MT40A2G8JE-062E AAT:E - 16Gb DDR4-3200 Automotive SDRAM | Micron
Teilenummer: MT40A2G8JE-062E AAT:E ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $13.5 | $13,50 |
| 10 | $12.6 | $126,00 |
| 100 | $11.45 | $1.145,00 |
| 500 | $10.6 | $5.300,00 |
| 1.000 | $9.85 | $9.850,00 |
MT40A2G8JE-062E AAT:E Übersicht
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of JEDEC-defined DDR DRAM, sitting within the memory IC hierarchy under DRAM components. Compared with DDR3, DDR4 halves the interface voltage to 1.2V, doubles the internal bank count (16 banks in 4 groups for x8), and adds features such as on-die internal adjustable VREFDQ generation, bank-group architecture, and tighter command signaling, enabling higher data rates with lower power per transfer.
Key features of this device include the 16Gbit single-die density in a x8 organization, DDR4-3200 speed grade (-062E, 19 ns access time), 1.2V pseudo open-drain I/O, and a VPP supply of 1.2V (tolerance -125 mV/+250 mV per datasheet). The AAT automotive temperature rating (-40C to +105C) and Micron's automotive qualification make it suitable for under-hood-adjacent and high-reliability environments. The refresh interval extends at the extended temperature range, and internal refresh management simplifies controller integration.
Technically, the Z32D die uses 16 internal banks (x8: 4 groups of 4) with bank-group interleaving that sustains DDR4-3200 throughput while keeping row-activation overhead bounded. On-die, internal, adjustable VREFDQ generation removes the need for an external reference voltage rail on the DQ byte, reducing BOM count and board-layer requirements. POD12 (1.2V pseudo open-drain) signaling reduces termination power versus DDR3.
Typical applications include automotive ADAS image-processing and sensor-fusion platforms, telematics and gateway modules, industrial gateways and edge-compute controllers, and networking line-card buffering where 16Gbit density, x8 width, and AEC-oriented quality are required.
Design consideration: at DDR4-3200, fly-by command/address routing with per-DQ-byte length matching and VTT termination is essential; verify controller drive strength and ODT settings against the Micron datasheet IBIS models before tape-out.
This page synthesizes distributor pricing, drop-in alternatives (including the Alliance Memory second source), and practical design notes not consolidated in the manufacturer datasheet. Pricing references are as of 2026-09-02.
Drop-in-Alternativen für MT40A2G8JE-062E AAT:E – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MT40A2G8JE-062E AIT:E
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT40A2G8JE-062E AUT:E
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT40A2G8JE-062E AIT:E
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT40A2G8JE-062E AAT:E
✅ Drop-In✓ Auf Lager
$9.85 / Stück
Datenblatt ansehen →MT40A2G8JE-062E AAT:E Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR4 SDRAM |
| Density | 16 Gbit |
| Speicherorganisation | 2G x 8 |
| Speed Grade | DDR4-3200 (-062E) |
| Clock Frequency | 1600 MHz |
| Access Time | 19 ns |
| Supply Voltage VDD | 1.2 V +/- 60 mV |
| Supply Voltage VPP | 1.2 V (-125 mV / +250 mV) |
| I/O Type | POD12 (1.2V pseudo open-drain) |
| Internal Banks | 16 (x8: 4 groups of 4) |
| VREFDQ | On-die, internal, adjustable generation |
| Betriebstemperatur | -40C to +105C (AAT automotive) |
| Gehäuse | 78-ball FBGA (9 x 11 mm) |
| FBGA Code | D8BHT |
| Die | Z32D |
| Montageart | Surface Mount |
| Automotive Qualification | Yes (AAT automotive grade) |
MT40A2G8JE-062E AAT:E 78-ball fbga (9 x 11 mm) Pinbelegungsleitfaden
Pinbelegung für MT40A2G8JE-062E AAT:E (78-ball fbga (9 x 11 mm)-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für MT40A2G8JE-062E AAT:E.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
MT40A2G8JE-062E AAT:E ist geeignet für 6 Anwendungs: Automotive ADAS Compute, Telematics and Gateway Modules, Industrial Edge Computing, Networking Line Cards, Medical Imaging and Diagnostics, Test and Measurement Instruments.
