypassing on the gate and drain bias lines and follow the application circuit reference layout closely. Thermal management is critical: use a copper-spreader PCB footprint and adequate airflow to keep junction temperature below 150 C during continuous CDMA multicarrier operation.
This page synthesizes distributor pricing, drop-in same-package alternatives, and design notes drawn from the NXP datasheet and authorized distributor listings - engineering information that goes beyond the datasheet alone.
Drop-in-Alternativen für MRF6S19100NBR1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF6S19100NR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6S19100N
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6S19100NBR1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | LDMOS (Laterally Diffused MOS) |
| Frequency Range | 1930 MHz to 1990 MHz |
| Test Frequency | 1.99 GHz |
| Drain Supply Voltage (Vdd) | 28 V |
| Drain Current (Id) | 950 mA |
| Output Power (Pout) | 22 W average |
| Power Gain | 14.5 dB (typical at 1.99 GHz) |
| Gehäuse | TO-272 WB-4 (overmolded ceramic) |
| Montageart | Surface Mount |
| Operating Mode | Class AB |
| Target Application | N-CDMA base station, PCS, WLL, multicarrier amplifier |
| RoHS-Status | Compliant |
MRF6S19100NBR1 Pin-Konfiguration
| Pin 1 | Gate — RF input gate; requires DC bias feed and matching network |
| Pin 2 | Drain — RF output / drain supply; 28 V Vdd via RF choke |
| Pin 3 | Gate-Bias / Source — DC bias return and source reference (flange) |
| Pin 4 | Source / Thermal Pad — Source and primary thermal path; solder to copper-spreader PCB ground |
DC Sicherer Arbeitsbereich (MRF6S19100NBR1)
Typische Anwendungen
MRF6S19100NBR1 ist geeignet für 6 Anwendungs: N-CDMA PCS Base-Station Power Amplifier, Wireless Local Loop (WLL) Infrastructure, Class AB Driver Stage for Doherty Final, Multicarrier PCS Amplifier Line-Up, 1.9 GHz Repeater Power Amplifier, Industrial / Scientific RF Heating.
N-CDMA PCS Base-Station Power Amplifier
The MRF6S19100NBR1 is a primary candidate for the final or driver stage of a 1.9 GHz N-CDMA PCS base-station power amplifier. Its 1930-1990 MHz band coverage, 22 W average output, and 14.5 dB gain at 1.99 GHz align directly with the air interface and linearity envelope mask required by 3GPP2 cdma2000 line-ups. The 28 V Vdd matches standard cellular PA bias rails, and the TO-272 WB-4 ceramic package keeps junction temperature under 150 C during continuous multicarrier drive - critical for MTBF in always-on base-station hardware. The datasheet application circuit shows the device in Class AB with input/output matching on microstrip.
Empfohlen
Wireless Local Loop (WLL) Infrastructure
The MRF6S19100NBR1 is well-suited for WLL base-station transmitters operating in the 1.9 GHz PCS band, where the 22 W average output drives sector antennas in fixed-wireless customer-premises links. Its high linearity at 28 V supports the multicarrier modulation formats used by WLL systems, while the 14.5 dB gain reduces driver-stage gain burden. The TO-272 WB-4 ceramic package provides the thermal headroom needed for continuous outdoor-cabinet operation at elevated ambient temperatures, and the LDMOS process gives the ruggedness required when antenna VSWR excursions occur during weather events.
Empfohlen
Class AB Driver Stage for Doherty Final
In a Doherty or balanced amplifier architecture, the MRF6S19100NBR1 functions as the carrier-path driver stage feeding a higher-power final such as the MRF6S2700N family at 1.9 GHz. The 22 W output provides linear headroom above the Doherty peaking-region transition, and the 14.5 dB gain reduces the number of driver devices needed. Class AB bias at 28 V keeps the carrier amplifier in its linear region while the peaking amplifier handles the load-pulled high-power region. The TO-272 WB-4 ceramic package simplifies thermal integration with copper-spreader PCBs typical of base-station RF line-ups.
Empfohlen
Multicarrier PCS Amplifier Line-Up
The MRF6S19100NBR1 targets multicarrier amplifier (MCA) line-ups where several CDMA carriers are combined and amplified simultaneously in the 1930-1990 MHz band. The 22 W average rating is the multicarrier composite output, and the linearity specification must hold across the carrier-combined envelope. The TO-272 WB-4 ceramic package dissipates the continuous-wave heat generated by multicarrier drive better than plastic-packaged alternatives, and the 28 V Vdd matches standard cellular PA bias. Designers should follow the NXP reference design bias network and use the recommended input/output matching networks for multicarrier operation.
