MRF7S38010HSR5 - 2W RF Power MOSFET 3.4-3.6GHz NI-400 | NXP
Teilenummer: MRF7S38010HSR5 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $55.39 | $55,39 |
| 10 | $48.5 | $485,00 |
| 100 | $42 | $4.200,00 |
| 500 | $36.5 | $18.250,00 |
| 1.000 | $32 | $32.000,00 |
MRF7S38010HSR5 Übersicht
What is an RF power MOSFET? An RF power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor engineered to amplify high-frequency signals (typically tens of MHz to many GHz) with high gain, high efficiency, and ruggedness into mismatched loads. RF power MOSFETs sit within the broader taxonomy of power transistors -> discrete semiconductors -> semiconductor devices. They differ from low-frequency power MOSFETs by using a laterally diffused (LDMOS) or gallium-nitride (GaN) structure with carefully tuned input and output matching for a specific frequency band, allowing them to be used as the final or driver stage in cellular base-station transmitters, radar pulse amplifiers, and industrial RF heating sources.
The MRF7S38010HSR5 provides 15 dB of small-signal power gain at 3.5 GHz, operates from a 30 V DC drain supply with typical quiescent drain current of 160 mA, and is housed in the NI-400 ceramic air-cavity package. It uses NXP's high-frequency RF MOSFET process technology that combines lateral diffusion with a ceramic hermetic air cavity for low parasitic inductance and superior thermal transfer to the chassis flange.
This part targets small-cell and macro-cell base-station power amplifiers for WiMAX, LTE, and similar 3.5 GHz wireless services. It also serves commercial radar front-ends, microwave telemetry links, and test-bench RF amplifiers where a compact ceramic-packaged 2 W device is needed in a rugged air-cavity form.
When designing with this MOSFET, observe the golden RF rule: never operate the device without proper 50-ohm input and output matching networks and a DC-isolated bias-T on the drain, since RF energy reflected back into the drain can overheat the die. Provide a sufficient grounded heatsink flange on the NI-400 mounting surface to maintain case temperature below the datasheet maximum.
This page synthesizes distributor pricing tiers, carefully curated same-package drop-in alternative MPNs, and practical RF design notes that go beyond the manufacturer datasheet, helping engineers compare and source the right RF power transistor for their 3.5 GHz amplifier design.
Drop-in-Alternativen für MRF7S38010HSR5 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF7S38010HSR5 (gleiche Bauform und Footprint) – abweichend in Mounting Type, Output Power (Pout), Package / Case, Power Gain, Quiescent Drain Current (Idq).
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
Für dieses Produkt sind keine Drop-in-Alternativen verfügbar.
Alternativen anfordernMRF7S38010HSR5 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Transistortyp | N-Channel RF Power MOSFET |
| Gehäuse / Bauform | NI-400S-2S (NI-400 ceramic air-cavity) |
| Montageart | Chassis-mount, flange-mount |
| Drain-Source Voltage (Vds) | 30 V |
| Quiescent Drain Current (Idq) | 160 mA |
| Output Power (Pout) | 2 W |
| Frequency Band | 3.4 GHz to 3.6 GHz |
| Power Gain | 15 dB |
| Test Frequency | 3.6 GHz (per datasheet test conditions) |
| Technology | RF Power MOSFET (LDMOS-class process) |
| Configuration | Single N-channel, ceramic air-cavity |
| Tape & Reel | Suffix R5 (500 units / reel) |
MRF7S38010HSR5 Pin-Konfiguration
| Pin 1 | GATE — RF input / DC gate bias port |
| Pin 2 | DRAIN — RF output / DC drain supply port |
| Pin 3 | SOURCE / FLANGE — RF and DC ground; bolted to chassis heatsink |
DC Sicherer Arbeitsbereich
Typische Anwendungen
MRF7S38010HSR5 ist geeignet für 6 Anwendungs: Small-Cell 3.5 GHz Base-Station Power Amplifier, RF Driver Stage for Higher-Power Amplifiers, Microwave Telemetry and SCADA Links, Test-Bench RF Power Amplifier, Public-Safety and Private LTE Networks, Radar and IF Amplifier Stages.
Small-Cell 3.5 GHz Base-Station Power Amplifier
The MRF7S38010HSR5 is well suited as the final amplification stage in small-cell and picocell base-station radio units operating in the 3.4 GHz to 3.6 GHz LTE / WiMAX band. Its 15 dB of small-signal power gain and 2 W output match the 24 dBm to 33 dBm output requirement of compact urban small cells. Mounted with low-loss microstrip matching networks and a DC-isolated bias-T on the drain, it provides clean modulation fidelity at the lower power levels required for distributed radio networks. Unlike higher-power parts, the 2 W rating keeps heatsinking modest, easing the mechanical integration of dense small-cell arrays.
Empfohlen
RF Driver Stage for Higher-Power Amplifiers
In a multi-stage power amplifier chain, the MRF7S38010HSR5 serves as a 2 W intermediate driver placed ahead of a higher-power final stage such as the MRF7S38040HSR5. Its 15 dB gain provides effective drive level control while adding a single ceramic-packaged gain block, reducing BOM cost and complexity. The 30 V drain bias aligns with the rest of the NXP MRF7S-series lineup, allowing reuse of the same 30 V regulator design across the chain. Engineers typically bias this device in Class-AB for optimum linearity while maintaining adequate back-off efficiency.
