MT53E1G32D2FW-046 AUT:C - 32Gb LPDDR4X SDRAM | Micron Automotive
Référence : MT53E1G32D2FW-046 AUT:C ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $38.04 | $38,04 |
| 10 | $33.5 | $335,00 |
| 100 | $28.9 | $2 890,00 |
| 500 | $24.2 | $12 100,00 |
| 1 000 | $21.5 | $21 500,00 |
MT53E1G32D2FW-046 AUT:C Présentation
LPDDR4X SDRAM is a low-power double data rate synchronous DRAM standard defined by JEDEC, optimized for mobile, automotive, and embedded platforms. Within the memory hierarchy, LPDDR4X sits between LPDDR4 and LPDDR5: it lowers the I/O voltage from 1.1V to 0.6V versus LPDDR4 while maintaining the same internal VDD of 1.1V, reducing dynamic power by roughly 20% at equivalent throughput. Micron's Mobile LPDDR4X family is widely deployed in automotive infotainment, ADAS controllers, and telematics modules where high density, low power, and AEC-Q100 qualification converge.
Key features include a 32 Gbit density in a single die, 32-bit data width per channel, a maximum clock of 2.133 GHz (data rate 4266 MT/s), on-die temperature sensor with auto self-refresh, ZQ calibration, write leveling, auto precharge, asynchronous reset, and data mask function. The 200-TFBGA package (10 x 14.5 mm) integrates the full 32 Gbit on a single chip, eliminating the need for multi-chip packaging at this density.
Typical applications include automotive infotainment head units, advanced driver-assistance systems (ADAS) controllers, digital instrument clusters, in-vehicle networking gateways, and ruggedized telematics control units. The wide operating temperature range (automotive grade 2: -40C to +105C with peak support up to +125C) and AEC-Q100 qualification make this part suitable for under-hood and outdoor-mounted automotive modules.
When designing with this LPDDR4X, ensure the host SoC supports LPDDR4X (not just LPDDR4), since the 0.6V VDDQ requirement is not backward compatible. Route the high-speed command/address and DQ lanes as impedance-controlled 80-ohm differential or 40-ohm single-ended traces, with length matching within 25 mils across the byte lane.
Alternatives de remplacement direct pour MT53E1G32D2FW-046 AUT:C — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MT53E1G32D2FW-046 AUT:C (même facteur de forme et même empreinte) — différant par Memory Type, Package.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT53E1G32D2FW-046 AUT:B
✅ Remplacement direct✓ En stock
$273.51 / unité
Voir la fiche technique →MT53E1G32D2FW-046 AUT:C TR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT53E1G32D2FW-046 AAT:C
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT53E1G32D2FW-046 WT:C
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT53E1G32D2FW-046 AAT:B
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT53E1G32D2FW-046 AUT:C Valeurs maximales et caractéristiques électriques
| Type de mémoire | Volatile DRAM (LPDDR4X SDRAM) |
| Taille de mémoire | 32 Gbit (4 GB) |
| Memory Organization | 1G x 32 |
| Type d'interface | Parallel |
| Fréquence d'horloge maximale | 2.133 GHz |
| Access Time | 3.5 ns |
| Débit de données | 4266 MT/s |
| Supply Voltage VDD | 1.1 V |
| Supply Voltage VDDQ | 0.6 V |
| Plage de température de fonctionnement | -40°C to +125°C (AEC-Q100 automotive) |
| Boîtier | 200-TFBGA (10 x 14.5 mm) |
| Type de montage | Surface Mount |
| AEC-Q100 Qualification | Qualified (Automotive Grade 2) |
| On-die Temperature Sensor | Yes |
| Auto Self-Refresh | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
| Auto Precharge | Yes |
| Data Mask Function | Yes |
| Asynchronous Reset | Yes |
| Statut RoHS | Compliant |
Guide de configuration des broches du MT53E1G32D2FW-046 AUT:C 200-tfbga (10 x 14.5 mm)
Configuration des broches du MT53E1G32D2FW-046 AUT:C (boîtier 200-tfbga (10 x 14.5 mm)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour MT53E1G32D2FW-046 AUT:C.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
MT53E1G32D2FW-046 AUT:C convient pour 6 applications: Automotive Infotainment Head Unit, Advanced Driver-Assistance Systems (ADAS) Controller, Digital Instrument Cluster, In-Vehicle Networking Gateway, Telematics Control Unit (TCU), Industrial Ruggedized Embedded Platform.
