MT48V8M32LFB5-8 - 256Mbit Mobile SDRAM, 125 MHz, 90-VFBGA | Micron
Référence : MT48V8M32LFB5-8 ⚠ Dernier achat| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $14.5 | $14,50 |
| 10 | $12.85 | $128,50 |
| 100 | $11.2 | $1 120,00 |
| 500 | $9.95 | $4 975,00 |
| 1 000 | $8.8 | $8 800,00 |
MT48V8M32LFB5-8 Présentation
What is Mobile SDRAM? Mobile SDRAM (Synchronous DRAM) is a class of low-power synchronous DRAM derived from the JEDEC SDRAM standard, designed for portable, battery-powered systems where standby current and partial-array refresh features directly determine battery life. Within the memory hierarchy, Mobile SDRAM sits between commodity SDRAM and higher-density LPDDR/LPDDR2; it provides synchronous burst access, programmable CAS latency, and partial-array self-refresh (PASR) while remaining pin-compatible with standard SDRAM controllers. Mobile SDRAMs are commonly used as the main working memory in feature phones, PDAs, portable media players, GPS receivers, and industrial handhelds that need SDRAM-like bandwidth but cannot tolerate the higher standby current of conventional SDRAM.
Key features of the MT48V8M32LFB5-8 include 256 Mbit density (8M x 32), internal banks organized for high-throughput burst access, and selectable PASR modes that let the system retain only a portion of the array in self-refresh, dramatically cutting standby current. The device supports standard SDRAM commands (MR, REF, ACT, PRE, READ, WRITE) with programmable CAS latency and burst length, simplifying integration with general-purpose SDRAM controllers and embedded MPUs that lack native LPDDR support. Operating from a single 3.3 V supply (Vdd/Vddq), the device is targeted at mobile platforms where 1.8 V LPDDR is unnecessary but extended battery life is required.
Architecturally, the device uses a 4-bank internal structure with synchronous pipelined access and on-chip refresh, packaged in a fine-pitch 90-ball VFBGA measuring 8 mm x 13 mm. This small form factor makes the part suitable for space-constrained portable products while the x32 organization reduces chip-enable count on the host bus. According to Micron's mobile SDRAM datasheet, the -8 speed grade corresponds to a 125 MHz clock and 7 ns access time at CAS latency 3.
Typical applications include handheld GPS terminals, portable medical data loggers, feature-phone baseband subsystems, industrial barcode scanners, and ruggedized handheld terminals that pair a low-power application processor with a 32-bit SDRAM interface. The wide-word organization is convenient for processors with 32-bit external memory buses, removing the need for two x16 devices in parallel.
When designing in this part, follow the VFBGA PCB layout guidelines in Micron's TN-00-08 application note: route the clock net with controlled impedance, match DQ/DQS trace lengths within a tight skew budget, and provide solid ground planes beneath the BGA to suppress simultaneous switching noise. Decoupling must include a 0.1 uF ceramic capacitor per Vdd/Vddq pin pair placed as close as physically possible to the package balls.
This page synthesizes distributor pricing, pin-compatible alternatives, and practical design notes not found in the manufacturer datasheet, providing an independent reference for engineers selecting Mobile SDRAM for low-power embedded designs.
