MT48V8M32LFB5-8 - 256Mbit Mobile SDRAM, 125 MHz, 90-VFBGA | Micron
N.º da peça: MT48V8M32LFB5-8 ⚠ Última compra| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $14.5 | $14,50 |
| 10 | $12.85 | $128,50 |
| 100 | $11.2 | $1.120,00 |
| 500 | $9.95 | $4.975,00 |
| 1.000 | $8.8 | $8.800,00 |
MT48V8M32LFB5-8 Visão geral
What is Mobile SDRAM? Mobile SDRAM (Synchronous DRAM) is a class of low-power synchronous DRAM derived from the JEDEC SDRAM standard, designed for portable, battery-powered systems where standby current and partial-array refresh features directly determine battery life. Within the memory hierarchy, Mobile SDRAM sits between commodity SDRAM and higher-density LPDDR/LPDDR2; it provides synchronous burst access, programmable CAS latency, and partial-array self-refresh (PASR) while remaining pin-compatible with standard SDRAM controllers. Mobile SDRAMs are commonly used as the main working memory in feature phones, PDAs, portable media players, GPS receivers, and industrial handhelds that need SDRAM-like bandwidth but cannot tolerate the higher standby current of conventional SDRAM.
Key features of the MT48V8M32LFB5-8 include 256 Mbit density (8M x 32), internal banks organized for high-throughput burst access, and selectable PASR modes that let the system retain only a portion of the array in self-refresh, dramatically cutting standby current. The device supports standard SDRAM commands (MR, REF, ACT, PRE, READ, WRITE) with programmable CAS latency and burst length, simplifying integration with general-purpose SDRAM controllers and embedded MPUs that lack native LPDDR support. Operating from a single 3.3 V supply (Vdd/Vddq), the device is targeted at mobile platforms where 1.8 V LPDDR is unnecessary but extended battery life is required.
Architecturally, the device uses a 4-bank internal structure with synchronous pipelined access and on-chip refresh, packaged in a fine-pitch 90-ball VFBGA measuring 8 mm x 13 mm. This small form factor makes the part suitable for space-constrained portable products while the x32 organization reduces chip-enable count on the host bus. According to Micron's mobile SDRAM datasheet, the -8 speed grade corresponds to a 125 MHz clock and 7 ns access time at CAS latency 3.
Typical applications include handheld GPS terminals, portable medical data loggers, feature-phone baseband subsystems, industrial barcode scanners, and ruggedized handheld terminals that pair a low-power application processor with a 32-bit SDRAM interface. The wide-word organization is convenient for processors with 32-bit external memory buses, removing the need for two x16 devices in parallel.
When designing in this part, follow the VFBGA PCB layout guidelines in Micron's TN-00-08 application note: route the clock net with controlled impedance, match DQ/DQS trace lengths within a tight skew budget, and provide solid ground planes beneath the BGA to suppress simultaneous switching noise. Decoupling must include a 0.1 uF ceramic capacitor per Vdd/Vddq pin pair placed as close as physically possible to the package balls.
This page synthesizes distributor pricing, pin-compatible alternatives, and practical design notes not found in the manufacturer datasheet, providing an independent reference for engineers selecting Mobile SDRAM for low-power embedded designs.