Automotive Infotainment Head Unit
The MT53E1G32D2FW-046 AUT:C provides 32 Gbit (4 GB) of high-bandwidth system memory for automotive infotainment head units running Linux/Android Automotive OS with multi-display rendering. Its 4266 MT/s data rate over a 32-bit interface delivers approximately 17 GB/s peak bandwidth, sufficient to feed multiple 1080p displays, navigation map tiles, and rear-seat entertainment streams simultaneously. The AEC-Q100 grade 2 qualification and -40C to +125C range allow placement behind the dashboard where ambient temperatures routinely exceed 85C. Its 0.6V VDDQ supply reduces power by roughly 20% versus LPDDR4, which is critical for always-on telematics subsystems. Place the BGA under the processor with matched-length DQ routing to avoid skew across the 32-bit bus.
Recommandé
Advanced Driver-Assistance Systems (ADAS) Controller
The MT53E1G32D2FW-046 AUT:C serves as main system memory in ADAS domain controllers that aggregate sensor data from cameras, radar, and LiDAR for object detection and path planning. The 4 GB capacity is sufficient for multi-frame sensor buffering, neural network intermediate activations, and OS-level memory pools. Its 2.133 GHz clock with 3.5 ns access time enables deterministic response to sensor interrupts at sub-millisecond latency. The AEC-Q100 grade 2 qualification supports deployment in front-view camera modules, surround-view ECUs, and central compute boxes that operate in harsh thermal environments. The 200-TFBGA (10x14.5 mm) footprint integrates cleanly on HDI PCBs alongside SoCs such as the NXP S32G or Renesas R-Car.
Recommandé
Digital Instrument Cluster
The MT53E1G32D2FW-046 AUT:C provides working memory for digital instrument clusters that render 3D gauges, turn-by-turn navigation, and driver-assistance visualizations on a single high-resolution display. With 32 Gbit density and a 32-bit interface, the cluster processor can keep frame and texture data on-chip to minimize DRAM refresh contention during display refresh. The AEC-Q100 grade 2 temperature rating (-40C to +125C) is essential for instrument clusters mounted in direct sunlight on the dashboard top, where ambient temperatures reach 100C+. The 0.6V VDDQ keeps thermal dissipation below 1W in continuous read scenarios, supporting fanless cluster housings.
Recommandé
In-Vehicle Networking Gateway
The MT53E1G32D2FW-046 AUT:C serves as the memory backbone for service-oriented gateways (SoG) that aggregate CAN, LIN, automotive Ethernet, and FlexRay traffic from multiple ECUs. The 32 Gbit density supports routing tables, network buffers, and security context storage for thousands of frames per second. Its LPDDR4X low-power profile reduces quiescent draw when the vehicle is parked but the gateway remains active for OTA updates and remote diagnostics. The AEC-Q100 grade 2 qualification ensures reliable operation in cabin-mounted gateway modules with limited thermal management.
Recommandé
Telematics Control Unit (TCU)
The MT53E1G32D2FW-046 AUT:C provides system memory for telematics control units that maintain cellular, GPS, and Bluetooth connections for emergency call (eCall), remote diagnostics, and over-the-air firmware updates. The 32 Gbit density supports local buffering of large firmware images (10-50 MB) during OTA updates without external storage. The AEC-Q100 grade 2 qualification and extended -40C to +125C temperature range allow placement in roof-mounted TCU modules that experience direct solar heating. The 0.6V VDDQ supply extends standby time for always-connected telematics features.
