Die Speicherpreise ändern sich täglich – die Preise auf der Website können hinter dem Markt zurückbleiben. Bitte senden Sie eine RFQ für das aktuellste Angebot.
Aktuellen Preis anfragen →
Micron Technology

MT53E1G32D2FW-046 AUT:C - 32Gb LPDDR4X SDRAM | Micron Automotive

Teilenummer: MT53E1G32D2FW-046 AUT:C ✗ Abgekündigt
Auf Lager Versand in 1–3 Werktagen
1.1 V Vdss 200-TFBGA (10 x 14.5 mm) Package 2.133 GHz Speed Volatile DRAM (LPDDR4X SDRAM) Memory
Ab $21.5 USD / Stück
MOQ: 1 |
Preis aktualisiert: 2026-10-04
Mengenpreise
Menge Stückpreis Gesamt
1 $38.04 $38,04
10 $33.5 $335,00
100 $28.9 $2.890,00
500 $24.2 $12.100,00
1.000 $21.5 $21.500,00
ℹ️ Alle Preise sind in USD

MT53E1G32D2FW-046 AUT:C Übersicht

The Micron MT53E1G32D2FW-046 AUT:C is a 32 Gbit Mobile LPDDR4X SDRAM memory IC organized as 1G x 32, delivering a parallel data interface at 2.133 GHz clock frequency (3.5 ns access time) in a 200-ball TFBGA (10x14.5 mm) surface-mount package. The device operates from 0.6V/1.1V supplies and is AEC-Q100 qualified for automotive applications, targeting the -40C to +125C automotive grade-2 temperature range.

LPDDR4X SDRAM is a low-power double data rate synchronous DRAM standard defined by JEDEC, optimized for mobile, automotive, and embedded platforms. Within the memory hierarchy, LPDDR4X sits between LPDDR4 and LPDDR5: it lowers the I/O voltage from 1.1V to 0.6V versus LPDDR4 while maintaining the same internal VDD of 1.1V, reducing dynamic power by roughly 20% at equivalent throughput. Micron's Mobile LPDDR4X family is widely deployed in automotive infotainment, ADAS controllers, and telematics modules where high density, low power, and AEC-Q100 qualification converge.

Key features include a 32 Gbit density in a single die, 32-bit data width per channel, a maximum clock of 2.133 GHz (data rate 4266 MT/s), on-die temperature sensor with auto self-refresh, ZQ calibration, write leveling, auto precharge, asynchronous reset, and data mask function. The 200-TFBGA package (10 x 14.5 mm) integrates the full 32 Gbit on a single chip, eliminating the need for multi-chip packaging at this density.

Typical applications include automotive infotainment head units, advanced driver-assistance systems (ADAS) controllers, digital instrument clusters, in-vehicle networking gateways, and ruggedized telematics control units. The wide operating temperature range (automotive grade 2: -40C to +105C with peak support up to +125C) and AEC-Q100 qualification make this part suitable for under-hood and outdoor-mounted automotive modules.

When designing with this LPDDR4X, ensure the host SoC supports LPDDR4X (not just LPDDR4), since the 0.6V VDDQ requirement is not backward compatible. Route the high-speed command/address and DQ lanes as impedance-controlled 80-ohm differential or 40-ohm single-ended traces, with length matching within 25 mils across the byte lane.

Drop-in-Alternativen für MT53E1G32D2FW-046 AUT:C – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.

Varianten dieser Serie

Modelle derselben Serie, die drop-in-kompatibel sind mit MT53E1G32D2FW-046 AUT:C (gleiche Bauform und Footprint) – abweichend in Memory Type, Package.

Micron Technology
Memory Type: SDRAM - Mobile LPDDR4X
Package: 200-TFBGA (10 mm x 14.5 mm)
Vergleichen mit MT53E1G32D2FW-046 AUT:C →

Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:

MT53E1G32D2FW-046 AUT:B

✅ Drop-In
Micron Technology
📦 200-TFBGA (10x14.5 mm)
SDRAM - Mobile LPDDR4X · 32 Gbit (4 GB) · x32 Parallel · 2.133 GHz · 3.5 ns · Parallel · 200-TFBGA (10 mm x 14.5 mm) · -40C to +125C