Alternativas drop-in para MT48V8M32LFB5-8 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MT48V8M32LFB5-10
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT48V8M32LFB5-6
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT48V8M32LFF5-8
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT48LC8M32LFB5-8
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IS42S83200L-7TL
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT48V8M32LFB5-8 Classificações máximas e características elétricas
| Tipo de memória | Mobile SDRAM (LPSDR) |
| Density | 256 Mbit |
| Organização da memória | 8M x 32 |
| Interface | Parallel (32-bit) |
| Frequência máxima de clock | 125 MHz |
| Access Time (tCK) | 8 ns (CAS Latency 3) |
| Speed Grade | -8 (125 MHz / CL3) |
| Supply Voltage (Vdd/Vddq) | 3.3 V |
| Number of Internal Banks | 4 |
| Burst Length | 1, 2, 4, 8, Full Page |
| Latência CAS | 2 / 3 (programmable) |
| Refresh | Auto-refresh + Self-refresh + Partial Array Self-Refresh (PASR) |
| Encapsulamento | 90-ball VFBGA (8 mm x 13 mm) |
| Tipo de montagem | Surface Mount |
| Status RoHS | Compliant (per distributor listing) |
Configuração de pinos do MT48V8M32LFB5-8
| Pino A1 | VDD — Power supply (3.3 V) |
| Pino A2 | DQ0 — Data I/O bit 0 |
| Pino A3 | DQ1 — Data I/O bit 1 |
| Pino A8 | VDDQ — DQ power (3.3 V) |
| Pino B1 | DQ2 — Data I/O bit 2 |
| Pino B2 | DQ3 — Data I/O bit 3 |
| Pino B7 | A0 — Address bit 0 |
| Pino C1 | VSS — Ground |
| Pino C8 | A1 — Address bit 1 |
| Pino D1 | DQ4 — Data I/O bit 4 |
| Pino D8 | A2 — Address bit 2 |
| Pino E1 | DQ5 — Data I/O bit 5 |
| Pino E8 | A3 — Address bit 3 |
| Pino F1 | VSSQ — DQ ground |
| Pino F8 | VDDQ — DQ power (3.3 V) |
| Pino G1 | DQ6 — Data I/O bit 6 |
| Pino G8 | A4 — Address bit 4 |
| Pino H1 | DQ7 — Data I/O bit 7 |
| Pino H8 | A5 — Address bit 5 |
| Pino J1 | VDD — Power supply (3.3 V) |
| Pino J8 | A6 — Address bit 6 |
| Pino K1 | DQ8 — Data I/O bit 8 |
| Pino K8 | A7 — Address bit 7 |
| Pino L1 | DQ9 — Data I/O bit 9 |
| Pino L8 | A8 — Address bit 8 |
| Pino M1 | VSS — Ground |
| Pino M8 | A9 — Address bit 9 |
| Pino N1 | DQ10 — Data I/O bit 10 |
| Pino N8 | A10 — Address bit 10 / AP |
| Pino P1 | DQ11 — Data I/O bit 11 |
| Pino P8 | A11 — Address bit 11 |
| Pino R1 | VSSQ — DQ ground |
| Pino R8 | A12 — Address bit 12 |
| Pino T1 | DQ12 — Data I/O bit 12 |
| Pino T8 | CLK — Clock input |
| Pino U1 | DQ13 — Data I/O bit 13 |
| Pino U8 | CKE — Clock enable |
| Pino V1 | DQ14 — Data I/O bit 14 |
| Pino V8 | CS# — Chip select (active low) |
| Pino W1 | DQ15 — Data I/O bit 15 |
| Pino W8 | RAS# — Row address strobe (active low) |
| Pino Y1 | VDDQ — DQ power (3.3 V) |
| Pino Y8 | CAS# — Column address strobe (active low) |
| Pino AA1 | DQ16 — Data I/O bit 16 |
| Pino AA8 | WE# — Write enable (active low) |
| Pino AB1 | DQ17 — Data I/O bit 17 |
| Pino AB8 | BA0 — Bank address bit 0 |
| Pino AC1 | VSS — Ground |
| Pino AC8 | BA1 — Bank address bit 1 |
| Pino AD1 | DQ18 — Data I/O bit 18 |
| Pino AD8 | DQM0 — Data mask 0 |
| Pino AE1 | DQ19 — Data I/O bit 19 |
| Pino AE8 | DQM1 — Data mask 1 |
| Pino AF1 | VSSQ — DQ ground |
| Pino AF8 | DQM2 — Data mask 2 |
| Pino AG1 | DQ20 — Data I/O bit 20 |
| Pino AG8 | DQM3 — Data mask 3 |
| Pino AH1 | DQ21 — Data I/O bit 21 |
| Pino AH8 | NC — Not connected |
| Pino AJ1 | VDDQ — DQ power (3.3 V) |
| Pino AJ8 | VSS — Ground |
| Pino AK1 | DQ22 — Data I/O bit 22 |
| Pino AK8 | NC — Not connected |
| Pino AL1 | DQ23 — Data I/O bit 23 |
| Pino AL8 | NC — Not connected |
| Pino AM1 | VSS — Ground |
| Pino AM8 | NC — Not connected |
| Pino AN1 | DQ24 — Data I/O bit 24 |
| Pino AN8 | NC — Not connected |
| Pino AP1 | DQ25 — Data I/O bit 25 |
| Pino AP8 | NC — Not connected |
| Pino AR1 | VSSQ — DQ ground |
| Pino AR8 | NC — Not connected |
| Pino AT1 | DQ26 — Data I/O bit 26 |
| Pino AT8 | NC — Not connected |
| Pino AU1 | DQ27 — Data I/O bit 27 |
| Pino AU8 | NC — Not connected |
| Pino AV1 | VDDQ — DQ power (3.3 V) |