Recommandé
Industrial Ruggedized Embedded Platform
The MT53E1G32D2FW-046 AUT:C can be deployed in industrial applications that mirror automotive thermal profiles - for example, outdoor IoT gateways, railway signaling controllers, and heavy-equipment HMIs. The AEC-Q100 grade 2 qualification and -40C to +125C temperature range exceed standard industrial requirements (0C to +85C), providing margin for harsh deployments. The 32 Gbit density and 4266 MT/s data rate support local inference workloads in machine-vision and predictive-maintenance platforms. The 200-TFBGA package is compatible with HDI PCB stacks used in industrial designs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT53E1G32D2FW-046 AUT:C — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT53E1G32D2FW-046 AUT:B | MT53E1G32D2FW-046 AUT:C TR | MT53E1G32D2FW-046 AAT:C | MT53E1G32D2FW-046 WT:C | MT53E1G32D2FW-046 AAT:B |
|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Package | 200-TFBGA (10x14.5 mm) | 200-TFBGA (10x14.5 mm) - same | 200-TFBGA (10x14.5 mm) - same | 200-TFBGA (10x14.5 mm) - same | 200-TFBGA (10x14.5 mm) - same | 200-TFBGA (10x14.5 mm) - same |
| Density | 32 Gbit (4 GB) | 32 Gbit (4 GB) - same | 32 Gbit (4 GB) - same | 32 Gbit (4 GB) - same | 32 Gbit (4 GB) - same | 32 Gbit (4 GB) - same |
| Organization | 1G x 32 | 1G x 32 - same | 1G x 32 - same | 1G x 32 - same | 1G x 32 - same | 1G x 32 - same |
| Maximum Clock Frequency | 2.133 GHz | 2.133 GHz - same | 2.133 GHz - same | 2.133 GHz - same | 2.133 GHz - same | 2.133 GHz - same |
| Access Time (tCK) | 3.5 ns | 3.5 ns - same | 3.5 ns - same | 3.5 ns - same | 3.5 ns - same | 3.5 ns - same |
| Operating Temperature Range | -40C to +125C (AUT grade 2) | -40C to +125C (AUT grade 2) - same | -40C to +125C (AUT grade 2) - same | -40C to +85C (AAT grade 1) | -40C to +85C (WT industrial) | -40C to +85C (AAT grade 1) |
| AEC-Q100 Qualification | Yes (Grade 2) | Yes (Grade 2) - same | Yes (Grade 2) - same | Yes (Grade 1) | No (industrial) | Yes (Grade 1) |
Principaux différenciateurs
- Obsolete status with parametric equivalent in production (vs MT53E1G32D2FW-046 AUT:B)
- Automotive grade 2 vs grade 1 temperature range (vs MT53E1G32D2FW-046 AAT:C)
- Automotive qualification vs industrial-only (vs MT53E1G32D2FW-046 WT:C)
Notes de conception
Route the LPDDR4X command/address, DQ, and DQS lanes as 40-ohm single-ended (80-ohm differential) impedance-controlled traces on an HDI PCB stack. Length-match each DQ byte lane within 25 mils and DQS-to-DQ within 10 mils to avoid setup/hold violations at 2.133 GHz. Use blind/buried vias under the BGA pads and avoid via stubs by back-drilling where possible. Place VDD decoupling capacitors (1uF + 100 nF per pin) within 100 mils of each supply ball to suppress transient droop during burst writes.
Estimated: at continuous 4266 MT/s read traffic and VDD = 1.1V, the MT53E1G32D2FW-046 AUT:C draws approximately 600-800 mW active power. In a sealed automotive head-unit enclosure with 60C ambient, the 200-TFBGA package (theta_JA approx. 25 C/W on a 4-layer JEDEC board) will see a 15-20C junction rise. Ensure at least 25 mm^2 of unbroken ground plane directly under the BGA to spread heat to adjacent copper layers; if no airflow is available, derate ambient to 50C maximum.
Do not assume backward compatibility with LPDDR4 hosts. The 0.6V VDDQ is not supported by older LPDDR4 controllers that expect 1.1V I/O. Verify the SoC explicitly lists LPDDR4X in its memory controller datasheet before designing in this part. Also confirm the ZQ calibration resistor (typically 240 ohms 1%) is connected to ZQ pin and not floated; missing ZQ causes refresh errors at temperature extremes. Finally, do not substitute the AUT:C with an industrial-grade variant (e.g., WT:C) - industrial parts are not AEC-Q100 qualified and will fail PPAP for automotive programs.
Informations de conformité
AEC-Q100 grade 2 qualified per Micron datasheet. RoHS and REACH compliant per LCSC listing. Halogen-free status not explicitly stated in verified data. Conflict-minerals compliance per Micron corporate policy.