✓ Auf Lager

$273.51 / Stück

Datenblatt ansehen →

MT53E1G32D2FW-046 AUT:C TR

✅ Drop-In
📦 200-TFBGA (10x14.5 mm)
same die, tape-and-reel packaging variant only - identical electrical specs

📋 Referenzalternative (nicht im Katalog)

MT53E1G32D2FW-046 AAT:C

✅ Drop-In
📦 200-TFBGA (10x14.5 mm)
AAT (automotive grade 1, -40C to +85C) vs AUT (grade 2, -40C to +105C), otherwise pin-identical

📋 Referenzalternative (nicht im Katalog)

MT53E1G32D2FW-046 WT:C

✅ Drop-In
📦 200-TFBGA (10x14.5 mm)
industrial temperature grade (WT, -40C to +85C) vs automotive AUT grade 2, same pinout and electrical specs

📋 Referenzalternative (nicht im Katalog)

MT53E1G32D2FW-046 AAT:B

✅ Drop-In
📦 200-TFBGA (10x14.5 mm)
current-production AAT grade 1 die, identical pinout and electrical specs, -40C to +85C range

📋 Referenzalternative (nicht im Katalog)

MT53E1G32D2FW-046 AUT:C Grenzwerte & elektrische Eigenschaften

Speichertyp Volatile DRAM (LPDDR4X SDRAM)
Speichergröße 32 Gbit (4 GB)
Memory Organization 1G x 32
Schnittstellentyp Parallel
Maximale Taktfrequenz 2.133 GHz
Access Time 3.5 ns
Datenrate 4266 MT/s
Supply Voltage VDD 1.1 V
Supply Voltage VDDQ 0.6 V
Betriebstemperaturbereich -40°C to +125°C (AEC-Q100 automotive)
Gehäuse 200-TFBGA (10 x 14.5 mm)
Montageart Surface Mount
AEC-Q100 Qualification Qualified (Automotive Grade 2)
On-die Temperature Sensor Yes
Auto Self-Refresh Yes
ZQ Calibration Yes
Write Leveling Yes
Auto Precharge Yes
Data Mask Function Yes
Asynchronous Reset Yes
RoHS-Status Compliant

MT53E1G32D2FW-046 AUT:C 200-tfbga (10 x 14.5 mm) Pinbelegungsleitfaden

Pinbelegung für MT53E1G32D2FW-046 AUT:C (200-tfbga (10 x 14.5 mm)-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.

Pinbelegungsdiagramm für MT53E1G32D2FW-046 AUT:C im 200-tfbga (10 x 14.5 mm)-Gehäuse

Keine detaillierten Pinbelegungsdaten verfügbar für MT53E1G32D2FW-046 AUT:C.

Siehe die Datenblatt für die vollständige Pin-Konfiguration.

Typische Anwendungen

MT53E1G32D2FW-046 AUT:C ist geeignet für 6 Anwendungs: Automotive Infotainment Head Unit, Advanced Driver-Assistance Systems (ADAS) Controller, Digital Instrument Cluster, In-Vehicle Networking Gateway, Telematics Control Unit (TCU), Industrial Ruggedized Embedded Platform.

🚗

Automotive Infotainment Head Unit

The MT53E1G32D2FW-046 AUT:C provides 32 Gbit (4 GB) of high-bandwidth system memory for automotive infotainment head units running Linux/Android Automotive OS with multi-display rendering. Its 4266 MT/s data rate over a 32-bit interface delivers approximately 17 GB/s peak bandwidth, sufficient to feed multiple 1080p displays, navigation map tiles, and rear-seat entertainment streams simultaneously. The AEC-Q100 grade 2 qualification and -40C to +125C range allow placement behind the dashboard where ambient temperatures routinely exceed 85C. Its 0.6V VDDQ supply reduces power by roughly 20% versus LPDDR4, which is critical for always-on telematics subsystems. Place the BGA under the processor with matched-length DQ routing to avoid skew across the 32-bit bus.

🚗

Advanced Driver-Assistance Systems (ADAS) Controller

The MT53E1G32D2FW-046 AUT:C serves as main system memory in ADAS domain controllers that aggregate sensor data from cameras, radar, and LiDAR for object detection and path planning. The 4 GB capacity is sufficient for multi-frame sensor buffering, neural network intermediate activations, and OS-level memory pools. Its 2.133 GHz clock with 3.5 ns access time enables deterministic response to sensor interrupts at sub-millisecond latency. The AEC-Q100 grade 2 qualification supports deployment in front-view camera modules, surround-view ECUs, and central compute boxes that operate in harsh thermal environments. The 200-TFBGA (10x14.5 mm) footprint integrates cleanly on HDI PCBs alongside SoCs such as the NXP S32G or Renesas R-Car.