Automotive ADAS Compute
The MT40A2G8JE-062E AAT:E fits ADAS domain controllers that buffer multi-camera video and run perception workloads. Its 16Gbit density in a single x8 component supports frame buffering for 4-8 camera inputs, while DDR4-3200 provides 25.6 GB/s peak bandwidth per 64-bit bus for ISP pipelines and CNN inference. The -40C to +105C AAT rating covers enclosed ECUs with limited airflow, and automotive qualification simplifies OEM approval. Placed on a fly-by addressed 64-bit bus, four x8 devices give 8 GByte at full bandwidth; the POD12 interface keeps termination power modest, an important trade-off in always-on, ignition-switched systems where quiescent drain and thermal budget are tightly controlled.
Empfohlen
Telematics and Gateway Modules
Connected telematics boxes and vehicle gateways need dense, reliable memory that survives wide cabin and engine-bay-adjacent temperatures. The MT40A2G8JE-062E AAT:E provides 2 GB per x8 device, sufficient for packet buffering, map caching, and OTA staging, with the -40C to +105C range covering under-dash and near-heat mounting locations. DDR4-3200 timing supports modem and network co-processors without becoming the bottleneck; 16 internal banks (4 groups of 4) sustain mixed read/write traffic from concurrent LTE/5G and CAN traffic. Using the AUT:E or AIT:E footprint-compatible siblings lets one PCB design span industrial and automotive programs without layout changes.
Empfohlen
Industrial Edge Computing
Factory edge controllers, machine-vision nodes, and industrial PCs use 16Gbit DDR4 as main memory for real-time analytics. The MT40A2G8JE-062E AAT:E operates from -40C to +105C, tolerating unconditioned cabinets, and its x8 organization allows flexible 32- or 64-bit bus widths. At DDR4-3200, a 64-bit bus delivers 25.6 GB/s, adequate for vision inference plus protocol handling; on-die adjustable VREFDQ removes an external reference rail, simplifying 4-8 layer stackups. For industrial programs without the +105C requirement, the same board accepts the pin-compatible AIT:E industrial variant, giving sourcing flexibility and cost options within one validated footprint.
Empfohlen
Networking Line Cards
Enterprise switch and router line cards use deep packet buffers, and 16Gbit DDR4 provides cost-effective buffering density. The MT40A2G8JE-062E x8 organization lets buffer managers build 72-bit or wider ECC buses from multiple devices, and DDR4-3200 with bank-group interleaving sustains the short, random access patterns typical of queuing. POD12 termination reduces interface power compared with DDR3 at equivalent data rate, easing airflow-limited chassis design. Although the AAT:E is automotive-qualified, its -40C to +105C range also covers harsh outdoor telecom cabinets; the commercial-grade MT40A2G8JE-062E substitutes in temperature-controlled central offices on the same footprint.
Empfohlen
Medical Imaging and Diagnostics
Ultrasound, digital radiography, and lab analyzers buffer high-rate sensor streams in DRAM before processing. The 16Gbit MT40A2G8JE-062E AAT:E handles multi-second acquisitions at DDR4-3200 bandwidth, and the wide -40C to +105C automotive rating comfortably exceeds clinical ambient requirements, adding derating margin for reliability-focused medical designs. On-die VREFDQ generation and 1.2V POD12 I/O simplify power-supply design in noise-sensitive analog-digital mixed systems. Designers should implement ECC at the controller for diagnostic data integrity and choose the AIT:E variant when cost matters and the temperature profile is controlled, since both share the identical 78-ball FBGA footprint.
