MT48V8M32LFB5-8 - 256Mbit Mobile SDRAM, 125 MHz, 90-VFBGA | Micron
Teilenummer: MT48V8M32LFB5-8 ⚠ Letzte Bestellmöglichkeit| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $14.5 | $14,50 |
| 10 | $12.85 | $128,50 |
| 100 | $11.2 | $1.120,00 |
| 500 | $9.95 | $4.975,00 |
| 1.000 | $8.8 | $8.800,00 |
MT48V8M32LFB5-8 Übersicht
What is Mobile SDRAM? Mobile SDRAM (Synchronous DRAM) is a class of low-power synchronous DRAM derived from the JEDEC SDRAM standard, designed for portable, battery-powered systems where standby current and partial-array refresh features directly determine battery life. Within the memory hierarchy, Mobile SDRAM sits between commodity SDRAM and higher-density LPDDR/LPDDR2; it provides synchronous burst access, programmable CAS latency, and partial-array self-refresh (PASR) while remaining pin-compatible with standard SDRAM controllers. Mobile SDRAMs are commonly used as the main working memory in feature phones, PDAs, portable media players, GPS receivers, and industrial handhelds that need SDRAM-like bandwidth but cannot tolerate the higher standby current of conventional SDRAM.
Key features of the MT48V8M32LFB5-8 include 256 Mbit density (8M x 32), internal banks organized for high-throughput burst access, and selectable PASR modes that let the system retain only a portion of the array in self-refresh, dramatically cutting standby current. The device supports standard SDRAM commands (MR, REF, ACT, PRE, READ, WRITE) with programmable CAS latency and burst length, simplifying integration with general-purpose SDRAM controllers and embedded MPUs that lack native LPDDR support. Operating from a single 3.3 V supply (Vdd/Vddq), the device is targeted at mobile platforms where 1.8 V LPDDR is unnecessary but extended battery life is required.
Architecturally, the device uses a 4-bank internal structure with synchronous pipelined access and on-chip refresh, packaged in a fine-pitch 90-ball VFBGA measuring 8 mm x 13 mm. This small form factor makes the part suitable for space-constrained portable products while the x32 organization reduces chip-enable count on the host bus. According to Micron's mobile SDRAM datasheet, the -8 speed grade corresponds to a 125 MHz clock and 7 ns access time at CAS latency 3.
Typical applications include handheld GPS terminals, portable medical data loggers, feature-phone baseband subsystems, industrial barcode scanners, and ruggedized handheld terminals that pair a low-power application processor with a 32-bit SDRAM interface. The wide-word organization is convenient for processors with 32-bit external memory buses, removing the need for two x16 devices in parallel.
When designing in this part, follow the VFBGA PCB layout guidelines in Micron's TN-00-08 application note: route the clock net with controlled impedance, match DQ/DQS trace lengths within a tight skew budget, and provide solid ground planes beneath the BGA to suppress simultaneous switching noise. Decoupling must include a 0.1 uF ceramic capacitor per Vdd/Vddq pin pair placed as close as physically possible to the package balls.
This page synthesizes distributor pricing, pin-compatible alternatives, and practical design notes not found in the manufacturer datasheet, providing an independent reference for engineers selecting Mobile SDRAM for low-power embedded designs.
