MRFG35010R5 - 10W GaAs pHEMT RF Power FET, 3.5GHz | NXP
Teilenummer: MRFG35010R5 ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $34.2 | $342,00 |
| 100 | $28.75 | $2.875,00 |
| 500 | $24.1 | $12.050,00 |
| 1.000 | $21.4 | $21.400,00 |
MRFG35010R5 Übersicht
An RF Power FET (also called an RF power transistor or microwave power FET) is a specialized transistor optimized to deliver measurable RF power at high frequencies (typically 1 GHz to 100 GHz) rather than to perform small-signal switching. GaAs pHEMT is the dominant technology for sub-6 GHz high-efficiency power stages because GaAs offers higher electron mobility and higher breakdown field than silicon, supporting higher cutoff frequency (fT), higher gain, and superior power-added efficiency. Within the wider hierarchy (RF power FET -> power transistor -> discrete semiconductor -> electronic component), MRFG35010R5 sits as a depletion-mode n-channel GaAs pHEMT intended for class-AB or class-A linear amplification.
Key features include a minimum 10 dB power gain at 3.55 GHz, typical P1dB and Psat in the 10 W class, drain-source breakdown rating of 15 V, and the NI-360HF flanged ceramic package with low thermal resistance and bolt-down mechanical mounting. The flanged package provides a controlled-impedance microstrip launch and an exposed copper heatsink base for direct attachment to a system chassis or external heatsink, which is critical because GaAs devices are thermally sensitive and operate most reliably when the flange temperature is held below 100 °C.
Technically, the MRFG35010R5 uses an epitaxial GaAs/AlGaAs heterostructure with a Schottky gate. DC gate bias sets the quiescent drain current (Idq) to about 180 mA at 12 V Vds for class-AB operation, and RF input is delivered to the gate through an external matching network that presents the optimum gate impedance for maximum linear gain. Output matching transforms the 50 Ω load to the device's lower load-pull impedance at the fundamental frequency (3.55 GHz) and provides harmonic terminations that improve efficiency and spectral purity. Designers must observe the datasheet's bias sequencing (gate voltage applied before drain voltage, drain removed before gate) to prevent device damage.
Typical applications include 3.5 GHz WiMAX base-station power amplifiers, point-to-point microwave backhaul radios, military telemetry and EW transmitters, radar transmitters in S-band, and driver stages for higher-power GaAs or GaN amplifier chains. In a WiMAX or LTE-TDD base-station PA, MRFG35010R5 is typically biased class-AB and preceded by a smaller MRFG-series or MRF-series driver; in a microwave link, it forms the final stage behind a medium-power pre-driver and feeds an external bandpass filter before the antenna.
When designing with this device, the most important consideration is thermal management: estimate the dissipated power as (Vds × Idq − Pout/η) and verify that the flange can sink that heat through the chassis or heatsink. Equally important is RF stability - small loop gains above 6 GHz can cause parametric oscillation, so source-lead grounding inductance must be minimized and small ferrite beads or resistors are often added in the gate and drain bias feeds.
This page synthesizes distributor stock and pricing, cross-reference alternatives, application design notes, and parametric comparison data for MRFG35010R5 in a single source not available from the manufacturer datasheet alone.