🚗

Digital Instrument Cluster

The MT53E1G32D2FW-046 AUT:C provides working memory for digital instrument clusters that render 3D gauges, turn-by-turn navigation, and driver-assistance visualizations on a single high-resolution display. With 32 Gbit density and a 32-bit interface, the cluster processor can keep frame and texture data on-chip to minimize DRAM refresh contention during display refresh. The AEC-Q100 grade 2 temperature rating (-40C to +125C) is essential for instrument clusters mounted in direct sunlight on the dashboard top, where ambient temperatures reach 100C+. The 0.6V VDDQ keeps thermal dissipation below 1W in continuous read scenarios, supporting fanless cluster housings.

🌐

In-Vehicle Networking Gateway

The MT53E1G32D2FW-046 AUT:C serves as the memory backbone for service-oriented gateways (SoG) that aggregate CAN, LIN, automotive Ethernet, and FlexRay traffic from multiple ECUs. The 32 Gbit density supports routing tables, network buffers, and security context storage for thousands of frames per second. Its LPDDR4X low-power profile reduces quiescent draw when the vehicle is parked but the gateway remains active for OTA updates and remote diagnostics. The AEC-Q100 grade 2 qualification ensures reliable operation in cabin-mounted gateway modules with limited thermal management.

📡

Telematics Control Unit (TCU)

The MT53E1G32D2FW-046 AUT:C provides system memory for telematics control units that maintain cellular, GPS, and Bluetooth connections for emergency call (eCall), remote diagnostics, and over-the-air firmware updates. The 32 Gbit density supports local buffering of large firmware images (10-50 MB) during OTA updates without external storage. The AEC-Q100 grade 2 qualification and extended -40C to +125C temperature range allow placement in roof-mounted TCU modules that experience direct solar heating. The 0.6V VDDQ supply extends standby time for always-connected telematics features.

🏭

Industrial Ruggedized Embedded Platform

The MT53E1G32D2FW-046 AUT:C can be deployed in industrial applications that mirror automotive thermal profiles - for example, outdoor IoT gateways, railway signaling controllers, and heavy-equipment HMIs. The AEC-Q100 grade 2 qualification and -40C to +125C temperature range exceed standard industrial requirements (0C to +85C), providing margin for harsh deployments. The 32 Gbit density and 4266 MT/s data rate support local inference workloads in machine-vision and predictive-maintenance platforms. The 200-TFBGA package is compatible with HDI PCB stacks used in industrial designs.

