MT53E1G32D2FW-046 AUT:B - 32Gbit LPDDR4X DRAM | Micron
MPN: MT53E1G32D2FW-046 AUT:B β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $341.88 | $341.88 |
| 10 | $324.79 | $3,247.90 |
| 100 | $307.69 | $30,769.00 |
| 500 | $290.6 | $145,300.00 |
| 1,000 | $273.51 | $273,510.00 |
Drop-in alternatives for MT53E1G32D2FW-046 AUT:B β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
MT53E512M32D1ZW-046 AUT:B
β Drop-Inπ Reference alternative (not in catalog)
MT53E256M32D2DS-046 AUT:B
β Drop-Inπ Reference alternative (not in catalog)
MT53E256M32D2DS-053 AUT:B
β Drop-Inπ Reference alternative (not in catalog)
MT53E2G32D4DE-046 AUT:C
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$31.5 / Unit
View Datasheet βMT53E1G32D2FW-046 AUT:E
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
MT53E1G32D2FW-046 AUT:B Maximum Ratings & Electrical Characteristics
| Memory Type | SDRAM - Mobile LPDDR4X |
| Memory Size | 32 Gbit (4 GB) |
| Organization | x32 Parallel |
| Clock Frequency | 2.133 GHz |
| Access Time / Clock Cycle | 3.5 ns |
| Interface | Parallel |
| Package | 200-TFBGA (10 mm x 14.5 mm) |
| Operating Temperature | -40C to +125C |
| Temperature Grade | Automotive (AUT) |
| Self-Refresh | Auto self-refresh |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Write Leveling | Yes |
| ZQ Calibration | Yes |
| Mounting Type | Surface Mount |
MT53E1G32D2FW-046 AUT:B 200-tfbga (10 mm x 14.5 mm) Pin Configuration Guide
Complete pinout information for MT53E1G32D2FW-046 AUT:B (200-tfbga (10 mm x 14.5 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for MT53E1G32D2FW-046 AUT:B.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
MT53E1G32D2FW-046 AUT:B is suitable for 6 applications: ADAS Domain Controller Main Memory, Automotive Digital Cockpit / Infotainment, Telematics and Connectivity Gateways, Industrial Edge-AI Vision Modules, Mobile and Handheld Devices, Automotive Test and Measurement Equipment.
ADAS Domain Controller Main Memory
Advanced driver assistance domain controllers aggregate multiple camera, radar, and lidar streams and run neural-network inference in real time, demanding both high DRAM bandwidth and large buffering capacity. The MT53E1G32D2FW-046 AUT:B fits this role with 32 Gbit of LPDDR4X storage and a 2.133 GHz data rate over a x32 parallel interface, delivering multi-GB/s class bandwidth for sensor-fusion pipelines. Its -40C to +125C automotive temperature range and auto self-refresh with built-in temperature sensor maintain data integrity across harsh vehicle environments. Placed beside the ADAS SoC on a length-matched fly-by bus, it reduces overall system power versus LPDDR4 thanks to 0.6V VDDQ operation.
Recommended
Automotive Digital Cockpit / Infotainment
Digital cockpits drive multiple high-resolution displays, navigation engines, and voice assistants concurrently, requiring main memory that sustains high sustained bandwidth at low power to protect battery and thermal budgets. The MT53E1G32D2FW-046 AUT:B provides 4 GB of LPDDR4X at 2.133 GHz with a 3.5 ns cycle time, sufficient for triple-display clusters running map rendering plus media playback. The 200-TFBGA (10 mm x 14.5 mm) footprint integrates into dense cockpit PCBs, and the AUT:B automotive grade covers the extended cabin temperature range. Its auto precharge and write leveling features simplify host-controller bring-up on infotainment SoC platforms.
Recommended
Telematics and Connectivity Gateways
Vehicle telematics gateways terminate cellular, V2X, and CAN/Ethernet backbones, buffering message queues and running security stacks in DRAM. The MT53E1G32D2FW-046 AUT:B supplies 32 Gbit of LPDDR4X working memory within a modest power envelope, aided by auto self-refresh that scales refresh rate via its built-in temperature sensor. The -40C to +125C operating range suits gateway ECUs mounted in the engine bay or underbody. Its x32 interface keeps pin count and routing layers manageable on cost-sensitive gateway boards, while ZQ calibration maintains signal integrity over automotive voltage and temperature excursions across the vehicle lifetime.
Recommended
Industrial Edge-AI Vision Modules
Industrial machine-vision and edge-AI modules need DRAM-class bandwidth for frame buffers and inference activation memory while running passively cooled. The MT53E1G32D2FW-046 AUT:B delivers 2.133 GHz LPDDR4X bandwidth in a compact 200-TFBGA package, and its automotive temperature grade (-40C to +125C) comfortably exceeds industrial ambient requirements, providing margin in sealed enclosures. The 0.6V VDDQ interface cuts I/O power relative to standard DDR4, reducing heat in fanless designs. Write leveling and ZQ calibration simplify memory-controller tuning across varied SoC vendors used in industrial smart-camera and robotics platforms.
