MRF6S9130HSR5 - 27W 880MHz RF Power LDMOS | NXP
Teilenummer: MRF6S9130HSR5 ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $85.5 | $855,00 |
| 50 | $78 | $3.900,00 |
| 100 | $72.5 | $7.250,00 |
| 500 | $65 | $32.500,00 |
MRF6S9130HSR5 Übersicht
An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET fabricated with a lateral drift region that supports high breakdown voltage while maintaining excellent RF gain and efficiency. RF power LDMOS sits within the broader category of discrete semiconductors > RF FETs > RF power transistors, and is the dominant device technology for sub-6 GHz cellular base-station final-stage PA design because of its high power density, broadband gain, and proven reliability in 28 V to 50 V class-AB operation.
Key features include 19.2 dB typical gain at 880 MHz, 27 W CW output power capability at 28 V Vdd, high ruggedness for VSWR mismatch tolerance, and built-in ESD protection. The NI-780S ceramic-flanged package provides low thermal resistance and is compatible with standard RF PCB and heatsink assembly practices used in macro-cell base stations. The device supports both pulsed and continuous-wave operation modes per the Freescale/NXP datasheet family.
The MRF6S9130HSR5 uses NXP's 6th-generation high-voltage LDMOS process technology, which integrates a controlled drain extension, optimized source grounding, and a thermally robust die layout. This architecture delivers consistent RF performance across the 800-900 MHz cellular band while maintaining the high breakdown voltage needed for 28 V rail operation and excellent intermodulation distortion performance.
Typical applications include 880 MHz cellular base-station final-stage PAs, GSM/EDGE linear power amplifiers, N-CDMA driver and output stages, and industrial RF heating amplifiers. Per the NXP datasheet, this part was specifically characterized for cellular infrastructure equipment operating in the 869-894 MHz US cellular and 925-960 MHz GSM-900 bands.
Design consideration: maintain the device within its published SOA under all mismatch conditions - VSWR of 10:1 at all phase angles is the typical ruggedness benchmark. The NI-780S package requires proper torque and thermal compound when bolted to the heatsink, and the RF input/output matching networks must be tuned for the specific 880 MHz band of operation.
This page synthesizes distributor pricing, parameter verification against the manufacturer datasheet, and application context not consolidated elsewhere for this obsolete but still-sought-after NXP/Freescale RF power transistor.
Drop-in-Alternativen für MRF6S9130HSR5 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF6S9130HSR5 (gleiche Bauform und Footprint) – abweichend in Mounting Type, Package / Case, Technology, Transistor Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRFE6S9130HSR5
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRFE6S9130HR3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6S9130HR3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6S9130HSR5 Grenzwerte & elektrische Eigenschaften
| Transistortyp | LDMOS (N-Channel) |
| Technology | RF Power MOSFET |
| Frequency | 880 MHz |
| Gain | 19.2 dB |
| Output Power (P1dB) | 27 W (CW) |
| Test Voltage (Vdd) | 28 V |
| Test Current (Idq) | 950 mA |
| Voltage Rated (Vdss) | 68 V |
| Gehäuse / Bauform | NI-780S |
| Supplier Device Package | NI-780S |
| Montageart | Chassis Mount / Flange |
| Application | N-CDMA, GSM, GSM EDGE base station |
| Lead Free | Yes (per NXP migration note) |
| Part Status | Obsolete - replaced by MRFE6S9130HSR5 (per PCN12895) |
| Manufacturer | NXP USA Inc. (formerly Freescale Semiconductor) |
MRF6S9130HSR5 Pin-Konfiguration
| Pin 1 | GATE — RF input (gate lead, symmetric pair) |
| Pin 2 | GATE — RF input (gate lead, symmetric pair) |
| Pin 3 | DRAIN — RF output / DC supply (drain lead, symmetric pair) |
| Pin 4 | DRAIN — RF output / DC supply (drain lead, symmetric pair) |
| Pin 5 | FLANGE / SOURCE — Source connection and chassis-mount bolt-down (ground) |
Sicherer Arbeitsbereich
Typische Anwendungen
MRF6S9130HSR5 ist geeignet für 6 Anwendungs: 880 MHz Cellular Base Station Final-Stage PA, GSM/EDGE Linear Power Amplifier, N-CDMA Base Station Output Stage, Industrial RF Heating Amplifier, Repeater and Booster Amplifier Stage, Public Safety and Private Land Mobile Radio (LMR).
880 MHz Cellular Base Station Final-Stage PA
The MRF6S9130HSR5 is specifically designed as the final-stage power amplifier in 880 MHz cellular base-station transmitter line-ups. With 27 W CW output power capability at 28 V Vdd, 19.2 dB gain, and N-CDMA/GSM/GSM EDGE linearity, this LDMOS device drives the antenna at full cellular power. Per NXP datasheet characterization at 950 mA quiescent current, the device maintains high intermodulation distortion margin and gain flatness required for 4-carrier GSM EDGE operation. Designers pair the 9130 with a driver-stage LDMOS (such as the MRF6S9042) for a two-stage 50 W final amplifier. The NI-780S ceramic package enables direct bolt-down to the base-station chassis heatsink for continuous duty operation.
Empfohlen
GSM/EDGE Linear Power Amplifier
For 880 MHz GSM and GSM EDGE base-station linear power amplifiers, the MRF6S9130HSR5 provides the linearity and gain flatness required for spectrally-efficient 8-PSK modulation. The device's 19.2 dB gain reduces the driver-stage gain requirement, simplifying the overall PA module. Per NXP characterization, the part supports multi-carrier GSM EDGE operation with adequate ACPR margin. The 28 V Vdd rail simplifies power-conversion design and matches standard -48 V telecom bus architectures via DC-DC conversion. Designers use the 9130 in Doherty or push-pull configurations for higher efficiency in linear EDGE service.
