MRFG35003ANT1 - 3.5GHz 3W 12V GaAs pHEMT RF FET | NXP
Teilenummer: MRFG35003ANT1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $14.2 | $14,20 |
| 10 | $12.8 | $128,00 |
| 100 | $11.4 | $1.140,00 |
| 500 | $10.1 | $5.050,00 |
| 1.000 | $8.95 | $8.950,00 |
MRFG35003ANT1 Übersicht
An RF power transistor (also called an RF power FET or RF MOSFET) is a specialized discrete semiconductor that amplifies high-frequency signals in the MHz-to-GHz range while delivering substantial output power to a load such as an antenna. Within the discrete-semiconductor hierarchy, RF power FETs sit under transistors and MOSFETs and are characterized by their frequency band, output power, gain, and efficiency rather than by switching speed. The GaAs pHEMT (Gallium Arsenide pseudomorphic High-Electron-Mobility Transistor) process used here delivers higher electron mobility and lower parasitic capacitance than silicon MOSFETs, which is why it dominates microwave power stages up to several GHz.
Key features include ACPR of -43 dBc measured at 5 MHz offset in a 3.84 MHz UMTS channel bandwidth, enabling the part to meet 3GPP spectral-emission masks for UMTS driver stages. The device is unmatched, allowing the PCB designer to set input and output matching networks for the specific frequency band and class-AB bias point. PLD-1.5 is a tape-over-reel plastic over-molded package with a copper flange for thermal dissipation, qualified for surface-mount production lines.
Typical applications include UMTS/WCDMA base-station driver amplifiers, MMDS (Multichannel Multipoint Distribution Service) transmit blocks at 2.5-3.5 GHz, BWA (Broadband Wireless Access) CPE front ends, and WLL (Wireless Local Loop) infrastructure. At 3.55 GHz the part targets the 3.5 GHz WLL/CPE band, where its 10.8 dB gain allows it to drive a final-stage LDMOS or another pHEMT to full output power.
Design considerations include adequate thermal management of the PLD-1.5 flange, proper sequencing of gate bias before drain voltage to prevent destructive turn-on transients, and tight PCB layout for the matched network. For reliable operation the operating channel temperature must be kept below 150 C as specified in the manufacturer datasheet.
This page synthesizes distributor pricing, same-brand and cross-brand drop-in alternatives, and practical design notes that go beyond what the datasheet PDF provides, helping RF design engineers shorten evaluation cycles for 3.5 GHz driver-stage designs.
Drop-in-Alternativen für MRFG35003ANT1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRFG35003ANR2
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRFG35003ANT1G
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRFG35005ANT1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRFG35010ANT1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRFG35003ANT1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRFG35003ANT1 |
| Device Type | RF Power Field-Effect Transistor |
| Process Technology | GaAs pHEMT |
| Gehäuse / Bauform | PLD-1.5 (CASE 466-03, Style 1) over-molded plastic |
| Montageart | Surface Mount |
| Drain-Source Voltage (Vds) | 12 V |
| Output Power (Pout) | 3 W |
| Power Gain (Gp) | 10.8 dB typical at 3.55 GHz |
| Drain Efficiency | 24.5% |
| Test Frequency | 3.55 GHz |
| Quiescent Drain Current (Idq) | 55 mA |
| ACPR | -43 dBc @ 5 MHz offset in 3.84 MHz channel |
| Characterized Frequency Range | 500 MHz to 5000 MHz |
| Matching | Unmatched (external input/output networks required) |
| Class of Operation | Class AB |
| Maximum Channel Temperature | 150 C |
| MSL-Level | 3 |
| Peak Reflow Temperature | 260 C, 40 s max |
| Terminal Finish | Matte Tin (e3 per JESD-609) |
| RoHS-Status | Compliant |
MRFG35003ANT1 Pin-Konfiguration
| Pin 1 | Gate — RF input gate; DC bias applied here for Class AB operation |
| Pin 2 | Drain — RF output / drain; 12 V supply applied with RF choke |
| Pin 3 | Source — Source / thermal pad on bottom of PLD-1.5; must be RF-grounded and thermally tied to PCB |
Sicherer Arbeitsbereich (DC) - typical boundary for 12 V operation
Typische Anwendungen
MRFG35003ANT1 ist geeignet für 6 Anwendungs: UMTS/WCDMA Driver Amplifier, MMDS Transmit Block (2.5-3.5 GHz), BWA / Fixed Wireless CPE Front End, WLL (Wireless Local Loop) Infrastructure, 3.5 GHz Test and Measurement Driver, Industrial Microwave Link Driver.
UMTS/WCDMA Driver Amplifier
The MRFG35003ANT1 is purpose-built for UMTS/WCDMA driver stages where its 10.8 dB gain and 24.5% drain efficiency let it sit between a small-signal MMIC gain block and a high-power LDMOS final. With ACPR of -43 dBc at 5 MHz offset in a 3.84 MHz channel, the device meets 3GPP spectral-emission masks without external linearization, simplifying base-station and repeater designs. Bias is set Class AB at 55 mA quiescent from the 12 V rail.
Empfohlen
MMDS Transmit Block (2.5-3.5 GHz)
Within Multichannel Multipoint Distribution Service (MMDS) Customer Premise Equipment (CPE), the MRFG35003ANT1 provides the driver output at 2.5-3.5 GHz. Its 3 W output, 12 V operation, and characterized frequency range covering 500 MHz to 5000 MHz allow a single part number to serve several MMDS channel plans, reducing BOM complexity. The unmatched topology lets the designer optimize harmonic load-pulling for digital QAM/PSK modulations used in MMDS.
