MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron
Teilenummer: MT40A256M16GE-083E ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $3.2 | $3,20 |
| 10 | $2.95 | $29,50 |
| 100 | $2.7 | $270,00 |
| 500 | $2.45 | $1.225,00 |
| 1.000 | $2.2 | $2.200,00 |
MT40A256M16GE-083E Übersicht
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of DDR DRAM, sitting in the memory hierarchy above DDR3 and below DDR5. It is a volatile semiconductor memory that stores each bit in a capacitor-based cell refreshed at regular intervals. Compared with DDR3, DDR4 lowers the operating voltage from 1.5 V to 1.2 V, doubles the bank count to 16 (with bank groups), and raises peak data rates to 3200 MT/s and beyond, making it the dominant main-memory technology for embedded and server platforms of its generation.
Key features of this device include a 4 Gbit density in a wide x16 organization suited to controllers with 16-bit memory buses, the DDR4-2400 speed grade (CL17 at 1.2 V per JEDEC speed bin -083E), and low-power features such as DLL-off mode and max power-down. The 96-ball FBGA (9 x 14 mm) footprint is the industry-standard package for x16 DDR4 components, enabling second-source layouts.
Architecturally, the device is organized into bank groups that allow faster random column access through fine-grained interleaving, and it implements on-die termination (ODT) to preserve signal integrity on high-speed fly-by routed command/address buses.
Typical applications include embedded industrial controllers, networking equipment line cards, set-top boxes, and automotive/telematics head units where 16-bit-wide DDR4 interfaces are common.
Design consideration: DDR4 fly-by routing requires careful length matching and VTT termination on address/command lines; consult the Micron DDR4 system design guide for VTT and on-die termination settings.
This page synthesizes distributor pricing, cross-referenced drop-in alternatives (Samsung, Nanya, and Micron speed/grade variants), and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für MT40A256M16GE-083E – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MT40A256M16GE-083E (gleiche Bauform und Footprint) – abweichend in Package, Clock Frequency, Organization, Interface, Supply Voltage (VDD).
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MT40A256M16GE-083E IT:B
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT40A256M16GE-083E-AUT
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT40A256M16GE-083E-AIT
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT40A256M16GE-075E:B
✅ Drop-In✓ Auf Lager
$3.95 / Stück
Datenblatt ansehen →K4A4G165WE-BCPB
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
NT5AD256M16B2-GNI
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT40A256M16LY-062E:F
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT40A256M16GE-083E Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR4 SDRAM |
| Density | 4 Gbit |
| Speicherorganisation | 256M x 16 |
| Clock Frequency | 1200 MHz (DDR4-2400) |
| Versorgungsspannung | 1.2 V |
| Gehäuse | 96-ball FBGA, 9 x 14 mm |
| Montageart | Surface Mount |
| Schnittstelle | Parallel |
| Technology | CMOS DRAM |
| ECCN | EAR99 |
| Country of Origin | China |
| Halogenfrei | Compliant |
| Lead Free | Yes |
| Introduction Date | August 2017 |
| Lifecycle | Obsolete / End of Life (per distributor cross-reference data) |
MT40A256M16GE-083E 96-ball fbga, 9 x 14 mm Pinbelegungsleitfaden
Pinbelegung für MT40A256M16GE-083E (96-ball fbga, 9 x 14 mm-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für MT40A256M16GE-083E.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
MT40A256M16GE-083E ist geeignet für 6 Anwendungs: Industrial Embedded Controllers, Networking and Communication Equipment, Automotive Telematics and Infotainment, Set-Top Boxes and Smart TV Platforms, Test and Measurement Instrumentation, IoT Gateways and Smart Home Hubs.
Industrial Embedded Controllers
Industrial PLCs, HMIs, and edge controllers frequently use 16-bit DDR4 interfaces with 4 Gbit density, exactly matching the MT40A256M16GE-083E's 256M x 16 organization at DDR4-2400. The 1.2 V supply reduces DRAM power draw compared to DDR3, which matters in fanless sealed enclosures where every watt affects thermal design. Memory sits on the controller's dedicated DDR4 PHY with fly-by routing and ODT, delivering roughly 4.8 GB/s peak bandwidth from a single x16 device - sufficient for Linux-class SoCs and real-time data logging. For extended industrial temperatures, the pin-compatible MT40A256M16GE-083E IT variant should be specified instead of the commercial grade.
Empfohlen
Networking and Communication Equipment
Switch, router, and CPE line cards use x16 DDR4 components for packet buffering and management-CPU main memory. The MT40A256M16GE-083E provides 4 Gbit per device at DDR4-2400, and two devices in 32-bit configuration deliver about 9.6 GB/s peak bandwidth - adequate for gigabit-class forwarding buffers and QoS queues. The 96-ball FBGA 9 x 14 mm footprint allows dense multi-device layouts on switch motherboards, and the DDR4 bank-group architecture improves random access efficiency for queue management. Second-source qualification with Samsung K4A4G165WE-BCPB on the identical footprint is a common supply-chain strategy in this sector.
Empfohlen
Automotive Telematics and Infotainment
Head units, telematics gateways, and digital clusters require automotive-qualified DRAM; for these platforms the MT40A256M16GE-083E-AUT suffix provides the same 4 Gbit, 256M x 16, DDR4-2400 silicon with Micron's automotive qualification flow. A single AUT device offers approximately 4.8 GB/s peak bandwidth at 1.2 V, supporting Android Automotive or QNX graphics stacks when paired in 32-bit or 64-bit configurations. The automotive grade also brings documented temperature and reliability screening that commercial parts lack. Designers must specify -AUT (or -AAT/-AIT) explicitly on the BOM, as commercial -083E stock is not acceptable for automotive platforms.