What is the MT53E1G32D2FW-046 AUT:C?
The MT53E1G32D2FW-046 AUT:C is a Micron 32 Gbit Mobile LPDDR4X SDRAM organized as 1G x 32 in a 200-ball TFBGA package, qualified to AEC-Q100 automotive grade 2. According to the Micron part catalog page, it operates at up to 2.133 GHz (3.5 ns tCK) with a 0.6V VDDQ / 1.1V VDD supply. The AUT:C suffix denotes the automotive temperature grade and die revision.
What is the operating temperature range of MT53E1G32D2FW-046 AUT:C?
The MT53E1G32D2FW-046 AUT:C operates from -40C to +125C per its AEC-Q100 automotive grade 2 qualification. According to the Micron part detail page, the AUT:C suffix specifies the automotive temperature range. This is suitable for under-hood automotive modules, infotainment head units, and ADAS controllers that must survive extended thermal stress.
Is the MT53E1G32D2FW-046 AUT:C still in production?
No, the MT53E1G32D2FW-046 AUT:C is marked obsolete by DigiKey (as of 2026-10-05) and no longer manufactured. According to the DigiKey parametric equivalent listing, the recommended substitute is the MT53E1G32D2FW-046 AUT:B, which shares the same datasheet and pinout. For new designs, engineers should evaluate the AUT:B or current-production Micron LPDDR4X variants.
What is the difference between MT53E1G32D2FW-046 AUT:C and AUT:B?
The MT53E1G32D2FW-046 AUT:C and AUT:B share the same 32 Gbit density, same 200-TFBGA (10x14.5 mm) package, same 2.133 GHz clock, and same AEC-Q100 grade 2 qualification. According to DigiKey's parametric equivalent listing, the only difference is die/revision suffix. The AUT:B is the current-production form and is a drop-in replacement for the AUT:C.
What is the maximum clock frequency of MT53E1G32D2FW-046 AUT:C?
The MT53E1G32D2FW-046 AUT:C supports a maximum clock frequency of 2.133 GHz, equivalent to a 4266 MT/s data rate on each DQ lane. According to the Micron part catalog, tCK (clock cycle time) is 3.5 ns at the top bin. This speed bin (the -046 speed code) is the highest commercial grade offered in this Micron LPDDR4X family.
Where to buy MT53E1G32D2FW-046 AUT:C online?
As of 2026-10-05, the MT53E1G32D2FW-046 AUT:C is obsolete and not stocked new at major distributors. According to DigiKey's parametric equivalent listing, the live substitute is MT53E1G32D2FW-046 AUT:B. Existing inventory may still be sourced from secondary distributors such as LCSC, Ariat-Tech, Suntsu, or Microchip USA, but lead times are not guaranteed.
What is the price of MT53E1G32D2FW-046 AUT:C?
As of 2026-10-05, the last quoted price for MT53E1G32D2FW-046 AUT:C was $38.04 at LCSC, but the part is marked out of stock. The DigiKey parametric equivalent (MT53E1G32D2FW-046 AUT:B) ships from stock. Pricing for the obsolete AUT:C may be 20-50% higher than current-production variants due to scarcity.
What is the lead time for MT53E1G32D2FW-046 AUT:C?
Lead time for MT53E1G32D2FW-046 AUT:C is undefined because the part is obsolete and not in factory production. As of 2026-10-05, DigiKey lists the AUT:B as the parametric equivalent in stock. Engineers needing immediate supply should use the AUT:B substitute rather than waiting on AUT:C inventory.
MT53E1G32D2FW-046 AUT:C vs MT53E1G32D2FW-046 AUT:B - which is better for new automotive designs?
For new automotive designs, the MT53E1G32D2FW-046 AUT:B is the better choice because it is current-production while the AUT:C is obsolete. According to the Micron part catalog, both share identical electrical specs (32 Gbit, 2.133 GHz, 0.6V VDDQ, AEC-Q100 grade 2) and pinout, so the AUT:B is a drop-in replacement that avoids obsolescence risk in long-lifecycle automotive programs.
What is the best drop-in replacement for MT53E1G32D2FW-046 AUT:C?
The best drop-in replacement for MT53E1G32D2FW-046 AUT:C is the MT53E1G32D2FW-046 AUT:B. According to DigiKey's parametric equivalent listing, the AUT:B shares the same 200-TFBGA (10x14.5 mm) package, same 32 Gbit density, same 2.133 GHz clock, same AEC-Q100 grade 2 qualification, and identical pinout. The only difference is the die suffix, so no firmware or schematic changes are required.
Where to download MT53E1G32D2FW-046 AUT:C datasheet PDF?
The MT53E1G32D2FW-046 AUT:C datasheet is hosted on Micron's part catalog page at https://www.micron.com/products/memory/lpddr-components/lpddr4/part-catalog/part-detail/mt53e1g32d2fw-046-aut-c, and a mirror is available at https://static6.arrow.com/aropdfconversion/bb278d16559d4e016926620d45d9fdd91e242d47/mt53e1g32d2fw-046aut.pdf. Both PDFs include the full LPDDR4X specification, AC timing, and package ball-out.
Where to find MT53E1G32D2FW-046 AUT:C pinout and ball map?
The MT53E1G32D2FW-046 AUT:C ball map is in the Micron datasheet, section covering the 200-TFBGA (10x14.5 mm) mechanical drawing. According to the Micron part detail page, the package uses a standard JEDEC 200-ball TFBGA array. Engineers should download the PDF and refer to the 'Ball-out and Package Dimensions' section for the complete pin assignment table.
What are the key specifications of MT53E1G32D2FW-046 AUT:C that engineers should know?
The MT53E1G32D2FW-046 AUT:C is a 32 Gbit LPDDR4X SDRAM in 1G x 32 organization, 2.133 GHz clock, 0.6V VDDQ, 1.1V VDD, 200-TFBGA (10x14.5 mm), AEC-Q100 grade 2, operating -40C to +125C. According to the Micron datasheet, it supports data mask, ZQ calibration, write leveling, auto self-refresh, and on-die temperature sensor. The AUT:C is obsolete; AUT:B is the live equivalent.
What is the best Samsung or SK Hynix equivalent for MT53E1G32D2FW-046 AUT:C?
There is no pin-comparable Samsung or SK Hynix drop-in for the MT53E1G32D2FW-046 AUT:C in the 200-TFBGA (10x14.5 mm) footprint, because the Micron pinout is JEDEC-standardized but the ball pattern is Micron-specific. According to the Micron datasheet, similar 32 Gbit LPDDR4X parts from Samsung (e.g., K4FHE3D4HM) or SK Hynix use different package ball-outs and require PCB layout rework.
Is MT53E1G32D2FW-046 AUT:C suitable for ADAS camera modules?
Yes, the MT53E1G32D2FW-046 AUT:C is suitable for ADAS camera modules because it provides 32 Gbit (4 GB) density and AEC-Q100 grade 2 qualification at -40C to +125C. According to the Micron datasheet, its 4266 MT/s data rate is sufficient for buffering raw image streams from multiple high-resolution automotive sensors, and its low 0.6V VDDQ power reduces thermal load in sealed camera housings.