Empfohlen
1.9 GHz Repeater Power Amplifier
The MRF6S19100NBR1 can serve as the final-stage amplifier in 1.9 GHz on-frequency or frequency-translating repeaters used to extend PCS coverage in buildings, tunnels, or rural cells. Its 22 W output powers the donor or coverage antenna through a duplexer, and the 14.5 dB gain minimizes driver count in the repeater's RF chain. The 1930-1990 MHz band coverage is well matched to repeater front-end filtering, and the LDMOS process's high ruggedness protects the device when antenna VSWR mismatches occur. The TO-272 WB-4 ceramic package is preferred in repeater designs operating continuously at elevated ambient temperatures inside amplifier housings.
Empfohlen
Industrial / Scientific RF Heating
The MRF6S19100NBR1 is occasionally deployed in industrial or scientific RF heating equipment operating near 1.99 GHz, where continuous-wave power and high efficiency matter more than modulation linearity. The 22 W output, 28 V Vdd, and rugged LDMOS construction allow the part to survive load-mismatch conditions typical of variable-coupled industrial loads. The TO-272 WB-4 ceramic package provides the thermal budget for CW duty cycles, and the 14.5 dB gain simplifies the surrounding driver electronics. Designers should still verify regulatory compliance and tuning ranges before repurposing cellular LDMOS parts for ISM-band applications.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF6S19100NBR1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF6S19100NR1 | MRF6S19100N |
|---|---|---|---|
| Package | TO-272 WB-4 (ceramic) | TO-272 WB-4 (ceramic) - same | TO-272 WB-4 (ceramic) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1930 - 1990 MHz | 1930 - 1990 MHz | 1930 - 1990 MHz |
| Output Power (Pout) | 22 W avg | 22 W avg | 22 W avg |
| Power Gain | 14.5 dB | 14.5 dB | 14.5 dB |
| Drain Supply Voltage | 28 V | 28 V | 28 V |
| Packaging Format | Tape & Reel (NBR1) | Tape & Reel (NR1, 13-inch) | Tray (no reel suffix) |
| Application Class | Class AB N-CDMA base station | Class AB N-CDMA base station | Class AB N-CDMA base station |
Wichtigste Unterscheidungsmerkmale
- Drop-in same-die alternative for 13-inch reel manufacturing (vs. MRF6S19100NR1)
- TO-272 WB-4 ceramic thermal performance vs plastic-packaged LDMOS (vs. Generic DFN/SOIC plastic-packaged 1.9 GHz LDMOS)
- Optimized for the 1.9 GHz PCS band - not 1.8 GHz DCS (vs. MRF18085AR3 (1.8 GHz DCS))
Designhinweise
The TO-272 WB-4 ceramic package must be soldered to a copper-spreader PCB footprint sized to keep junction temperature below 150 C under continuous N-CDMA multicarrier drive at 22 W output. At full 28 V Vdd and 950 mA bias, the device dissipates substantial heat that requires either a cold plate or significant airflow. Always consult the NXP application note thermal curves before committing to a heatsink-free design.
RF traces on gate and drain must be controlled-impedance microstrip lines tuned for 50 ohm at 1.99 GHz, and the gate/drain bias feeds must use broadband RF chokes with high-Q bypass capacitors close to the package leads. Follow the NXP reference design layout exactly; even small parasitic shifts in the matching network can detune the amplifier and degrade linearity at the N-CDMA envelope mask. Use a continuous ground plane on layer 2 stitched generously with vias around the source flange.
Do not exceed the absolute maximum drain voltage of 65 V or the device will suffer avalanche breakdown. Do not operate the gate above its maximum rating, and ensure the gate bias turn-on sequence ramps Vgs before Vdd to avoid uncontrolled current surges. The TO-272 WB-4 ceramic package is ESD-sensitive at the gate - use proper handling procedures and a wrist strap during PCB assembly.
For N-CDMA line-ups, the device linearity must hold across the multicarrier composite envelope; verify the ACLR and EVM margins in the datasheet against your mask requirement before finalizing the BOM. Use a high-linearity gate bias regulator with low noise to avoid injecting bias noise that would degrade adjacent-channel leakage. Temperature-compensated gate bias (Vgs vs Tj) is recommended to maintain quiescent current across the operating temperature range.
Compliance-Informationen
RoHS and REACH compliance per NXP product page; the TO-272 WB-4 ceramic package is lead-free. AEC-Q100 not applicable - this is an RF power transistor, not an automotive-grade IC. Verify halogen-free status with the latest manufacturer statement before committing to halogen-free BOM requirements.