Drop-in-Alternativen für MRFG35010R5 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRFG35010
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRFG35030R5
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRFG35010R5 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP USA Inc. (formerly Freescale Semiconductor) |
| Part Status | Obsolete |
| Transistortyp | pHEMT (GaAs pseudomorphic HEMT), N-Channel |
| Technology | Gallium Arsenide (GaAs) |
| Configuration | Single |
| Frequency | 3.55 GHz (S-band) |
| Gain | 10 dB (typical at 3.55 GHz) |
| Voltage - Test (Vds) | 12 V |
| Current - Test (Idq) | 180 mA |
| Power - Output (Pout) | 10 W (typical) |
| Voltage - Rated (Max Vds) | 15 V |
| Montageart | Surface Mount / Flange Mount |
| Gehäuse / Bauform | NI-360HF (ceramic flanged) |
| Supplier Device Package | NI-360HF |
| Packaging | Tape & Reel (R5 suffix) |
MRFG35010R5 Pin-Konfiguration
| Pin 1 | GATE — RF input / DC gate bias terminal (Schottky gate) |
| Pin 2 | DRAIN — RF output / DC drain bias terminal |
| Pin 3 | SOURCE / FLANGE — Source and thermal ground, connected to the NI-360HF copper flange base |
Sicherer Arbeitsbereich - DC
Typische Anwendungen
MRFG35010R5 ist geeignet für 6 Anwendungs: 3.5 GHz WiMAX Base-Station Power Amplifier, Point-to-Point Microwave Backhaul Radio, Military Telemetry and EW Transmitters, S-Band Radar Transmitter Driver, Industrial RF Heating and Plasma Generators, Test and Measurement Power Amplifier Module.
3.5 GHz WiMAX Base-Station Power Amplifier
The MRFG35010R5 is engineered for the final-stage RF power amplifier of 3.5 GHz WiMAX (IEEE 802.16) base stations and customer-premises equipment. The 10 W output power at 12 V Vds and 180 mA Idq provides the linear headroom required for OFDMA signals with 10–15 dB peak-to-average ratio, while the 10 dB gain allows a 100 mW driver stage to reach saturated output. Its GaAs pHEMT technology supports the spectral mask and EVM requirements of WiMAX Forum profiles without the harsh non-linearities of LDMOS. Placed behind a small MRF-series driver and feeding an external isolator and bandpass filter, the device delivers high PAE in class-AB and accepts CW or pulsed RF inputs.
Empfohlen
Point-to-Point Microwave Backhaul Radio
Point-to-point microwave backhaul radios operating in the 3.5 GHz band (and adjacent licensed or lightly-licensed FWA allocations) use the MRFG35010R5 as the final PA stage. The 10 W Pout and 10 dB gain at 3.55 GHz are well matched to typical link budgets requiring 30–35 dBm EIRP from a small dish antenna, while the NI-360HF flanged package bolts directly to the radio chassis for thermal grounding. In a typical FDD or TDD radio, MRFG35010R5 follows a medium-power pHEMT driver and feeds a waveguide or coax output filter; the 12 V bias is compatible with standard -48 V-to-12 V telecom DC-DC subsystems.
Empfohlen
Military Telemetry and EW Transmitters
Defense telemetry links and electronic-warfare (EW) subsystems operating in S-band (2–4 GHz) frequently specify the MRFG35010R5 because its GaAs pHEMT die is ruggedized against load-mismatch stress and its NI-360HF package survives shock and vibration environments. The 10 W pulsed or CW output at 3.55 GHz is sufficient for airborne telemetry transmitters, decoy RF payloads, and small UAV data links; the device is also deployed as a broadband driver for higher-power TWT or GaN final stages. Compliance with MIL-STD-202 test methods is typically verified by the system integrator using the part's environmental test data.
Empfohlen
S-Band Radar Transmitter Driver
In S-band (3.5 GHz) marine and weather radar systems, the MRFG35010R5 serves as a driver stage for the high-power magnetron or GaN final amplifier. The 10 W pulsed power, 10 dB gain, and 12 V operation align with the requirements of short-pulse (1–5 µs) radar modulators that need a stable, repeatable pulse-to-pulse amplitude. Its low thermal resistance from the NI-360HF flange allows operation at high duty cycles (5–10%) without junction-temperature derating. The GaAs pHEMT linearity also supports pulse-compression waveforms such as LFM and P1-coded chirps.
Empfohlen
Industrial RF Heating and Plasma Generators
Industrial RF heating systems operating at 3.55 GHz (a frequency used in certain plasma and materials-processing applications) can use the MRFG35010R5 as a CW power source. The 10 W output and the 12 V, 180 mA bias point permit efficient 40–50% PAE in class-AB operation, and the NI-360HF flange supports direct water-cooling or large-fin heatsink attachment. Designers should add external circulator protection because industrial plasma loads present highly variable VSWR, which can stress the GaAs die. The device's CW capability makes it a flexible alternative to magnetron sources for low-power plasma ignition systems.