| Pino AV8 | VSS — Ground |
| Pino AW1 | DQ28 — Data I/O bit 28 |
| Pino AW8 | NC — Not connected |
| Pino AY1 | DQ29 — Data I/O bit 29 |
| Pino AY8 | NC — Not connected |
| Pino BA1 | VSS — Ground |
| Pino BA8 | NC — Not connected |
| Pino BB1 | DQ30 — Data I/O bit 30 |
| Pino BB8 | NC — Not connected |
| Pino BC1 | DQ31 — Data I/O bit 31 |
| Pino BC8 | NC — Not connected |
Aplicações típicas
MT48V8M32LFB5-8 é adequado para 6 aplicaçãos: Handheld GPS Terminals, Portable Medical Data Loggers, Feature Phone Baseband Subsystems, Industrial Handheld Barcode Scanners, Portable Media Players, Ruggedized Industrial HMI Panels.
Handheld GPS Terminals
The MT48V8M32LFB5-8's 8Mx32 wide-word organization matches the external bus of typical handheld GPS processors, removing the need for two x16 SDRAMs in parallel. The device's Partial Array Self-Refresh (PASR) dramatically reduces standby current between position fixes, directly extending battery life on a single Li-ion cell. Operating from a 3.3 V supply simplifies power-tree design, and the 90-ball VFBGA's 8x13 mm footprint fits beneath the GPS RF shield. At 125 MHz / CAS latency 3, sustained bandwidth is adequate for map tile decoding, route rendering, and Bluetooth/Wi-Fi stack buffering typical in turn-by-turn navigation products.
Recomendado
Portable Medical Data Loggers
Battery-powered medical monitors and ambulatory data loggers rely on low standby current to meet multi-day operation targets. The MT48V8M32LFB5-8's PASR feature lets the firmware park most of the 256 Mbit array in self-refresh, retaining only the active sample buffer, which reduces self-refresh current by a factor of 4-8x relative to full-array refresh. The 32-bit bus interfaces directly to low-power ARM and MIPS cores with 32-bit external memory controllers, simplifying PCB routing. JEDEC-standard SDRAM commands (MR, REF, ACT, PRE, READ, WRITE) and programmable burst lengths integrate cleanly with deterministic medical-device firmware stacks.
Recomendado
Feature Phone Baseband Subsystems
Legacy feature-phone baseband processors and DSP cores typically interface to x32 Mobile SDRAM rather than x16 to minimize board area and CE# pins. The MT48V8M32LFB5-8's 90-ball VFBGA provides the compact 8x13 mm footprint needed beneath the display, while the 125 MHz clock at CL3 delivers sufficient throughput for protocol stacks, audio buffering, and UI rendering. The device's 3.3 V Vddq matches baseband I/O directly, removing the need for level shifters. Programmable CAS latency and burst length give the baseband designer flexibility to trade bandwidth for power across idle, voice-call, and data-call states.
Recomendado
Industrial Handheld Barcode Scanners
Ruggedized barcode scanners and inventory terminals use Mobile SDRAM because the storage compartment for code lookups, image buffers, and wireless stack sessions demands both low standby current and deterministic wake-up time. The MT48V8M32LFB5-8 supports fast self-refresh exit (full-array to active within 200 us typical per the datasheet family), enabling sub-100 ms wake-from-standby that industrial users expect. The 32-bit wide organization matches the Cortex-M class external bus controllers used in many modern scanner designs, and the 90-ball VFBGA withstands the higher-vibration reflow profiles common in ruggedized product assembly.
Recomendado
Portable Media Players
Portable audio/video players require sustained bandwidth to buffer decoded media while keeping idle-mode standby current in the microamp range to preserve battery life between uses. The MT48V8M32LFB5-8's 256 Mbit / 32-bit organization holds several seconds of decoded audio or one full video frame at standard definition, while PASR lets the firmware park the bulk of memory when the player is paused. The 3.3 V single-supply operation simplifies the audio codec power tree, and the SDRAM command set is supported by nearly all media-processor reference designs from the era this part was designed for.