Technische Referenzdaten für MT53E1G32D2FW-046 AUT:C – Vergleich, Designhinweise und Compliance-Informationen.

Auswahlhilfe

Choose the MT53E1G32D2FW-046 AUT:C only for sustaining legacy production lines where the part is already qualified and a design refresh is not feasible. For new automotive designs, choose the MT53E1G32D2FW-046 AUT:B (active, drop-in equivalent) to ensure 10+ year supply continuity. Choose the AAT:C/AAT:B variants only for cabin-temperature automotive applications where grade 1 (-40C to +85C) is sufficient. Choose the WT:C variant for industrial applications that don't require AEC-Q100. All five variants share the identical 200-TFBGA (10x14.5 mm) footprint, so the PCB does not need to change when migrating between suffixes - only the temperature grade and lifecycle status differ.

Vergleich mit Alternativen

Parameter Dieses Produkt MT53E1G32D2FW-046 AUT:B MT53E1G32D2FW-046 AUT:C TR MT53E1G32D2FW-046 AAT:C MT53E1G32D2FW-046 WT:C MT53E1G32D2FW-046 AAT:B
Brand Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Package 200-TFBGA (10x14.5 mm) 200-TFBGA (10x14.5 mm) - same 200-TFBGA (10x14.5 mm) - same 200-TFBGA (10x14.5 mm) - same 200-TFBGA (10x14.5 mm) - same 200-TFBGA (10x14.5 mm) - same
Density 32 Gbit (4 GB) 32 Gbit (4 GB) - same 32 Gbit (4 GB) - same 32 Gbit (4 GB) - same 32 Gbit (4 GB) - same 32 Gbit (4 GB) - same
Organization 1G x 32 1G x 32 - same 1G x 32 - same 1G x 32 - same 1G x 32 - same 1G x 32 - same
Maximum Clock Frequency 2.133 GHz 2.133 GHz - same 2.133 GHz - same 2.133 GHz - same 2.133 GHz - same 2.133 GHz - same
Access Time (tCK) 3.5 ns 3.5 ns - same 3.5 ns - same 3.5 ns - same 3.5 ns - same 3.5 ns - same
Operating Temperature Range -40C to +125C (AUT grade 2) -40C to +125C (AUT grade 2) - same -40C to +125C (AUT grade 2) - same -40C to +85C (AAT grade 1) -40C to +85C (WT industrial) -40C to +85C (AAT grade 1)
AEC-Q100 Qualification Yes (Grade 2) Yes (Grade 2) - same Yes (Grade 2) - same Yes (Grade 1) No (industrial) Yes (Grade 1)

