NTHL045N065SC1 - 650V 32mΩ SiC MOSFET TO-247-3 | onsemi
Teilenummer: NTHL045N065SC1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $11.84 | $11,84 |
| 10 | $10.85 | $108,50 |
| 100 | $9.47 | $947,00 |
| 500 | $8.62 | $4.310,00 |
| 1.000 | $7.9 | $7.900,00 |
NTHL045N065SC1 Übersicht
A SiC MOSFET is a type of power transistor that uses silicon carbide instead of silicon as the semiconductor material. SiC offers a wider bandgap (approximately 3.2 eV versus 1.1 eV for silicon), higher critical electric field, and better thermal conductivity. Within the power semiconductor hierarchy, MOSFETs sit above discrete diodes and below full power modules, and SiC MOSFETs form a subset of power management devices used in switching converters.
Key features of the NTHL045N065SC1 include its low 32 mΩ on-resistance, which minimizes conduction losses; compact chip size that reduces gate charge and device capacitance for faster, more efficient switching; and a 175°C maximum junction temperature rating (TJ < 175°C per the onsemi datasheet). Compared to silicon superjunction MOSFETs at the same voltage class, the SiC die delivers superior switching performance and higher reliability.
The M2 technology platform provides system-level benefits including highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced overall system size, as stated by onsemi. The short intrinsic body diode recovery characteristics and low capacitances make the device well suited for hard-switching and resonant topologies operating at frequencies well above what silicon allows.
Typical applications include solar string and micro inverters, EV on-board chargers and DC-DC converters, server and telecom power supplies, energy storage systems, and industrial motor drives. In these circuits the 650 V rating covers rectified 400 V DC bus applications with headroom, while the 32 mΩ RDS(on) keeps conduction loss low at multi-kilowatt output levels.
A key design consideration is gate drive: SiC MOSFETs typically require a gate drive voltage around +15 V for full enhancement, and careful attention to gate-loop inductance and Kelvin-source connections preserves the device's low switching losses. Always verify drain-source voltage ringing stays within the 650 V rating using appropriate snubbers or reduced loop inductance.
This page synthesizes distributor pricing, drop-in alternatives across onsemi, Infineon and ROHM families, and practical design notes not found in the manufacturer datasheet, providing engineers a complete selection resource as of 2026-10-11.
Drop-in-Alternativen für NTHL045N065SC1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
NTH4L040N065SC1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
NTHL080N065SC1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IMZA65R045M1H
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SCT3060KLGC11
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SCT3040KLGC11
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IMW65R045M1H
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
NTHL045N065SC1 Grenzwerte & elektrische Eigenschaften
| Technology | Silicon Carbide (SiC) MOSFET, M2 |
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 650 V |
| On-Resistance (RDS(on)) | 32 mOhm |
| Continuous Drain Current (ID) | 66 A (Tc) |
| Power Dissipation (PD) | 291 W (Tc) |
| Gehäuse | TO-247-3 (Through Hole) |
| Maximum Junction Temperature | 175 C (TJ < 175C) |
| Montageart | Through Hole |
| Configuration | Single FET |
| RoHS-Status | Compliant with exemption 7a |
| Halide Free | Yes |
| Anzahl der Pins | 3 |
NTHL045N065SC1 Pin-Konfiguration
| Pin 1 | Gate — Gate control terminal |
| Pin 2 | Drain — Drain terminal (also connected to mounting tab) |
| Pin 3 | Source — Source terminal |
Sicherer Arbeitsbereich (Estimated from 650 V / 66 A class SiC MOSFET characteristics)
Typische Anwendungen
NTHL045N065SC1 ist geeignet für 6 Anwendungs: Solar String Inverters, EV On-Board Chargers and DC-DC, Server and Telecom Power Supplies, Energy Storage Systems (ESS), Industrial Motor Drives, Fast EV Charging Infrastructure.
Solar String Inverters
In solar string inverters and MPPT boost converters, the NTHL045N065SC1's 650 V rating comfortably covers rectified 400 V DC bus designs while its 32 mΩ on-resistance minimizes conduction loss at the 15-30 A continuous currents typical of multi-kilowatt strings. Placed in a boost stage between the PV input and the DC bus, the SiC die switches efficiently at 50-100 kHz, allowing smaller inductors and higher power density than silicon solutions. onsemi states the M2 platform delivers highest efficiency, faster operation frequency, and increased power density, which directly translates to higher inverter efficiency ratings and lower levelized energy cost.
Empfohlen
EV On-Board Chargers and DC-DC
Electric-vehicle on-board chargers (OBC) and high-voltage DC-DC converters use 650 V SiC MOSFETs like the NTHL045N065SC1 in PFC and LLC or CLLLC stages. The 32 mΩ RDS(on) keeps conduction losses low in the 3.3-11 kW power range, while the low chip capacitances reduce gate charge and switching energy, enabling LLC operation well above 100 kHz for smaller transformers. The TJ < 175°C rating provides thermal headroom in coolant-cooled or confined enclosures. Careful gate-loop layout preserves the low switching losses; consider negative gate bias at turn-off to block dv/dt-induced turn-on in bridge legs.
Empfohlen
Server and Telecom Power Supplies
Server CRPS power supplies and telecom rectifiers in the 1-3 kW class use the NTHL045N065SC1 in bridgeless PFC front ends and LLC stages from a 400 V bus. The 32 mΩ on-resistance reduces conduction loss versus 45-60 mΩ alternatives such as Infineon IMZA65R045M1H, directly improving 80 PLUS Titanium-class efficiency targets. Because the M2 SiC platform switches cleanly at high frequency, designers can shrink magnetics and raise power density to meet rack-space constraints. The through-hole TO-247-3 package also simplifies thermal design with bolted heatsinks in high-vibration server environments.