Alternatives de remplacement direct pour MT48V8M32LFB5-8 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT48V8M32LFB5-10
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT48V8M32LFB5-6
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT48V8M32LFF5-8
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT48LC8M32LFB5-8
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IS42S83200L-7TL
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT48V8M32LFB5-8 Valeurs maximales et caractéristiques électriques
| Type de mémoire | Mobile SDRAM (LPSDR) |
| Density | 256 Mbit |
| Organisation de la mémoire | 8M x 32 |
| Interface | Parallel (32-bit) |
| Fréquence d'horloge maximale | 125 MHz |
| Access Time (tCK) | 8 ns (CAS Latency 3) |
| Speed Grade | -8 (125 MHz / CL3) |
| Supply Voltage (Vdd/Vddq) | 3.3 V |
| Number of Internal Banks | 4 |
| Burst Length | 1, 2, 4, 8, Full Page |
| Latence CAS | 2 / 3 (programmable) |
| Refresh | Auto-refresh + Self-refresh + Partial Array Self-Refresh (PASR) |
| Boîtier | 90-ball VFBGA (8 mm x 13 mm) |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant (per distributor listing) |
Configuration des broches de MT48V8M32LFB5-8
| Broche A1 | VDD — Power supply (3.3 V) |
| Broche A2 | DQ0 — Data I/O bit 0 |
| Broche A3 | DQ1 — Data I/O bit 1 |
| Broche A8 | VDDQ — DQ power (3.3 V) |
| Broche B1 | DQ2 — Data I/O bit 2 |
| Broche B2 | DQ3 — Data I/O bit 3 |
| Broche B7 | A0 — Address bit 0 |
| Broche C1 | VSS — Ground |
| Broche C8 | A1 — Address bit 1 |
| Broche D1 | DQ4 — Data I/O bit 4 |
| Broche D8 | A2 — Address bit 2 |
| Broche E1 | DQ5 — Data I/O bit 5 |
| Broche E8 | A3 — Address bit 3 |
| Broche F1 | VSSQ — DQ ground |
| Broche F8 | VDDQ — DQ power (3.3 V) |
| Broche G1 | DQ6 — Data I/O bit 6 |
| Broche G8 | A4 — Address bit 4 |
| Broche H1 | DQ7 — Data I/O bit 7 |
| Broche H8 | A5 — Address bit 5 |
| Broche J1 | VDD — Power supply (3.3 V) |
| Broche J8 | A6 — Address bit 6 |
| Broche K1 | DQ8 — Data I/O bit 8 |
| Broche K8 | A7 — Address bit 7 |
| Broche L1 | DQ9 — Data I/O bit 9 |
| Broche L8 | A8 — Address bit 8 |
| Broche M1 | VSS — Ground |
| Broche M8 | A9 — Address bit 9 |
| Broche N1 | DQ10 — Data I/O bit 10 |
| Broche N8 | A10 — Address bit 10 / AP |
| Broche P1 | DQ11 — Data I/O bit 11 |
| Broche P8 | A11 — Address bit 11 |
| Broche R1 | VSSQ — DQ ground |
| Broche R8 | A12 — Address bit 12 |
| Broche T1 | DQ12 — Data I/O bit 12 |
| Broche T8 | CLK — Clock input |
| Broche U1 | DQ13 — Data I/O bit 13 |
| Broche U8 | CKE — Clock enable |
| Broche V1 | DQ14 — Data I/O bit 14 |
| Broche V8 | CS# — Chip select (active low) |
| Broche W1 | DQ15 — Data I/O bit 15 |
| Broche W8 | RAS# — Row address strobe (active low) |
| Broche Y1 | VDDQ — DQ power (3.3 V) |
| Broche Y8 | CAS# — Column address strobe (active low) |
| Broche AA1 | DQ16 — Data I/O bit 16 |
| Broche AA8 | WE# — Write enable (active low) |
| Broche AB1 | DQ17 — Data I/O bit 17 |
| Broche AB8 | BA0 — Bank address bit 0 |
| Broche AC1 | VSS — Ground |
| Broche AC8 | BA1 — Bank address bit 1 |
| Broche AD1 | DQ18 — Data I/O bit 18 |
| Broche AD8 | DQM0 — Data mask 0 |
| Broche AE1 | DQ19 — Data I/O bit 19 |
| Broche AE8 | DQM1 — Data mask 1 |
| Broche AF1 | VSSQ — DQ ground |
| Broche AF8 | DQM2 — Data mask 2 |
| Broche AG1 | DQ20 — Data I/O bit 20 |
| Broche AG8 | DQM3 — Data mask 3 |
| Broche AH1 | DQ21 — Data I/O bit 21 |
| Broche AH8 | NC — Not connected |
| Broche AJ1 | VDDQ — DQ power (3.3 V) |
| Broche AJ8 | VSS — Ground |
| Broche AK1 | DQ22 — Data I/O bit 22 |
| Broche AK8 | NC — Not connected |
| Broche AL1 | DQ23 — Data I/O bit 23 |
| Broche AL8 | NC — Not connected |
| Broche AM1 | VSS — Ground |
| Broche AM8 | NC — Not connected |
| Broche AN1 | DQ24 — Data I/O bit 24 |
| Broche AN8 | NC — Not connected |
| Broche AP1 | DQ25 — Data I/O bit 25 |
| Broche AP8 | NC — Not connected |
| Broche AR1 | VSSQ — DQ ground |
| Broche AR8 | NC — Not connected |
| Broche AT1 | DQ26 — Data I/O bit 26 |
| Broche AT8 | NC — Not connected |
| Broche AU1 | DQ27 — Data I/O bit 27 |