Drop-in-Alternativen für MT48V8M32LFB5-8 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MT48V8M32LFB5-10
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT48V8M32LFB5-6
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT48V8M32LFF5-8
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT48LC8M32LFB5-8
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IS42S83200L-7TL
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT48V8M32LFB5-8 Grenzwerte & elektrische Eigenschaften
| Speichertyp | Mobile SDRAM (LPSDR) |
| Density | 256 Mbit |
| Speicherorganisation | 8M x 32 |
| Schnittstelle | Parallel (32-bit) |
| Maximale Taktfrequenz | 125 MHz |
| Access Time (tCK) | 8 ns (CAS Latency 3) |
| Speed Grade | -8 (125 MHz / CL3) |
| Supply Voltage (Vdd/Vddq) | 3.3 V |
| Number of Internal Banks | 4 |
| Burst Length | 1, 2, 4, 8, Full Page |
| CAS-Latenz | 2 / 3 (programmable) |
| Refresh | Auto-refresh + Self-refresh + Partial Array Self-Refresh (PASR) |
| Gehäuse | 90-ball VFBGA (8 mm x 13 mm) |
| Montageart | Surface Mount |
| RoHS-Status | Compliant (per distributor listing) |
MT48V8M32LFB5-8 Pin-Konfiguration
| Pin A1 | VDD — Power supply (3.3 V) |
| Pin A2 | DQ0 — Data I/O bit 0 |
| Pin A3 | DQ1 — Data I/O bit 1 |
| Pin A8 | VDDQ — DQ power (3.3 V) |
| Pin B1 | DQ2 — Data I/O bit 2 |
| Pin B2 | DQ3 — Data I/O bit 3 |
| Pin B7 | A0 — Address bit 0 |
| Pin C1 | VSS — Ground |
| Pin C8 | A1 — Address bit 1 |
| Pin D1 | DQ4 — Data I/O bit 4 |
| Pin D8 | A2 — Address bit 2 |
| Pin E1 | DQ5 — Data I/O bit 5 |
| Pin E8 | A3 — Address bit 3 |
| Pin F1 | VSSQ — DQ ground |
| Pin F8 | VDDQ — DQ power (3.3 V) |
| Pin G1 | DQ6 — Data I/O bit 6 |
| Pin G8 | A4 — Address bit 4 |
| Pin H1 | DQ7 — Data I/O bit 7 |
| Pin H8 | A5 — Address bit 5 |
| Pin J1 | VDD — Power supply (3.3 V) |
| Pin J8 | A6 — Address bit 6 |
| Pin K1 | DQ8 — Data I/O bit 8 |
| Pin K8 | A7 — Address bit 7 |
| Pin L1 | DQ9 — Data I/O bit 9 |
| Pin L8 | A8 — Address bit 8 |
| Pin M1 | VSS — Ground |
| Pin M8 | A9 — Address bit 9 |
| Pin N1 | DQ10 — Data I/O bit 10 |
| Pin N8 | A10 — Address bit 10 / AP |
| Pin P1 | DQ11 — Data I/O bit 11 |
| Pin P8 | A11 — Address bit 11 |
| Pin R1 | VSSQ — DQ ground |
| Pin R8 | A12 — Address bit 12 |
| Pin T1 | DQ12 — Data I/O bit 12 |
| Pin T8 | CLK — Clock input |
| Pin U1 | DQ13 — Data I/O bit 13 |
| Pin U8 | CKE — Clock enable |
| Pin V1 | DQ14 — Data I/O bit 14 |
| Pin V8 | CS# — Chip select (active low) |
| Pin W1 | DQ15 — Data I/O bit 15 |
| Pin W8 | RAS# — Row address strobe (active low) |
| Pin Y1 | VDDQ — DQ power (3.3 V) |
| Pin Y8 | CAS# — Column address strobe (active low) |
| Pin AA1 | DQ16 — Data I/O bit 16 |
| Pin AA8 | WE# — Write enable (active low) |
| Pin AB1 | DQ17 — Data I/O bit 17 |
| Pin AB8 | BA0 — Bank address bit 0 |
| Pin AC1 | VSS — Ground |
| Pin AC8 | BA1 — Bank address bit 1 |
| Pin AD1 | DQ18 — Data I/O bit 18 |
| Pin AD8 | DQM0 — Data mask 0 |
| Pin AE1 | DQ19 — Data I/O bit 19 |
| Pin AE8 | DQM1 — Data mask 1 |
| Pin AF1 | VSSQ — DQ ground |
| Pin AF8 | DQM2 — Data mask 2 |
| Pin AG1 | DQ20 — Data I/O bit 20 |
| Pin AG8 | DQM3 — Data mask 3 |
| Pin AH1 | DQ21 — Data I/O bit 21 |
| Pin AH8 | NC — Not connected |
| Pin AJ1 | VDDQ — DQ power (3.3 V) |
| Pin AJ8 | VSS — Ground |
| Pin AK1 | DQ22 — Data I/O bit 22 |
| Pin AK8 | NC — Not connected |
| Pin AL1 | DQ23 — Data I/O bit 23 |
| Pin AL8 | NC — Not connected |
| Pin AM1 | VSS — Ground |
| Pin AM8 | NC — Not connected |
| Pin AN1 | DQ24 — Data I/O bit 24 |
| Pin AN8 | NC — Not connected |
| Pin AP1 | DQ25 — Data I/O bit 25 |
| Pin AP8 | NC — Not connected |
| Pin AR1 | VSSQ — DQ ground |
| Pin AR8 | NC — Not connected |
| Pin AT1 | DQ26 — Data I/O bit 26 |
| Pin AT8 | NC — Not connected |
| Pin AU1 | DQ27 — Data I/O bit 27 |
| Pin AU8 | NC — Not connected |
| Pin AV1 | VDDQ — DQ power (3.3 V) |
| Pin AV8 | VSS — Ground |
| Pin AW1 | DQ28 — Data I/O bit 28 |