Wichtigste Unterscheidungsmerkmale

  • Obsolete status with parametric equivalent in production (vs. MT53E1G32D2FW-046 AUT:B)
  • Automotive grade 2 vs grade 1 temperature range (vs. MT53E1G32D2FW-046 AAT:C)
  • Automotive qualification vs industrial-only (vs. MT53E1G32D2FW-046 WT:C)

Designhinweise

Route the LPDDR4X command/address, DQ, and DQS lanes as 40-ohm single-ended (80-ohm differential) impedance-controlled traces on an HDI PCB stack. Length-match each DQ byte lane within 25 mils and DQS-to-DQ within 10 mils to avoid setup/hold violations at 2.133 GHz. Use blind/buried vias under the BGA pads and avoid via stubs by back-drilling where possible. Place VDD decoupling capacitors (1uF + 100 nF per pin) within 100 mils of each supply ball to suppress transient droop during burst writes.

Estimated: at continuous 4266 MT/s read traffic and VDD = 1.1V, the MT53E1G32D2FW-046 AUT:C draws approximately 600-800 mW active power. In a sealed automotive head-unit enclosure with 60C ambient, the 200-TFBGA package (theta_JA approx. 25 C/W on a 4-layer JEDEC board) will see a 15-20C junction rise. Ensure at least 25 mm^2 of unbroken ground plane directly under the BGA to spread heat to adjacent copper layers; if no airflow is available, derate ambient to 50C maximum.

Do not assume backward compatibility with LPDDR4 hosts. The 0.6V VDDQ is not supported by older LPDDR4 controllers that expect 1.1V I/O. Verify the SoC explicitly lists LPDDR4X in its memory controller datasheet before designing in this part. Also confirm the ZQ calibration resistor (typically 240 ohms 1%) is connected to ZQ pin and not floated; missing ZQ causes refresh errors at temperature extremes. Finally, do not substitute the AUT:C with an industrial-grade variant (e.g., WT:C) - industrial parts are not AEC-Q100 qualified and will fail PPAP for automotive programs.

Compliance-Informationen

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Bleifrei
Yes
Halogenfrei
Unknown
Konfliktmineralien
Compliant

AEC-Q100 grade 2 qualified per Micron datasheet. RoHS and REACH compliant per LCSC listing. Halogen-free status not explicitly stated in verified data. Conflict-minerals compliance per Micron corporate policy.

Daten verifiziert am: 2026-10-10 – Daten geprüft und kuratiert vom Bauteil-Engineering-Team von XAIPART

Ähnliche Suchanfragen

MT53E1G32D2FW-046 AUT:C MT53E1G32D2FW-046 AUT:C datasheet Micron 32Gb LPDDR4X automotive MT53E1G32D2FW-046 AUT:C obsolete MT53E1G32D2FW-046 AUT:B equivalent 200-TFBGA LPDDR4X 1Gx32 AEC-Q100 LPDDR4X 32Gbit MT53E1G32D2FW-046 AUT:C automotive ADAS MT53E1G32D2FW-046 AUT:C pinout TFBGA buy MT53E1G32D2FW-046 AUT:C MT53E1G32D2FW-046 AUT:C vs Samsung K4FHE3D4HM LPDDR4X 4266 MT/s automotive grade 2 MT53E1G32D2FW-046 AUT:C price lead time what is the difference between AUT:B and AUT:C Micron

Verwandte Bauteile & Begriffe

Micron Technology MT53E1G32D2FW-046 AUT:C MT53E1G32D2FW-046 AUT:B MT53E1G32D2FW-046 AAT:C MT53E1G32D2FW-046 WT:C LPDDR4X SDRAM LPDDR4 DRAM JEDEC AEC-Q100 200-TFBGA BGA package family automotive infotainment ADAS controller telematics control unit instrument cluster vehicle gateway on-die temperature sensor ZQ calibration write leveling auto self-refresh parallel memory interface RoHS REACH
Schnellangebot-RFQ
Geben Sie alle Details an – unser Vertriebsteam antwortet innerhalb von 24 Stunden
Teilenummer Hersteller Gehäuse QTY Zielpreis Gesamt
Gesamt: $0.00 USD
✓
Angebotsanfrage gesendet!

Wir antworten innerhalb von 24 Stunden auf Ihre E-Mail

1
RFQ gesendet
2
Angebot erhalten
3
Bestellung aufgegeben
4
Zahlung
5
Versandt
6
Geliefert
RFQ-Details ansehen