Empfohlen
BWA / Fixed Wireless CPE Front End
For Broadband Wireless Access (BWA) and Fixed Wireless CPE radios operating in the 3.5 GHz band, the MRFG35003ANT1 supplies the transmit driver that feeds the antenna chain. Its 3 W output meets typical EIRP targets for small-cell and residential CPE, while the GaAs pHEMT process offers better noise-power ratio than equivalent silicon parts at these frequencies. The PLD-1.5 over-molded plastic package supports standard SMT production lines.
Empfohlen
WLL (Wireless Local Loop) Infrastructure
WLL base-station drivers benefit from the MRFG35003ANT1's 10.8 dB gain at 3.55 GHz and -43 dBc ACPR linearity. The 12 V rail simplifies power-supply design in cabinet-mounted equipment, and the device's 24.5% efficiency keeps thermal stress on the cabinet heatsink manageable. Class AB bias gives designers headroom to optimize linearity versus efficiency trade-offs in WLL voice/data transceivers.
Empfohlen
3.5 GHz Test and Measurement Driver
RF test equipment that needs a clean, repeatable 3.5 GHz driver source uses the MRFG35003ANT1 as a known-good gain block. Its unmatched topology, combined with 55 mA quiescent bias, makes it easy to characterize the part on a bench fixture. ACPR of -43 dBc gives margin when amplifying modulated test signals for ADC stress tests or RF conformance test benches.
Empfohlen
Industrial Microwave Link Driver
Point-to-point microwave links in the 3.5 GHz industrial band use the MRFG35003ANT1 as a transmit driver. The GaAs pHEMT process delivers low phase noise and high gain at microwave frequencies, while the 12 V supply rail matches typical industrial telecom -48 V to 12 V converter outputs. The PLD-1.5 package handles the thermal load in a sealed outdoor radio housing when properly heatsunk.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRFG35003ANT1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRFG35003ANR2 | MRFG35003ANT1G | MRFG35005ANT1 | MRFG35010ANT1 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | PLD-1.5 (CASE 466-03) | PLD-1.5 (CASE 466-03) | PLD-1.5 (CASE 466-03) | PLD-1.5 (CASE 466-03) | PLD-1.5 (CASE 466-03) |
| Output Power | 3 W | 3 W (identical die) | 3 W (identical die) | 5 W (+67%) | 10 W (+233%) |
| Drain Voltage Vds | 12 V | 12 V | 12 V | 12 V | 12 V |
| Process | GaAs pHEMT | GaAs pHEMT | GaAs pHEMT | GaAs pHEMT | GaAs pHEMT |
| Target Frequency Band | 3.5 GHz (500-5000 MHz characterized) | 3.5 GHz (identical die) | 3.5 GHz (identical die) | 3.5 GHz | 3.5 GHz |
Wichtigste Unterscheidungsmerkmale
- GaAs pHEMT process at 3.5 GHz gives higher gain and lower noise than silicon MOSFETs (vs. MRFG35003ANR2)
- 3 W output at 24.5% drain efficiency at 12 V from a PLD-1.5 plastic package (vs. MRFG35010ANT1)
- ACPR -43 dBc at 5 MHz offset in a 3.84 MHz UMTS channel (vs. MRFE6VP5300NR1)
- Wide characterized frequency range (500 MHz to 5000 MHz) (vs. MRFG35005ANT1)
Designhinweise
The PLD-1.5 package dissipates up to 3 W RF output plus DC quiescent losses; total dissipation can reach 5-6 W in Class AB operation at 12 V. Mount the copper flange on a PCB thermal pad with at least 4 thermal vias to an inner copper plane. Estimated: with theta_JC of roughly 5 C/W and a 25 C ambient, a 5 W dissipation yields a 25 C junction rise, well within the 150 C channel-temperature limit. Avoid placing the device near other heat sources; thermal coupling will degrade RF performance.
Because the device is unmatched, layout of the input and output matching networks is critical. Use 50 ohm microstrip transmission lines on a low-loss substrate (Rogers RO4003 or equivalent for 3.5 GHz). Keep the gate matching network short to minimize series inductance, and place RF chokes and bypass capacitors as close to the gate and drain leads as possible. Use a continuous ground plane under the matching area and stitch with vias every lambda/20 to suppress box resonances.
Always apply gate bias before applying the 12 V drain supply; reversing this sequence can drive the device into a high-Iq destructive mode. Use sequenced bias circuits or a gate clamp to prevent turn-on transients. Estimated: a 12 V drain applied with zero gate bias can pull the device into a high-current state that exceeds the 150 C channel-temperature limit in milliseconds. Do not operate the device without a proper heatsink path, and verify drain-current limiting on the bench before RF drive is applied.
At 3.55 GHz the ACPR of -43 dBc is achieved only with the recommended matching network topology; small deviations in source-pull or harmonic terminations will degrade linearity. For UMTS applications, add a small output harmonic trap to keep second- and third-harmonic content well below the 3GPP spectral mask. Use vector network analyzer load-pull to optimize matching for your specific PCB substrate.
The PLD-1.5 flange is the primary thermal and electrical source connection. Solder paste stencil should be designed for the leaded pads and a separate aperture for the central thermal pad, with a window-pitched aperture to avoid tombstoning. Peak reflow is 260 C for 40 seconds maximum per the JEDEC J-STD-020 MSL-3 profile; dry-pack the parts and limit floor life to 168 hours before re-bake if exposure occurs.
Compliance-Informationen
RoHS compliant per NXP/Freescale product page; matte-tin (e3) lead finish per JESD-609. Not AEC-Q100 qualified (RF power transistor, not automotive). Halogen-free status not stated in available data - set to unknown.