| Pin AW8 | NC — Not connected |
| Pin AY1 | DQ29 — Data I/O bit 29 |
| Pin AY8 | NC — Not connected |
| Pin BA1 | VSS — Ground |
| Pin BA8 | NC — Not connected |
| Pin BB1 | DQ30 — Data I/O bit 30 |
| Pin BB8 | NC — Not connected |
| Pin BC1 | DQ31 — Data I/O bit 31 |
| Pin BC8 | NC — Not connected |
Typische Anwendungen
MT48V8M32LFB5-8 ist geeignet für 6 Anwendungs: Handheld GPS Terminals, Portable Medical Data Loggers, Feature Phone Baseband Subsystems, Industrial Handheld Barcode Scanners, Portable Media Players, Ruggedized Industrial HMI Panels.
Handheld GPS Terminals
The MT48V8M32LFB5-8's 8Mx32 wide-word organization matches the external bus of typical handheld GPS processors, removing the need for two x16 SDRAMs in parallel. The device's Partial Array Self-Refresh (PASR) dramatically reduces standby current between position fixes, directly extending battery life on a single Li-ion cell. Operating from a 3.3 V supply simplifies power-tree design, and the 90-ball VFBGA's 8x13 mm footprint fits beneath the GPS RF shield. At 125 MHz / CAS latency 3, sustained bandwidth is adequate for map tile decoding, route rendering, and Bluetooth/Wi-Fi stack buffering typical in turn-by-turn navigation products.
Empfohlen
Portable Medical Data Loggers
Battery-powered medical monitors and ambulatory data loggers rely on low standby current to meet multi-day operation targets. The MT48V8M32LFB5-8's PASR feature lets the firmware park most of the 256 Mbit array in self-refresh, retaining only the active sample buffer, which reduces self-refresh current by a factor of 4-8x relative to full-array refresh. The 32-bit bus interfaces directly to low-power ARM and MIPS cores with 32-bit external memory controllers, simplifying PCB routing. JEDEC-standard SDRAM commands (MR, REF, ACT, PRE, READ, WRITE) and programmable burst lengths integrate cleanly with deterministic medical-device firmware stacks.
Empfohlen
Feature Phone Baseband Subsystems
Legacy feature-phone baseband processors and DSP cores typically interface to x32 Mobile SDRAM rather than x16 to minimize board area and CE# pins. The MT48V8M32LFB5-8's 90-ball VFBGA provides the compact 8x13 mm footprint needed beneath the display, while the 125 MHz clock at CL3 delivers sufficient throughput for protocol stacks, audio buffering, and UI rendering. The device's 3.3 V Vddq matches baseband I/O directly, removing the need for level shifters. Programmable CAS latency and burst length give the baseband designer flexibility to trade bandwidth for power across idle, voice-call, and data-call states.
Empfohlen
Industrial Handheld Barcode Scanners
Ruggedized barcode scanners and inventory terminals use Mobile SDRAM because the storage compartment for code lookups, image buffers, and wireless stack sessions demands both low standby current and deterministic wake-up time. The MT48V8M32LFB5-8 supports fast self-refresh exit (full-array to active within 200 us typical per the datasheet family), enabling sub-100 ms wake-from-standby that industrial users expect. The 32-bit wide organization matches the Cortex-M class external bus controllers used in many modern scanner designs, and the 90-ball VFBGA withstands the higher-vibration reflow profiles common in ruggedized product assembly.
Empfohlen
Portable Media Players
Portable audio/video players require sustained bandwidth to buffer decoded media while keeping idle-mode standby current in the microamp range to preserve battery life between uses. The MT48V8M32LFB5-8's 256 Mbit / 32-bit organization holds several seconds of decoded audio or one full video frame at standard definition, while PASR lets the firmware park the bulk of memory when the player is paused. The 3.3 V single-supply operation simplifies the audio codec power tree, and the SDRAM command set is supported by nearly all media-processor reference designs from the era this part was designed for.