Empfohlen
Set-Top Boxes and Smart TV Platforms
Broadcast and OTT set-top box SoCs commonly attach one or two x16 DDR4 devices as main memory. The MT40A256M16GE-083E's 4 Gbit capacity supports 512 MB configurations (two devices) or 256 MB (single device, half-organization use), adequate for 4K HEVC decode buffering on many STB platforms. DDR4-2400 at 1.2 V lowers idle power for always-on standby compliance (e.g., EU energy regulations), and DLL-off plus max power-down modes reduce consumption further during low-activity states. The standard 96-ball FBGA footprint keeps the memory within a short point-to-point trace of the SoC DDR PHY, simplifying two-layer-stacked PCB cost targets.
Empfohlen
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and protocol analyzers use DDR4 SDRAM as deep acquisition memory. The MT40A256M16GE-083E's DDR4-2400 speed and x16 wide bus support sustained streaming of sampled data into capture buffers, while 4 Gbit density per device enables multi-gigasample record lengths when 8-16 devices are ganged on 64/128-bit buses. The 1.2 V operation and bank-group architecture improve throughput for interleaved write streams from front-end ADCs. Because these instruments demand long production lifetimes, designers should pair commercial-grade stock with a qualified second source (Samsung K4A4G165WE-BCPB) to hedge against the -083E commercial EOL.
Empfohlen
IoT Gateways and Smart Home Hubs
Smart home hubs, industrial IoT gateways, and edge AI boxes typically run Linux on application processors with 16-bit DDR4 memory interfaces. The MT40A256M16GE-083E supplies 512 MB (4 Gbit) of main memory - the sweet spot for MQTT broker, Zigbee/Thread stack, and lightweight container workloads - while drawing DRAM power at 1.2 V suitable for passively cooled or PoE-powered enclosures. DDR4-2400 delivers about 4.8 GB/s peak, sufficient for concurrent sensor aggregation and local inference. The wide x16 organization also allows single-device designs that reduce BOM cost and PCB area compared to two x8 parts.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MT40A256M16GE-083E – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MT40A256M16GE-083E IT:B | MT40A256M16GE-083E-AUT | K4A4G165WE-BCPB | NT5AD256M16B2-GNI |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | Nanya Technology |
| Package | 96-ball FBGA (9x14 mm) | 96-ball FBGA (9x14 mm) - same | 96-ball FBGA (9x14 mm) - same | 96-ball FBGA (9x14 mm) - same | 96-ball FBGA (9x14 mm) - same |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Lifecycle Status | EOL / Obsolete (base commercial grade) | EOL (broker stock only) | Listed in Micron part catalog (active) | Active second source | Active second source |
Wichtigste Unterscheidungsmerkmale
- Extended industrial temperature availability (vs. K4A4G165WE-BCPB)
- Automotive qualified drop-in option (vs. NT5AD256M16B2-GNI)
- DDR4-2666 upgrade path without PCB change (vs. MT40A256M16GE-083E IT:B)
- Supply continuity trade-off (vs. MT40A256M16GE-083E-AUT)
Designhinweise
At DDR4-2400 (1200 MHz clock), route the address/command/control bus in fly-by topology with VTT termination at 0.6 V (half of VDDQ 1.2 V). Keep DQ/DQS trace length matching within intra-lane skew windows and route over continuous reference planes. Coordinate on-die termination (ODT) settings between the memory controller and the MT40A256M16GE-083E during write leveling and read training. Micron publishes IBIS models for the 4Gb DDR4 family - run pre-layout simulation before finalizing stackup and trace impedance.
The base commercial MT40A256M16GE-083E:B is EOL per distributor cross-reference data, and open-market stock carries a reported 53% counterfeit threat. Source only from authorized distributors (DigiKey, Mouser) or verified XAIPART supply. If second-sourcing to Samsung K4A4G165WE-BCPB or Nanya NT5AD256M16B2-GNI, remember that SPD contents, timing registers, and boot-time training sequences differ even on pin-compatible footprints - update bootloader memory-init code and re-run margin validation on real hardware before releasing the change.
DRAM dynamic power scales with VDD squared and activity factor: at 1.2 V the DDR4 device draws substantially less core current than a comparable DDR3 part at 1.5 V (a roughly 36% reduction on the voltage term alone). Budget VDD/VDDQ rails at 1.2 V plus- minus 3% per JEDEC DDR4 practice, and size the VTT termination regulator for the address bus load - Estimated: for 4 devices on a shared fly-by bus, VTT transient currents of several hundred milliamps are typical. Use separate bulk and 0.1 uF per-ball-pair decoupling near the 96-ball FBGA.
The 96-ball FBGA (9 x 14 mm) with 0.8 mm ball pitch requires a dedicated land pattern per Micron's package outline drawing; do not reuse DDR3 96-ball land patterns blindly as ballout assignments changed between generations. Follow moisture sensitivity handling - bake per Micron MSL guidance if floor-life is exceeded before reflow. Place decoupling capacitors on the far side of the board directly beneath the ball array to minimize loop inductance on the 1.2 V rail.
Compliance-Informationen
Halogen free compliant and lead free per GlobalSpec supplier data; FindIC lists FBGA-96 lead free. ECCN EAR99. AEC-Q100 qualification applies only to the -AUT suffix variant.