Recomendado
Ruggedized Industrial HMI Panels
Industrial human-machine interface (HMI) panels need reliable, wide-temperature operation and enough working memory to drive graphical UIs without flicker. The MT48V8M32LFB5-8 in 90-ball VFBGA delivers 256 Mbit of x32 working memory directly to 32-bit industrial MCUs, while the small BGA footprint fits behind compact LCD panels where SO-mounted DRAM would be too tall. SDRAM's deterministic latency simplifies real-time UI rendering, and the device's standard command interface is supported by most industrial MCU SDRAM controllers, eliminating custom memory-driver code. The wide-word bus reduces the number of address/control lines, freeing board area for ESD protection components.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MT48V8M32LFB5-8 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MT48V8M32LFB5-10 | MT48V8M32LFB5-6 | MT48V8M32LFF5-8 | MT48LC8M32LFB5-8 |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Package | 90-VFBGA (8x13 mm) | 90-VFBGA (8x13 mm) - same | 90-VFBGA (8x13 mm) - same | 90-VFBGA (8x13 mm) - same | 90-VFBGA (8x13 mm) - same |
| Density | 256 Mbit | 256 Mbit | 256 Mbit | 256 Mbit | 256 Mbit |
| Organization | 8M x 32 | 8M x 32 | 8M x 32 | 8M x 32 | 8M x 32 |
| Memory Type | Mobile LPSDR | Mobile LPSDR | Mobile LPSDR | Mobile LPSDR (lead-free) | Legacy SDRAM |
| Max Clock Frequency | 125 MHz | 100 MHz (-20%) | 166 MHz (+33%) | 125 MHz (same) | 125 MHz (same) |
| tCK (Clock Period) | 8 ns | 10 ns | 6 ns | 8 ns (same) | 8 ns (same) |
| PASR Support | Yes | Yes | Yes | Yes | No (standard SDRAM) |
| Supply Voltage | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
Principais diferenciais
- Wide x32 organization eliminates need for two x16 SDRAMs in parallel (vs MT48LC8M32LFB5-8)
- Higher bandwidth than -10 speed grade (vs MT48V8M32LFB5-10)
- Drop-in pin-compatible with lead-free variants (vs MT48V8M32LFF5-8)
Notas de projeto
Route the SDRAM clock (CLK) with controlled impedance (typically 50 ohm single-ended to ground) and length-match to within +/-25 mils of the longest DQ/DQS byte group per Micron TN-00-08. Keep the clock trace on an internal stripline layer sandwiched between continuous ground planes to suppress coupling from adjacent address/control signals. Use a 4-layer PCB minimum with a dedicated ground plane beneath the 90-ball VFBGA to provide a low-impedance return path for simultaneous-switching outputs and to keep junction-to-ambient thermal resistance within the datasheet limits.
Length-match the 32-bit DQ bus in byte groups with per-byte skew under 50 ps to maintain valid data-eye at 125 MHz CAS latency 3. Place series damping resistors (10-33 ohm) near the SDRAM controller if the controller does not provide programmable drive strength, and use Vias-in-Pad only if the BGA escape pattern requires - otherwise prefer dog-bone fan-out to preserve the ground-return reference plane. Decouple every Vdd and Vddq ball with a 0.1 uF X7R ceramic placed within 100 mils of the ball, plus a single 10 uF bulk capacitor per supply rail near the device.
Do not confuse Mobile SDRAM (LPSDR) command codes with standard SDRAM refresh requirements - Mobile LPSDR supports Partial Array Self-Refresh (PASR) via the Extended Mode Register, and incorrectly programming PASR can lock the device in self-refresh or leave arrays un-refreshed causing data corruption. Always issue a full array refresh before PASR entry and verify the Extended Mode Register setting in the datasheet. Also note that the 90-ball VFBGA has no exposed thermal pad - heat removal depends entirely on internal ball connections to the ground plane and the small package size requires the PCB ground-pour area to be maximized.
Informações de conformidade
RoHS compliance per distributor listings. Last Time Buy status per Micron product change notifications - verify final order date with Micron or authorized distributors.