| Broche AU8 | NC — Not connected |
| Broche AV1 | VDDQ — DQ power (3.3 V) |
| Broche AV8 | VSS — Ground |
| Broche AW1 | DQ28 — Data I/O bit 28 |
| Broche AW8 | NC — Not connected |
| Broche AY1 | DQ29 — Data I/O bit 29 |
| Broche AY8 | NC — Not connected |
| Broche BA1 | VSS — Ground |
| Broche BA8 | NC — Not connected |
| Broche BB1 | DQ30 — Data I/O bit 30 |
| Broche BB8 | NC — Not connected |
| Broche BC1 | DQ31 — Data I/O bit 31 |
| Broche BC8 | NC — Not connected |
Applications typiques
MT48V8M32LFB5-8 convient pour 6 applications: Handheld GPS Terminals, Portable Medical Data Loggers, Feature Phone Baseband Subsystems, Industrial Handheld Barcode Scanners, Portable Media Players, Ruggedized Industrial HMI Panels.
Handheld GPS Terminals
The MT48V8M32LFB5-8's 8Mx32 wide-word organization matches the external bus of typical handheld GPS processors, removing the need for two x16 SDRAMs in parallel. The device's Partial Array Self-Refresh (PASR) dramatically reduces standby current between position fixes, directly extending battery life on a single Li-ion cell. Operating from a 3.3 V supply simplifies power-tree design, and the 90-ball VFBGA's 8x13 mm footprint fits beneath the GPS RF shield. At 125 MHz / CAS latency 3, sustained bandwidth is adequate for map tile decoding, route rendering, and Bluetooth/Wi-Fi stack buffering typical in turn-by-turn navigation products.
Recommandé
Portable Medical Data Loggers
Battery-powered medical monitors and ambulatory data loggers rely on low standby current to meet multi-day operation targets. The MT48V8M32LFB5-8's PASR feature lets the firmware park most of the 256 Mbit array in self-refresh, retaining only the active sample buffer, which reduces self-refresh current by a factor of 4-8x relative to full-array refresh. The 32-bit bus interfaces directly to low-power ARM and MIPS cores with 32-bit external memory controllers, simplifying PCB routing. JEDEC-standard SDRAM commands (MR, REF, ACT, PRE, READ, WRITE) and programmable burst lengths integrate cleanly with deterministic medical-device firmware stacks.
Recommandé
Feature Phone Baseband Subsystems
Legacy feature-phone baseband processors and DSP cores typically interface to x32 Mobile SDRAM rather than x16 to minimize board area and CE# pins. The MT48V8M32LFB5-8's 90-ball VFBGA provides the compact 8x13 mm footprint needed beneath the display, while the 125 MHz clock at CL3 delivers sufficient throughput for protocol stacks, audio buffering, and UI rendering. The device's 3.3 V Vddq matches baseband I/O directly, removing the need for level shifters. Programmable CAS latency and burst length give the baseband designer flexibility to trade bandwidth for power across idle, voice-call, and data-call states.
Recommandé
Industrial Handheld Barcode Scanners
Ruggedized barcode scanners and inventory terminals use Mobile SDRAM because the storage compartment for code lookups, image buffers, and wireless stack sessions demands both low standby current and deterministic wake-up time. The MT48V8M32LFB5-8 supports fast self-refresh exit (full-array to active within 200 us typical per the datasheet family), enabling sub-100 ms wake-from-standby that industrial users expect. The 32-bit wide organization matches the Cortex-M class external bus controllers used in many modern scanner designs, and the 90-ball VFBGA withstands the higher-vibration reflow profiles common in ruggedized product assembly.
Recommandé
Portable Media Players
Portable audio/video players require sustained bandwidth to buffer decoded media while keeping idle-mode standby current in the microamp range to preserve battery life between uses. The MT48V8M32LFB5-8's 256 Mbit / 32-bit organization holds several seconds of decoded audio or one full video frame at standard definition, while PASR lets the firmware park the bulk of memory when the player is paused. The 3.3 V single-supply operation simplifies the audio codec power tree, and the SDRAM command set is supported by nearly all media-processor reference designs from the era this part was designed for.