Empfohlen
Microwave Telemetry and SCADA Links
Industrial telemetry and supervisory-control links operating in the 3.5 GHz band benefit from the MRF7S38010HSR5's narrow-band RF power density and rugged ceramic package. Its 15 dB gain lets a modest input drive deliver 2 W into the antenna, sufficient for several kilometers of line-of-sight telemetry over SCADA infrastructure. The NI-400 flange package can be bolted directly to a weather-sealed enclosure wall, providing both thermal dissipation and mechanical rigidity in harsh outdoor installations where vibration and temperature cycling are routine.
Empfohlen
Test-Bench RF Power Amplifier
RF test laboratories and design validation benches require small, well-characterized power amplifiers for characterizing antennas, filters, and RF front-ends. The MRF7S38010HSR5 with 2 W output and 15 dB gain provides a convenient building block for a 3.5 GHz bench amplifier, providing drive for a wide range of measurement scenarios without the cost and complexity of higher-power instruments. The 30 V supply requirement is easily met by standard laboratory power supplies, and the NI-400 chassis-mount package integrates cleanly into a bench instrument chassis with adequate heatsinking.
Empfohlen
Public-Safety and Private LTE Networks
The 3.5 GHz Citizens Broadband Radio Service (CBRS) and private LTE bands overlap the 3.4-3.6 GHz operating range of the MRF7S38010HSR5, making it a candidate for low-power radio heads in private cellular networks for utilities, airports, and large industrial campuses. Its 2 W output comfortably covers small coverage zones from a single antenna, and its ceramic package provides the mechanical reliability needed for 24/7 mounted operation. For systems requiring higher EIRP, MRF7S-series higher-power variants can be paired downstream without changing the upstream PCB layout family.
Empfohlen
Radar and IF Amplifier Stages
Short-range C-band radar systems and intermediate-frequency amplifier blocks in the 3.4-3.6 GHz region can leverage the MRF7S38010HSR5 as a compact power amplifier for the transmit chain. The 2 W output powers short-range weather, automotive, and industrial sensing radar front-ends, while the 15 dB gain reduces the gain burden on the upstream waveform generator. The ceramic NI-400 package's hermetic seal and low-loss ceramic feedthroughs preserve signal integrity at these frequencies where parasitic losses rapidly degrade system-level noise figure.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF7S38010HSR5 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF7S38015HSR5 | MRF7S38010HS | MRF7S38010H | MRF7S38025HSR5 | MRF7S38040HSR5 |
|---|---|---|---|---|---|---|
| Package | NI-400S-2S (ceramic air-cavity) | NI-400S-2S - same | NI-400S-2S - same | NI-400S-2S - same | NI-400S-2S - same | NI-400S-2S - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Pout) | 2 W | 5 W | 2 W | 2 W | 15 W | 40 W |
| Frequency Band | 3.4 GHz to 3.6 GHz | 3.4 GHz to 3.6 GHz | 3.4 GHz to 3.6 GHz | 3.4 GHz to 3.6 GHz | 3.4 GHz to 3.6 GHz | 3.4 GHz to 3.6 GHz |
| Power Gain | 15 dB | 15 dB (typical) | 15 dB | 15 dB | 13-14 dB (typical) | 12-13 dB (typical) |
| Drain Voltage (Vds) | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
| Packaging | Tape & Reel (R5) | Tape & Reel (R5) | Tray | Tray | Tape & Reel (R5) | Tape & Reel (R5) |
Wichtigste Unterscheidungsmerkmale
- Lower output power in the same NI-400 package family (vs. MRF7S38025HSR5)
- Same gain and packaging family at higher Pout (vs. MRF7S38015HSR5)
- Tape-and-reel packaging for high-volume assembly (vs. MRF7S38010HS)
Designhinweise
Estimated: at a 30 V drain, 2 W RF output, and 60% drain efficiency, the MRF7S38010HSR5 dissipates approximately 1.3 W as heat at full drive. The NI-400 ceramic flange is intended to be bolted to a chassis or external heatsink; thermal compound should be applied at the interface, and the mounting torque should follow the datasheet specification to avoid cracking the ceramic seal. Without adequate heatsinking, the junction will exceed safe ratings and degrade output power over time.
Use low-loss substrate (Rogers RO4003C or similar) for the input and output matching networks, with 50-ohm microstrip or stripline geometries controlled to within 0.1 mm. Place the gate and drain matching networks as close to the device leads as physically possible to minimize parasitic inductance at 3.5 GHz. The DC bias feeds must be isolated from the RF path with a broadband bias-T (or quarter-wave stub plus decoupling capacitor) to prevent RF leakage into the supply rail.
Do not operate the MRF7S38010HSR5 into an open-circuited or severely mismatched load. The reflected power can over-dissipate the die even when the input drive is small. Always include a properly rated isolator or a mismatch-tolerant bias network. Additionally, gate-bias sequencing must power the gate before applying drain voltage to avoid forward-biasing the gate-source junction and permanently damaging the device.
The 3.4-3.6 GHz operating band sits very close to the 5G n78 band shared by multiple wireless services, so radiated harmonics of the second (around 7 GHz) and third (around 10.5 GHz) order must be filtered at the output. A low-pass filter with a 5 GHz cutoff is typically placed between the drain matching network and the antenna connector, both for regulatory compliance and to prevent co-channel interference with other on-board RF blocks.
Compliance-Informationen
RoHS, REACH, lead-free, and halogen-free compliance status are not specified in the verified distributor web data and should be verified against the latest manufacturer datasheet. Conflict-mineral compliance is assumed standard for NXP/Freescale parts.