Empfohlen
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators require deep acquisition memory with sustained write bandwidth. The MT40A2G8JE-062E AAT:E at DDR4-3200 delivers 25.6 GB/s per 64-bit bank, letting acquisition ASICs stream ADC samples without drops, and 2 GByte per x8 device extends record length cost-effectively. The wide temperature rating and automotive qualification translate into high-reliability components suited to instruments with warm chassis interiors; four to eight devices give 8-16 GByte of capture memory. Its 78-ball FBGA layout matches industry-standard DDR4 routing guidelines, and VREFDQ training is handled automatically by mainstream FPGA and ASIC memory controllers.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MT40A2G8JE-062E AAT:E – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MT40A2G8JE-062E AIT:E | MT40A2G8JE-062E AUT:E | MT40A2G8JE-062E AIT:E (Alliance) |
|---|---|---|---|---|
| Package | 78-FBGA (9 x 11 mm) | 78-FBGA (9 x 11 mm) - same | 78-FBGA (9 x 11 mm) - same | 78-FBGA (9 x 11 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory |
| Density / Organization | 16 Gbit, 2G x 8 | 16 Gbit, 2G x 8 | 16 Gbit, 2G x 8 | 16 Gbit, 2G x 8 |
| Speed Grade | DDR4-3200 (-062E), 19 ns | DDR4-3200 (-062E), 19 ns | DDR4-3200 (-062E), 19 ns | DDR4-3200 (-062E), 19 ns |
| Operating Temperature | -40C to +105C (AAT automotive) | -40C to +95C (industrial) | -40C to +95C (automotive) | -40C to +95C (industrial) |
| Supply Voltage | VDD/VDDQ 1.2V +/- 60 mV; VPP 1.2V | VDD/VDDQ 1.2V; VPP 1.2V | VDD/VDDQ 1.2V; VPP 1.2V | 1.2V |
| Automotive Qualification | Yes | No (industrial) | Yes | No (industrial) |
Wichtigste Unterscheidungsmerkmale
- Extended +105C automotive temperature ceiling (vs. MT40A2G8JE-062E AIT:E)
- Genuine Micron automotive qualification (vs. MT40A2G8JE-062E AIT:E (Alliance Memory))
- Highest 16Gbit density with x8 granularity for ECC buses (vs. MT40A256M16LY-062E)
- On-die adjustable VREFDQ generation (vs. DDR3 predecessors such as MT41K128M16JT-125)
Designhinweise
At DDR4-3200 (1600 MHz), route command/address in fly-by topology terminated to VTT, and length-match each DQ byte to its DQS within +/-5 ps (about 0.8 mm on typical FR-4). Because VREFDQ is generated on-die with internal adjustment, omit the DDR3-style external VREFDQ rail but reserve a clean 1.2V plane for VDD/VDDQ and VPP. For an 8-layer stackup, place a solid ground plane adjacent to the component-side signal layer and keep the DRAM within 60 mm of the controller per Micron's DDR4 layout guides.
Budget two rails: VDD/VDDQ at 1.2V +/- 60 mV and VPP at 1.2V (-125 mV/+250 mV). Estimated power: at 25.6 GB/s bus utilization with POD12 termination, a 64-bit, four-device bus draws roughly 2.5-4 W including termination; verify with Micron's power calculator and your actual bus activity (CBR and write duty). Sequence VPP with or before VDD; dropping VPP below the datasheet minimum can degrade cell retention. Add 10 uF plus 0.1 uF decoupling per supply pin cluster, placed within 2 mm of the balls.
The AAT:E rating of +105C is a case-temperature limit; at DDR4-3200 with sustained activity, self-heating of 10-20C above ambient is typical (estimate; confirm via thermal simulation). Below +85C the standard refresh interval applies, and Micron's datasheet specifies extended refresh operation for higher TC ranges - ensure your controller programs the correct refresh mode for the temperature zone. For fanless enclosures, derate throughput or choose a lower activity profile so junction temperature stays inside the -40C to +105C window.
Do not mix temperature grades casually: the AAT:E (+105C) and AIT:E (+95C) share identical pinout and timing, but substituting an AIT:E into a +100C environment causes out-of-spec operation with no visible symptoms until field failures appear. Also verify controller VREFDQ training support - DDR3 controllers cannot drive DDR4 without major firmware changes. Finally, confirm the -062E speed bin against your controller's supported timing table (CL, tRCD, tRP at DDR4-3200) before finalizing initialization code.
Compliance-Informationen
Automotive-grade (AAT) suffix and Micron automotive qualification per Micron part catalog. Specific RoHS/REACH/AEC-Q100 certificates should be requested from Micron; not stated verbatim in the provided web data.