Empfohlen
Test and Measurement Power Amplifier Module
ATE (automatic test equipment) and bench RF test setups needing a calibrated 10 W CW or pulsed source at 3.55 GHz can integrate MRFG35010R5 as the final stage of a driver-and-PA test amplifier module. The known 10 dB gain, predictable S-parameters, and 12 V bias simplify calibration transfer when measuring antenna patterns, RF filter insertion loss, or low-noise receiver sensitivity. Because MRFG35010R5 is now obsolete, instrument manufacturers should reserve remaining stock for service-only spares and qualify a currently active GaN alternative for new test-platform designs.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRFG35010R5 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRFG35010 | MRFG35030R5 |
|---|---|---|---|
| Brand | NXP Semiconductors (formerly Freescale) | NXP Semiconductors | NXP Semiconductors |
| Package | NI-360HF | NI-360HF - same | NI-360HF - same |
| Technology | GaAs pHEMT | GaAs pHEMT | GaAs pHEMT |
| Frequency | 3.55 GHz | 3.55 GHz | 3.55 GHz |
| Output Power | 10 W | 9 W (-10%) | 30 W (+200%) |
| Gain | 10 dB | 10 dB | 10 dB (typical) |
| Test Voltage (Vds) | 12 V | 12 V | 12 V |
| Lifecycle Status | Obsolete | Obsolete | Obsolete |
Wichtigste Unterscheidungsmerkmale
- Tape-and-reel packaging format (vs. MRFG35010)
- Higher quiescent bias and 10 W output rating (vs. MRFG35010)
- Lower output power, lower quiescent current than 30 W sibling (vs. MRFG35030R5)
Designhinweise
Estimated: at 12 V Vds, 180 mA Idq, 10 W Pout, and 40% PAE, the MRFG35010R5 dissipates roughly 12 V × 0.18 A − 10 W / 0.40 = 0.16 W (output-only) or approximately 2.16 W (after subtracting RF output). The NI-360HF flange must be bolted to a copper or aluminum heat spreader with thermal grease, and the flange temperature should be held below 100 °C. For CW operation at full power, a small clip-on heatsink or fan-forced airflow is recommended.
Use an RF substrate such as Rogers RO4003C (εr = 3.55) with 0.5 oz copper for the input and output microstrip matching networks. Keep gate and drain leads as short as possible, and place bypass capacitors (100 pF and 10 nF in parallel) directly at the bias feed points to suppress low-frequency parasitic oscillation. Source-lead grounding inductance must be minimized - multiple via arrays under the NI-360HF flange are mandatory to prevent parametric oscillation above 6 GHz.
Bias sequencing failure is the most common cause of MRFG35010R5 destruction: the gate must reach its negative bias before the drain voltage is applied, and the drain voltage must be removed before the gate bias. Add a 10 kΩ gate-source resistor and a zener clamp to protect the Schottky gate from ESD and in-rush transients. Never operate the device without a 50 Ω RF load at the output - even momentary open-circuit or short-circuit conditions can cause load-pull stress that exceeds the die's safe operating area.
The GaAs pHEMT die has high gain at low frequencies and can oscillate below 1 GHz if the bias-T networks are not well damped. Place a small ferrite bead or 10 Ω resistor in series with the gate and drain bias feeds to suppress out-of-band oscillation. Verify stability by sweeping the input S11 and looking for negative-resistance regions in simulation (Keysight ADS or AWR MWO). For production builds, add a directional coupler and reflected-power detector to protect the device against antenna VSWR events.
Compliance-Informationen
RoHS, REACH, and lead-free status not stated in the verified web data. MRFG35010R5 was originally released under Freescale Semiconductor branding (pre-NXP acquisition); some legacy GaAs pHEMT parts predate RoHS conversion or were qualified under RoHS exemptions for high-frequency RF power devices. Designers targeting EU markets should request a compliance letter from the distributor or migrate to an actively supported alternative.
