MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron
부품 번호: MT40A256M16GE-083E ✗ 단종| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $3.2 | $3.20 |
| 10 | $2.95 | $29.50 |
| 100 | $2.7 | $270.00 |
| 500 | $2.45 | $1,225.00 |
| 1,000 | $2.2 | $2,200.00 |
MT40A256M16GE-083E 개요
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of DDR DRAM, sitting in the memory hierarchy above DDR3 and below DDR5. It is a volatile semiconductor memory that stores each bit in a capacitor-based cell refreshed at regular intervals. Compared with DDR3, DDR4 lowers the operating voltage from 1.5 V to 1.2 V, doubles the bank count to 16 (with bank groups), and raises peak data rates to 3200 MT/s and beyond, making it the dominant main-memory technology for embedded and server platforms of its generation.
Key features of this device include a 4 Gbit density in a wide x16 organization suited to controllers with 16-bit memory buses, the DDR4-2400 speed grade (CL17 at 1.2 V per JEDEC speed bin -083E), and low-power features such as DLL-off mode and max power-down. The 96-ball FBGA (9 x 14 mm) footprint is the industry-standard package for x16 DDR4 components, enabling second-source layouts.
Architecturally, the device is organized into bank groups that allow faster random column access through fine-grained interleaving, and it implements on-die termination (ODT) to preserve signal integrity on high-speed fly-by routed command/address buses.
Typical applications include embedded industrial controllers, networking equipment line cards, set-top boxes, and automotive/telematics head units where 16-bit-wide DDR4 interfaces are common.
Design consideration: DDR4 fly-by routing requires careful length matching and VTT termination on address/command lines; consult the Micron DDR4 system design guide for VTT and on-die termination settings.
This page synthesizes distributor pricing, cross-referenced drop-in alternatives (Samsung, Nanya, and Micron speed/grade variants), and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: MT40A256M16GE-083E — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MT40A256M16GE-083E (동일 폼 팩터 및 풋프린트) — 차이점: Package, Clock Frequency, Organization, Interface, Supply Voltage (VDD).
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MT40A256M16GE-083E IT:B
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT40A256M16GE-083E-AUT
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT40A256M16GE-083E-AIT
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT40A256M16GE-075E:B
✅ 드롭인✓ 재고 있음
$3.95 / 개
데이터시트 보기 →K4A4G165WE-BCPB
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
NT5AD256M16B2-GNI
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT40A256M16LY-062E:F
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT40A256M16GE-083E 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| Density | 4 Gbit |
| 메모리 구성 | 256M x 16 |
| Clock Frequency | 1200 MHz (DDR4-2400) |
| 공급 전압 | 1.2 V |
| 패키지 | 96-ball FBGA, 9 x 14 mm |
| 실장 유형 | Surface Mount |
| 인터페이스 | Parallel |
| Technology | CMOS DRAM |
| ECCN | EAR99 |
| Country of Origin | China |
| 할로겐 프리 | Compliant |
| Lead Free | Yes |
| Introduction Date | August 2017 |
| Lifecycle | Obsolete / End of Life (per distributor cross-reference data) |
MT40A256M16GE-083E 96-ball fbga, 9 x 14 mm 핀 구성 가이드
MT40A256M16GE-083E(96-ball fbga, 9 x 14 mm 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: MT40A256M16GE-083E.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
MT40A256M16GE-083E 적합 용도: 6 애플리케이션s: Industrial Embedded Controllers, Networking and Communication Equipment, Automotive Telematics and Infotainment, Set-Top Boxes and Smart TV Platforms, Test and Measurement Instrumentation, IoT Gateways and Smart Home Hubs.
Industrial Embedded Controllers
Industrial PLCs, HMIs, and edge controllers frequently use 16-bit DDR4 interfaces with 4 Gbit density, exactly matching the MT40A256M16GE-083E's 256M x 16 organization at DDR4-2400. The 1.2 V supply reduces DRAM power draw compared to DDR3, which matters in fanless sealed enclosures where every watt affects thermal design. Memory sits on the controller's dedicated DDR4 PHY with fly-by routing and ODT, delivering roughly 4.8 GB/s peak bandwidth from a single x16 device - sufficient for Linux-class SoCs and real-time data logging. For extended industrial temperatures, the pin-compatible MT40A256M16GE-083E IT variant should be specified instead of the commercial grade.
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Networking and Communication Equipment
Switch, router, and CPE line cards use x16 DDR4 components for packet buffering and management-CPU main memory. The MT40A256M16GE-083E provides 4 Gbit per device at DDR4-2400, and two devices in 32-bit configuration deliver about 9.6 GB/s peak bandwidth - adequate for gigabit-class forwarding buffers and QoS queues. The 96-ball FBGA 9 x 14 mm footprint allows dense multi-device layouts on switch motherboards, and the DDR4 bank-group architecture improves random access efficiency for queue management. Second-source qualification with Samsung K4A4G165WE-BCPB on the identical footprint is a common supply-chain strategy in this sector.
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Automotive Telematics and Infotainment
Head units, telematics gateways, and digital clusters require automotive-qualified DRAM; for these platforms the MT40A256M16GE-083E-AUT suffix provides the same 4 Gbit, 256M x 16, DDR4-2400 silicon with Micron's automotive qualification flow. A single AUT device offers approximately 4.8 GB/s peak bandwidth at 1.2 V, supporting Android Automotive or QNX graphics stacks when paired in 32-bit or 64-bit configurations. The automotive grade also brings documented temperature and reliability screening that commercial parts lack. Designers must specify -AUT (or -AAT/-AIT) explicitly on the BOM, as commercial -083E stock is not acceptable for automotive platforms.
