MRF6VP11KHR5 - 1000W 50V RF Power MOSFET | NXP Semiconductors
Teilenummer: MRF6VP11KHR5 ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $135 | $1.350,00 |
| 50 | $125 | $6.250,00 |
| 100 | $115 | $11.500,00 |
| 250 | $108 | $27.000,00 |
MRF6VP11KHR5 Übersicht
RF power MOSFETs are specialized lateral MOSFETs optimized for high-frequency, high-power switching rather than low-voltage digital logic. The MRF6VP11KHR5 belongs to the NXP VHV6 (very-high-voltage, 6th generation) RF power family, characterized by a 50 V typical operating drain voltage and an 110 V drain-source breakdown that provides the headroom needed for pulse overshoot and load-mismatch transients common in plasma, CO2 laser, and particle-accelerator RF generators. Within the broader hierarchy, the part is a discrete power semiconductor used in power management and RF energy subsystems.
Key electrical features include 26 dB typical power gain at 130 MHz, a pulsed output capability to 1000 W peak, 1.8 MHz to 150 MHz operating frequency range, and 50 V drain-source breakdown class. The rugged NI-1230 ceramic-air-cavity package provides low parasitic inductance and exposed ceramic top for through-package cooling, while internal matching networks are intentionally omitted so designers can apply external matching networks tailored to their specific band and load conditions.
Typical applications include pulsed CO2 laser tube exciters, plasma-generation RF sources, particle accelerator RF amplifiers, MRI spectroscopy gradient drivers, and industrial heating/drying RF generators. Each of these applications requires multi-hundred-watt peak RF bursts at HF/VHF frequencies with high tolerance to load-VSWR faults, which the part's high breakdown voltage and lateral MOSFET structure support.
When designing with this device, ensure the heatsink/thermal spreader contacts the package ceramic top and base and that the drain voltage stays below the rated breakdown under all mismatch conditions. Always operate the device in pulsed (not CW) mode for rated power, and use an external circulator or isolator where load mismatch cannot be otherwise controlled. This page consolidates distributor pricing, drop-in NXP alternatives, package information, and practical design notes beyond the manufacturer datasheet.
Drop-in-Alternativen für MRF6VP11KHR5 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF6VP11KHR6
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6VP11KGSR5
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6VP11KHR6-NXG
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF1K50H
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6VP11KHR5 Grenzwerte & elektrische Eigenschaften
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET (RF Power) |
| Drain-Source Voltage (Vdss) | 110 V |
| Typical Operating Drain Voltage | 50 V |
| Peak RF Output Power | 1000 W (pulsed) |
| Operating Frequency Range | 1.8 MHz to 150 MHz |
| Power Gain (Gps) | 26 dB (typical at 130 MHz) |
| Gehäuse / Bauform | NI-1230 (4-lead ceramic, gull-wing) |
| Montageart | Through-Hole, with external heatsink |
| Configuration | Single, unmatched (external matching required) |
| Maximum Junction Temperature | 225 C |
| Peak Reflow Temperature | 260 C (max 40 s) - reflow profile per JEDEC J-STD-020 |
| Application Class | Pulsed wideband RF amplifier (industrial, medical, scientific) |
| Family | NXP VHV6 RF Power MOSFET (MRF6VP series) |
MRF6VP11KHR5 Pin-Konfiguration
| Pin 1 | Drain (RF) — Drain connection for the RF output path; externally DC-blocked and matched |
| Pin 2 | Gate — Gate input for the RF drive; needs DC bias return and RF choke network |
| Pin 3 | Source — Source connection; tied to system ground through the metalized ceramic body |
| Pin 4 | Drain (DC) — Drain connection for the 50 V DC supply; externally RF-choked |
Sicherer Arbeitsbereich (pulsed, 50 V class VHV6)
Typische Anwendungen
MRF6VP11KHR5 ist geeignet für 6 Anwendungs: Pulsed CO2 Laser Tube RF Excitation, RF Plasma Generation Source, Particle Accelerator RF Amplifier, Industrial RF Heating and Drying, MRI Spectroscopy Gradient Driver, Broadcast and VHF Transmitter Final Stage.
Pulsed CO2 Laser Tube RF Excitation
The MRF6VP11KHR5 delivers 1000 W peak pulsed RF at 81.36 MHz (the common CO2 laser excitation band) from its 50 V rail with 26 dB power gain, making it well suited as the final stage of a pulsed RF exciter for sealed CO2 laser tubes. The 110 V drain breakdown tolerates the large pulse overshoot generated by tube ignition transients, and the lateral MOSFET structure resists the load-VSWR swings that occur during plasma formation. Designers mount the NI-1230 flange to a copper spreader with circulating water or forced-air cooling, and add a circulator between device output and tube to dissipate reflected energy. The unmatched topology lets the engineer tune the output network precisely to the tube impedance.
Empfohlen
RF Plasma Generation Source
Plasma generation for semiconductor etch, surface treatment, and materials processing requires multi-hundred-watt pulsed RF in the 13.56 MHz to 100 MHz band with extreme tolerance to load mismatch. The MRF6VP11KHR5's 110 V Vdss, 26 dB gain at 130 MHz, and 1000 W pulsed rating allow a single-ended Class AB amplifier to drive a wide range of plasma chambers. The unmatched NI-1230 package gives the engineer freedom to tune the output network to the chamber's changing impedance during plasma ignition, and the lateral MOSFET allows short pulses with high duty cycle relative to bipolar parts.