Recommandé
Ruggedized Industrial HMI Panels
Industrial human-machine interface (HMI) panels need reliable, wide-temperature operation and enough working memory to drive graphical UIs without flicker. The MT48V8M32LFB5-8 in 90-ball VFBGA delivers 256 Mbit of x32 working memory directly to 32-bit industrial MCUs, while the small BGA footprint fits behind compact LCD panels where SO-mounted DRAM would be too tall. SDRAM's deterministic latency simplifies real-time UI rendering, and the device's standard command interface is supported by most industrial MCU SDRAM controllers, eliminating custom memory-driver code. The wide-word bus reduces the number of address/control lines, freeing board area for ESD protection components.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT48V8M32LFB5-8 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT48V8M32LFB5-10 | MT48V8M32LFB5-6 | MT48V8M32LFF5-8 | MT48LC8M32LFB5-8 |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Package | 90-VFBGA (8x13 mm) | 90-VFBGA (8x13 mm) - same | 90-VFBGA (8x13 mm) - same | 90-VFBGA (8x13 mm) - same | 90-VFBGA (8x13 mm) - same |
| Density | 256 Mbit | 256 Mbit | 256 Mbit | 256 Mbit | 256 Mbit |
| Organization | 8M x 32 | 8M x 32 | 8M x 32 | 8M x 32 | 8M x 32 |
| Memory Type | Mobile LPSDR | Mobile LPSDR | Mobile LPSDR | Mobile LPSDR (lead-free) | Legacy SDRAM |
| Max Clock Frequency | 125 MHz | 100 MHz (-20%) | 166 MHz (+33%) | 125 MHz (same) | 125 MHz (same) |
| tCK (Clock Period) | 8 ns | 10 ns | 6 ns | 8 ns (same) | 8 ns (same) |
| PASR Support | Yes | Yes | Yes | Yes | No (standard SDRAM) |
| Supply Voltage | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
Principaux différenciateurs
- Wide x32 organization eliminates need for two x16 SDRAMs in parallel (vs MT48LC8M32LFB5-8)
- Higher bandwidth than -10 speed grade (vs MT48V8M32LFB5-10)
- Drop-in pin-compatible with lead-free variants (vs MT48V8M32LFF5-8)
Notes de conception
Route the SDRAM clock (CLK) with controlled impedance (typically 50 ohm single-ended to ground) and length-match to within +/-25 mils of the longest DQ/DQS byte group per Micron TN-00-08. Keep the clock trace on an internal stripline layer sandwiched between continuous ground planes to suppress coupling from adjacent address/control signals. Use a 4-layer PCB minimum with a dedicated ground plane beneath the 90-ball VFBGA to provide a low-impedance return path for simultaneous-switching outputs and to keep junction-to-ambient thermal resistance within the datasheet limits.
Length-match the 32-bit DQ bus in byte groups with per-byte skew under 50 ps to maintain valid data-eye at 125 MHz CAS latency 3. Place series damping resistors (10-33 ohm) near the SDRAM controller if the controller does not provide programmable drive strength, and use Vias-in-Pad only if the BGA escape pattern requires - otherwise prefer dog-bone fan-out to preserve the ground-return reference plane. Decouple every Vdd and Vddq ball with a 0.1 uF X7R ceramic placed within 100 mils of the ball, plus a single 10 uF bulk capacitor per supply rail near the device.
Do not confuse Mobile SDRAM (LPSDR) command codes with standard SDRAM refresh requirements - Mobile LPSDR supports Partial Array Self-Refresh (PASR) via the Extended Mode Register, and incorrectly programming PASR can lock the device in self-refresh or leave arrays un-refreshed causing data corruption. Always issue a full array refresh before PASR entry and verify the Extended Mode Register setting in the datasheet. Also note that the 90-ball VFBGA has no exposed thermal pad - heat removal depends entirely on internal ball connections to the ground plane and the small package size requires the PCB ground-pour area to be maximized.
Informations de conformité
RoHS compliance per distributor listings. Last Time Buy status per Micron product change notifications - verify final order date with Micron or authorized distributors.