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Set-Top Boxes and Smart TV Platforms
Broadcast and OTT set-top box SoCs commonly attach one or two x16 DDR4 devices as main memory. The MT40A256M16GE-083E's 4 Gbit capacity supports 512 MB configurations (two devices) or 256 MB (single device, half-organization use), adequate for 4K HEVC decode buffering on many STB platforms. DDR4-2400 at 1.2 V lowers idle power for always-on standby compliance (e.g., EU energy regulations), and DLL-off plus max power-down modes reduce consumption further during low-activity states. The standard 96-ball FBGA footprint keeps the memory within a short point-to-point trace of the SoC DDR PHY, simplifying two-layer-stacked PCB cost targets.
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Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and protocol analyzers use DDR4 SDRAM as deep acquisition memory. The MT40A256M16GE-083E's DDR4-2400 speed and x16 wide bus support sustained streaming of sampled data into capture buffers, while 4 Gbit density per device enables multi-gigasample record lengths when 8-16 devices are ganged on 64/128-bit buses. The 1.2 V operation and bank-group architecture improve throughput for interleaved write streams from front-end ADCs. Because these instruments demand long production lifetimes, designers should pair commercial-grade stock with a qualified second source (Samsung K4A4G165WE-BCPB) to hedge against the -083E commercial EOL.
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IoT Gateways and Smart Home Hubs
Smart home hubs, industrial IoT gateways, and edge AI boxes typically run Linux on application processors with 16-bit DDR4 memory interfaces. The MT40A256M16GE-083E supplies 512 MB (4 Gbit) of main memory - the sweet spot for MQTT broker, Zigbee/Thread stack, and lightweight container workloads - while drawing DRAM power at 1.2 V suitable for passively cooled or PoE-powered enclosures. DDR4-2400 delivers about 4.8 GB/s peak, sufficient for concurrent sensor aggregation and local inference. The wide x16 organization also allows single-device designs that reduce BOM cost and PCB area compared to two x8 parts.
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추천 제품 요약
엔지니어링 참조 데이터: MT40A256M16GE-083E — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MT40A256M16GE-083E IT:B | MT40A256M16GE-083E-AUT | K4A4G165WE-BCPB | NT5AD256M16B2-GNI |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | Nanya Technology |
| Package | 96-ball FBGA (9x14 mm) | 96-ball FBGA (9x14 mm) - same | 96-ball FBGA (9x14 mm) - same | 96-ball FBGA (9x14 mm) - same | 96-ball FBGA (9x14 mm) - same |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Lifecycle Status | EOL / Obsolete (base commercial grade) | EOL (broker stock only) | Listed in Micron part catalog (active) | Active second source | Active second source |
주요 차별점
- Extended industrial temperature availability (vs K4A4G165WE-BCPB)
- Automotive qualified drop-in option (vs NT5AD256M16B2-GNI)
- DDR4-2666 upgrade path without PCB change (vs MT40A256M16GE-083E IT:B)
- Supply continuity trade-off (vs MT40A256M16GE-083E-AUT)
설계 노트
At DDR4-2400 (1200 MHz clock), route the address/command/control bus in fly-by topology with VTT termination at 0.6 V (half of VDDQ 1.2 V). Keep DQ/DQS trace length matching within intra-lane skew windows and route over continuous reference planes. Coordinate on-die termination (ODT) settings between the memory controller and the MT40A256M16GE-083E during write leveling and read training. Micron publishes IBIS models for the 4Gb DDR4 family - run pre-layout simulation before finalizing stackup and trace impedance.
The base commercial MT40A256M16GE-083E:B is EOL per distributor cross-reference data, and open-market stock carries a reported 53% counterfeit threat. Source only from authorized distributors (DigiKey, Mouser) or verified XAIPART supply. If second-sourcing to Samsung K4A4G165WE-BCPB or Nanya NT5AD256M16B2-GNI, remember that SPD contents, timing registers, and boot-time training sequences differ even on pin-compatible footprints - update bootloader memory-init code and re-run margin validation on real hardware before releasing the change.
DRAM dynamic power scales with VDD squared and activity factor: at 1.2 V the DDR4 device draws substantially less core current than a comparable DDR3 part at 1.5 V (a roughly 36% reduction on the voltage term alone). Budget VDD/VDDQ rails at 1.2 V plus- minus 3% per JEDEC DDR4 practice, and size the VTT termination regulator for the address bus load - Estimated: for 4 devices on a shared fly-by bus, VTT transient currents of several hundred milliamps are typical. Use separate bulk and 0.1 uF per-ball-pair decoupling near the 96-ball FBGA.
The 96-ball FBGA (9 x 14 mm) with 0.8 mm ball pitch requires a dedicated land pattern per Micron's package outline drawing; do not reuse DDR3 96-ball land patterns blindly as ballout assignments changed between generations. Follow moisture sensitivity handling - bake per Micron MSL guidance if floor-life is exceeded before reflow. Place decoupling capacitors on the far side of the board directly beneath the ball array to minimize loop inductance on the 1.2 V rail.
규정 준수 정보
Halogen free compliant and lead free per GlobalSpec supplier data; FindIC lists FBGA-96 lead free. ECCN EAR99. AEC-Q100 qualification applies only to the -AUT suffix variant.