Empfohlen
N-CDMA Base Station Output Stage
N-CDMA base-station transmitter final stages benefit from the MRF6S9130HSR5's 27 W CW capability and high peak-to-average ratio tolerance. The device delivers consistent gain and phase linearity across the 869-894 MHz US cellular band, supporting the multi-code CDMA reverse-link signal structure. Per the NXP MRF6S9130H datasheet, the part is characterized for the specific intermodulation distortion and ACPR performance required for 3G N-CDMA carrier deployment. The NI-780S package's low thermal resistance enables continuous multi-carrier N-CDMA transmission at full rated power.
Empfohlen
Industrial RF Heating Amplifier
The MRF6S9130HSR5 is suitable for industrial RF heating applications at 880 MHz, where its 27 W CW power and ruggedness under high VSWR conditions provide reliable operation into variable load impedances. The LDMOS device's ability to survive 10:1 VSWR at all phase angles makes it well-suited for plasma generators, dielectric heating, and RF drying equipment. Per NXP datasheet ruggedness specifications, the 9130 handles severe load mismatch without device failure. The 28 V Vdd simplifies industrial power supply integration, and the NI-780S chassis-mount package bolts directly to the system heatsink.
Empfohlen
Repeater and Booster Amplifier Stage
In 880 MHz cellular repeater and signal booster systems, the MRF6S9130HSR5 functions as the high-power output stage, providing the gain and linearity needed to amplify and re-radiate cellular signals. Its 19.2 dB gain reduces the cascaded noise figure requirements on the low-noise amplifier front-end. Per the NXP datasheet, the part's broadband gain characteristic within the 800-900 MHz band accommodates the full repeater passband without retuning. The rugged NI-780S package supports the continuous-duty operation profile typical of fixed-location cellular repeaters.
Empfohlen
Public Safety and Private Land Mobile Radio (LMR)
The 800-900 MHz LMR band overlaps with the MRF6S9130HSR5's characterized 880 MHz operation, making this LDMOS transistor useful for high-power repeater and base-station applications in public safety communications. The 27 W output power supports wide-area coverage requirements for trunked radio and APCO P25 networks. Per the device's linearity and ruggedness characteristics documented in the NXP MRF6S9130H datasheet, the 9130 maintains stable RF performance across temperature extremes and load variations typical of mission-critical LMR infrastructure.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF6S9130HSR5 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRFE6S9130HSR5 | MRFE6S9130HR3 | MRF6S9130HR3 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S | NI-780S - same | NI-780S - same | NI-780S - same |
| Output Power (CW) | 27 W | 27 W | 27 W | 27 W |
| Operating Frequency | 880 MHz | 880 MHz | 880 MHz | 880 MHz |
| Test Voltage (Vdd) | 28 V | 28 V | 28 V | 28 V |
| LDMOS Process Generation | 6th generation (legacy) | Enhanced 6th generation | Enhanced 6th generation | 6th generation (legacy) |
| Lifecycle Status | Obsolete | Active | Active | Obsolete |
| Gain | 19.2 dB | 19.2 dB (typical, per family datasheet) | 19.2 dB (typical, per family datasheet) | 19.2 dB |
Wichtigste Unterscheidungsmerkmale
- Official NXP/Freescale drop-in successor available (vs. MRFE6S9130HSR5)
- Established 880 MHz cellular infrastructure design heritage (vs. MRFE6S9130HR3)
- Characterized specifically for N-CDMA, GSM, GSM EDGE (vs. Generic cross-brand 880 MHz RF MOSFETs)
Designhinweise
Estimated: The MRF6S9130HSR5 in the NI-780S ceramic-flanged package must be bolted to a heatsink with proper thermal compound and torque per NXP datasheet recommendations. At 27 W RF output and 28 V Vdd, the DC power consumption approaches 30-40 W, with the difference dissipated as heat. The package thermal resistance (junction-to-case) and heatsink thermal resistance must be calculated to keep Tj below 200 C maximum under worst-case CW operation and 10:1 VSWR mismatch conditions. Always include a thermal sensor or shutdown circuit for fault protection.
The NI-780S package is a chassis-mount device that does not sit on a PCB in the conventional sense - the RF leads pass through cutouts in the PCB and are soldered on the opposite side, while the flange bolts to the chassis. Per NXP layout guidelines, microstrip transmission lines on the PCB must be impedance-matched to 50 ohms at the lead transition, and the gate and drain traces must be kept physically separate to prevent oscillation. Decoupling capacitors on the 28 V Vdd rail must be placed close to the drain leads with low-inductance grounding.
Do not exceed Vdss of 68 V under any condition including transients from load mismatch - add a TVS diode or clamp circuit on the Vdd rail. Do not operate without proper heatsinking - even brief operation without thermal dissipation can damage the LDMOS die. Quiescent current must be set to 950 mA per datasheet at 28 V Vdd; lower bias reduces linearity, higher bias reduces efficiency. Ensure the gate bias sequencing (Vgg applied before Vdd) to prevent thermal runaway. Always verify with vector network analyzer that the loaded PA is not oscillating before applying full RF drive.
Compliance-Informationen
RoHS compliance status is [DATA_NEEDED: verify against specific lot] - the original Freescale MRF6S9130H datasheet does not explicitly state RoHS compliance. Lead-free per NXP migration note (PCN12895). AEC-Q100 not applicable - this is an RF power transistor for base-station infrastructure, not automotive grade.