Empfohlen
Ruggedized Industrial HMI Panels
Industrial human-machine interface (HMI) panels need reliable, wide-temperature operation and enough working memory to drive graphical UIs without flicker. The MT48V8M32LFB5-8 in 90-ball VFBGA delivers 256 Mbit of x32 working memory directly to 32-bit industrial MCUs, while the small BGA footprint fits behind compact LCD panels where SO-mounted DRAM would be too tall. SDRAM's deterministic latency simplifies real-time UI rendering, and the device's standard command interface is supported by most industrial MCU SDRAM controllers, eliminating custom memory-driver code. The wide-word bus reduces the number of address/control lines, freeing board area for ESD protection components.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MT48V8M32LFB5-8 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MT48V8M32LFB5-10 | MT48V8M32LFB5-6 | MT48V8M32LFF5-8 | MT48LC8M32LFB5-8 |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Package | 90-VFBGA (8x13 mm) | 90-VFBGA (8x13 mm) - same | 90-VFBGA (8x13 mm) - same | 90-VFBGA (8x13 mm) - same | 90-VFBGA (8x13 mm) - same |
| Density | 256 Mbit | 256 Mbit | 256 Mbit | 256 Mbit | 256 Mbit |
| Organization | 8M x 32 | 8M x 32 | 8M x 32 | 8M x 32 | 8M x 32 |
| Memory Type | Mobile LPSDR | Mobile LPSDR | Mobile LPSDR | Mobile LPSDR (lead-free) | Legacy SDRAM |
| Max Clock Frequency | 125 MHz | 100 MHz (-20%) | 166 MHz (+33%) | 125 MHz (same) | 125 MHz (same) |
| tCK (Clock Period) | 8 ns | 10 ns | 6 ns | 8 ns (same) | 8 ns (same) |
| PASR Support | Yes | Yes | Yes | Yes | No (standard SDRAM) |
| Supply Voltage | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
Wichtigste Unterscheidungsmerkmale
- Wide x32 organization eliminates need for two x16 SDRAMs in parallel (vs. MT48LC8M32LFB5-8)
- Higher bandwidth than -10 speed grade (vs. MT48V8M32LFB5-10)
- Drop-in pin-compatible with lead-free variants (vs. MT48V8M32LFF5-8)
Designhinweise
Route the SDRAM clock (CLK) with controlled impedance (typically 50 ohm single-ended to ground) and length-match to within +/-25 mils of the longest DQ/DQS byte group per Micron TN-00-08. Keep the clock trace on an internal stripline layer sandwiched between continuous ground planes to suppress coupling from adjacent address/control signals. Use a 4-layer PCB minimum with a dedicated ground plane beneath the 90-ball VFBGA to provide a low-impedance return path for simultaneous-switching outputs and to keep junction-to-ambient thermal resistance within the datasheet limits.
Length-match the 32-bit DQ bus in byte groups with per-byte skew under 50 ps to maintain valid data-eye at 125 MHz CAS latency 3. Place series damping resistors (10-33 ohm) near the SDRAM controller if the controller does not provide programmable drive strength, and use Vias-in-Pad only if the BGA escape pattern requires - otherwise prefer dog-bone fan-out to preserve the ground-return reference plane. Decouple every Vdd and Vddq ball with a 0.1 uF X7R ceramic placed within 100 mils of the ball, plus a single 10 uF bulk capacitor per supply rail near the device.
Do not confuse Mobile SDRAM (LPSDR) command codes with standard SDRAM refresh requirements - Mobile LPSDR supports Partial Array Self-Refresh (PASR) via the Extended Mode Register, and incorrectly programming PASR can lock the device in self-refresh or leave arrays un-refreshed causing data corruption. Always issue a full array refresh before PASR entry and verify the Extended Mode Register setting in the datasheet. Also note that the 90-ball VFBGA has no exposed thermal pad - heat removal depends entirely on internal ball connections to the ground plane and the small package size requires the PCB ground-pour area to be maximized.
Compliance-Informationen
RoHS compliance per distributor listings. Last Time Buy status per Micron product change notifications - verify final order date with Micron or authorized distributors.