Empfohlen
Energy Storage Systems (ESS)
Battery energy storage bidirectional converters benefit from the NTHL045N065SC1's combination of 650 V blocking, 32 mΩ conduction, and 66 A current capability at case temperatures. In bidirectional boost/buck stages between 400 V battery strings and the DC link, the SiC MOSFET's low switching losses improve round-trip efficiency, which compounds over thousands of charge cycles. The 175°C junction rating tolerates the high ambient and derated cooling margins common in outdoor ESS cabinets. onsemi highlights higher reliability versus silicon as a key M2 platform benefit, important for 10-15 year field life expectations.
Empfohlen
Industrial Motor Drives
In industrial servo drives and high-speed motor inverters supplied from a rectified three-phase 400 V line (approximately 560 V DC bus), the NTHL045N065SC1's 650 V rating fits with limited margin, so snubbing and reduced DC-link ringing are advised. The 32 mΩ on-resistance limits conduction heating in the 20-40 A phase currents of multi-kilowatt drives. SiC switching speeds enable higher PWM frequencies that reduce audible noise and current ripple in the motor windings. Ensure gate drivers include desaturation or overcurrent protection and Miller-clamp features given the TO-247-3 package's common-source inductance.
Empfohlen
Fast EV Charging Infrastructure
DC fast-charger power modules (15-30 kW building blocks) cascade PFC and CLLLC stages on a 400-800 V architecture where 650 V SiC MOSFETs are the workhorse. The NTHL045N065SC1's 66 A current rating and 32 mΩ RDS(on) allow fewer parallel devices per bridge leg than higher-resistance alternatives, simplifying current sharing and layout symmetry. The M2 platform's low gate charge reduces driver loss when many devices are paralleled. The TO-247-3 through-hole package bolts directly to cold plates via insulating pads, an accepted practice in charger power racks for serviceability.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für NTHL045N065SC1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | NTH4L040N065SC1 | IMZA65R045M1H | SCT3040KLGC11 | SCT3060KLGC11 |
|---|---|---|---|---|---|
| Package | TO-247-3 | TO-247-3 - same | TO-247-3 fullPAK - same pinout | TO-247-3L - same pinout | TO-247-3L - same pinout |
| Brand | onsemi | onsemi | Infineon | ROHM Semiconductor | ROHM Semiconductor |
| Drain-Source Voltage | 650 V | 650 V | 650 V | 650 V | 650 V |
| On-Resistance RDS(on) | 32 mOhm | 40 mOhm | 45 mOhm | 40 mOhm | 60 mOhm |
| Technology Generation | M2 (SiC) | M3s (4th gen SiC) | CoolSiC M1H | ROHM SiC gen3 | ROHM SiC gen3 |
| RoHS Compliance | Compliant (exemption 7a), halide-free | Compliant | Compliant | Compliant | Compliant |
Wichtigste Unterscheidungsmerkmale
- Lowest conduction loss in its 650 V TO-247-3 comparison set (vs. IMZA65R045M1H)
- Proven M2 platform with wide secondary sourcing (vs. NTH4L040N065SC1)
- Higher current and power rating than ROHM equivalents (vs. SCT3060KLGC11)
- Trade-off: through-hole TO-247-3 has common-source inductance (vs. Kelvin-source TO-247-4 variants)
Designhinweise
Drive the NTHL045N065SC1 with approximately +15 V gate voltage for full enhancement of the 32 mOhm channel, and use 0 V or a small negative bias (-2 V to -4 V where the driver supports it) at turn-off. SiC MOSFETs switch fast enough that Miller-induced dv/dt turn-on can occur in half-bridge legs without negative bias or a Miller clamp. Use a dedicated SiC gate driver such as the onsemi NCP51705 or NCD57000 family and keep the gate resistor initially at the datasheet-recommended value before tuning switching speed versus EMI.
Minimize power-loop inductance to keep drain-source voltage ringing within the 650 V rating during hard turn-off. Place the DC-link decoupling capacitor directly across the bus bars feeding the bridge leg, keep the gate driver as close as practical to pin 1, and route the gate trace away from the drain node. In TO-247-3 the source lead carries both gate-return and load current (common-source inductance), which slows switching; a Kelvin-source variant would be preferable at very high frequencies, so budget slightly slower switching in your loss model.
Estimated: dissipating 12.8 W (20 A RMS conduction through 32 mOhm) with a junction-to-case thermal resistance near 0.4 C/W gives only ~5 C junction-to-case rise, but the TO-247-3 case-to-ambient resistance of 40-50 C/W in free air would exceed the TJ < 175C limit. A bolted heatsink with thermal interface material is mandatory above a few watts. Verify the exact RthJC from the onsemi datasheet and derate the 66 A / 291 W Tc ratings as case temperature rises above 25 C.
Do not exceed 650 V under any transient condition - ringing on the drain node during transformer leakage-inductance resets can overshoot well above the nominal bus. Add an RC snubber or clamp if measured overshoot approaches 600 V. Also avoid driving the gate above its absolute maximum rating; confirm the exact VGS limits in the onsemi datasheet before finalizing the driver, since SiC gate oxide ratings differ from silicon MOSFETs.
Compliance-Informationen
Per onsemi datasheet: 'This Device is Halide Free and RoHS Compliant with exemption 7a.' REACH and conflict-minerals status not stated in provided data.