Empfohlen
Particle Accelerator RF Amplifier
Small and mid-size scientific particle accelerators use solid-state RF amplifiers in the 100 MHz to 150 MHz range to drive cavity structures with 500 W to 1000 W pulsed peaks. The MRF6VP11KHR5's 26 dB gain lets a single stage replace a chain of smaller parts, simplifying the amplifier chain and improving phase stability across the pulse. Its ruggedness under mismatched loads is essential when a cavity arcs during conditioning, because the lateral N-channel design absorbs reflected energy without secondary breakdown. A circulator and reflected-power interlock are still recommended upstream of the device.
Empfohlen
Industrial RF Heating and Drying
Industrial RF drying of textiles, paper, and food uses 27 MHz to 100 MHz pulsed or CW sources at several hundred watts to drive applicator electrodes. The MRF6VP11KHR5 is well suited to pulsed-RF heating systems requiring 1000 W peak, where its high gain reduces the size of the driver chain and its lateral MOSFET structure supports long cable runs to the applicator. Use of an external matching transformer at the applicator side lets the engineer accommodate product variations while keeping the amplifier output stable.
Empfohlen
MRI Spectroscopy Gradient Driver
Scientific instrumentation such as NMR and MRI spectrometers needs very-clean pulsed RF at 100 MHz to 130 MHz for proton and other nuclei excitation. The MRF6VP11KHR5's 1.8 MHz to 150 MHz range covers the major nuclei Larmor frequencies for 2 T to 3 T magnets, with 1000 W peaks capable of driving a wide-bore coil. The unmatched NI-1230 package allows precise matching into the loaded coil, and the high breakdown voltage permits reliable operation through gradient-coil-induced load transients. Typical pairing is a low-noise driver stage feeding the MRF6VP11KHR5.
Empfohlen
Broadcast and VHF Transmitter Final Stage
Although designed primarily for pulsed service, the MRF6VP11KHR5 is also usable in low-duty pulsed driver or final stages of VHF transmitters in the 88 MHz to 108 MHz FM broadcast band and 54 MHz to 88 MHz TV channel band. With 26 dB gain and 1000 W peak capability, the part can drive antennas or act as the driver for higher-power tube amplifiers. Designers should add a low-pass output filter to meet FCC mask requirements and place a directional coupler with VSWR foldback to protect the part from antenna faults.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF6VP11KHR5 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF6VP11KHR6 | MRF6VP11KGSR5 | MRF6VP11KHR6-NXG | MRF1K50H |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-1230 | NI-1230 - same | NI-1230 - same | NI-1230 - same | NI-1230H-4 (compatible) |
| Family | NXP VHV6 RF Power MOSFET | NXP VHV6 RF Power MOSFET - same | NXP VHV6 RF Power MOSFET - same | NXP VHV6 RF Power MOSFET - same | NXP 50V RF Power (different die generation) |
| Operating Drain Voltage | 50 V | 50 V | 50 V | 50 V | 50 V |
| Peak RF Output Power | 1000 W pulsed | 1000 W pulsed | 1000 W pulsed | 1000 W pulsed | 1000 W pulsed (similar) |
| Screening Variant | Standard R5 (tape and reel) | Standard R6 bulk | GS screened + R5 | NXG qualification variant | Different family |
Wichtigste Unterscheidungsmerkmale
- 110 V Vdss breakdown - highest in VHV6 family (vs. MRF1K50H)
- 26 dB gain at 130 MHz for single-stage 1000 W output (vs. Generic MRF6VP-series parts)
- Unmatched NI-1230 package - flexibility over integration (vs. Internally-matched NI-1230 series)
Designhinweise
Estimated: with 1000 W pulsed RF output at 50% drain efficiency into a 50 V supply, average dissipation per pulse is on the order of 100-300 W during the pulse, and at typical 5-10% duty-cycle pulsed service the continuous dissipation is 5 W to 30 W. The NI-1230 ceramic flange must be mounted to a copper or aluminum spreader no greater than 0.5 C/W thermal resistance to ambient, with thermal compound such as Dow Corning 340 applied at a thickness of 0.001 to 0.002 inch. Junction temperature must stay below 225 C - verify this with the spreader thermal design rather than relying on the heatsink supplier's data alone.
The MRF6VP11KHR5 is unmatched, so the gate-side (input) and drain-side (output) matching networks must be designed and laid out with the shortest possible 50-ohm line from each package lead. Use a rigid coaxial or stripline substrate with controlled impedance at the carrier frequency; free wiring introduces parasitic inductance that detunes the network above 50 MHz. Place the gate-bias choke and gate-bypass capacitor within 5 mm of the gate lead, and put a separate gate-protection network (anti-parallel diodes to ground) close to the pin to drain any gate-leakage-induced charge.
Do not assume the 110 V breakdown headroom covers all transient conditions - reflected RF energy at high VSWR can drive peak drain voltage above 110 V if a voltage peak approaches the supply rail. Always insert a ferrite circulator or directional coupler with high-VSWR shutdown between the drain and the load. Also, do not key the drain supply without RF drive applied at the gate, because unloaded Class-AB bias can produce gain-collapse oscillations in unmatched ceramic packages. Use a sequencing circuit that enables gate drive first, then ramps the drain supply.
Pulse-RF systems radiating above 1000 W peak can produce significant harmonics and out-of-band emissions on the output side. Add a low-pass output filter with at least 30 dB attenuation at the second harmonic to comply with FCC/ETSI masks wherever the device is used for communication purposes, and an EMI gasket around the amplifier enclosure. For industrial, medical, and scientific uses where the device is not used as a transmitter, output filtering can be lighter, but a low-pass filter still reduces spurious excitation of the plasma or laser load.
Compliance-Informationen
RoHS, REACH, and lead-free status are not stated in the verified distributor and octopart listings; for industrial/scientific use the part is generally considered exempt from automotive standards. AEC-Q100 is not applicable because RF power MOSFETs are not qualified to that standard. For detailed compliance, request the NXP material declaration documents for the MRF6VP11KH family directly from NXP.