Recommended
Mobile and Handheld Devices
The LPDDR4X architecture was originally optimized for smartphones and tablets, where bandwidth-per-watt determines battery life. The MT53E1G32D2FW-046 AUT:B brings 4 GB of x32 LPDDR4X at 2.133 GHz to ruggedized handhelds, portable test instruments, and professional mobile devices that inherit automotive-grade reliability requirements. Its 200-TFBGA (10 mm x 14.5 mm) body suits the dense stacked layouts of handheld PCBs, and auto self-refresh with a built-in temperature sensor minimizes standby current between wake events, directly extending battery runtime in always-on portable products operating across wide ambient conditions.
Recommended
Automotive Test and Measurement Equipment
Automotive validation tools - bus analyzers, HIL (hardware-in-the-loop) systems, and data loggers - capture sustained multi-channel streams that demand deep DRAM buffers with guaranteed operation in workshop and vehicle temperature extremes. The MT53E1G32D2FW-046 AUT:B offers 32 Gbit of LPDDR4X buffering with a 3.5 ns cycle time, supporting continuous high-rate capture of CAN-FD, automotive Ethernet, and video streams. The -40C to +125C grade allows loggers to ride inside vehicles during hot/cold-weather test campaigns. Its x32 parallel interface and standard 200-TFBGA footprint enable straightforward integration into host-controller memory subsystems.
Recommended
Recommended Products Summary
Engineering reference data for MT53E1G32D2FW-046 AUT:B β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT53E512M32D1ZW-046 AUT:B | MT53E256M32D2DS-046 AUT:B | MT53E256M32D2DS-053 AUT:B |
|---|---|---|---|---|
| Package | 200-TFBGA (10 mm x 14.5 mm) | 200-TFBGA (10 mm x 14.5 mm) - same | 200-TFBGA (WFBGA) - same footprint | 200-TFBGA (WFBGA) - same footprint |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Memory Density | 32 Gbit (4 GB) | 16 Gbit (2 GB) | 8 Gbit (1 GB) | 8 Gbit (1 GB) |
| Memory Technology | LPDDR4X (0.6V VDDQ) | LPDDR4X | Unified LPDDR4/LPDDR4X | LPDDR4 |
| Data Rate / Clock | 2.133 GHz | 2.133 GHz | 2.133 GHz (-046) | [DATA_NEEDED] (-053 speed bin) |
| Cycle Time | 3.5 ns | 3.5 ns | [DATA_NEEDED] | [DATA_NEEDED] |
| Organization | x32 | x32 | x32 | x32 |
| Automotive Temperature Range | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +125C |
| Approx. Unit Price (qty 1, as of 2026-09-02) | $341.88 (LCSC) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Highest density in the verified drop-in footprint (vs MT53E512M32D1ZW-046 AUT:B)
- Faster speed bin than the -053 alternative (vs MT53E256M32D2DS-053 AUT:B)
- LPDDR4X power efficiency vs LPDDR4 alternatives (vs MT53E256M32D2DS-053 AUT:B)
Design Notes
At the 2133 MHz data rate, LPDDR4X routing is the primary failure mode in first-pass designs. Use fly-by routing for the CA bus with per-trace length matching to the SoC guide tolerance, and match each DQS-DQ group with symmetric serpentine tuning. Target 40-ohm single-ended impedance, keep memory traces on inner layers with solid ground references, and re-simulate with Micron IBIS models whenever stackup changes. Estimated: a typical ADAS SoC layout uses 4+ memory routing layers; budget stackup cost early.
LPDDR4X uses two supply domains: VDD (core, typically 1.1V per family convention) and VDDQ (0.6V I/O). Place the bulk capacitance plus a dense grid of 100 nF 0201/0402 decoupling capacitors directly beneath the 200-TFBGA ball field on the far-side PCB surface. The 0.6V VDDQ rail carries high transient currents at burst boundaries; size the PMIC rail with adequate transient headroom and verify droop with a load-step simulation. Never share VDDQ with noisy digital rails.
Verify the controller memory map against actual density before software freeze: swapping between 32 Gbit (MT53E1G32D2FW) and 16 Gbit (MT53E512M32D1ZW) drop-in alternatives changes row/column addressing. Also confirm the exact Micron suffix code (AUT:B vs AUT:C vs AUT:E) required by your PPAP traceability - mixing suffix codes on one board breaks automotive documentation continuity even when the electrical function is identical. Finally, the -046 speed bin must be selected in the host controller init tables.
Compliance Information
The verified web data does not state RoHS/REACH/AEC-Q100 status for this MPN. The AUT suffix indicates Micron's automotive temperature grade (-40C to +125C); exact AEC-Q100 qualification level must be confirmed via Micron quality documentation / PPAP.
